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1. 发明授权

US11901172B2 Method and device for the surface treatment of substrates 有权
公开(公告)号：US11901172B2
公开(公告)日：2024-02-13
申请号：US17090280
申请日：2020-11-05
申请人： EV Group E. Thallner GmbH
发明人： Nasser Razek
IPC分类号： H01L21/02 , C23C14/02 , H01L21/67 , C23C16/50 , H01J37/32
CPC分类号： H01L21/02046 , C23C14/022 , C23C16/50 , H01J37/32009 , H01L21/67028 , H01J2237/08 , H01J2237/3137 , H01J2237/3151
摘要： A method for the surface treatment of a substrate surface of a substrate includes arranging the substrate surface in a process chamber, bombarding the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, and introducing a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate includes a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, and means to introduce a second component into the process chamber to bind the removed impurities.

2. 发明公开

US20230162996A1 ETCHING APPARATUS 审中-公开
公开(公告)号：US20230162996A1
公开(公告)日：2023-05-25
申请号：US18100063
申请日：2023-01-23
申请人： Applied Materials, Inc.
发明人： Yang YANG , Kartik RAMASWAMY , Kenneth S. COLLINS , Steven LANE , Gonzalo MONROY , Lucy Zhiping CHEN , Yue GUO
IPC分类号： H01L21/67 , H01L21/311 , C23C16/02 , C23C16/517 , H01J37/32
CPC分类号： H01L21/67069 , H01L21/31116 , C23C16/0245 , C23C16/517 , H01J37/32091 , H01J37/32568 , H01J2237/3151 , H01J2237/3137
摘要： Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

3. 发明授权

US08864956B2 Multi-component deposition 有权
标题翻译：多组分沉积
公开(公告)号：US08864956B2
公开(公告)日：2014-10-21
申请号：US12582560
申请日：2009-10-20
申请人： Igor V. Belousov , Anatoly I. Kuzmichev , Vladimir Biber , Robert L. Memmen
发明人： Igor V. Belousov , Anatoly I. Kuzmichev , Vladimir Biber , Robert L. Memmen
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , C23C16/00 , C23C16/50 , H01J7/24 , H05B31/26 , C23C14/16 , C23C14/22 , B23P6/00 , C23C14/54 , H01J37/32 , F01D5/00 , H01J37/34
CPC分类号： C23C14/16 , B23P6/007 , C23C14/22 , C23C14/225 , C23C14/32 , C23C14/54 , C23C14/548 , F01D5/005 , F05D2230/313 , F05D2230/80 , H01J37/32935 , H01J37/34 , H01J2237/3137
摘要： Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition.
摘要翻译：离子增强的物理气相沉积通过溅射增加以沉积多组分材料。该方法可用于在Ti合金涡轮发动机部件上沉积涂层和修复材料。物理气相沉积可以是离子增强的电子束物理气相沉积。

4. 发明申请

US20080038933A1 Plasma and electron beam etching device and method 失效
标题翻译：等离子体和电子束蚀刻装置及方法
公开(公告)号：US20080038933A1
公开(公告)日：2008-02-14
申请号：US11503762
申请日：2006-08-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/31
CPC分类号： H01L21/31116 , C23C16/0245 , C23C16/042 , C23C16/26 , C23C16/517 , H01J37/28 , H01J37/3178 , H01J37/3233 , H01J2237/2605 , H01J2237/3137 , H01J2237/3151 , H01J2237/31732 , H01J2237/3174 , H01L27/1052 , Y10S438/905 , Y10S438/909
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

5. 发明申请

US20050067934A1 Discharge apparatus, plasma processing method and solar cell 审中-公开
标题翻译：放电装置，等离子体处理方法和太阳能电池
公开(公告)号：US20050067934A1
公开(公告)日：2005-03-31
申请号：US10670476
申请日：2003-09-26
申请人： Masashi Ueda , Tomoko Takagi , Norikazu Ito , Yoshimi Watabe
发明人： Masashi Ueda , Tomoko Takagi , Norikazu Ito , Yoshimi Watabe
IPC分类号： H01J17/26 , H01J37/32 , H01J61/28 , H01L31/20 , H05H1/24
CPC分类号： H01L31/202 , H01J37/32091 , H01J2237/3132 , H01J2237/3137 , H01J2237/3142 , H05H1/46 , H05H2001/463 , Y02E10/50 , Y02P70/521
摘要： The object of this invention is to realize the new configuration of antenna and the electric power feeding method which substantially suppress the generation of standing wave and consequently to provide a discharge apparatus to generate plasma having an excellent uniformity, a plasma processing method for large-area substrate, and a solar cell manufactured with a high productivity. The present invention is composed of a plurality of U-shaped antenna elements having a power feeding end and a grounded end which are arranged to form an array antenna in such a way that the grounded end and the power feeding end are alternately placed in parallel at regular intervals on a plane, wherein the alternating current electric powers with the same excitation frequency are simultaneously fed to the power feeding ends with the phase shift of 180 degrees between adjacent power feeding ends, the excitation frequency of the alternating current power is 10 MHz-2 GHz, and the length of the conductor is set so that the measured ratio of reflected wave to incident wave is 0.1 or less at the power feeding end. It is also possible to determine the length La of straight conductor to hold the inequality: 0.5(1/α)
摘要翻译：本发明的目的是实现基本上抑制驻波产生的天线的新配置和馈电方法，从而提供具有均匀性优异的等离子体的放电装置，大面积等离子体处理方法基板和以高生产率制造的太阳能电池。本发明由具有供电端和接地端的多个U形天线元件组成，这些U形天线元件被布置成形成阵列天线，使得接地端和馈电端交替地平行放置在其中具有相同激励频率的交流电功率在相邻供电端之间以180度的相移同时馈送到馈电端，交流功率的激励频率为10MHz- 2GHz，并且设定导体的长度，使得测得的反射波与入射波的比例在馈电端为0.1或更小。也可以确定直线导体的长度La以保持不等式：0.5（1 /α）

6. 发明申请

US20030143868A1 Method and apparatus for ionization film formation 失效
标题翻译：电离膜形成的方法和装置
公开(公告)号：US20030143868A1
公开(公告)日：2003-07-31
申请号：US10350019
申请日：2003-01-24
发明人： Hirohito Yamaguchi , Masahiro Kanai , Atsushi Koike , Katsunori Oya
IPC分类号： H01L021/31
CPC分类号： C23C14/046 , C23C14/32 , C23C14/355 , H01J2237/3137
摘要： A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
摘要翻译：提供了一种用于通过用热阴极系统的电离机构离子化蒸发的颗粒以将离子化的颗粒注入基底而形成沉积膜的电离膜的形成方法。该方法包括将He气引入电离机构的步骤。

7. 发明申请

US20120196051A1 Deposition Apparatus and Methods 审中-公开
标题翻译：沉积设备和方法
公开(公告)号：US20120196051A1
公开(公告)日：2012-08-02
申请号：US13016223
申请日：2011-01-28
申请人： Anatoly Kuzmichev , Igor V. Belousov , Yuriy G. Kononenko , John F. Mullooly
发明人： Anatoly Kuzmichev , Igor V. Belousov , Yuriy G. Kononenko , John F. Mullooly
IPC分类号： C23C16/513 , C23C16/50 , C23C14/30 , C23C16/48
CPC分类号： H01J37/3023 , C23C14/16 , C23C14/32 , H01J37/3053 , H01J2237/3137
摘要： A deposition apparatus includes a deposition chamber and a deposition material source. An electron beam source is positioned to direct a first electron beam to vaporize a portion of the deposition material. A first electrode is provided for generating a primary plasma from the deposition material source. A second electrode is provided for generating a secondary plasma and further accelerating ions from the primary plasma. A bias electric potential is applied to the workpiece to draw ions from the secondary plasma to the workpiece. A control system may be coupled to the electron beam source, the bias voltage source, and power supplies for the first and second electrodes.
摘要翻译：沉积设备包括沉积室和沉积材料源。电子束源被定位成引导第一电子束以蒸发沉积材料的一部分。提供第一电极用于从沉积材料源产生初级等离子体。提供第二电极用于产生次级等离子体并进一步加速来自初级等离子体的离子。将偏置电位施加到工件上以将离子从次级等离子体吸取到工件。控制系统可以耦合到电子束源，偏置电压源和用于第一和第二电极的电源。

8. 发明申请

US20090288603A1 PLASMA AND ELECTRON BEAM ETCHING DEVICE AND METHOD 审中-公开
标题翻译：等离子体和电子束蚀刻装置及方法
公开(公告)号：US20090288603A1
公开(公告)日：2009-11-26
申请号：US12534569
申请日：2009-08-03
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： C23C16/513
CPC分类号： H01L21/31116 , C23C16/0245 , C23C16/042 , C23C16/26 , C23C16/517 , H01J37/28 , H01J37/3178 , H01J37/3233 , H01J2237/2605 , H01J2237/3137 , H01J2237/3151 , H01J2237/31732 , H01J2237/3174 , H01L27/1052 , Y10S438/905 , Y10S438/909
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

9. 发明申请

US20070215047A1 Vacuum Device Where Power Supply Mechanism Is Mounted And Power Supply Method 有权
标题翻译：电源机构安装的真空装置及电源方式
公开(公告)号：US20070215047A1
公开(公告)日：2007-09-20
申请号：US11578056
申请日：2005-01-24
申请人： Masayuki Takimoto , Hiroyuki Komuro , Yutaka Fuse , Tatsumi Abe , Kazuhito Aonahata
发明人： Masayuki Takimoto , Hiroyuki Komuro , Yutaka Fuse , Tatsumi Abe , Kazuhito Aonahata
IPC分类号： C23C16/00 , H01R39/08
CPC分类号： C23C14/505 , C23C14/32 , H01J37/023 , H01J37/24 , H01J37/3053 , H01J2237/024 , H01J2237/3137 , H01R39/381 , H01R39/64
摘要： An improvement has been made in contact states between a rotating electrode arranged inside a vacuum chamber and a power supply mechanism which touches the rotating electrode to supply electric power thereto. A vacuum device is provided with a vacuum chamber, a rotating electrode arranged inside and electrically insulated from the vacuum chamber, and a power supply mechanism which touches the rotating electrode to supply electric power thereto, wherein the rotating electrode has an annular shape and horizontally rotates with respect to the center axis of the annular shape, and the power supply mechanism is composed of electrode members, and the electrode member and the rotating electrode come into contact with each other at least one contact surface.
摘要翻译：在布置在真空室内的旋转电极与接触旋转电极的电源机构之间的接触状态下进行了改进，以向其提供电力。真空装置设有真空室，设置在内部并与真空室电绝缘的旋转电极，以及与旋转电极接触以供应电力的电源机构，其中旋转电极具有环形并水平旋转相对于环状的中心轴线，供电机构由电极构成，电极构件和旋转电极彼此接触至少一个接触面。

10. 发明申请

US20050205415A1 Multi-component deposition 审中-公开
标题翻译：多组分沉积
公开(公告)号：US20050205415A1
公开(公告)日：2005-09-22
申请号：US10804754
申请日：2004-03-19
申请人： Igor Belousov , Anatoly Kuzmichev , Vladimir Biber , Robert Memmen
发明人： Igor Belousov , Anatoly Kuzmichev , Vladimir Biber , Robert Memmen
IPC分类号： F01D5/28 , C23C14/14 , C23C14/16 , C23C14/22 , C23C14/32 , C23C14/34 , C23C14/54 , F01D5/00 , F01D25/00 , F02C7/00 , F04D29/38
CPC分类号： C23C14/16 , B23P6/007 , C23C14/22 , C23C14/225 , C23C14/32 , C23C14/54 , C23C14/548 , F01D5/005 , F05D2230/313 , F05D2230/80 , H01J37/32935 , H01J37/34 , H01J2237/3137
摘要： Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition.
摘要翻译：离子增强的物理气相沉积通过溅射增加以沉积多组分材料。该方法可用于在Ti合金涡轮发动机部件上沉积涂层和修复材料。物理气相沉积可以是离子增强的电子束物理气相沉积。

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