专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07926000B2 Integrated circuit system employing dipole multiple exposure 有权
标题翻译：采用偶极多重曝光的集成电路系统
公开(公告)号：US07926000B2
公开(公告)日：2011-04-12
申请号：US11683691
申请日：2007-03-08
申请人： Sia Kim Tan , Qunying Lin
发明人： Sia Kim Tan , Qunying Lin
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： An integrated circuit system that includes: providing a first mask including a first feature; exposing the first mask to a radiation source to form an image of the first feature on a photoresist material that is larger than a structure to be formed, the photoresist material being formed over a substrate that includes the integrated circuit system; providing a second mask including a second feature; aligning the second mask over the image of the first mask to form an overlap region; and exposing the second mask to the radiation source to form an image of the second feature on the photoresist material that is larger than the structure to be formed.
摘要翻译：一种集成电路系统，包括：提供包括第一特征的第一掩模; 将所述第一掩模暴露于辐射源以在光致抗蚀剂材料上形成大于所形成的结构的所述第一特征的图像，所述光致抗蚀剂材料形成在包括所述集成电路系统的基板上; 提供包括第二特征的第二掩模; 将第二掩模对准第一掩模的图像以形成重叠区域; 以及将所述第二掩模暴露于所述辐射源以在所述光致抗蚀剂材料上形成大于所述待形成结构的第二特征的图像。

2. 发明申请

US20100197140A1 ANGLED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERNATING PHASE SHIFT MASK 有权
标题翻译： ANGED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERATE PHASE SHIFT MASK
公开(公告)号：US20100197140A1
公开(公告)日：2010-08-05
申请号：US12696067
申请日：2010-01-29
申请人： Gek Soon CHUA , Sia Kim TAN , Qunying LIN , Cho Jui TAY , Chenggen QUAN
发明人： Gek Soon CHUA , Sia Kim TAN , Qunying LIN , Cho Jui TAY , Chenggen QUAN
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F1/30
摘要： A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees with the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist.
摘要翻译：提出了一种形成半导体器件的方法。该方法包括提供其上具有光致抗蚀剂的基底，并通过具有图案的掩模将光源透射到光致抗蚀剂上。掩模包括具有第一，第二和第三区域的掩模基板，第三区域设置在第一和第二区域之间。掩模还包括在掩模基板上方的减光层，在第一区域上具有第一开口，在第二区域上具有第二开口。第一和第二开口具有层侧壁。减光层的侧壁与掩模基板的顶表面的平面以小于90度的角度倾斜。该方法还包括显影光致抗蚀剂以将掩模的图案转移到光致抗蚀剂。

3. 发明申请

US20090286167A1 CROSS TECHNOLOGY RETICLES 有权
标题翻译：交叉技术假说
公开(公告)号：US20090286167A1
公开(公告)日：2009-11-19
申请号：US12369720
申请日：2009-02-11
申请人： Sia Kim Tan , Guoxiang Ning , Gek Soon Chua , Soon Yoeng Tan , Byoung Il Choi , Jason Phua
发明人： Sia Kim Tan , Guoxiang Ning , Gek Soon Chua , Soon Yoeng Tan , Byoung Il Choi , Jason Phua
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/50
摘要： A method of fabricating a device is presented. The method includes forming a mask that includes multiple images. A substrate is patterned using the mask. An image of the multiple images corresponds to a respective patterning process. The substrate is processed further to complete the processing of the substrate to form the desired function of the device.
摘要翻译：提出了一种制造器件的方法。该方法包括形成包括多个图像的掩模。使用掩模对衬底进行图案化。多幅图像的图像对应于各自的图案化处理。进一步处理衬底以完成衬底的处理以形成器件的期望功能。

4. 发明授权

US07445874B2 Method to resolve line end distortion for alternating phase shift mask 有权
标题翻译：解决交变相移掩模线路失真的方法
公开(公告)号：US07445874B2
公开(公告)日：2008-11-04
申请号：US10985263
申请日：2004-11-10
申请人： Sia Kim Tan , Qunying Lin , Liang-Choo Hsia
发明人： Sia Kim Tan , Qunying Lin , Liang-Choo Hsia
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F1/30
摘要： A embodiment method for forming a layout for a phase shift mask. A embodiment comprises providing a layout comprising a first feature, a first shifter region and a second shifter region. The first feature preferably has a L-shape portion with an elbow region. The first shifter region is on the outside of the L-shaped portion and the second shifter region is on the inside of the L-shaped portion. The elbow region has an outside corner away from the second shifter region. We identify a phase conflict region caused by the L-shaped portion of the first feature, the first shifter region and the second shifter region. We resolve the phase conflict by modifying the elbow region by moving the outside corner of the elbow region away from the first shifter region and the phase conflict region. The modification of the elbow region further comprises forming a jog region in the line end section of the first feature.
摘要翻译：一种用于形成相移掩模布局的实施例方法。实施例包括提供包括第一特征，第一移位区和第二移位区的布局。第一特征优选具有肘部区域的L形部分。第一移位区域位于L形部分的外侧，第二移位区域位于L形部分的内侧。肘部区域具有远离第二移位区域的外角。我们识别由第一特征的L形部分，第一移位区域和第二移位区域引起的相位冲突区域。我们通过移动肘部区域的外角远离第一移位区域和相位冲突区域来修改肘部区域来解决相位冲突。肘部区域的修改还包括在第一特征的线端部中形成点动区域。

5. 发明授权

US07014962B2 Half tone alternating phase shift masks 失效
标题翻译：半色调交替相移掩模
公开(公告)号：US07014962B2
公开(公告)日：2006-03-21
申请号：US10661048
申请日：2003-09-13
申请人： Qun Ying Lin , Sia Kim Tan , Soon Yoeng Tan , Huey Ming Chong
发明人： Qun Ying Lin , Sia Kim Tan , Soon Yoeng Tan , Huey Ming Chong
IPC分类号： G01F9/00 , G03C5/00
CPC分类号： G03F1/32
摘要： A structure, a method of fabricating and a method of using a phase shift mask (PSM) having a first phase shifted section, a half tone section, and a second phase shifted section. The first phase shift section and the half tone section are shifted 180 degrees with the second phase shift region. Embodiments provide for (1) a half tone, single trench alternating phase shift mask and (2) a half tone, dual trench alternating phase shift mask. The half tone region provides advantages over conventional alternating phase shift masks.
摘要翻译：一种结构，制造方法和使用具有第一相移部分，半色调部分和第二相移部分的相移掩模（PSM）的方法。第一相移部分和半色调部分与第二相移区域移动180度。实施例提供（1）半色调单沟槽交替相移掩模和（2）半色调双沟道交替相移掩模。半色调区域提供优于常规交替相移掩模的优点。

6. 发明申请

US20100293516A1 MASK SYSTEM EMPLOYING SUBSTANTIALLY CIRCULAR OPTICAL PROXIMITY CORRECTION TARGET AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：采用实质性光学临近修正目标的掩模系统及其制造方法
公开(公告)号：US20100293516A1
公开(公告)日：2010-11-18
申请号：US12465431
申请日：2009-05-13
申请人： Sia Kim Tan , Gek Soon Chua , Kwee Liang Martin Yeo , Ryan Khoon Khye Chong , Moh Lung Ling
发明人： Sia Kim Tan , Gek Soon Chua , Kwee Liang Martin Yeo , Ryan Khoon Khye Chong , Moh Lung Ling
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method of manufacture of a mask system includes: providing design data; generating a substantially circular optical proximity correction target from the design data; biasing a segment of the substantially circular optical proximity correction target; and generating mask data based on the shape produced by biasing the segment of the substantially circular optical proximity correction target.
摘要翻译：掩模系统的制造方法包括：提供设计数据; 从设计数据生成基本圆形的光学邻近校正目标; 偏置基本圆形的光学邻近校正目标的一段; 以及基于通过偏置基本圆形的光学邻近校正目标的段而产生的形状来产生掩模数据。

7. 发明授权

US07674562B2 Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask 有权
标题翻译：角度楔形铬面墙用于交变相移掩模的强度平衡
公开(公告)号：US07674562B2
公开(公告)日：2010-03-09
申请号：US11297532
申请日：2005-12-07
申请人： Gek Soon Chua , Sia Kim Tan , Qunying Lin , Cho Jui Tay , Chenggen Quan
发明人： Gek Soon Chua , Sia Kim Tan , Qunying Lin , Cho Jui Tay , Chenggen Quan
IPC分类号： G03F1/08 , G03F1/14
CPC分类号： G03F1/30
摘要： A method for forming a phase shift mask is presented. The method includes providing a substrate including a transparent material having first, second and third regions, the third region being disposed between the first and second regions. The method also includes forming a light reducing layer on a first major surface of the substrate. The light reducing layer is patterned to form a patterned light reducing layer having sidewalls defining openings to expose the first and second regions. The patterned light reducing layer is processed to transform the sidewalls of the patterned light reducing layer to angled sidewalls having an angle of less than 90° from a plane of the first major surface of the substrate. The angled sidewalls improve intensity balance of an image-formed by light-transmitted through the mask.
摘要翻译：提出了一种形成相移掩模的方法。该方法包括提供包括具有第一，第二和第三区域的透明材料的基板，该第三区域设置在第一和第二区域之间。该方法还包括在基板的第一主表面上形成减光层。图案化减光层以形成具有限定开口以暴露第一和第二区域的侧壁的图案化减光层。处理图案化的光降低层以将图案化的减光层的侧壁转变成与基板的第一主表面的平面成小于90°的角度的成角度的侧壁。成角度的侧壁提高了透过掩模的光图像形成的强度平衡。

8. 发明授权

US07655388B2 Mask and method to pattern chromeless phase lithography contact hole 有权
标题翻译：掩模和方法来绘制无铬相光刻接触孔
公开(公告)号：US07655388B2
公开(公告)日：2010-02-02
申请号：US11028421
申请日：2005-01-03
申请人： Sia Kim Tan , Soon Yoeng Tan , Qun Ying Lin , Hury Ming Chong , Liang Choo Hsia
发明人： Sia Kim Tan , Soon Yoeng Tan , Qun Ying Lin , Hury Ming Chong , Liang Choo Hsia
IPC分类号： G03F9/00
CPC分类号： G03F1/34
摘要： A chromeless phase shift mask and Method for making and using. The A chromeless phase shift mask is used to pattern contact holes. The chromeless phase shift mask preferably comprises: a first phase shift region and a second phase shift region; the first region is comprised of a unit cell which is comprised of a rectangular center section and at least three rectangular sections (legs) outwards extending from the rectangular center section. The second region is adjacent to said first region. The interference between the first and second phase shift regions creates a contact hole pattern.
摘要翻译：无色相移掩模和制造和使用方法。 A无铬相移掩模用于对接触孔进行图案化。无铬相移掩模优选地包括：第一相移区域和第二相移区域; 第一区域包括由矩形中心部分和从矩形中心部分向外延伸的至少三个矩形部分（腿）的单元电池。第二区域与所述第一区域相邻。第一和第二相移区域之间的干涉产生接触孔图案。

9. 发明授权

US07649612B2 Phase shifting photolithography system 有权
标题翻译：相移光刻系统
公开(公告)号：US07649612B2
公开(公告)日：2010-01-19
申请号：US11307245
申请日：2006-01-27
申请人： Qunying Lin , Sia Kim Tan , Liang-Choo Hsia
发明人： Qunying Lin , Sia Kim Tan , Liang-Choo Hsia
IPC分类号： G03B27/54 , G03B27/72
CPC分类号： G03F7/70191 , G03F7/70091
摘要： A phase shifting photolithography system includes inserting a phase shift component in a path of an illumination, wherein the phase shift component modifies a portion of the illumination to a different, and controlling an aperture shutter of the phase shift component modifying an interference of the illumination and the illumination with the different phase.
摘要翻译：相移光刻系统包括在照明路径中插入相移分量，其中相移分量将照明的一部分修改为不同的，并且控制相移分量的孔径光阑来修改照明的干扰和具有不同相位的照明。

10. 发明申请

US20090181551A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING MULTIPLE EXPOSURE DUMMY PATTERNING TECHNOLOGY 有权
标题翻译：集成电路系统采用多种曝光方式绘图技术
公开(公告)号：US20090181551A1
公开(公告)日：2009-07-16
申请号：US11972809
申请日：2008-01-11
申请人： Sia Kim Tan , Soo Muay Goh , Qunying Lin , Martin Yeo
发明人： Sia Kim Tan , Soo Muay Goh , Qunying Lin , Martin Yeo
IPC分类号： H01L21/30
CPC分类号： H01L21/31144 , G03F1/36 , G03F7/70466 , H01L21/76816 , H01L23/522 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit system that includes: providing a substrate coated with a photoresist material; exposing the photoresist material to an energy source through a first mask to form a first substrate feature and a second substrate feature therein; and exposing the photoresist material to the energy source through a second mask to transform the second substrate feature into another one of the first substrate feature therein.
摘要翻译：一种集成电路系统，包括：提供涂覆有光致抗蚀剂材料的基底; 通过第一掩模将光致抗蚀剂材料暴露于能量源以在其中形成第一衬底特征和第二衬底特征; 以及通过第二掩模将所述光致抗蚀剂材料暴露于所述能量源，以将所述第二衬底特征变换为所述第一衬底特征中的另一衬底特征。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式