会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Halftone phase shift mask and mask blank
    • 半色调相移掩模和掩模空白
    • US06743553B2
    • 2004-06-01
    • US10025569
    • 2001-12-26
    • Yuki ShiotaOsamu Nozawa
    • Yuki ShiotaOsamu Nozawa
    • G03F900
    • G03F1/32
    • In a phase shift mask blank, a desired transmittance and phase shift amount are given in the vicinity of 157 nm as a wavelength of an F2 excimer laser. The phase shift mask blank has a phase shifter film satisfactory in a resistance to exposure light irradiation, resistance to chemicals, processability, moldability, and shape stability. The halftone phase shift mask blank having the phase shifter on a transparent substrate is used in an exposure light wavelength rage of 140 nm to 200 nm, the phase shifter film is formed of a film containing main constituting elements of silicon, oxygen, and nitrogen, and contains 35 and 45% of silicon, 1 to 60% of oxygen, and 5 to 60% of nitrogen in atomic percentage, and a total amount of the elements occupies at least 90% or more of a whole composition constituting the phase shifter portion.
    • 在相移掩模空白中,作为F2准分子激光器的波长,在157nm附近给出期望的透射率和相移量。 相移掩模空白具有耐曝光光照射,耐化学品,加工性,成型性和形状稳定性令人满意的移相膜。 在140nm至200nm的曝光光波长范围内使用在透明基板上具有移相器的半色调相移掩模空白,移相膜由含有硅,氧和氮的主要构成元素的膜形成, 并且含有35%和45%的硅,1至60%的氧和5至60%的原子百分比的氮,并且元素的总量占构成移相器部分的整个组合物的至少90%以上 。