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1. 发明授权

US10012870B2 Alignment device and manufacturing method of alignment film and display substrate 有权
公开(公告)号：US10012870B2
公开(公告)日：2018-07-03
申请号：US15222228
申请日：2016-07-28
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Hongpeng Li
IPC分类号： G02F1/1337 , G03B27/32 , G03B27/54 , G03B27/72 , G02F1/1339 , G02F1/161 , B05D3/02 , B05D3/06 , B05D3/12 , G02F1/13 , G03F7/20
CPC分类号： G02F1/133788 , B05D3/0254 , B05D3/065 , B05D3/12 , G02F1/1303 , G02F1/133784 , G02F1/1339 , G02F1/161 , G03F7/7035
摘要： This disclosure discloses an alignment device and a method of manufacturing an alignment film, and a display substrate. The alignment device comprises a first exposure chamber that contains a first light box and a light-shielding plate for blocking light emitted from the first light box from irradiating the alignment region of the alignment film. The light emitted from the first light box is used to irradiate a non-alignment region so as to eliminate the alignment film in the non-alignment region.

2. 发明授权

US09971249B1 Method and system for controlled ultraviolet light exposure 有权
公开(公告)号：US09971249B1
公开(公告)日：2018-05-15
申请号：US15443196
申请日：2017-02-27
申请人： Canon Kabushiki Kaisha
发明人： Seth J. Bamesberger , Yeshwanth Srinivasan
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/7045 , G03F7/00 , G03F7/0002 , G03F7/2047 , G03F7/70033 , G03F7/7035
摘要： Methods, systems, and apparatus for identifying a non-rectangular shape outline of a first field of a substrate, the first field directly adjacent to a second field; adjusting an exposure profile of an ultraviolet light beam based on the non-rectangular shape outline of the first field to provide a non-rectangular exposure profile of the ultraviolet light beam; disposing a polymerizable composition on the first field of the substrate; contacting the polymerizable composition in the first field with an imprint lithography template; and while contacting the polymerizable composition in the first field with the imprint lithography template, directing the ultraviolet light beam having the non-rectangular exposure profile towards the substrate such that the ultraviolet light beam irradiates only the first field of the substrate.

3. 发明授权

US09939727B2 Method for manufacturing patterned object, patterned object, and light irradiation apparatus 有权
公开(公告)号：US09939727B2
公开(公告)日：2018-04-10
申请号：US15306967
申请日：2015-10-06
申请人： USHIO DENKI KABUSHIKI KAISHA
发明人： Go Yamada
IPC分类号： G03F7/20 , H01L21/027 , G03F7/16 , C07F9/38 , C07C323/03 , G03F7/00 , H01L51/05
CPC分类号： G03F7/2002 , C07C323/03 , C07F9/3808 , G03F7/002 , G03F7/165 , G03F7/2039 , G03F7/7035 , G03F7/70575 , H01L21/0274 , H01L51/052
摘要： Disclosed herein is a method for manufacturing a patterned object and a light irradiation apparatus that make it possible to form a pattern that accurately follows a mask pattern with higher accuracy in a patterning process of irradiating a pattern forming substrate with vacuum ultra violet light. The light irradiation apparatus includes a mask stage arranged apart from the pattern forming substrate and configured to hold a mask on which a prescribed pattern is formed, and a vacuum ultra violet light source unit configured to irradiate the pattern forming substrate with vacuum ultra violet light through the mask. A space between the mask and the pattern forming substrate is set to be an atmosphere containing oxygen. The vacuum ultra violet light source unit irradiates light, as the vacuum ultra violet light, having a continuous spectrum in a range where a wavelength ranges from 180 nm to 200 nm.

4. 发明申请

US20170131630A1 PATTERN FORMING METHOD 有权
公开(公告)号：US20170131630A1
公开(公告)日：2017-05-11
申请号：US15412121
申请日：2017-01-23
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Naomi SHIDA , Kenji TODORI , Shigehiko MORI , Reiko YOSHIMURA , Hiroyuki KASHIWAGI , lkuo YONEDA , Tsukasa TADA
IPC分类号： G03F1/76 , G03F7/40 , G03F7/16 , G03F7/20 , H01L21/308 , H01L21/3065
CPC分类号： G03F1/76 , G03F1/38 , G03F1/80 , G03F7/16 , G03F7/20 , G03F7/201 , G03F7/40 , G03F7/7035 , H01L21/3065 , H01L21/3086
摘要： A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

5. 发明授权

US09575417B2 Exposure apparatus including a mask holding device which holds a periphery area of a pattern area of the mask from above 有权
标题翻译：曝光装置，包括从上方保持面罩的图案区域的周边区域的面罩保持装置
公开(公告)号：US09575417B2
公开(公告)日：2017-02-21
申请号：US14245050
申请日：2014-04-04
申请人： NIKON CORPORATION
发明人： Yuichi Shibazaki
IPC分类号： A61N5/00 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70708 , G03F7/7035 , G03F7/70358 , G03F7/70733 , G03F7/70783 , H01L21/0273
摘要： An exposure apparatus which transfers a pattern formed on a mask onto a photosensitive substrate placed in proximity to the mask, the apparatus including an illumination optical device which illuminates the mask with an energy beam, a mask holding device which holds a periphery area of a pattern area of the mask from above, and makes a force at least within a plane parallel to a predetermined plane act on the mask and a substrate holding device which moves along the predetermined plane holding the substrate.
摘要翻译：将形成在掩模上的图案转印到位于掩模附近的感光基片上的曝光装置，该装置包括用能量束照射掩模的照明光学装置，保持图案的周边区域的掩模保持装置并且至少在平行于预定平面的平面内作用在掩模上的力和沿着保持基板的预定平面移动的基板保持装置。

6. 发明授权

US09454086B2 Programmable photolithography 有权
标题翻译：可编程光刻
公开(公告)号：US09454086B2
公开(公告)日：2016-09-27
申请号：US14351465
申请日：2012-10-15
申请人： University of Utah Research Foundation
发明人： Rajesh Menon
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/70291 , G03F7/2051 , G03F7/70 , G03F7/7035 , H01L21/027
摘要： A method of programmable photolithography includes positioning (910) a programmable photomask in proximity to a photoresist layer on a sample. The programmable photomask is illuminated (920) with a plurality of different wavelengths of light simultaneously to expose the photoresist layer in a predetermined pattern. The programmable photomask is separated (930) from the photoresist layer and the photoresist layer is developed (940) to create the predetermined pattern in the photoresist layer.
摘要翻译：可编程光刻的方法包括将可编程光掩模定位（910）在样品附近的光致抗蚀剂层附近。可编程光掩模被同时照射多个不同波长的光（920），以以预定图案曝光光致抗蚀剂层。可编程光掩模与光致抗蚀剂层分离（930），并且光致抗蚀剂层被显影（940）以在光致抗蚀剂层中产生预定图案。

7. 发明授权

US09417536B2 Exposure apparatus and exposure system 有权
标题翻译：曝光装置和曝光系统
公开(公告)号：US09417536B2
公开(公告)日：2016-08-16
申请号：US14339608
申请日：2014-07-24
申请人： BOE Technology Group Co., Ltd. , Beijing BOE Display Technology Co., Ltd.
发明人： Changjun Zha , Min Li , Hongjiang Wu
IPC分类号： G03B27/58 , G03F7/20
CPC分类号： G03F7/7035 , G03F7/707 , G03F7/70783 , G03F7/70791
摘要： An exposure apparatus is provided. It comprises: a substrate stage on which a holding region is provided to hold a substrate to be exposed, the holding region being provided with a support portion thereon for supporting the substrate to be exposed; a supporter configured to support a mask; a light source system configured to provide an exposure light which is illuminated on the substrate to be exposed via the mask to reproduce a pattern of the mask onto the substrate, wherein the support portion has a height which decreases gradually from an outer periphery of the holding region to a center of the holding region, such that an exposure distance is constant at all of positions on the holding region. With the above structure, the graph dimension may be kept uniform on the substrate even if the mask becomes bent.
摘要翻译：提供曝光装置。它包括：衬底台，其上设有保持区以保持要暴露的衬底，所述保持区在其上设置有用于支撑要暴露的衬底的支撑部; 配置为支持掩模的支撑件; 光源系统，被配置为提供照射在待通过掩模曝光的基板上的曝光光，以将掩模的图案再现到基板上，其中支撑部分具有从保持件的外周逐渐减小的高度区域到保持区域的中心，使得曝光距离在保持区域上的所有位置都是恒定的。利用上述结构，即使掩模弯曲，也可以在基板上保持图形尺寸均匀。

8. 发明授权

US09216590B2 Extreme ultraviolet/soft X-ray laser nano-scale patterning using the demagnified Talbot effect 有权
标题翻译：极端的紫外/软X射线激光纳米尺度图案化使用缩小的Talbot效应
公开(公告)号：US09216590B2
公开(公告)日：2015-12-22
申请号：US14637004
申请日：2015-03-03
申请人： COLORADO STATE UNIVERSITY RESEARCH FOUNDATION , SYNOPSYS, INC.
发明人： Mario C. Marconi , Lukasz Urbanski , Jorge J. Rocca , Artak Isoyan
IPC分类号： G03F7/20 , B41J2/465
CPC分类号： B41J2/465 , G03F7/2047 , G03F7/2053 , G03F7/7035 , G03F7/70408
摘要： An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.
摘要翻译：一种用于使用缩小的Talbot效应对基底进行纳米图案化的装置和方法，其中：（a）可以快速地印刷大量纳米结构阵列; （b）短的极紫外波长允许亚100nm的空间分辨率; （c）可以连续地调整去放大系数，即连续缩放; （d）图形化是构成周期性阵列的多个平铺单元的集体衍射的影响，产生误差电阻，使得一个单元中的缺陷在掩模的区域上被平均，并且打印不显示任何缺陷 ; （e）Talbot面膜不会磨损，因为该方法是非接触的; 并且（f）掩模上的特征尺寸不必像目标上所需的特征尺寸一样小。该装置包括具有指向聚焦光学元件的所选波长的相干辐射源，反射的会聚光穿过Talbot掩模并撞击目标基底。

9. 发明申请

US20150309417A1 EXPOSURE APPARATUS 审中-公开
标题翻译：曝光装置
公开(公告)号：US20150309417A1
公开(公告)日：2015-10-29
申请号：US14647389
申请日：2014-08-01
申请人： LG CHEM, LTD.
发明人： Jeong Ho PARK , Bu Gon SHIN , Jae Jin KIM , Jong Byung LEE
IPC分类号： G03F7/20
CPC分类号： G03F7/70058 , G03F1/00 , G03F1/34 , G03F1/50 , G03F1/60 , G03F7/20 , G03F7/24 , G03F7/703 , G03F7/7035
摘要： Provided are a photomask, an exposure apparatus and a method. A fine pattern having a submicrometer size can be easily formed on a cylindrical mold, and the cylindrical mold having the pattern formed therein can be easily applied to an automation process, such as a roll-to-roll process. Also, the fine pattern can be formed in a large scale having various sizes by using a mask formed of a flexible material, and patterns having different shapes can be divided or independently formed on a curved surface of the cylindrical mold so that a degree of freedom of a process can be improved.
摘要翻译：提供光掩模，曝光装置和方法。具有亚微米尺寸的精细图案可以容易地形成在圆柱形模具上，并且其中形成有图案的圆柱形模具可以容易地应用于诸如卷对卷过程的自动化过程。此外，通过使用由柔性材料形成的掩模，可以以各种尺寸形成精细图案，并且可以在圆柱形模具的曲面上分割或独立地形成具有不同形状的图案，使得自由度的过程可以改进。

10. 发明申请

US20150293455A1 EXPOSURE APPARATUS AND EXPOSURE METHOD 有权
标题翻译：曝光装置和曝光方法
公开(公告)号：US20150293455A1
公开(公告)日：2015-10-15
申请号：US14351083
申请日：2013-11-12
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Can Wang , Jianwei Yu
IPC分类号： G03F7/20
CPC分类号： G03F7/7015 , G03F7/2008 , G03F7/70075 , G03F7/7035
摘要： An exposure apparatus comprises a light source (1) and a diffusing sheet (2) provided below the light source (1), a side of the diffusing sheet (2) adjacent to the light source (1) is an incident face (21) and the other side opposite to the incident face (21) is an emitting face (22); the light emitted from the light source (1) enters the diffusing sheet (2) through the incident face (21), is refracted within the diffusing sheet (2), and after being diffused, emits out evenly throughout the emitting face (22). The exposure apparatus enables an evenly exposure of the photoresist on the substrate. An exposure method using such an exposure apparatus is also disclosed.
摘要翻译：曝光装置包括设置在光源（1）下方的光源（1）和漫射片（2），与光源（1）相邻的漫射片（2）的一侧是入射面（21）并且与所述入射面（21）相反的另一侧为发射面（22）。从光源（1）发射的光通过入射面（21）进入漫射片（2），在扩散片（2）内折射，并且在漫射片之后，在整个发射面（22）均匀地发射，。曝光装置使得能够均匀地曝光基板上的光致抗蚀剂。还公开了使用这种曝光装置的曝光方法。

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