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1. 发明授权

US10062622B2 Electrolytic seal 有权
公开(公告)号：US10062622B2
公开(公告)日：2018-08-28
申请号：US15440032
申请日：2017-02-23
申请人： International Business Machines Corporation
发明人： Bing Dang , Yu Luo
IPC分类号： H01L23/02 , H01L23/10 , H01L31/0203 , H01L21/48 , B81B7/00 , B81C1/00
CPC分类号： H01L23/10 , B81B7/0058 , B81C1/00269 , B81C2203/038 , H01L21/4817 , H01L21/50 , H01L31/0203
摘要： A semiconductor device includes a first bonding surface disposed on a first component of the semiconductor device. A bond material is disposed on the first bonding surface, and a second bonding surface is disposed on a second component of the semiconductor device. The bond material is disposed on the second bonding surface. A first electroplated bond connects the bond material and the first bonding surface, and a second electroplated bond connects the bond material and the second bonding surface.

2. 发明授权

US09891006B2 Metal-based microchannel heat exchangers made by molding replication and assembly 有权
公开(公告)号：US09891006B2
公开(公告)日：2018-02-13
申请号：US15010162
申请日：2016-01-29
申请人： Wen Jin Meng , Fanghua Mei
发明人： Wen Jin Meng , Fanghua Mei
IPC分类号： F28F13/18 , F28F1/00 , B81C99/00 , F28F3/12 , F28F21/08 , H01L21/48 , H01L23/473 , H01L23/367
CPC分类号： F28F1/00 , B81B2201/058 , B81C99/0085 , B81C2203/038 , F28F3/12 , F28F21/08 , F28F2260/02 , H01L21/4882 , H01L23/3675 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Compression molding of metals is used to make microchannel heat exchangers. Heat transfer can be improved by employing controlled microchannel surface roughness. Flux-free bonding is achieved using a eutectic thin-film intermediate layer. Seals are leak-tight, mechanically strong, and uniform across multiple contact areas. The metal heat exchangers may be mass-produced inexpensively, and are useful for applications including the cooling of computer chips and other high-power electronic devices, air conditioning, refrigeration, condenser plates, radiators, fuel cell heat management, and instant water heating.

3. 发明申请

US20170210621A1 MICROMECHANICAL COMPONENT AND METHOD FOR PRODUCING SAME 审中-公开
公开(公告)号：US20170210621A1
公开(公告)日：2017-07-27
申请号：US15500430
申请日：2015-07-14
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V
发明人： Felix Schiebel , Christoph Eberl , Matthew Berwind , Peter Gumbsch
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00373 , B29C64/135 , B33Y10/00 , B33Y80/00 , B81B7/0074 , B81B2201/038 , B81B2201/047 , B81B2203/0315 , B81B2203/0392 , B81C3/001 , B81C99/0095 , B81C2201/0188 , B81C2203/038
摘要： A method for producing micromechanical components is provided. A liquid starting material which can be cured by means of irradiation is applied onto a substrate. A partial volume of the starting material is cured by means of a local irradiation process using a first radiation source in order to produce at least one three-dimensional structure. The three-dimensional structure delimits at least one closed cavity in which at least one part of the liquid starting material is enclosed. Alternatively or in addition, a micromechanical component is provided that contains a liquid starting material, which is partly cured by means of irradiation, and at least one cavity in which the liquid starting material is enclosed.

4. 发明授权

US09533880B2 Method of fabrication of Al/Ge bonding in a wafer packaging environment and a product produced therefrom 有权
标题翻译：在晶片封装环境中制造Al / Ge键合的方法和由其制造的产品
公开(公告)号：US09533880B2
公开(公告)日：2017-01-03
申请号：US14853873
申请日：2015-09-14
申请人： InvenSense, Inc.
发明人： Steven S. Nasiri , Anthony F. Flannery, Jr.
IPC分类号： H01L21/00 , H01L21/44 , H01L21/48 , H01L21/50 , B81C1/00 , H01L21/18 , B81B3/00 , B81C3/00 , B23K20/02
CPC分类号： B81C1/00238 , B23K20/023 , B81B3/0018 , B81B7/007 , B81B2203/0315 , B81B2207/012 , B81B2207/094 , B81C1/00269 , B81C3/001 , B81C2203/0118 , B81C2203/035 , B81C2203/038 , B81C2203/0792 , H01L21/187
摘要： A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
摘要翻译：公开了一种在两个基板之间将锗键合到铝以产生牢固的电气和机械接触的方法。铝 - 锗键具有以下独特的属性组合：（1）可形成气密封; （2）可用于在两个基板之间形成导电路径; （3）可以对其进行图案化，使得该导电路径被定位; （4）可以用作为标准铸造CMOS工艺的铝制成。这具有允许晶片级接合或封装而不向CMOS晶片添加任何附加工艺层的显着优点。

5. 发明申请

US20160311676A1 BONDED WAFER STRUCTURE HAVING CAVITIES WITH LOW PRESSURE AND METHOD FOR FORMING 有权
标题翻译：具有低压的夹层的结合的结构和形成方法
公开(公告)号：US20160311676A1
公开(公告)日：2016-10-27
申请号：US14697081
申请日：2015-04-27
申请人： FREESCALE SEMICONDUCTOR, INC.
发明人： Robert F. STEIMLE , Aaron A. GEISBERGER , Jeffrey D. HANNA , Ruben B. MONTEZ
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0072 , B81B2203/0118 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , B81C2203/038 , B81C2203/054
摘要： A multi-wafer structure is formed by forming a cavity in a cap wafer and forming a first seal material around the cavity. A collapsible standoff structure is formed around the cavity. A movable mass is formed in a device wafer. A second seal material is formed around the movable mass. The first seal material and the second seal material are of materials that are able to form a eutectic bond at a eutectic temperature. The cap wafer and the device wafer are arranged so that the first and second seals are aligned but separated by the collapsible standoff structure. Gas is evacuated from the cavity at a temperature above the eutectic temperature using a low pressure. The temperature is lowered, the cap and device wafer are pressed together, and the temperature is raised above the eutectic temperature to form a eutectic bond with the first and second seal materials.
摘要翻译：通过在盖晶片中形成空腔并在空腔周围形成第一密封材料形成多晶片结构。在腔体周围形成可折叠的间隔结构。在装置晶片中形成可移动质量块。第二密封材料形成在可移动块周围。第一密封材料和第二密封材料是能够在共晶温度下形成共晶键的材料。盖晶片和器件晶片被布置成使得第一和第二密封件对齐，但是由可折叠的支架结构分开。使用低压将气体在高于共晶温度的温度下从空腔中排出。降低温度，将盖和器件晶片压在一起，并将温度升高到高于共晶温度以形成与第一和第二密封材料的共晶接合。

6. 发明申请

US20160154019A1 MEMS GYROSCOPE 审中-公开
标题翻译： MEMS陀螺仪
公开(公告)号：US20160154019A1
公开(公告)日：2016-06-02
申请号：US14518621
申请日：2014-10-20
申请人： InSighTech, LLC
发明人： Biao Zhang , Tao Ju
IPC分类号： G01P15/105 , G01R33/09
CPC分类号： G01P15/105 , B81B5/00 , B81C1/00357 , B81C3/001 , B81C2201/0197 , B81C2203/038 , G01C19/56 , G01C19/5712 , G01C19/5776 , G01P15/125 , G01R33/091 , G01R33/093 , G01R33/098
摘要： A MEMS gyroscope is disclosed herein, wherein the MEMS gyroscope comprises a movable portion capable of moving in response to angular velocity, a conducting wire attached to the movable portion for generating magnetic field, and a spintronic device for measuring the magnetic field. The conducting wire is disposed such that the current it carries is substantially perpendicular to the sensing direction of the sensing mode of the proof-mass.
摘要翻译：本文公开了一种MEMS陀螺仪，其中MEMS陀螺仪包括能够响应于角速度移动的可移动部分，连接到用于产生磁场的可移动部分的导线和用于测量磁场的自旋电子装置。导线被布置成使得其承载的电流基本上垂直于检验质量的感测模式的感测方向。

7. 发明授权

US09079359B2 Microchip and method of manufacturing the same 有权
标题翻译： Microchip及其制造方法
公开(公告)号：US09079359B2
公开(公告)日：2015-07-14
申请号：US13451722
申请日：2012-04-20
申请人： Shun Momose , Hiroki Takeuchi
发明人： Shun Momose , Hiroki Takeuchi
IPC分类号： G01N27/403 , B29C65/00 , B29C65/14 , B29C65/16 , B81C3/00 , B01L3/00 , B29C65/82 , B29L31/00
CPC分类号： B29C66/112 , B01L3/502707 , B01L2200/0689 , B01L2300/0816 , B01L2300/0887 , B29C65/1435 , B29C65/1477 , B29C65/1493 , B29C65/1635 , B29C65/1677 , B29C65/1693 , B29C65/8253 , B29C66/1122 , B29C66/114 , B29C66/242 , B29C66/244 , B29C66/30221 , B29C66/30223 , B29C66/348 , B29C66/53461 , B29C66/71 , B29C66/73161 , B29C66/73343 , B29C66/73365 , B29C66/73921 , B29C66/81267 , B29C66/8322 , B29L2031/756 , B81B2201/0214 , B81C3/001 , B81C2201/019 , B81C2203/038 , Y10T137/8593 , B29K2025/06 , B29K2009/06 , B29K2023/06 , B29K2023/12 , B29K2023/38 , B29K2033/12 , B29K2055/02 , B29K2059/00 , B29K2067/00 , B29K2067/003 , B29K2067/006 , B29K2069/00 , B29K2077/00 , B29K2083/00
摘要： Provided are a microchip including a fluid circuit consisting of a space formed therein, a light-absorbing first substrate and a light-transmitting second substrate bonded onto the first substrate, and a groove, having a V-shaped section, extending parallelly to the fluid circuit on a surface of the second substrate opposite to the first substrate on a position immediately above at least part of the fluid circuit and a method of manufacturing the same.
摘要翻译：提供了一种微芯片，其包括由其中形成的空间组成的流体回路，光吸收第一基板和接合到第一基板上的透光第二基板，以及具有平行于流体的V形截面的凹槽在第二基板的与第一基板相对的表面上的电路在紧接在流体回路的至少一部分上方的位置及其制造方法。

8. 发明申请

US20150183154A1 BONDING METHOD AND METHOD OF MANUFACTURING MICROCHANNEL DEVICE 有权
标题翻译：制造方法和制造微通道器件的方法
公开(公告)号：US20150183154A1
公开(公告)日：2015-07-02
申请号：US14581814
申请日：2014-12-23
申请人： FUJIFILM Corporation
发明人： Kota KATO
IPC分类号： B29C65/08 , B29C65/00
CPC分类号： B29C65/08 , B01L3/502707 , B01L2200/0689 , B01L2300/0816 , B01L2300/0887 , B29C65/7829 , B29C66/112 , B29C66/1122 , B29C66/114 , B29C66/242 , B29C66/30223 , B29C66/53461 , B29C66/61 , B29C66/71 , B29C66/73365 , B29C66/73366 , B29C66/73921 , B29C66/8322 , B29C66/942 , B29C66/944 , B29C66/9492 , B29C66/9516 , B29C66/9517 , B29L2022/00 , B29L2031/756 , B81C3/001 , B81C2203/038 , B29K2023/00 , B29K2023/06 , B29K2023/12 , B29K2025/06 , B29K2067/046 , B29K2033/12 , B29K2069/00
摘要： A bonding method includes ultrasonically welding a protruding portion extending on a surface of a first substrate member to a surface of a second substrate member by applying ultrasonic vibration to the first substrate member. A protruding stopper portion for stopping welding is provided on the surface of the first substrate member formed with the protruding portion, or on the surface of the second substrate member to come in contact with the protruding portion in a pressed state, to be disposed around the protruding portion in the pressed state. The ultrasonically welding includes a first process for applying ultrasonic vibration at amplitude as a first value to the first substrate member, and a second process for applying ultrasonic vibration to the first substrate member at amplitude as a second value lower than the first value after the first process.
摘要翻译：接合方法包括通过对第一基板构件施加超声波振动将在第一基板构件的表面上延伸的突出部分超声波焊接到第二基板构件的表面。在形成有突出部分的第一基板部件的表面上或在第二基板部件的表面上设置用于停止焊接的突出止动部分，以在压紧状态下与突出部分接触，以围绕突出部分处于按压状态。超声波焊接包括以第一值作为振幅的超声波振动施加到第一基板部件的第一工序，以及第二工序，其以振幅为第一基板部件施加超声波振动，作为比第一值低的第一值处理。

9. 发明申请

US20150158112A1 METHOD FOR SEALING TWO ELEMENTS BY LOW TEMPERATURE THERMOCOMPRESSION 审中-公开
标题翻译：通过低温热塑性密封两种元素的方法
公开(公告)号：US20150158112A1
公开(公告)日：2015-06-11
申请号：US14626469
申请日：2015-02-19
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
发明人： Arnaud GARNIER
IPC分类号： B23K20/02 , B23K20/00
CPC分类号： B23K20/023 , B23K20/002 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , B81C2203/038 , H01L21/50 , H01L23/10 , H01L2924/0002 , H01L2924/0132 , H01L2924/1461 , Y10T156/10 , H01L2924/0105 , H01L2924/01079 , H01L2924/00
摘要： A sealing method between two elements includes producing a first sealing material on a face of a first of the two elements, producing a second sealing material, different from the first sealing material, on one face of a second of the two elements, securing the two elements by thermocompression of the sealing materials against each other at a temperature Tc below the melting temperatures of the first and second sealing materials, the first and second sealing materials are chosen such that they each have at least one phase able to react with the phase of the other sealing material by interdiffusion of the components of the phases of the sealing materials during the securing step and forming at least one other solid phase having a melting temperature above the temperature Tc.
摘要翻译：两个元件之间的密封方法包括在两个元件中的第一个元件的表面上产生第一密封材料，在两个元件中的第二个元件的一个表面上产生与第一密封材料不同的第二密封材料，元件通过在低于第一和第二密封材料的熔融温度的温度Tc下将密封材料彼此热压，选择第一和第二密封材料，使得它们各自具有至少一个能够与另一个密封材料通过在固定步骤期间密封材料的相的组分相互扩散并形成熔融温度高于温度Tc的至少一个其它固相。

10. 发明授权

US08765615B1 Quartz-based MEMS resonators and methods of fabricating same 有权
标题翻译：基于石英的MEMS谐振器及其制造方法
公开(公告)号：US08765615B1
公开(公告)日：2014-07-01
申请号：US12816292
申请日：2010-06-15
申请人： David T. Chang , Frederic P. Stratton , Hung Nguyen , Randall L. Kubena
发明人： David T. Chang , Frederic P. Stratton , Hung Nguyen , Randall L. Kubena
IPC分类号： H01L21/302 , H01L21/311 , H01L21/3105
CPC分类号： H01L21/31111 , B81B2201/0271 , B81C1/00238 , B81C2201/0194 , B81C2203/036 , B81C2203/038 , H01L21/31056 , H03H3/0072 , H03H2009/02291
摘要： A quart resonator for use in lower frequency applications (typically lower than the higher end of the UHF spectrum) where relatively thick quartz members, having a thickness greater than ten microns, are called for. A method for fabricating same resonator includes providing a first quart substrate; thinning the first quartz substrate to a desired thickness; forming a metallic etch stop on a portion of a first major surface of the first quartz substrate; adhesively attaching the first major surface of the first quartz substrate with the metallic etch stop formed thereon to a second quartz substrate using a temporary adhesive; etching a via though the first quartz substrate to the etch stop; forming a metal electrode on a second major surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop; bonding the metal electrode formed on the second major surface of the first quartz substrate to a pad formed on a substrate bearing oscillator drive circuitry to form a bond there between; and dissolving the temporary adhesive to thereby release the second quartz substrate from the substrate bearing oscillator drive circuitry and a portion of the first quartz substrate bonded thereto via the bond formed between the metal electrode formed on the second major surface of the first quartz substrate to and the pad formed on the substrate bearing oscillator drive circuitry.
摘要翻译：用于低频应用（通常低于UHF频谱的较高端）的夸特谐振器，其中厚度大于10微米的相对较厚的石英构件被要求。一种制造相同谐振器的方法包括提供第一夸脱基片; 将第一石英基板变薄至所需厚度; 在所述第一石英衬底的第一主表面的一部分上形成金属蚀刻停止件; 使用临时粘合剂将第一石英基板的第一主表面与其上形成的金属蚀刻停止粘合到第二石英基板上; 将通过第一石英衬底的通孔蚀刻到蚀刻停止部; 在所述第一石英衬底的第二主表面上形成金属电极，所述金属电极穿过所述第一石英衬底中的通孔以与所述金属蚀刻停止件欧姆接触; 将形成在第一石英衬底的第二主表面上的金属电极接合到形成在承载振荡器驱动电路的衬底上的焊盘，以在其之间形成结合; 并且将临时粘合剂溶解，从而从基板轴承振荡器驱动电路和第一石英基板的一部分经由形成在第一石英基板的第二主表面上的金属电极之间的键与第一石英基板接合的部分而释放第二石英基板衬垫形成在承载振荡器驱动电路的衬底上。

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