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1. 发明授权

US08077292B2 Projection exposure method 失效
标题翻译：投影曝光法
公开(公告)号：US08077292B2
公开(公告)日：2011-12-13
申请号：US12395513
申请日：2009-02-27
申请人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
发明人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
IPC分类号： G03B27/52
CPC分类号： G03B27/42 , G03B27/72
摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要翻译：一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其他区域中的强度高，掩模具有多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于八角形通过光轴。

2. 发明申请

US20090244504A1 PROJECTION EXPOSURE METHOD 失效
标题翻译：投影曝光方法
公开(公告)号：US20090244504A1
公开(公告)日：2009-10-01
申请号：US12395513
申请日：2009-02-27
申请人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
发明人： Yosuke Kitamura , Masaki Satake , Shoji Mimotogi , Kazuya Fukuhara
IPC分类号： G03B27/42 , G03B27/72
CPC分类号： G03B27/42 , G03B27/72
摘要： A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
摘要翻译：一种投影曝光方法，其通过将通过将具有用于形成孔图案的图案的掩模施加光而产生的衍射光投射到晶片上的投影光学系统进行曝光，将衍射光投射到晶片上，其中在基本上垂直于光轴的平面中，施加到掩模的光具有第一强度分布，其中在光轴中心的八边形的八个顶点附近的强度比在其它区域中的强度高，掩模具有多个第一开口图案被布置成矩形格子构型，其具有平行于通过光轴的八边形的对角线的边，并且多个第二开口图案以面向中心的矩形格子构造布置，具有平行于八角形通过光轴。

3. 发明申请

US20050153540A1 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US20050153540A1
公开(公告)日：2005-07-14
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F7/26 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

4. 发明授权

US07685556B2 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US07685556B2
公开(公告)日：2010-03-23
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

5. 发明授权

US07148138B2 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US07148138B2
公开(公告)日：2006-12-12
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： H01L21/4763
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

6. 发明申请

US20050188341A1 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US20050188341A1
公开(公告)日：2005-08-25
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G03F1/32 , G03F1/36 , G03F1/68 , G03F1/70 , G03F1/72 , G03F7/00 , G03F7/20 , G06F17/50 , H01L21/00 , H01L21/027
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

7. 发明申请

US20080004852A1 Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium 有权
标题翻译：创建模拟模型的方法，光掩模的制造方法，半导体器件的制造方法和记录介质
公开(公告)号：US20080004852A1
公开(公告)日：2008-01-03
申请号：US11806174
申请日：2007-05-30
申请人： Masaki Satake , Shoji Mimotogi
发明人： Masaki Satake , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F7/70625 , G03F7/705 , G03F7/70516
摘要： A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.
摘要翻译：一种创建仿真模型的方法，包括获取基于测试图案实际形成的光致抗蚀剂图案的CD值，获取关于光致抗蚀剂图案的形状的信息，基于测试图案获取光学图像的强度分布，通过执行模拟，获取根据对应于光致抗蚀剂图案的CD值的强度分布上的CD值定义的经验阈值，基于光学图像的强度分布获取光学图像的参数，获取第一相关性关于光致抗蚀剂图案的形状和光学图像的参数的信息，获取关于光致抗蚀剂图案的形状的信息与经验阈值之间的第二相关性，以及获取光学图像的参数和经验阈值通过使用第一和第二相关。

8. 发明授权

US07840390B2 Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium 有权
标题翻译：创建模拟模型的方法，光掩模的制造方法，半导体器件的制造方法和记录介质
公开(公告)号：US07840390B2
公开(公告)日：2010-11-23
申请号：US11806174
申请日：2007-05-30
申请人： Masaki Satake , Shoji Mimotogi
发明人： Masaki Satake , Shoji Mimotogi
IPC分类号： G06F17/10
CPC分类号： G03F7/70625 , G03F7/705 , G03F7/70516
摘要： A method of creating a simulation model, includes acquiring a CD value of a photoresist pattern actually formed based upon a test pattern, acquiring information about a shape of the photoresist pattern, acquiring an intensity distribution of an optical image based upon the test pattern by performing simulation, acquiring an empirical threshold defined according to a CD value on the intensity distribution, which corresponds to the CD value of the photoresist pattern, acquiring a parameter of the optical image based upon the intensity distribution of the optical image, acquiring a first correlation between the information about the shape of the photoresist pattern and the parameter of the optical image, acquiring a second correlation between the information about the shape of the photoresist pattern and the empirical threshold, and acquiring a third correlation between the parameter of the optical image and the empirical threshold by using first and second correlations.
摘要翻译：一种创建仿真模型的方法，包括获取基于测试图案实际形成的光致抗蚀剂图案的CD值，获取关于光致抗蚀剂图案的形状的信息，基于测试图案获取光学图像的强度分布，通过执行模拟，获取根据对应于光致抗蚀剂图案的CD值的强度分布上的CD值定义的经验阈值，基于光学图像的强度分布获取光学图像的参数，获取第一相关性关于光致抗蚀剂图案的形状和光学图像的参数的信息，获取关于光致抗蚀剂图案的形状的信息与经验阈值之间的第二相关性，以及获取光学图像的参数和经验阈值通过使用第一和第二相关。

9. 发明授权

US08381138B2 Simulation model creating method, computer program product, and method of manufacturing a semiconductor device 有权
标题翻译：模拟模型创建方法，计算机程序产品和制造半导体器件的方法
公开(公告)号：US08381138B2
公开(公告)日：2013-02-19
申请号：US13420690
申请日：2012-03-15
申请人： Tetsuaki Matsunawa , Shoji Mimotogi , Masafumi Asano
发明人： Tetsuaki Matsunawa , Shoji Mimotogi , Masafumi Asano
IPC分类号： G06F17/50
CPC分类号： G03F7/705
摘要： According to a simulation model creating method of an embodiment, a resist pattern is formed by transferring a mask pattern on a first substrate with an exposing amount and a focus value being changed, and a line width of the resist pattern is measured. Next, measurement results which are not within an allowable change range due to an irregularity of the exposing amount, an irregularity of the focus value or pattern feature amount are removed. In addition, measurement results which are not with in an allowable change range due to an irregularity of the line width of the mask pattern are removed. Next, a simulation model is created by using measurement results which are not removed.
摘要翻译：根据实施例的模拟模型创建方法，通过以暴露量和焦点值改变在第一基板上转印掩模图案并且测量抗蚀剂图案的线宽来形成抗蚀剂图案。接下来，除去由于曝光量的不规则性，焦点值或图案特征量的不规则性而在允许的变化范围内的测量结果。此外，除去由于掩模图案的线宽的不规则性而在允许的变化范围内不具有的测量结果。接下来，通过使用未被去除的测量结果来创建模拟模型。

10. 发明申请

US20120324407A1 SIMULATION MODEL CREATING METHOD, COMPUTER PROGRAM PRODUCT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：模拟模型创建方法，计算机程序产品和制造半导体器件的方法
公开(公告)号：US20120324407A1
公开(公告)日：2012-12-20
申请号：US13420690
申请日：2012-03-15
申请人： Tetsuaki MATSUNAWA , Shoji Mimotogi , Masafumi Asano
发明人： Tetsuaki MATSUNAWA , Shoji Mimotogi , Masafumi Asano
IPC分类号： G06F17/50
CPC分类号： G03F7/705
摘要： According to a simulation model creating method of an embodiment, a resist pattern is formed by transferring a mask pattern on a first substrate with an exposing amount and a focus value being changed, and a line width of the resist pattern is measured. Next, measurement results which are not within an allowable change range due to an irregularity of the exposing amount, an irregularity of the focus value or pattern feature amount are removed. In addition, measurement results which are not with in an allowable change range due to an irregularity of the line width of the mask pattern are removed. Next, a simulation model is created by using measurement results which are not removed.
摘要翻译：根据实施例的模拟模型创建方法，通过以暴露量和焦点值改变在第一基板上转印掩模图案并且测量抗蚀剂图案的线宽来形成抗蚀剂图案。接下来，除去由于曝光量的不规则性，焦点值或图案特征量的不规则性而在允许的变化范围内的测量结果。此外，除去由于掩模图案的线宽的不规则性而在允许的变化范围内不具有的测量结果。接下来，通过使用未被去除的测量结果来创建模拟模型。

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