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1. 发明申请

US20050081790A1 Film deposition device 失效
标题翻译：薄膜沉积装置
公开(公告)号：US20050081790A1
公开(公告)日：2005-04-21
申请号：US10954145
申请日：2004-09-30
申请人： Yoshiyuki Konishi , Katsutoyo Osanai
发明人： Yoshiyuki Konishi , Katsutoyo Osanai
IPC分类号： C23C14/54 , C23C16/00 , C23C16/52 , H01J37/32
CPC分类号： H01J37/32935 , C23C14/544 , C23C16/52
摘要： A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time. A calculating device is electrically connected to the plasma quantity monitoring device for calculating a thickness of the film from the plasma quantity so that the thickness is monitored at real time.
摘要翻译：用于沉积膜的成膜装置包括用于用等离子体沉积膜的沉积室。等离子体量监测装置设置在沉积室中，用于实时监测进入沉积室的等离子体量。计算装置电连接到等离子体量监测装置，用于从等离子体量计算膜的厚度，从而实时监测厚度。

2. 发明授权

US07354482B2 Film deposition device 失效
标题翻译：薄膜沉积装置
公开(公告)号：US07354482B2
公开(公告)日：2008-04-08
申请号：US10954145
申请日：2004-09-30
申请人： Yoshiyuki Konishi , Katsutoyo Osanai
发明人： Yoshiyuki Konishi , Katsutoyo Osanai
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/32935 , C23C14/544 , C23C16/52
摘要： A film deposition device for depositing a film includes a depositing chamber for depositing the film with plasma. A plasma quantity monitoring device is disposed in the depositing chamber for monitoring a plasma quantity entering the depositing chamber at real time. A calculating device is electrically connected to the plasma quantity monitoring device for calculating a thickness of the film from the plasma quantity so that the thickness is monitored at real time.
摘要翻译：用于沉积膜的成膜装置包括用于用等离子体沉积膜的沉积室。等离子体量监测装置设置在沉积室中，用于实时监测进入沉积室的等离子体量。计算装置电连接到等离子体量监测装置，用于从等离子体量计算膜的厚度，从而实时监测厚度。

3. 发明申请

US20070096711A1 DC-DC converter and control circuit thereof 失效
标题翻译： DC-DC转换器及其控制电路
公开(公告)号：US20070096711A1
公开(公告)日：2007-05-03
申请号：US11545050
申请日：2006-10-06
申请人： Takuya Ishii , Hiroki Akashi , Makoto Ishimaru , Yoshiyuki Konishi
发明人： Takuya Ishii , Hiroki Akashi , Makoto Ishimaru , Yoshiyuki Konishi
IPC分类号： G05F1/00
CPC分类号： H02M3/1563
摘要： The present invention is intended to provide a DC-DC converter, in which the relationship between the duty ratio of a drive signal and the output DC voltage is nonlinear, being characterized in that the relationship between an error signal and the output DC voltage is linear, and that the design of stabilizing the feedback system is facilitated. The DC-DC converter comprises an error-amplifier circuit for generating the error signal that is obtained by amplifying the error between the output and a target value, an oscillating circuit for generating a triangular wave signal having an amplitude corresponding to the error signal, and a comparison circuit for comparing the triangular wave signal with a reference signal having a predetermined value and for generating the drive signal to turn ON/OFF a switching device.
摘要翻译：本发明旨在提供一种DC-DC转换器，其中驱动信号的占空比与输出DC电压之间的关系是非线性的，其特征在于误差信号与输出DC电压之间的关系是线性的并且促进了稳定反馈系统的设计。 DC-DC转换器包括用于产生通过放大输出与目标值之间的误差而获得的误差信号的误差放大器电路，产生具有对应于误差信号的振幅的三角波信号的振荡电路，以及比较电路，用于将三角波信号与具有预定值的参考信号进行比较，并产生用于导通/关断开关装置的驱动信号。

4. 发明申请

US20120326661A1 CONTACTLESS POWER RECEIVING DEVICE, AND CONTACTLESS CHARGING SYSTEM 审中-公开
标题翻译：无连接电力接收装置，以及接触式充电系统
公开(公告)号：US20120326661A1
公开(公告)日：2012-12-27
申请号：US13582255
申请日：2011-03-08
申请人： Kyohei Kada , Kazuhiro Suzuki , Takaoki Matsumoto , Yoshihide Kanakubo , Yohei Nagatake , Yoshiyuki Konishi
发明人： Kyohei Kada , Kazuhiro Suzuki , Takaoki Matsumoto , Yoshihide Kanakubo , Yohei Nagatake , Yoshiyuki Konishi
IPC分类号： H02J7/00
CPC分类号： H02J7/025 , H01M10/44 , H02J50/10 , H02J50/60 , H02J50/80
摘要： A contactless power-receiving device, which is connected to equipment via a connection terminal and which supplies power to the load for the equipment, provided with: a secondary coil which intersects the alternating magnetic flux generated from a primary coil to which an alternating power is supplied; and a control unit which supplies induced electromotive force of the secondary coil to the load. The control unit determines the amount of charge in the load and determines whether or not to supply power to the load on the basis of the determined amount of charge.
摘要翻译：一种非接触式电力接收装置，其经由连接端子连接到设备，并且向设备的负载供电，该设备具有：次级线圈，其与从初级线圈产生的交流磁通相交，交流功率为供应; 以及将次级线圈的感应电动势提供给负载的控制单元。控制单元确定负载中的充电量，并且基于确定的充电量来确定是否向负载供电。

5. 发明申请

US20110262679A1 GAS BARRIER FILM AND ORGANNIC DEVICE USING THE SAME 审中-公开
标题翻译：气体阻隔膜和使用其的有机装置
公开(公告)号：US20110262679A1
公开(公告)日：2011-10-27
申请号：US13083086
申请日：2011-04-08
申请人： KAZUFUMI AZUMA , Satoko Ueno , Masayasu Suzuki , Yoshiyuki Konishi , Shinichiro Ishida
发明人： KAZUFUMI AZUMA , Satoko Ueno , Masayasu Suzuki , Yoshiyuki Konishi , Shinichiro Ishida
IPC分类号： B32B3/02 , C01B21/068 , C23C16/513
CPC分类号： H01L51/5253 , C23C16/345 , C23C16/511 , H01L51/448 , Y10T428/23
摘要： A SiNx film as a barrier film is provided. The film is formed at a low process temperature, has a high water vapor barrier performance and a high light transmittance, and is useful for sealing of a substrate formed by a flexible organic material, such as a plastic substrate. A barrier film is formed by silicon nitride (SiNx) having an atom ratio [N/(Si+N)] indicating a ratio of nitrogen N to silicon Si in the range of 0.60 to 0.65, by using a surface wave plasma chemical vapor deposition (CVD) device.
摘要翻译：提供了作为阻挡膜的SiNx膜。该薄膜形成在低的工艺温度下，具有高的水蒸气阻隔性能和高透光率，并且可用于密封由柔性有机材料（例如塑料基材）形成的基材。通过使用表面波等离子体化学气相沉积法，通过氮化硅（SiNx）形成阻挡膜，该氮化硅（SiNx）具有表示氮N与硅Si的比例在0.60至0.65范围内的原子比[N /（Si + N）] （CVD）装置。

6. 发明授权

US07541859B2 Charge pump circuit 失效
标题翻译：电荷泵电路
公开(公告)号：US07541859B2
公开(公告)日：2009-06-02
申请号：US11753671
申请日：2007-05-25
申请人： Hiroki Akashi , Takuya Ishii , Yoshiyuki Konishi , Makoto Ishimaru
发明人： Hiroki Akashi , Takuya Ishii , Yoshiyuki Konishi , Makoto Ishimaru
IPC分类号： G05F3/16 , H02M3/18
CPC分类号： H02M3/07
摘要： For downsizing a charge pump circuit which selects a voltage multiple ratio, converts its input voltage and outputs the converted voltage, the number of switching devices of the charge pump circuit is reduced. The control circuit of the charge pump circuit is configured to carry out switching control for multiple switching devices and charge/discharge at least a first capacitor and a second capacitor so as to have at least a 2Vi mode for alternately repeating a first state and a second state, and a 1.5Vi mode for alternately repeating a third state and a fourth state, thereby carrying out boosting depending on the detected input voltage.
摘要翻译：为了减小选择电压倍数的电荷泵电路，转换其输入电压并输出转换的电压，减少了电荷泵电路的开关器件的数量。电荷泵电路的控制电路被配置为对多个开关器件执行开关控制，并且至少对第一电容器和第二电容器进行充电/放电，以具有至少2Vi模式，用于交替地重复第一状态和第二状态状态和用于交替重复第三状态和第四状态的1.5Vi模式，从而根据检测到的输入电压进行升压。

7. 发明申请

US20090135521A1 Protective film forming method 有权
标题翻译：保护膜成型方法
公开(公告)号：US20090135521A1
公开(公告)日：2009-05-28
申请号：US12232091
申请日：2008-09-10
申请人： Kunihiro Ueda , Hong Xin Fang , Dong Wang , Yoshiyuki Konishi , Satoko Ueno , Shigenobu Okada
发明人： Kunihiro Ueda , Hong Xin Fang , Dong Wang , Yoshiyuki Konishi , Satoko Ueno , Shigenobu Okada
IPC分类号： G11B5/127 , G11B5/60 , B05D5/00 , C23F1/02 , B05D3/06 , C23C14/34
CPC分类号： G11B5/3106 , C23C16/0272 , C23C16/26 , G11B5/3173 , G11B5/40 , G11B5/6082
摘要： To provide a high-quality protection target by forming a protective film that is thin and excellent in corrosion resistance. Provided is a protective film forming method for forming a protective film at least on a surface of a protection target. The method comprises: a base film forming step for forming a base film on the surface of the protection target; and a DLC film forming step for forming a diamond-like carbon film on the base film. The base film forming step forms the base film on the surface of the protection target for a plurality of times by repeating a process of depositing the base film in a prescribed thickness and eliminating a part of or a whole part of the base film. Further, the method comprises, before the DLC film forming step, an insulating layer forming step for forming an insulating layer on the surface of the base film on which the diamond-like carbon film is to be formed.
摘要翻译：通过形成薄且耐腐蚀性优异的保护膜来提供高质量的保护目标。提供了至少在保护对象的表面上形成保护膜的保护膜形成方法。该方法包括：在保护目标表面上形成基膜的基膜形成步骤; 以及在基膜上形成类金刚石碳膜的DLC膜形成工序。基底膜形成步骤通过重复以预定厚度沉积基膜的过程，并且去除基膜的一部分或全部而在保护对象的表面上形成基膜多次。此外，该方法包括在DLC膜形成步骤之前，在要形成类金刚石碳膜的基膜的表面上形成绝缘层的绝缘层形成步骤。

8. 发明申请

US20090055618A1 MEMORY CONTROLLER, NONVOLATILE STORAGE DEVICE, NONVOLATILE STORAGE SYSTEM, AND NONVOLATILE MEMORY ADDRESS MANAGEMENT METHOD 失效
标题翻译：存储器控制器，非易失性存储设备，非易失性存储系统和非易失性存储器地址管理方法
公开(公告)号：US20090055618A1
公开(公告)日：2009-02-26
申请号：US11814202
申请日：2006-07-21
申请人： Masahiro Nakanishi , Tetsushi Kasahara , Tomoaki Izumi , Kiminori Matsuno , Daisuke Kunimune , Kazuaki Tamura , Yoshiyuki Konishi
发明人： Masahiro Nakanishi , Tetsushi Kasahara , Tomoaki Izumi , Kiminori Matsuno , Daisuke Kunimune , Kazuaki Tamura , Yoshiyuki Konishi
IPC分类号： G06F12/02 , G06F12/00 , G06F12/06
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7211
摘要： For address management of a nonvolatile memory, the whole logical address space is divided into logical address ranges (0 to 15), and the physical address space is divided into physical areas (segments (0 to 15)). The logical address ranges are respectively associated with the physical areas (segments) to manage the addresses. The sizes of the logical address ranges are equalized. The size of the physical area (segment (0)) corresponding to the logical address range (0) in which data of high rewrite frequency such as an FAT is expected to be stored is larger than those of the other physical areas, and the logical address ranges and the physical areas are allocated. Alternatively, the sizes of the physical areas are equalized, and the size of the logical address range (0) is set as a smaller one than those of the other logical address ranges. With this, the actual rewrite frequencies of the physical areas (segments) are equal to one another, and consequently the life of the nonvolatile memory can be prolonged.
摘要翻译：对于非易失性存储器的地址管理，整个逻辑地址空间被划分为逻辑地址范围（0至15），物理地址空间被划分为物理区域（段（0至15））。逻辑地址范围分别与物理区域（段）相关联以管理地址。逻辑地址范围的大小相等。对应于期望存储诸如FAT的高重写频率的数据的逻辑地址范围（0）的物理区域（段（0））的大小大于其他物理区域的大小，并且逻辑地址范围和物理区域被分配。或者，物理区域的大小相等，并且逻辑地址范围（0）的大小被设置为比其他逻辑地址范围的大小小。由此，物理区域（段）的实际重写频率彼此相等，因此可以延长非易失性存储器的寿命。

9. 发明申请

US20070273430A1 CHARGE PUMP CIRCUIT 失效
标题翻译：充电泵电路
公开(公告)号：US20070273430A1
公开(公告)日：2007-11-29
申请号：US11753671
申请日：2007-05-25
申请人： Hiroki Akashi , Takuya Ishii , Yoshiyuki Konishi , Makoto Ishimaru
发明人： Hiroki Akashi , Takuya Ishii , Yoshiyuki Konishi , Makoto Ishimaru
IPC分类号： G05F1/10
CPC分类号： H02M3/07
摘要： For downsizing a charge pump circuit which selects a voltage multiple ratio, converts its input voltage and outputs the converted voltage, the number of switching devices of the charge pump circuit is reduced. The control circuit of the charge pump circuit is configured to carry out switching control for multiple switching devices and charge/discharge at least a first capacitor and a second capacitor so as to have at least a 2Vi mode for alternately repeating a first state and a second state, and a 1.5Vi mode for alternately repeating a third state and a fourth state, thereby carrying out boosting depending on the detected input voltage.
摘要翻译：为了减小选择电压倍数的电荷泵电路，转换其输入电压并输出转换的电压，减少了电荷泵电路的开关器件的数量。电荷泵电路的控制电路被配置为对多个开关器件执行开关控制，并且至少对第一电容器和第二电容器进行充电/放电，以具有至少2Vi模式，用于交替地重复第一状态和第二状态状态和用于交替重复第三状态和第四状态的1.5Vi模式，从而根据检测到的输入电压进行升压。

10. 发明授权

US08051268B2 Memory controller, nonvolatile storage device, nonvolatile storage system, and nonvolatile memory address management method 失效
标题翻译：内存控制器，非易失性存储设备，非易失性存储系统和非易失性存储器地址管理方法
公开(公告)号：US08051268B2
公开(公告)日：2011-11-01
申请号：US11814202
申请日：2006-07-21
申请人： Masahiro Nakanishi , Tetsushi Kasahara , Tomoaki Izumi , Kiminori Matsuno , Daisuke Kunimune , Kazuaki Tamura , Yoshiyuki Konishi
发明人： Masahiro Nakanishi , Tetsushi Kasahara , Tomoaki Izumi , Kiminori Matsuno , Daisuke Kunimune , Kazuaki Tamura , Yoshiyuki Konishi
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7211
摘要： For address management of a nonvolatile memory, the whole logical address space is divided into logical address ranges (0 to 15), and the physical address space is divided into physical areas (segments (0 to 15)). The logical address ranges are respectively associated with the physical areas (segments) to manage the addresses. The sizes of the logical address ranges are equalized. The size of the physical area (segment (0)) corresponding to the logical address range (0) in which data of high rewrite frequency such as an FAT is expected to be stored is larger than those of the other physical areas, and the logical address ranges and the physical areas are allocated. Alternatively, the sizes of the physical areas are equalized, and the size of the logical address range (0) is set as a smaller one than those of the other logical address ranges. With this, the actual rewrite frequencies of the physical areas (segments) are equal to one another, and consequently the life of the nonvolatile memory can be prolonged.
摘要翻译：对于非易失性存储器的地址管理，整个逻辑地址空间被划分为逻辑地址范围（0至15），物理地址空间被划分为物理区域（段（0至15））。逻辑地址范围分别与物理区域（段）相关联以管理地址。逻辑地址范围的大小相等。对应于期望存储诸如FAT的高重写频率的数据的逻辑地址范围（0）的物理区域（段（0））的大小大于其他物理区域的大小，并且逻辑地址范围和物理区域被分配。或者，物理区域的大小相等，并且逻辑地址范围（0）的大小被设置为比其他逻辑地址范围的大小小。由此，物理区域（段）的实际重写频率彼此相等，因此可以延长非易失性存储器的寿命。

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