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1. 发明授权

US06509568B1 Electrostatic deflector for electron beam exposure apparatus 有权
公开(公告)号：US06509568B1
公开(公告)日：2003-01-21
申请号：US09431441
申请日：1999-11-01
申请人： Yoshihisa Ooae , Hitoshi Tanaka , Takeshi Haraguchi , Kazuto Ashiwara , Tomohiko Abe , Ryoji Kato
发明人： Yoshihisa Ooae , Hitoshi Tanaka , Takeshi Haraguchi , Kazuto Ashiwara , Tomohiko Abe , Ryoji Kato
IPC分类号： H01J338
CPC分类号： H01J37/1477 , H01J2237/151
摘要： An electron beam radiation apparatus having an electrostatic deflector capable of deflecting the electron beam with high accuracy and with a reduced displacement of the deflection position, is disclosed. The electrostatic deflector comprises a cylindrical holding member made of an insulating material and a plurality of electrodes separately fixed from each other inside of the holding member with at least a part of the surface thereof covered with a metal film. The holding member has a plurality of wedge-shaped fixing holes corresponding to the portions of the electrodes where they are fixed, respectively, the holes having a larger diameter on the outer peripheral surface than on the inner peripheral surface of the holding member. The electrodes are fixed on the holding member in such a manner that a molten joining metal is injected in the fixing holes with the electrodes arranged on the holding member and the joining metal is hardened in close contact with the metal film of the electrodes. The electrodes fixed on the holding member are so shaped that the inner wall of the holding member is invisible from the cylinder axis of the holding member. The electrodes have a metal thin film formed, by vapor deposition, on the inner wall surface of the electrodes after being fixed on the holding member.

2. 发明授权

US5945683A Electron beam exposure device 失效
标题翻译：电子束曝光装置
公开(公告)号：US5945683A
公开(公告)日：1999-08-31
申请号：US906389
申请日：1997-08-05
申请人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
发明人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
IPC分类号： H01J37/06 , H01J37/063 , H01J37/305 , H01L21/027
CPC分类号： H01J37/063 , H01J2237/30433 , H01J2237/3175
摘要： An electron beam exposure device includes an alignment optical system; an electromagnetic lens system; a stage on which the sample is provided; and an electron gun. The electron gun is comprised of an electron generating source; an electron generating source heating element which generates heat for increasing the temperature of the electron generating source; a supporting member which supports the electron generating source and the electron generating source heating element; and a Wehnelt. The electron beam exposure device is provided with at least one auxiliary heating element located at respective portion thermally connected to the electron generating source heating element.
摘要翻译：电子束曝光装置包括对准光学系统; 电磁透镜系统; 提供样品的阶段; 和电子枪。电子枪由电子发生源组成; 电子发生源加热元件，其产生用于增加电子发生源的温度的热量; 支撑电子发生源和电子发生源加热元件的支撑构件; 和一个Wehnelt。电子束曝光装置设置有至少一个位于与电子发生源加热元件热连接的相应部分处的辅助加热元件。

3. 发明授权

US6008495A Electron beam exposure device 失效
标题翻译：电子束曝光装置
公开(公告)号：US6008495A
公开(公告)日：1999-12-28
申请号：US927817
申请日：1997-09-11
申请人： Hitoshi Tanaka , Yoshihisa Ooae
发明人： Hitoshi Tanaka , Yoshihisa Ooae
IPC分类号： H01L21/027 , G03F7/20 , G21K5/04 , H01J37/09 , G21K1/02 , G21K5/08
CPC分类号： G21K5/04 , H01J37/09 , H01J2237/0456 , H01J2237/3175
摘要： An electron beam exposure device in which an electron beam from an electron beam source is passed through at least a slit of a first slit assembly. The first slit assembly includes: a base; a bearing assembly; a stage rotatably supported by the base via the bearing assembly; a stage rotation adjusting mechanism; a slit member; and at least one heat transfer path means for transferring heat of the stage to the base, wherein the at least one heat transfer path means enables the rotation of the stage by the stage rotation adjusting mechanism.
摘要翻译：电子束曝光装置，其中来自电子束源的电子束至少穿过第一狭缝组件的狭缝。第一缝合组件包括：基部; 轴承组件; 通过所述轴承组件由所述基座可旋转地支撑的台架; 舞台旋转调节机构; 狭缝构件; 以及至少一个热传递路径装置，用于将载物台的热传递到底座，其中至少一个热传递路径装置使得能够通过平台旋转调节机构旋转平台。

4. 发明授权

US5981118A Method for charged particle beam exposure with fixed barycenter through balancing stage scan 失效
标题翻译：通过平衡级扫描固定重心的带电粒子束曝光方法
公开(公告)号：US5981118A
公开(公告)日：1999-11-09
申请号：US42747
申请日：1998-03-17
申请人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
发明人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
IPC分类号： G03F7/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2037 , G03F7/2065 , H01J37/3174 , H01J2237/31774
摘要： With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.
摘要翻译：通过使用一个扫描台19，其中通过设置在扫描台19下方的晶片保持器20A至20E和平衡台21安装多个晶片16A至16E，基于多个带电粒子束曝光共同的曝光数据扫描扫描台19 扫描装置10A至10E以及平衡级21，使得扫描级19和平衡级21的重心G成为固定点。测量固定在工作台19上的反射镜70L和70R的位置，并且基于它们的值，计算级19的伸缩比和样品16A至16E的位置以获得位置与目标位置的偏差。阶段19被建模为刚性区域19A至19E松散地连接，并且对于每个区域，测量三个点的位置以计算由于每个脊状区域的旋转引起的曝光目标位置的偏差。这些偏差由偏转器18A至18D校正。

5. 发明申请

US20070181829A1 Electron-beam exposure system 审中-公开
标题翻译：电子束曝光系统
公开(公告)号：US20070181829A1
公开(公告)日：2007-08-09
申请号：US11650234
申请日：2007-01-05
申请人： Hitoshi Tanaka , Akio Yamada , Hiroshi Yasuda , Yoshihisa Ooae
发明人： Hitoshi Tanaka , Akio Yamada , Hiroshi Yasuda , Yoshihisa Ooae
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/045 , H01J2237/31761 , H01J2237/31776 , H01J2237/31788
摘要： An electron-beam exposure system includes: an electron gun; a first mask having a first opening for shaping a beam of electrons; a second mask having a second opening for shaping the beam of electrons; a stencil mask disposed below the first mask and the second mask, the stencil mask having a plurality of collective figured openings each for shaping the beam of electrons; a paralleling lens for causing the beam of electrons, which has been transmitted in, and come out of, the stencil mask, to turn into a beam of electrons which travels approximately in parallel to the optical axis; and a swing-back mask deflector for swinging back the beam of electrons which has passed through the stencil mask. N2>N1 may be satisfied where 1/N1 denotes the reduction ratio of a pattern in the stencil mask to a pattern on the surface of the workpiece, and 1/N2 denotes the reduction ratio of a pattern in the first mask and a pattern in the second mask to a pattern on the surface of the workpiece.
摘要翻译：电子束曝光系统包括：电子枪; 具有用于成形电子束的第一开口的第一掩模; 具有用于使电子束成形的第二开口的第二掩模; 设置在所述第一掩模和所述第二掩模下方的模板掩模，所述模版掩模具有多个用于使所述电子束成形的集合形状的开口; 用于使已经被传送到模板掩模中并从模板掩模出来的电子束的平行透镜转变成大致平行于光轴行进的电子束; 以及用于摆动穿过模板掩模的电子束的回摆掩模偏转器。可以满足其中1 / N 1表示模板掩模中的图案与图案上的图案的缩小比率的N <2> N <1> 表示工件的表面，1 / N 2 <2>表示第一掩模中的图案和第二掩模中的图案与工件表面上的图案的缩小率。

6. 发明授权

US6046459A Method and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US6046459A
公开(公告)日：2000-04-04
申请号：US401943
申请日：1999-09-23
申请人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
发明人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
IPC分类号： G03F7/20 , H01J37/317 , H01J37/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2037 , G03F7/2065 , H01J37/3174 , H01J2237/31774
摘要： With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.
摘要翻译：通过使用一个扫描台19，其中通过设置在扫描台19下方的晶片保持器20A至20E和平衡台21安装多个晶片16A至16E，基于多个带电粒子束曝光共同的曝光数据扫描扫描台19 扫描装置10A至10E以及平衡级21，使得扫描级19和平衡级21的重心G成为固定点。测量固定在工作台19上的反射镜70L和70R的位置，并且基于它们的值，计算级19的伸缩比和样品16A至16E的位置以获得位置与目标位置的偏差。阶段19被建模为刚性区域19A至19E松散地连接，并且对于每个区域，测量三个点的位置以计算由于每个脊状区域的旋转引起的曝光目标位置的偏差。这些偏差由偏转器18A至18D校正。

7. 发明授权

US08633758B2 Semiconductor device having boosting circuit 失效
标题翻译：具有升压电路的半导体装置
公开(公告)号：US08633758B2
公开(公告)日：2014-01-21
申请号：US13064237
申请日：2011-03-11
申请人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
发明人： Hiroki Fujisawa , Shuichi Kubouchi , Hitoshi Tanaka
IPC分类号： G05F1/10 , G05F3/02
CPC分类号： G05F1/46 , G11C5/145 , H02M1/15 , H02M3/07 , H02M2001/0045
摘要： A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.
摘要翻译：一种半导体器件包括：升压电路，其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器电路包括连接到升压电路的输出端子的可变电阻器。可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

8. 发明授权

US08620564B2 Abnormality detection apparatus and abnormality detection method for multi-cylinder internal combustion engine 有权
标题翻译：多气缸内燃机异常检测装置及异常检测方法
公开(公告)号：US08620564B2
公开(公告)日：2013-12-31
申请号：US13480921
申请日：2012-05-25
申请人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
发明人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
IPC分类号： B60T7/12 , G05D1/00 , G06F7/00 , G06F17/00
CPC分类号： F02D41/1498 , F02D41/0085 , F02D41/1495 , F02D41/22 , F02D41/3076
摘要： An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要翻译：用于多气缸内燃机的异常检测装置根据与在目标气缸的变化之前和之后检测到的目标气缸相关的旋转变化的值来改变预定目标气缸的燃料喷射量以检测内燃机的异常燃油喷射量。异常检测装置在相应的检测时间的基础上，基于发动机的转数和发动机负荷中的至少一方来校正与燃料喷射量的变化前后检测到的目标气缸的旋转变动的值。

9. 发明授权

US08493132B2 Supply voltage generating circuit 有权
公开(公告)号：US08493132B2
公开(公告)日：2013-07-23
申请号：US12052422
申请日：2008-03-20
申请人： Koichiro Hayashi , Hitoshi Tanaka
发明人： Koichiro Hayashi , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： G05F3/02 , G05F1/62 , G11C5/145 , G11C11/4074 , H02M3/07
摘要： A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.

10. 发明授权

US08471673B2 Varistor and method for manufacturing varistor 有权
标题翻译：压敏电阻及其制造方法
公开(公告)号：US08471673B2
公开(公告)日：2013-06-25
申请号：US13545505
申请日：2012-07-10
申请人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
发明人： Hitoshi Tanaka , Katsunari Moriai , Takahiro Itami
IPC分类号： H01C7/10
CPC分类号： H01C1/14 , H01C7/00 , H01C7/10 , H01C17/28 , Y10T29/49082 , Y10T29/49085
摘要： A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.
摘要翻译：变阻器设置有可变电阻元件主体，多个内部电极，布置在可变电阻元件主体中，以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极，布置在可变电阻元件的表面上并连接到相应的内部电极。外部电极具有烧结电极层，该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

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