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1. 发明授权

US06414325B1 Charged particle beam exposure apparatus and exposure method capable of highly accurate exposure in the presence of partial unevenness on the surface of exposed specimen 失效
标题翻译：带电粒子束曝光装置和曝光方法能够在暴露样品表面存在部分不均匀的情况下高度准确地曝光
公开(公告)号：US06414325B1
公开(公告)日：2002-07-02
申请号：US09352425
申请日：1999-07-13
申请人： Akio Yamada , Tatsuro Ohkawa
发明人： Akio Yamada , Tatsuro Ohkawa
IPC分类号： G01N2300
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/30455
摘要： A charged particle beam exposure apparatus capable of detecting a partial unevenness and adjusting the height of the surface of a specimen to be exposed is disclosed. This charged particle beam exposure apparatus comprises a charged particle beam source, a charged particle beam shaper, a deflector for changing the position where the charged particle beam is radiated on the specimen, a projector for projecting the charged particle beam on the specimen, and a control unit for controlling the deflector and the projector at the time of exposure. A pattern is plotted on the specimen by the charged particle beam being converged and deflected appropriately. The apparatus further comprises a stage for moving the specimen within the apparatus, and a height measuring unit for measuring the height distribution in a predetermined range of the specimen with at least a predetermined density while the specimen is loaded in the apparatus.
摘要翻译：公开了一种能够检测局部不均匀性并调整要暴露的样本的表面的高度的带电粒子束曝光装置。该带电粒子束曝光装置包括带电粒子束源，带电粒子束整形器，用于改变带电粒子束辐射在样本上的位置的偏转器，用于将带电粒子束投射在样本上的投影仪，以及控制单元，用于在曝光时控制偏转器和投影仪。通过带电粒子束收敛和适当地偏转，将图案绘制在样品上。该装置还包括用于在装置内移动样本的台，以及用于在样本被装载到装置中时以至少预定浓度测量样本的预定范围内的高度分布的高度测量单元。

2. 发明授权

US5966200A Charged particle beam exposure apparatus 失效
标题翻译：带电粒子束曝光装置
公开(公告)号：US5966200A
公开(公告)日：1999-10-12
申请号：US948478
申请日：1997-10-10
申请人： Kenichi Kawakami , Tatsuro Ohkawa , Kazushi Ishida , Akiyoshi Tsuda
发明人： Kenichi Kawakami , Tatsuro Ohkawa , Kazushi Ishida , Akiyoshi Tsuda
IPC分类号： H01L21/027 , G03F7/20 , H01J37/304 , H01L21/68 , G03B27/42 , G01B11/00 , G01N21/00
CPC分类号： G03F7/70716 , H01J37/3045 , H01L21/681 , H01J2237/3175
摘要： The present invention is a charged particle beam exposure apparatus comprising: a column portion in which an optical system for a charged particle beam is disposed; a chamber to be coupled with the column portion; a movable sample stage located in the chamber for mounting a sample thereon; and a stage position measurement device, having an optical path for measurement, along which a laser beam having a predetermined frequency is projected and is reflected by reflection means provided on the sample stage, and an optical path for reference, which in length almost equals a distance between a starting point of the optical path for measurement and the origin of the optical system in the column portion and for which the length is increased at a rate substantially consistent with a thermal expansion coefficient as material of the chamber is expanded, for measuring a change in position of the sample stage by employing a laser optical signal for measurement, which passes along the optical path for measurement, and a reference laser signal, which passes along the optical path for reference.
摘要翻译：本发明是一种带电粒子束曝光装置，包括：列部分，其中设置带电粒子束的光学系统; 与柱部分联接的室; 位于所述室中的可移动的样品台，用于在其上安装样品; 以及台架位置测量装置，具有用于测量的光路，具有预定频率的激光束沿着该光路投射并被设置在样品台上的反射装置反射，以及用于参考的光路，其长度几乎等于用于测量的光路的起始点和柱部分中的光学系统的原点之间的距离和长度以与作为材料的材料的热膨胀系数基本一致的速率增加的距离被扩大，用于测量通过采用通过用于测量的光路的测量用的激光光信号和沿光路通过的参考激光信号来改变样品台的位置。

3. 发明授权

US5969365A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
公开(公告)号：US5969365A
公开(公告)日：1999-10-19
申请号：US917464
申请日：1997-08-26
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

4. 发明授权

US06407398B1 Electron beam exposure apparatus and exposure method 失效
标题翻译：电子束曝光装置和曝光方法
公开(公告)号：US06407398B1
公开(公告)日：2002-06-18
申请号：US09442588
申请日：1999-11-17
申请人： Masaki Kurokawa , Tatsuro Ohkawa , Yoshihisa Ooae
发明人： Masaki Kurokawa , Tatsuro Ohkawa , Yoshihisa Ooae
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3174
摘要： An electron beam exposure apparatus, enabling detection of the height of a sample simply and with a high accuracy, including an electron gun, a converging unit able to converge an electron beam on a sample and make the focus position dynamically move, a deflecting unit for deflecting the electron beam, a movement mechanism for carrying and moving the sample, a deflection data and incident angle relationship storing circuit for storing the incident angle of the electron beam on the sample when the electron beam is deflected by the deflecting unit, a mark position detecting unit for detecting changes in reflected electrons at a mark provided on the sample when scanning the mark by the electron beam and thereby detecting the position of the mark, a mark position difference calculating unit for using the mark position detecting unit to scan a first mark provided on the sample by an electron beam of a first incident angle and a second mark in a predetermined positional relationship with the first mark by an electron beam of a second incident angle different from the first incident angle to detect the positions of the first and second marks and calculating the difference in the positional relationship of the first and second marks detected and the predetermined positional relationship, and a height calculating unit for calculating the height of the sample from the difference of the positional relationship of the first and second marks calculated and the relationship of the deflection data and incident angle.
摘要翻译：一种电子束曝光装置，其能够简单且高精度地检测样品的高度，包括电子枪，能够使电子束聚集在样品上并使聚焦位置动态移动的会聚单元;偏转单元，用于偏转电子束，用于携带和移动样品的移动机构，偏转数据和入射角关系存储电路，用于当电子束被偏转单元偏转时，存储电子束在样品上的入射角;标记位置检测单元，用于当通过电子束扫描标记时检测在样品上提供的标记的反射电子的变化，从而检测标记的位置;标记位置差计算单元，用于使用标记位置检测单元扫描第一标记通过第一入射角的电子束和与该第一入射角度的预定位置关系的第二标记在样品上通过不同于第一入射角的第二入射角的电子束进行标记，以检测第一和第二标记的位置，并计算检测到的第一和第二标记的位置关系与预定位置关系之间的差异，以及高度计算单元，用于根据所计算的第一和第二标记的位置关系与偏转数据与入射角的关系的差异来计算样本的高度。

5. 发明授权

US5892237A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5892237A
公开(公告)日：1999-04-06
申请号：US815436
申请日：1997-03-11
申请人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
发明人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174
摘要： In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.
摘要翻译：在带电粒子束曝光方法及其装置中，其中用于照射的带电粒子束的强度增加到最大以提高曝光程序的通过量，因此，诸如晶片的样品的温度，升高并发生热膨胀。发生的热膨胀基于投射的带电粒子束的强度具有再现性。因此，通过监视投射的带电粒子束的强度来检测热膨胀系数。将从热膨胀获取的每个照射位置的移动距离作为用于带电粒子束偏转的补偿值被添加，以提供准确的曝光程序。

6. 发明授权

US06242751B1 Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06242751B1
公开(公告)日：2001-06-05
申请号：US09353586
申请日：1999-07-15
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： H01J37302
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还提出了一种用于执行该方法的装置。

7. 发明授权

US5945683A Electron beam exposure device 失效
标题翻译：电子束曝光装置
公开(公告)号：US5945683A
公开(公告)日：1999-08-31
申请号：US906389
申请日：1997-08-05
申请人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
发明人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
IPC分类号： H01J37/06 , H01J37/063 , H01J37/305 , H01L21/027
CPC分类号： H01J37/063 , H01J2237/30433 , H01J2237/3175
摘要： An electron beam exposure device includes an alignment optical system; an electromagnetic lens system; a stage on which the sample is provided; and an electron gun. The electron gun is comprised of an electron generating source; an electron generating source heating element which generates heat for increasing the temperature of the electron generating source; a supporting member which supports the electron generating source and the electron generating source heating element; and a Wehnelt. The electron beam exposure device is provided with at least one auxiliary heating element located at respective portion thermally connected to the electron generating source heating element.
摘要翻译：电子束曝光装置包括对准光学系统; 电磁透镜系统; 提供样品的阶段; 和电子枪。电子枪由电子发生源组成; 电子发生源加热元件，其产生用于增加电子发生源的温度的热量; 支撑电子发生源和电子发生源加热元件的支撑构件; 和一个Wehnelt。电子束曝光装置设置有至少一个位于与电子发生源加热元件热连接的相应部分处的辅助加热元件。

8. 发明授权

US5757015A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5757015A
公开(公告)日：1998-05-26
申请号：US634410
申请日：1996-04-18
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还介绍了一种用于执行该方法的设备。

9. 发明授权

US5708276A Electron-beam exposure device and a method of detecting a mark position for the device 失效
标题翻译：电子束曝光装置和检测装置的标记位置的方法
公开(公告)号：US5708276A
公开(公告)日：1998-01-13
申请号：US600456
申请日：1996-02-13
申请人： Tatsuro Ohkawa , Kawakami Kenichi , Yoshihisa Ooae , Tohru Ikeda , Kazushi Ishida
发明人： Tatsuro Ohkawa , Kawakami Kenichi , Yoshihisa Ooae , Tohru Ikeda , Kazushi Ishida
IPC分类号： G01B15/00 , G03F7/20 , G03F9/00 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3045 , H01J2237/24495 , H01J2237/30438
摘要： An electron-beam exposure device having at least one deflector for deflecting an electron beam and detecting a position of a position-detection mark with the electron beam includes a plurality of detectors detecting electrons scattered from the position-detection mark, a plurality of amplifiers, each of the amplifiers amplifying an output of a corresponding one of the detectors, and a setting unit for setting amplification factors of the amplifiers such that a magnitude of an output from each of the amplifiers is constant irrespective of a deflected position of the electron beam at a time of detection of the position of the position-detection mark.
摘要翻译：具有用于偏转电子束的至少一个偏转器和用电子束检测位置检测标记的位置的电子束曝光装置包括检测从位置检测标记散射的电子的多个检测器，多个放大器，每个放大器放大对应的一个检测器的输出，以及设置单元，用于设置放大器的放大因子，使得来自每个放大器的输出的幅度恒定，而与电子束的偏转位置无关检测位置检测标记的位置的时间。

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