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1. 发明授权

US5945683A Electron beam exposure device 失效
标题翻译：电子束曝光装置
公开(公告)号：US5945683A
公开(公告)日：1999-08-31
申请号：US906389
申请日：1997-08-05
申请人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
发明人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
IPC分类号： H01J37/06 , H01J37/063 , H01J37/305 , H01L21/027
CPC分类号： H01J37/063 , H01J2237/30433 , H01J2237/3175
摘要： An electron beam exposure device includes an alignment optical system; an electromagnetic lens system; a stage on which the sample is provided; and an electron gun. The electron gun is comprised of an electron generating source; an electron generating source heating element which generates heat for increasing the temperature of the electron generating source; a supporting member which supports the electron generating source and the electron generating source heating element; and a Wehnelt. The electron beam exposure device is provided with at least one auxiliary heating element located at respective portion thermally connected to the electron generating source heating element.
摘要翻译：电子束曝光装置包括对准光学系统; 电磁透镜系统; 提供样品的阶段; 和电子枪。电子枪由电子发生源组成; 电子发生源加热元件，其产生用于增加电子发生源的温度的热量; 支撑电子发生源和电子发生源加热元件的支撑构件; 和一个Wehnelt。电子束曝光装置设置有至少一个位于与电子发生源加热元件热连接的相应部分处的辅助加热元件。

2. 发明授权

US5892237A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5892237A
公开(公告)日：1999-04-06
申请号：US815436
申请日：1997-03-11
申请人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
发明人： Kenichi Kawakami , Hiroshi Yasuda , Akio Yamada , Tatsuro Ohkawa , Mitsuhiro Nakano , Atsushi Saito , Yoshihisa Ooae
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174
摘要： In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.
摘要翻译：在带电粒子束曝光方法及其装置中，其中用于照射的带电粒子束的强度增加到最大以提高曝光程序的通过量，因此，诸如晶片的样品的温度，升高并发生热膨胀。发生的热膨胀基于投射的带电粒子束的强度具有再现性。因此，通过监视投射的带电粒子束的强度来检测热膨胀系数。将从热膨胀获取的每个照射位置的移动距离作为用于带电粒子束偏转的补偿值被添加，以提供准确的曝光程序。

3. 发明授权

US5981118A Method for charged particle beam exposure with fixed barycenter through balancing stage scan 失效
标题翻译：通过平衡级扫描固定重心的带电粒子束曝光方法
公开(公告)号：US5981118A
公开(公告)日：1999-11-09
申请号：US42747
申请日：1998-03-17
申请人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
发明人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
IPC分类号： G03F7/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2037 , G03F7/2065 , H01J37/3174 , H01J2237/31774
摘要： With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.
摘要翻译：通过使用一个扫描台19，其中通过设置在扫描台19下方的晶片保持器20A至20E和平衡台21安装多个晶片16A至16E，基于多个带电粒子束曝光共同的曝光数据扫描扫描台19 扫描装置10A至10E以及平衡级21，使得扫描级19和平衡级21的重心G成为固定点。测量固定在工作台19上的反射镜70L和70R的位置，并且基于它们的值，计算级19的伸缩比和样品16A至16E的位置以获得位置与目标位置的偏差。阶段19被建模为刚性区域19A至19E松散地连接，并且对于每个区域，测量三个点的位置以计算由于每个脊状区域的旋转引起的曝光目标位置的偏差。这些偏差由偏转器18A至18D校正。

4. 发明申请

US20070181829A1 Electron-beam exposure system 审中-公开
标题翻译：电子束曝光系统
公开(公告)号：US20070181829A1
公开(公告)日：2007-08-09
申请号：US11650234
申请日：2007-01-05
申请人： Hitoshi Tanaka , Akio Yamada , Hiroshi Yasuda , Yoshihisa Ooae
发明人： Hitoshi Tanaka , Akio Yamada , Hiroshi Yasuda , Yoshihisa Ooae
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/045 , H01J2237/31761 , H01J2237/31776 , H01J2237/31788
摘要： An electron-beam exposure system includes: an electron gun; a first mask having a first opening for shaping a beam of electrons; a second mask having a second opening for shaping the beam of electrons; a stencil mask disposed below the first mask and the second mask, the stencil mask having a plurality of collective figured openings each for shaping the beam of electrons; a paralleling lens for causing the beam of electrons, which has been transmitted in, and come out of, the stencil mask, to turn into a beam of electrons which travels approximately in parallel to the optical axis; and a swing-back mask deflector for swinging back the beam of electrons which has passed through the stencil mask. N2>N1 may be satisfied where 1/N1 denotes the reduction ratio of a pattern in the stencil mask to a pattern on the surface of the workpiece, and 1/N2 denotes the reduction ratio of a pattern in the first mask and a pattern in the second mask to a pattern on the surface of the workpiece.
摘要翻译：电子束曝光系统包括：电子枪; 具有用于成形电子束的第一开口的第一掩模; 具有用于使电子束成形的第二开口的第二掩模; 设置在所述第一掩模和所述第二掩模下方的模板掩模，所述模版掩模具有多个用于使所述电子束成形的集合形状的开口; 用于使已经被传送到模板掩模中并从模板掩模出来的电子束的平行透镜转变成大致平行于光轴行进的电子束; 以及用于摆动穿过模板掩模的电子束的回摆掩模偏转器。可以满足其中1 / N 1表示模板掩模中的图案与图案上的图案的缩小比率的N <2> N <1> 表示工件的表面，1 / N 2 <2>表示第一掩模中的图案和第二掩模中的图案与工件表面上的图案的缩小率。

5. 发明授权

US6046459A Method and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US6046459A
公开(公告)日：2000-04-04
申请号：US401943
申请日：1999-09-23
申请人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
发明人： Nobuyuki Yasutake , Yoshihisa Ooae , Kazushi Ishida , Hiroshi Yasuda , Akiyoshi Tsuda , Hitoshi Tanaka
IPC分类号： G03F7/20 , H01J37/317 , H01J37/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2037 , G03F7/2065 , H01J37/3174 , H01J2237/31774
摘要： With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.
摘要翻译：通过使用一个扫描台19，其中通过设置在扫描台19下方的晶片保持器20A至20E和平衡台21安装多个晶片16A至16E，基于多个带电粒子束曝光共同的曝光数据扫描扫描台19 扫描装置10A至10E以及平衡级21，使得扫描级19和平衡级21的重心G成为固定点。测量固定在工作台19上的反射镜70L和70R的位置，并且基于它们的值，计算级19的伸缩比和样品16A至16E的位置以获得位置与目标位置的偏差。阶段19被建模为刚性区域19A至19E松散地连接，并且对于每个区域，测量三个点的位置以计算由于每个脊状区域的旋转引起的曝光目标位置的偏差。这些偏差由偏转器18A至18D校正。

6. 发明授权

US5708276A Electron-beam exposure device and a method of detecting a mark position for the device 失效
标题翻译：电子束曝光装置和检测装置的标记位置的方法
公开(公告)号：US5708276A
公开(公告)日：1998-01-13
申请号：US600456
申请日：1996-02-13
申请人： Tatsuro Ohkawa , Kawakami Kenichi , Yoshihisa Ooae , Tohru Ikeda , Kazushi Ishida
发明人： Tatsuro Ohkawa , Kawakami Kenichi , Yoshihisa Ooae , Tohru Ikeda , Kazushi Ishida
IPC分类号： G01B15/00 , G03F7/20 , G03F9/00 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3045 , H01J2237/24495 , H01J2237/30438
摘要： An electron-beam exposure device having at least one deflector for deflecting an electron beam and detecting a position of a position-detection mark with the electron beam includes a plurality of detectors detecting electrons scattered from the position-detection mark, a plurality of amplifiers, each of the amplifiers amplifying an output of a corresponding one of the detectors, and a setting unit for setting amplification factors of the amplifiers such that a magnitude of an output from each of the amplifiers is constant irrespective of a deflected position of the electron beam at a time of detection of the position of the position-detection mark.
摘要翻译：具有用于偏转电子束的至少一个偏转器和用电子束检测位置检测标记的位置的电子束曝光装置包括检测从位置检测标记散射的电子的多个检测器，多个放大器，每个放大器放大对应的一个检测器的输出，以及设置单元，用于设置放大器的放大因子，使得来自每个放大器的输出的幅度恒定，而与电子束的偏转位置无关检测位置检测标记的位置的时间。

7. 发明授权

US06407398B1 Electron beam exposure apparatus and exposure method 失效
标题翻译：电子束曝光装置和曝光方法
公开(公告)号：US06407398B1
公开(公告)日：2002-06-18
申请号：US09442588
申请日：1999-11-17
申请人： Masaki Kurokawa , Tatsuro Ohkawa , Yoshihisa Ooae
发明人： Masaki Kurokawa , Tatsuro Ohkawa , Yoshihisa Ooae
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3174
摘要： An electron beam exposure apparatus, enabling detection of the height of a sample simply and with a high accuracy, including an electron gun, a converging unit able to converge an electron beam on a sample and make the focus position dynamically move, a deflecting unit for deflecting the electron beam, a movement mechanism for carrying and moving the sample, a deflection data and incident angle relationship storing circuit for storing the incident angle of the electron beam on the sample when the electron beam is deflected by the deflecting unit, a mark position detecting unit for detecting changes in reflected electrons at a mark provided on the sample when scanning the mark by the electron beam and thereby detecting the position of the mark, a mark position difference calculating unit for using the mark position detecting unit to scan a first mark provided on the sample by an electron beam of a first incident angle and a second mark in a predetermined positional relationship with the first mark by an electron beam of a second incident angle different from the first incident angle to detect the positions of the first and second marks and calculating the difference in the positional relationship of the first and second marks detected and the predetermined positional relationship, and a height calculating unit for calculating the height of the sample from the difference of the positional relationship of the first and second marks calculated and the relationship of the deflection data and incident angle.
摘要翻译：一种电子束曝光装置，其能够简单且高精度地检测样品的高度，包括电子枪，能够使电子束聚集在样品上并使聚焦位置动态移动的会聚单元;偏转单元，用于偏转电子束，用于携带和移动样品的移动机构，偏转数据和入射角关系存储电路，用于当电子束被偏转单元偏转时，存储电子束在样品上的入射角;标记位置检测单元，用于当通过电子束扫描标记时检测在样品上提供的标记的反射电子的变化，从而检测标记的位置;标记位置差计算单元，用于使用标记位置检测单元扫描第一标记通过第一入射角的电子束和与该第一入射角度的预定位置关系的第二标记在样品上通过不同于第一入射角的第二入射角的电子束进行标记，以检测第一和第二标记的位置，并计算检测到的第一和第二标记的位置关系与预定位置关系之间的差异，以及高度计算单元，用于根据所计算的第一和第二标记的位置关系与偏转数据与入射角的关系的差异来计算样本的高度。

8. 发明授权

US08390201B2 Multi-column electron beam exposure apparatus and magnetic field generation device 有权
标题翻译：多列电子束曝光装置及磁场发生装置
公开(公告)号：US08390201B2
公开(公告)日：2013-03-05
申请号：US12928899
申请日：2010-12-22
申请人： Hiroshi Yasuda , Yoshihisa Ooae , Takeshi Haraguchi
发明人： Hiroshi Yasuda , Yoshihisa Ooae , Takeshi Haraguchi
IPC分类号： H01J25/50
CPC分类号： H01J37/143 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3174 , H01J2237/0635 , H01J2237/14
摘要： A multi-column electron beam exposure apparatus includes: multiple column cells; an electron beam converging unit in which two annular permanent magnets and electromagnetic coils are surrounded by a ferromagnetic frame, the two annular permanent magnets being magnetized in an optical axis direction and symmetrical about the optical axis, where the electromagnetic coils adjust magnetic fields of the annular permanent magnets; and a substrate provided with circular apertures through which electron beams used in the column cells pass, respectively, where the electron beam converging unit is disposed in each of the circular apertures. The two annular permanent magnets may be disposed one above the other in the optical axis direction, and the electromagnetic coils may be provided inside or outside the annular permanent magnets in their radial direction.
摘要翻译：多列电子束曝光装置包括：多列细胞; 电子束会聚单元，其中两个环形永磁体和电磁线圈被铁磁框架包围，两个环形永磁体沿光轴方向被磁化并且围绕光轴对称，其中电磁线圈调节环形磁场永久磁铁以及设置有圆孔的基板，分别在列单元中使用的电子束通过其中电子束会聚单元设置在每个圆形孔中。两个环形永久磁铁可以在光轴方向上彼此上下配置，并且电磁线圈可以设置在环形永磁体的径向内侧或外侧。

9. 发明申请

US20080315089A1 Electron gun, electron beam exposure apparatus, and exposure method 有权
标题翻译：电子枪，电子束曝光装置和曝光方法
公开(公告)号：US20080315089A1
公开(公告)日：2008-12-25
申请号：US12151500
申请日：2008-05-07
申请人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
发明人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
IPC分类号： H01J3/02
CPC分类号： H01J37/073 , H01J2237/06316 , H01J2237/06341 , H01J2237/3175
摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.
摘要翻译：电子枪包括被配置为发射电子的电子源。电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。电子发射限制区域可以被碳覆盖。

10. 发明授权

US06268606B1 Electrostatic deflector, for electron beam exposure apparatus, with reduced charge-up 失效
标题翻译：静电偏转器，用于电子束曝光设备，具有减小的充电
公开(公告)号：US06268606B1
公开(公告)日：2001-07-31
申请号：US09337795
申请日：1999-06-22
申请人： Tomohiko Abe , Yoshihisa Ooae , Hiroshi Yasuda
发明人： Tomohiko Abe , Yoshihisa Ooae , Hiroshi Yasuda
IPC分类号： H01J3700
CPC分类号： H01J37/1472 , H01J2237/1516 , H01J2237/3175
摘要： An electrostatic deflector of an electron beam exposure apparatus is disclosed. A cylindrical holding member is made of an insulating material. An electrode including a plurality of electrode members fixedly arranged in spaced relationship to each other and having at least a portion of the surface thereof grown with a metal film is disposed inside the holding member. The electrode members each formed with a metal film on the surface thereof are made of a conductive ceramic having a resistivity selected at least in the range of 0.001 &OHgr;•cm to 1000 &OHgr;•cm.
摘要翻译：公开了电子束曝光设备的静电偏转器。圆柱形保持构件由绝缘材料制成。一种电极，其包括以彼此间隔开的关系固定地布置并且其表面的至少一部分由金属膜生长的多个电极部件设置在保持部件的内部。每个在其表面上由金属膜形成的电极构件由电阻率选择为至少在0.001欧姆·厘米到1000欧姆·厘米的范围内的导电陶瓷制成。

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