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    • 1. 发明授权
    • Semiconductor accelerometer
    • 半导体加速度计
    • US5567880A
    • 1996-10-22
    • US60832
    • 1993-05-14
    • Yoshihiro YokotaShotaro NaitoToshihiko SuzukiAkira Koide
    • Yoshihiro YokotaShotaro NaitoToshihiko SuzukiAkira Koide
    • G01P15/12G01P15/125G01P15/18H01L27/20G01P15/08
    • H01L27/20G01P15/123G01P15/125G01P15/18G01P2015/0828G01P2015/084G01P2015/0842
    • A semiconductor accelerometer includes a mass portion formed at a center of a silicon plate, a frame portion formed around the circumference of the silicon plate so as to surround the mass portion and a diaphragm portion formed in the silicon plate between the mass portion and the frame portion so as to bridge the mass portion with the frame portion, one of major surfaces of the silicon plate serving as a common continuous major surface for the mass portion, frame portion and diaphragm portion. Piezoresistance elements are formed on the common continuous major surface at the diaphraqm portion and an additional Au film is formed on the common continuous major surface at the mass portion. The additional Au film constitutes in combination with the mass portion a weight which responds to an acceleration acting thereon. The mass of the additional Au film is selected in such a manner that the center of gravity of the weight is located within an area in the mass portion having a depth corresponding to the thickness of the diaphragm portion.
    • 半导体加速度计包括形成在硅板的中心的质量部分,围绕质量部分形成在硅板的周围的框架部分,以及形成在质量部分和框架之间的硅板中的膜部分 为了将质量部分与框架部分桥接,硅板的主表面之一用作质量部分,框架部分和隔膜部分的共同的连续主表面。 压电元件形成在引线部分的公共连续主表面上,并且在质量部分的公共连续主表面上形成附加的Au膜。 附加的Au膜与质量部分组合构成对作用在其上的加速度作出响应的重量。 选择附加Au膜的质量使得重量的重心位于质量部分中具有与膜部分的厚度相对应的深度的区域内。