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    • 1. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US06264748B1
    • 2001-07-24
    • US09130104
    • 1998-08-06
    • Yasuyuki KurikiHideyuki TakamoriKozo Hara
    • Yasuyuki KurikiHideyuki TakamoriKozo Hara
    • C23C1600
    • H01L21/67173C23C16/54H01L21/67742
    • A substrate processing apparatus comprises a processing section having a plurality of process units for applying a series of processes including a resist coating to a processing substrate, a developing process to an exposed substrate, and an etching to the developed processing substrate, a main transferring mechanism, moving along a transferring path, for transferring/receiving the processing substrate to/from the respective process units, and a loading/unloading portion having a transferring/receiving mechanism for transferring/receiving the processing substrate to/from the main transferring apparatus, wherein these process units, the transferring path, and the loading/unloading portion are integrally provided.
    • 一种基板处理装置,包括具有多个处理单元的处理单元,所述处理单元用于向处理基板施加包括抗蚀剂涂层的一系列处理,对曝光基板的显影处理以及对显影处理基板的蚀刻,主转印机构 沿着传送路径移动,用于向/从各个处理单元传送/接收处理基板;以及装载/卸载部分,具有用于向/从主传送装置传送/接收处理基板的传送/接收机构,其中 这些处理单元,传送路径和装载/卸载部分是一体的。
    • 2. 发明授权
    • Coating apparatus and coating method
    • 涂布设备和涂布方法
    • US06635113B2
    • 2003-10-21
    • US09313860
    • 1999-05-18
    • Hideyuki TakamoriNoriyuki AnaiMasafumi NomuraKiyohisa TateyamaTsutae Omori
    • Hideyuki TakamoriNoriyuki AnaiMasafumi NomuraKiyohisa TateyamaTsutae Omori
    • B05C1110
    • H01L21/6715
    • A substrate is held on a spin chuck, and resist solution is supplied to the surface of the substrate at a plurality of positions spaced at predetermined intervals from a plurality of resist nozzles provided the bottom surface of a resist pipe provided over a first direction across the surface of the substrate. Thereafter, the substrate is oscillated or rotated, thereby making the resist solution on the substrate a thin coating film with a uniform thickness. In the coating apparatus and method, which are excellent in responsiveness to a degree of viscosity of coating solution, various kinds of treatment agents with a wide range of viscosity can be used, and mechanical accuracy such as the space between the nozzles and the substrate, accuracy of the nozzle size, and the like can be loosened.
    • 将基板保持在旋转卡盘上,并且将抗蚀剂溶液以多个位置间隔开的多个位置从多个抗蚀剂喷嘴供应到基板的表面,所述多个抗蚀剂喷嘴设置在沿着第一方向设置的抗蚀剂管的底表面 基板的表面。 此后,基板振荡或旋转,从而使抗蚀剂溶液在基板上具有均匀厚度的薄涂层膜。 在对涂布液的粘度的响应性优异的涂布装置和方法中,可以使用具有宽范围粘度的各种处理剂,并且可以使用诸如喷嘴和基板之间的空间的机械精度, 可以使喷嘴尺寸的精度等松动。
    • 5. 发明授权
    • Coating film forming method and coating apparatus
    • 涂膜成型方法和涂布装置
    • US06319317B1
    • 2001-11-20
    • US09551876
    • 2000-04-18
    • Hideyuki Takamori
    • Hideyuki Takamori
    • B05C1302
    • H01L21/6715B05C11/08G03F7/162Y10S134/902Y10S430/136Y10T137/0324
    • A spreading state of an outline of the outer periphery of a coating solution is detected by a detecting sensor, and the rotation speed or the like of a wafer as a substrate is controlled so that a spreading speed of the outline becomes not more than a predetermined speed with no danger of producing a scratchpad. Alternatively, the width in the radius direction of a scratchpad is measured, and the rotation speed or the like of the wafer is controlled so that the width in the radius direction becomes not more than a predetermined value. Thereby, occurrence of the scratchpad is prevented or the degree thereof is decreased, thereby avoiding uncoating of the coating solution on the substrate and reducing the amount of the coating solution used.
    • 通过检测传感器检测涂布溶液的外周的轮廓的扩展状态,并且控制作为基板的晶片的旋转速度等,使得轮廓的扩展速度不超过预定的 没有产生便签的危险。 或者,测量暂存器的半径方向的宽度,并且控制晶片的旋转速度等,使得半径方向上的宽度不超过预定值。 因此,防止了暂存器的发生或其程度降低,从而避免了涂布液在基板上的涂覆,并减少了所用的涂布溶液的量。
    • 6. 发明授权
    • Coating film forming method and coating apparatus
    • 涂膜成型方法和涂布装置
    • US06485782B2
    • 2002-11-26
    • US09984381
    • 2001-10-30
    • Hideyuki Takamori
    • Hideyuki Takamori
    • B05D512
    • H01L21/6715B05C11/08G03F7/162Y10S134/902Y10S430/136Y10T137/0324
    • A spreading state of an outline of the outer periphery of a coating solution is detected by a detecting sensor, and the rotation speed or the like of a wafer as a substrate is controlled so that a spreading speed of the outline becomes not more than a predetermined speed with no danger of producing a scratchpad. Alternatively, the width in the radius direction of a scratchpad is measured, and the rotation speed or the like of the wafer is controlled so that the width in the radius direction becomes not more than a predetermined value. Thereby, occurrence of the scratchpad is prevented or the degree thereof is decreased, thereby avoiding uncoating of the coating solution on the substrate and reducing the amount of the coating solution used.
    • 通过检测传感器检测涂布溶液的外周的轮廓的扩展状态,并且控制作为基板的晶片的旋转速度等,使得轮廓的扩展速度不超过预定的 没有产生便签的危险。 或者,测量暂存器的半径方向的宽度,并且控制晶片的旋转速度等,使得半径方向上的宽度不超过预定值。 因此,防止了暂存器的发生或其程度降低,从而避免了涂布液在基板上的涂覆,并减少了所用的涂布溶液的量。
    • 7. 发明授权
    • Substrate processing method and substrate processing apparatus
    • 基板处理方法和基板处理装置
    • US07550043B2
    • 2009-06-23
    • US10735926
    • 2003-12-16
    • Masatoshi ShiraishiMasatsugu NakamaHideyuki Takamori
    • Masatoshi ShiraishiMasatsugu NakamaHideyuki Takamori
    • B05C11/10G03D5/00
    • H01L21/67178G03F7/168G03F7/2022H01L21/6715H01L21/67173
    • A processing chamber actually performs a heating process for a substrate. The processing chamber has an upper plate, a lower plate, and an exhaust opening. The upper plate heats a resist from a front surface of the substrate. The lower plate heats the resist from a rear surface of the substrate. The exhaust opening exhausts gas from the processing chamber. The upper plate is disposed in such a manner that it can be raised and lowered in the processing chamber by an upper air cylinder that composes an upper driving mechanism. The lower plate is disposed on a floor of the processing chamber. The exhaust opening is connected to a pump through a pipe. Heating temperature and heating time of the upper plate and the lower plate are controlled by a heating control portion. A pressure in the processing chamber is controlled by a pump. The pump is controlled by a pressure controlling portion.
    • 处理室实际上对基板进行加热处理。 处理室具有上板,下板和排气口。 上板从基板的前表面加热抗蚀剂。 下板从基板的后表面加热抗蚀剂。 排气口从处理室排出气体。 上板以能够由构成上部驱动机构的上部气缸在处理室内升降的方式配置。 下板设置在处理室的地板上。 排气口通过管道连接到泵。 上板和下板的加热温度和加热时间由加热控制部控制。 处理室中的压力由泵控制。 泵由压力控制部分控制。
    • 8. 发明授权
    • Substrate processing method
    • 基板加工方法
    • US06306455B1
    • 2001-10-23
    • US09141721
    • 1998-08-27
    • Hideyuki TakamoriMasafumi NomuraTsutae Omori
    • Hideyuki TakamoriMasafumi NomuraTsutae Omori
    • B05D312
    • H01L21/67248B05C11/08B05D1/005H01L21/6838
    • A method of processing a substrate for forming a coating film on a substrate comprising the steps of (a) mounting a substrate on a temperature controlling means which is capable of having a heat influence on the substrate, and controlling temperature of the substrate by the temperature controlling means, (b) controlling temperature of a coating solution to be supplied to the substrate, (c) controlling temperature of a contact member in contact with the substrate when the substrate is transported and held, (d) detecting temperature of an atmosphere of a process space for applying the coating solution to the substrate, (e) setting a desired temperature on the basis of temperature/film-thickness data previously obtained by forming the coating film on the substrate, (f) controlling a temperature controlling operation of at least step (c) on the basis of the desired temperature set in the step (e) and the temperature detected in the step (d), and (g) applying the coating solution to the substrate.
    • 一种处理在基板上形成涂膜的基板的方法,包括以下步骤:(a)将基板安装在能够对基板产生热影响的温度控制装置上,并将基板的温度控制在温度 控制装置,(b)控制供给到基板的涂布液的温度,(c)控制基板被输送和保持时与基板接触的接触部件的温度,(d)检测温度, 用于将涂布溶液涂布到基板上的处理空间,(e)基于通过在基板上形成涂膜而获得的温度/膜厚度数据设定所需温度,(f)控制在基板上的温度控制操作 基于步骤(e)中设定的所需温度和步骤(d)中检测到的温度,最小步骤(c),和(g)将涂布溶液施加到副 策划