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1. 发明授权

US06361600B1 Film forming apparatus and film forming method 失效
公开(公告)号：US06361600B1
公开(公告)日：2002-03-26
申请号：US09366959
申请日：1999-08-04
申请人： Kiyohisa Tateyama , Tsutae Omori
发明人： Kiyohisa Tateyama , Tsutae Omori
IPC分类号： B05C1102
CPC分类号： H01L21/6715 , B05C11/08 , Y10T74/19074 , Y10T74/19102
摘要： A drive pulley is disposed to a driving motor. A plurality of follower pulleys are disposed to a rotating shaft of a spin chuck that vacuum sucks a substrate. A belt is passed from one follower pulley to the drive pulley. Belts are passed from the other follower pulleys to the drive shafts of a plurality of air motors. Since the air motors assist the driving of the driving motor, a large substrate can be rotated at a predetermined rotating acceleration. Thus, a film forming apparatus and a film forming method that allow the quantity of process solution supplied to be reduced and a film of process solution to be equally formed on a substrate can be provided.

2. 发明授权

US06165552A Film forming method 失效
标题翻译：成膜方法
公开(公告)号：US06165552A
公开(公告)日：2000-12-26
申请号：US135408
申请日：1998-08-18
申请人： Noriyuki Anai , Tsutae Omori , Masaaki Takizawa , Mitsuhiro Sakai
发明人： Noriyuki Anai , Tsutae Omori , Masaaki Takizawa , Mitsuhiro Sakai
IPC分类号： B01D19/00 , B05D1/00 , B05D5/00 , G03F7/16 , H01L21/00 , B05D1/40
CPC分类号： H01L21/6715 , B01D19/0005 , B01D19/0031 , B05D1/005 , B05D5/00 , G03F7/162 , Y10S118/04
摘要： A film-forming method comprises the steps of: (a) holding a rectangular substrate by a spin chuck provided in a cup; (b) positioning a solvent supply nozzle above the rectangular substrate and supplying a solvent to the rectangular substrate, the solvent supply nozzle having a liquid discharge port which has a length at least corresponding to that of a peripheral portion of the rectangular substrate; (c) positioning a process liquid supply nozzle above the rectangular substrate and supplying a process liquid to a portion at a rotation center portion of the rectangular substrate, thereby to form a film; (d) rotating the rectangular substrate in the cup to adjust a film thickness of the film; and (e) thereafter positioning the solvent supply nozzle above one peripheral portion of the rectangular substrate and supplying the solvent to the one peripheral portion of the rectangular substrate, whereby the film is removed from the one peripheral portion of the rectangular substrate, the substrate being subsequently rotated by the spin chuck to position the solvent supply nozzle to another peripheral portion of the rectangular substrate, whereby the film is removed from the another peripheral portion of the rectangular substrate.
摘要翻译：一种成膜方法包括以下步骤：（a）通过设置在杯中的旋转卡盘保持矩形基板; （b）将溶剂供应喷嘴定位在矩形基板上方并将溶剂供应到矩形基板上，所述溶剂供应喷嘴具有至少对应于矩形基板的周边部分的长度的液体排出口; （c）将工艺液体供给喷嘴定位在矩形基板上方并将处理液体供给到矩形基板的旋转中心部分的部分，从而形成膜; （d）使杯中的矩形基板旋转以调节膜的膜厚度; 和（e）然后将溶剂供给喷嘴定位在矩形基板的一个周边部分上方，并将溶剂供应到矩形基板的一个周边部分，由此从矩形基板的一个周边部分去除膜，基板为随后通过旋转卡盘旋转以将溶剂供应喷嘴定位到矩形基板的另一个周边部分，由此从矩形基板的另一个周边部分移除薄膜。

3. 外观设计

USD415776S Apparatus for manufacturing a semiconductor for a liquid crystal display 失效
公开(公告)号：USD415776S
公开(公告)日：1999-10-26
申请号：US90241
申请日：1998-07-01
申请人： Noriyuki Anai , Tsutae Omori , Shinkou Matsumoto
设计人： Noriyuki Anai , Tsutae Omori , Shinkou Matsumoto

4. 发明授权

US5695817A Method of forming a coating film 失效
标题翻译：形成涂膜的方法
公开(公告)号：US5695817A
公开(公告)日：1997-12-09
申请号：US512018
申请日：1995-08-07
申请人： Kiyohisa Tateyama , Kimio Motoda , Kenji Sekiguchi , Tsutae Omori
发明人： Kiyohisa Tateyama , Kimio Motoda , Kenji Sekiguchi , Tsutae Omori
IPC分类号： B05D1/00 , G03F7/16 , B05D3/12
CPC分类号： B05D1/005 , G03F7/162
摘要： A method of forming a coating film, in which the coating film is formed by supplying a coating liquid onto a surface of a substrate, while the substrate housed in a processing vessel is rotated together with the processing vessel, includes the steps of coating the surface of the substrate with a solvent, supplying the coating liquid to the substrate, rotating the substrate and the processing vessel at a first rotation speed to diffuse the coating liquid on the surface of the substrate, closing the processing vessel with a lid to seal the substrate in the processing vessel, and rotating the processing vessel with the lid and the substrate at a second rotation speed to uniform a film thickness of the coating film.
摘要翻译：一种形成涂膜的方法，其中通过将涂覆液体供给到基材的表面上形成涂膜，同时容纳在处理容器中的基材与处理容器一起旋转，包括以下步骤：将表面的溶剂，将涂布液供给到基板，以第一旋转速度旋转基板和处理容器，以将涂布液扩散到基板的表面上，用盖子封闭处理容器以密封基板在处理容器中，并且以第二转速旋转具有盖和基板的处理容器以使涂膜的膜厚均匀。

5. 发明授权

US5681614A Hydrophobic treatment method involving delivery of a liquid process agent to a process space 失效
标题翻译：涉及将液体加工剂输送到工艺空间的疏水处理方法
公开(公告)号：US5681614A
公开(公告)日：1997-10-28
申请号：US595785
申请日：1996-02-02
申请人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
发明人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
IPC分类号： G03F7/16 , C23C16/44 , C23C16/448 , H01L21/027 , H01L21/30 , C23C16/52
CPC分类号： C23C16/4485 , C23C16/4412 , Y10S427/101
摘要： An apparatus for hydrophobic treatment of a semiconductor wafer comprises a tank in which HMDS liquid is stored, a process chamber in which the wafer is treated, and a unit for supplying HMDS liquid from the tank into the process chamber in an amount needed at any desired time. The process chamber can be decompressed by an ejector which is connected to the process chamber through an exhaust pipe. A mount on which the wafer is mounted is arranged in the process chamber and it includes a heater embedded therein. A ring surrounds the mount and two liquid receiving recesses are formed on the top of the ring. Two HMDS liquid supply pipes extend just above their corresponding liquid receiving recesses. HMDS in liquid phase is supplied into the process chamber and vaporized in it. The density of HMDS gas in the process chamber is controlled by adjusting the amount of HMDS liquid supplied.
摘要翻译：用于半导体晶片的疏水处理的设备包括其中存储HMDS液体的罐，处理所述晶片的处理室，以及用于将HMDS液体从所述罐供应到所述处理室中的单元，其以任何所需的量时间。处理室可以通过排气管连接到处理室的喷射器进行减压。安装有晶片的安装件布置在处理室中，并且其包括嵌入其中的加热器。一个环围绕安装座，两个液体接收凹口形成在环的顶部。两个HMDS液体供应管正好在其相应的液体接收凹槽上方延伸。液相中的HMDS被供应到处理室中并在其中蒸发。通过调节供应的HMDS液体的量来控制处理室中的HMDS气体的密度。

6. 发明授权

US5505781A Hydrophobic processing apparatus including a liquid delivery system 失效
标题翻译：疏水处理装置，包括液体输送系统
公开(公告)号：US5505781A
公开(公告)日：1996-04-09
申请号：US189071
申请日：1994-01-28
申请人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
发明人： Tsutae Omori , Kouji Harada , Takami Satoh , Noriyuki Anai , Masafumi Nomura
IPC分类号： G03F7/16 , C23C16/44 , C23C16/448 , H01L21/027 , H01L21/30 , C23C16/00
CPC分类号： C23C16/4485 , C23C16/4412 , Y10S427/101
摘要： An apparatus for hydrophobic treatment of a semiconductor wafer comprises a tank in which HMDS liquid is stored, a process chamber in which the wafer is treated, and a unit for supplying HMDS liquid from the tank into the process chamber in an amount needed at any desired time. The process chamber can be decompressed by an ejector which is connected to the process chamber through an exhaust pipe. A mount on which the wafer is mounted is arranged in the process chamber and it includes a heater embedded therein. A ring surrounds the mount and two liquid receiving recesses are formed on the top of the ring. Two HMDS liquid supply pipes extend just above their corresponding liquid receiving recesses. HMDS in liquid phase is supplied into the process chamber and vaporized in it. The density of HMDS gas in the process chamber is controlled by adjusting the amount of HMDS liquid supplied.
摘要翻译：用于半导体晶片的疏水处理的设备包括其中存储HMDS液体的罐，处理所述晶片的处理室，以及用于将HMDS液体从所述罐供应到所述处理室中的单元，其以任何所需的量时间。处理室可以通过排气管连接到处理室的喷射器进行减压。安装有晶片的安装件布置在处理室中，并且其包括嵌入其中的加热器。一个环围绕安装座，两个液体接收凹口形成在环的顶部。两个HMDS液体供应管正好在其相应的液体接收凹槽上方延伸。液相中的HMDS被供应到处理室中并在其中蒸发。通过调节供应的HMDS液体的量来控制处理室中的HMDS气体的密度。

7. 发明授权

US06709523B1 Silylation treatment unit and method 失效
公开(公告)号：US06709523B1
公开(公告)日：2004-03-23
申请号：US09713247
申请日：2000-11-16
申请人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
发明人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
IPC分类号： C23C1600
CPC分类号： H01L21/67109 , G03F7/265 , G03F7/70991
摘要： A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.

8. 发明授权

US06706322B2 Film forming apparatus and film forming method 失效
标题翻译：成膜装置及成膜方法
公开(公告)号：US06706322B2
公开(公告)日：2004-03-16
申请号：US10062506
申请日：2002-02-05
申请人： Kiyohisa Tateyama , Tsutae Omori
发明人： Kiyohisa Tateyama , Tsutae Omori
IPC分类号： B05D312
CPC分类号： H01L21/6715 , B05C11/08 , Y10T74/19074 , Y10T74/19102
摘要： A drive pulley is disposed to a driving motor. A plurality of follower pulleys are disposed to a rotating shaft of a spin chuck that vacuum sucks a substrate. A belt is passed from one follower pulley to the drive pulley. Belts are passed from the other follower pulleys to the drive shafts of a plurality of air motors. Since the air motors assist the driving of the driving motor, a large substrate can be rotated at a predetermined rotating acceleration. Thus, a film forming apparatus and a film forming method that allow the quantity of process solution supplied to be reduced and a film of process solution to be equally formed on a substrate can be provided.
摘要翻译：驱动皮带轮设置在驱动马达上。多个从动带轮设置在旋转卡盘的旋转轴上，真空吸附基板。皮带从一个从动轮传递到驱动皮带轮。皮带从其他从动滑轮传递到多个气动马达的驱动轴。由于空气马达有助于驱动马达的驱动，因此可以以预定的旋转加速度旋转大的基板。因此，可以提供允许提供的处理溶液量减少并且可以在基板上同样形成处理溶液膜的成膜装置和成膜方法。

9. 发明授权

US06398429B1 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06398429B1
公开(公告)日：2002-06-04
申请号：US09524282
申请日：2000-03-13
申请人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
发明人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
IPC分类号： G03D500
CPC分类号： G03D5/04 , G03F7/3021 , G03F7/38 , Y10S134/902
摘要： A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.
摘要翻译：将具有光敏基团的溶液施加到抗蚀剂膜上，将显影液施加到其上，并且具有光敏基团的溶液的整个表面全部被曝光。在具有感光性自由基的溶液的涂膜溶解在显影液中之后，抗蚀剂膜的显影全部进行，因此在基板表面上不会发生显影开始时间的时间差，从而能够均匀显影以及衬底表面的线宽均匀性（CD值均匀性）的改善。

10. 发明授权

US06306455B1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US06306455B1
公开(公告)日：2001-10-23
申请号：US09141721
申请日：1998-08-27
申请人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
发明人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
IPC分类号： B05D312
CPC分类号： H01L21/67248 , B05C11/08 , B05D1/005 , H01L21/6838
摘要： A method of processing a substrate for forming a coating film on a substrate comprising the steps of (a) mounting a substrate on a temperature controlling means which is capable of having a heat influence on the substrate, and controlling temperature of the substrate by the temperature controlling means, (b) controlling temperature of a coating solution to be supplied to the substrate, (c) controlling temperature of a contact member in contact with the substrate when the substrate is transported and held, (d) detecting temperature of an atmosphere of a process space for applying the coating solution to the substrate, (e) setting a desired temperature on the basis of temperature/film-thickness data previously obtained by forming the coating film on the substrate, (f) controlling a temperature controlling operation of at least step (c) on the basis of the desired temperature set in the step (e) and the temperature detected in the step (d), and (g) applying the coating solution to the substrate.
摘要翻译：一种处理在基板上形成涂膜的基板的方法，包括以下步骤：（a）将基板安装在能够对基板产生热影响的温度控制装置上，并将基板的温度控制在温度控制装置，（b）控制供给到基板的涂布液的温度，（c）控制基板被输送和保持时与基板接触的接触部件的温度，（d）检测温度，用于将涂布溶液涂布到基板上的处理空间，（e）基于通过在基板上形成涂膜而获得的温度/膜厚度数据设定所需温度，（f）控制在基板上的温度控制操作基于步骤（e）中设定的所需温度和步骤（d）中检测到的温度，最小步骤（c），和（g）将涂布溶液施加到副策划

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