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1. 发明授权

US06635113B2 Coating apparatus and coating method 失效
标题翻译：涂布设备和涂布方法
公开(公告)号：US06635113B2
公开(公告)日：2003-10-21
申请号：US09313860
申请日：1999-05-18
申请人： Hideyuki Takamori , Noriyuki Anai , Masafumi Nomura , Kiyohisa Tateyama , Tsutae Omori
发明人： Hideyuki Takamori , Noriyuki Anai , Masafumi Nomura , Kiyohisa Tateyama , Tsutae Omori
IPC分类号： B05C1110
CPC分类号： H01L21/6715
摘要： A substrate is held on a spin chuck, and resist solution is supplied to the surface of the substrate at a plurality of positions spaced at predetermined intervals from a plurality of resist nozzles provided the bottom surface of a resist pipe provided over a first direction across the surface of the substrate. Thereafter, the substrate is oscillated or rotated, thereby making the resist solution on the substrate a thin coating film with a uniform thickness. In the coating apparatus and method, which are excellent in responsiveness to a degree of viscosity of coating solution, various kinds of treatment agents with a wide range of viscosity can be used, and mechanical accuracy such as the space between the nozzles and the substrate, accuracy of the nozzle size, and the like can be loosened.
摘要翻译：将基板保持在旋转卡盘上，并且将抗蚀剂溶液以多个位置间隔开的多个位置从多个抗蚀剂喷嘴供应到基板的表面，所述多个抗蚀剂喷嘴设置在沿着第一方向设置的抗蚀剂管的底表面基板的表面。此后，基板振荡或旋转，从而使抗蚀剂溶液在基板上具有均匀厚度的薄涂层膜。在对涂布液的粘度的响应性优异的涂布装置和方法中，可以使用具有宽范围粘度的各种处理剂，并且可以使用诸如喷嘴和基板之间的空间的机械精度，可以使喷嘴尺寸的精度等松动。

2. 发明授权

US6159541A Spin coating process 失效
标题翻译：旋涂工艺
公开(公告)号：US6159541A
公开(公告)日：2000-12-12
申请号：US182414
申请日：1998-10-30
申请人： Mitsuhiro Sakai , Hideyuki Takamori , Masafumi Nomura
发明人： Mitsuhiro Sakai , Hideyuki Takamori , Masafumi Nomura
IPC分类号： B05C13/02 , B05C11/08 , B05D1/00 , B05D1/40 , B05D3/12 , G03F7/16 , H01L21/00
CPC分类号： H01L21/6715 , B05C11/08 , B05D1/005 , G03F7/162
摘要： A coating process comprises the steps of (a) holding a substrate using a spin chuck surrounded by inner and outer cups, such that the substrate can rotate, (b) rotating the substrate by rotating the spin chuck, and applying a coating liquid onto the substrate, thereby forming a coating on the substrate, (c) discharging, from the inner and outer cups, that part of the coating liquid which is scattered from the substrate while the substrate is rotated, (d) exhausting the inner and outer cups through a plurality of exhaust ports formed in outer peripheral portions of the outer cup, and (e) reducing, from a peripheral region of the substrate, the mist of the coating liquid which has occurred during the step (b), before the substrate stops rotation.
摘要翻译：涂覆方法包括以下步骤：（a）使用由内杯和外杯围绕的旋转卡盘保持基底，使得基底可以旋转，（b）通过旋转旋转卡盘旋转基底，并将涂布液施加到从而在基板上形成涂层，（c）从内杯和外杯排出在基板旋转时从基板散射的涂布液的一部分，（d）将内杯和外杯排出形成在所述外杯的外周部的多个排气口，以及（e）在所述基板停止旋转之前，从所述基板的周边区域减少所述步骤（b）中发生的所述涂布液的雾。

3. 发明授权

US06837672B1 Apparatus for and method of transferring substrates 失效
公开(公告)号：US06837672B1
公开(公告)日：2005-01-04
申请号：US09676496
申请日：2000-10-02
申请人： Kiyohisa Tateyama , Hideyuki Takamori
发明人： Kiyohisa Tateyama , Hideyuki Takamori
IPC分类号： B65G49/07 , H01L21/677 , H01L21/683 , H01L21/687
CPC分类号： H01L21/6838 , H01L21/67742 , H01L21/68707 , Y10S414/136 , Y10S414/141
摘要： A substrate transfer apparatus capable of preventing contaminants from sticking to a substrate again when the substrate is unloaded, wherein a first support member and a second support member are provided on an arm, the first support member supporting the substrate when the substrate is loaded into a processing machine and the second support member supporting the substrate when the substrate is unloaded from the processing machine.

4. 发明授权

US06319317B1 Coating film forming method and coating apparatus 有权
标题翻译：涂膜成型方法和涂布装置
公开(公告)号：US06319317B1
公开(公告)日：2001-11-20
申请号：US09551876
申请日：2000-04-18
申请人： Hideyuki Takamori
发明人： Hideyuki Takamori
IPC分类号： B05C1302
CPC分类号： H01L21/6715 , B05C11/08 , G03F7/162 , Y10S134/902 , Y10S430/136 , Y10T137/0324
摘要： A spreading state of an outline of the outer periphery of a coating solution is detected by a detecting sensor, and the rotation speed or the like of a wafer as a substrate is controlled so that a spreading speed of the outline becomes not more than a predetermined speed with no danger of producing a scratchpad. Alternatively, the width in the radius direction of a scratchpad is measured, and the rotation speed or the like of the wafer is controlled so that the width in the radius direction becomes not more than a predetermined value. Thereby, occurrence of the scratchpad is prevented or the degree thereof is decreased, thereby avoiding uncoating of the coating solution on the substrate and reducing the amount of the coating solution used.
摘要翻译：通过检测传感器检测涂布溶液的外周的轮廓的扩展状态，并且控制作为基板的晶片的旋转速度等，使得轮廓的扩展速度不超过预定的没有产生便签的危险。或者，测量暂存器的半径方向的宽度，并且控制晶片的旋转速度等，使得半径方向上的宽度不超过预定值。因此，防止了暂存器的发生或其程度降低，从而避免了涂布液在基板上的涂覆，并减少了所用的涂布溶液的量。

5. 发明授权

US07550043B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07550043B2
公开(公告)日：2009-06-23
申请号：US10735926
申请日：2003-12-16
申请人： Masatoshi Shiraishi , Masatsugu Nakama , Hideyuki Takamori
发明人： Masatoshi Shiraishi , Masatsugu Nakama , Hideyuki Takamori
IPC分类号： B05C11/10 , G03D5/00
CPC分类号： H01L21/67178 , G03F7/168 , G03F7/2022 , H01L21/6715 , H01L21/67173
摘要： A processing chamber actually performs a heating process for a substrate. The processing chamber has an upper plate, a lower plate, and an exhaust opening. The upper plate heats a resist from a front surface of the substrate. The lower plate heats the resist from a rear surface of the substrate. The exhaust opening exhausts gas from the processing chamber. The upper plate is disposed in such a manner that it can be raised and lowered in the processing chamber by an upper air cylinder that composes an upper driving mechanism. The lower plate is disposed on a floor of the processing chamber. The exhaust opening is connected to a pump through a pipe. Heating temperature and heating time of the upper plate and the lower plate are controlled by a heating control portion. A pressure in the processing chamber is controlled by a pump. The pump is controlled by a pressure controlling portion.
摘要翻译：处理室实际上对基板进行加热处理。处理室具有上板，下板和排气口。上板从基板的前表面加热抗蚀剂。下板从基板的后表面加热抗蚀剂。排气口从处理室排出气体。上板以能够由构成上部驱动机构的上部气缸在处理室内升降的方式配置。下板设置在处理室的地板上。排气口通过管道连接到泵。上板和下板的加热温度和加热时间由加热控制部控制。处理室中的压力由泵控制。泵由压力控制部分控制。

6. 发明授权

US06306455B1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US06306455B1
公开(公告)日：2001-10-23
申请号：US09141721
申请日：1998-08-27
申请人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
发明人： Hideyuki Takamori , Masafumi Nomura , Tsutae Omori
IPC分类号： B05D312
CPC分类号： H01L21/67248 , B05C11/08 , B05D1/005 , H01L21/6838
摘要： A method of processing a substrate for forming a coating film on a substrate comprising the steps of (a) mounting a substrate on a temperature controlling means which is capable of having a heat influence on the substrate, and controlling temperature of the substrate by the temperature controlling means, (b) controlling temperature of a coating solution to be supplied to the substrate, (c) controlling temperature of a contact member in contact with the substrate when the substrate is transported and held, (d) detecting temperature of an atmosphere of a process space for applying the coating solution to the substrate, (e) setting a desired temperature on the basis of temperature/film-thickness data previously obtained by forming the coating film on the substrate, (f) controlling a temperature controlling operation of at least step (c) on the basis of the desired temperature set in the step (e) and the temperature detected in the step (d), and (g) applying the coating solution to the substrate.
摘要翻译：一种处理在基板上形成涂膜的基板的方法，包括以下步骤：（a）将基板安装在能够对基板产生热影响的温度控制装置上，并将基板的温度控制在温度控制装置，（b）控制供给到基板的涂布液的温度，（c）控制基板被输送和保持时与基板接触的接触部件的温度，（d）检测温度，用于将涂布溶液涂布到基板上的处理空间，（e）基于通过在基板上形成涂膜而获得的温度/膜厚度数据设定所需温度，（f）控制在基板上的温度控制操作基于步骤（e）中设定的所需温度和步骤（d）中检测到的温度，最小步骤（c），和（g）将涂布溶液施加到副策划

7. 发明授权

US06261007B1 Substrate process method and substrate process apparatus 失效
标题翻译：基板工艺方法和基板工艺装置
公开(公告)号：US06261007B1
公开(公告)日：2001-07-17
申请号：US09362860
申请日：1999-07-29
申请人： Hideyuki Takamori , Kiyohisa Tateyama , Kengo Mizosaki , Noriyuki Anai , Mitsuhiro Sakai , Shinobu Tanaka , Yoichi Honda , Yuji Shimomura
发明人： Hideyuki Takamori , Kiyohisa Tateyama , Kengo Mizosaki , Noriyuki Anai , Mitsuhiro Sakai , Shinobu Tanaka , Yoichi Honda , Yuji Shimomura
IPC分类号： G03D500
CPC分类号： H01L21/6715 , G03F7/168 , H01L21/67034
摘要： Just after resist solution is coated on a substrate, it is dried substantially in a non-heating state. In reality, inertia gas or the like is blown from a shower head to the substrate. Thus, the resist solution coated on the substrate is dried. Consequently, transfer marks that cause the film thickness of resist film to be unequal and the line width of a circuit pattern to fluctuate can be prevented.
摘要翻译：刚刚将抗蚀剂溶液涂覆在基材上之后，其基本处于非加热状态。实际上，惯性气体等从喷头吹送到基板。因此，涂布在基板上的抗蚀剂溶液被干燥。因此，可以防止导致抗蚀剂膜的膜厚度不均匀的转印标记和电路图案的线宽波动。

8. 发明授权

US6152677A Apparatus for and method of transferring substrates 失效
标题翻译：用于传送衬底的设备和方法
公开(公告)号：US6152677A
公开(公告)日：2000-11-28
申请号：US75927
申请日：1998-05-12
申请人： Kiyohisa Tateyama , Hideyuki Takamori
发明人： Kiyohisa Tateyama , Hideyuki Takamori
IPC分类号： B65G49/07 , H01L21/677 , H01L21/683 , H01L21/687 , B66C1/00
CPC分类号： H01L21/6838 , H01L21/67742 , H01L21/68707 , Y10S414/136 , Y10S414/141
摘要： A substrate transfer apparatus capable of preventing contaminants from sticking to a substrate again when the substrate is unloaded, wherein a first support member and a second support member are provided on an arm, the first support member supporting the substrate when the substrate is loaded into a processing machine and the second support member supporting the substrate when the substrate is unloaded from the processing machine.
摘要翻译：一种基板输送装置，其能够在基板卸载时能够再次防止污染物粘附到基板上，其中，第一支撑构件和第二支撑构件设置在臂上，所述第一支撑构件在将基板装载到基板中时支撑基板处理机器和第二支撑构件，当从处理机器卸载基板时，支撑基板。

9. 发明授权

US5514852A Heat treatment device 失效
标题翻译：热处理装置
公开(公告)号：US5514852A
公开(公告)日：1996-05-07
申请号：US258206
申请日：1994-06-10
申请人： Hideyuki Takamori , Takami Satoh
发明人： Hideyuki Takamori , Takami Satoh
IPC分类号： B05C9/14 , F27D99/00 , G03F7/26 , H01L21/00 , H01L21/027 , H01L21/30 , H01L21/324 , H01L21/683 , F27B9/06
CPC分类号： F27D99/0001 , H01L21/67103
摘要： A heat treatment device comprises a table of a thermal conductor located in a housing carrying an object of treatment thereon, and a treatment heat source located in the housing and by the table so that a bottom face of the table is opposite to a top face of the heat source, whereby the object of treatment in heat-treated through the table. An annular groove is formed in the top face of the heat source and evacuated so that the substrate and heat source are securely attached thereby increasing the heat conduction between them.
摘要翻译：一种热处理装置，其特征在于，包括位于外壳上的热导体的工作台，所述热导体位于所述壳体内的处理对象上，处理热源位于所述壳体和所述工作台中，使得所述工作台的底面与热源，从而通过桌子进行热处理的处理对象。在热源的顶面上形成环形槽，并将其排出，从而使基板和热源牢固地连接，从而增加它们之间的热传导。

10. 发明授权

US5416047A Method for applying process solution to substrates 失效
标题翻译：将工艺溶液应用于基材的方法
公开(公告)号：US5416047A
公开(公告)日：1995-05-16
申请号：US93699
申请日：1993-07-20
申请人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama , Masaaki Murakami , Norimitsu Morioka , Takashi Takekuma
发明人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama , Masaaki Murakami , Norimitsu Morioka , Takashi Takekuma
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L21/67173 , H01L21/6715 , H01L21/6719 , Y10S430/136
摘要： A substrate solution-processing method comprising the steps of preparing a pair of spin chucks by which semiconductor wafers are supported, a housing by which the wafers supported by the spin chucks are enclosed, motor for rotating the spin chucks, a nozzle through which developing or resist solution is applied to each wafer, means for moving the nozzle between the wafers, and a waiting trench at which the nozzle is kept waiting, setting substantially same the times needed to finish the cycles of processing the wafers supported on at least two spin chucks and delaying one process cycle from the other, and keeping the nozzle waiting at the waiting trench unless developing or resist solution is applied to each wafer through the nozzle.
摘要翻译：一种基板溶液处理方法，包括以下步骤：准备一对支撑半导体晶片的旋转卡盘，包围由旋转卡盘支撑的晶片的壳体，用于旋转旋转卡盘的马达，用于旋转旋转卡盘的马达，将抗蚀剂溶液施加到每个晶片，用于在晶片之间移动喷嘴的装置以及喷嘴保持等待的等待沟槽，其设置与完成在至少两个旋转夹头上支撑的晶片的处理循环所需的时间基本相同并且从另一个延迟一个处理周期，并且保持喷嘴等待在等待沟槽，除非通过喷嘴对每个晶片施加显影和抗蚀剂溶液。

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