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    • 7. 发明授权
    • Magneto-resistance effect device with improved thermal resistance
    • 具有改善热阻的磁阻效应器件
    • US5903708A
    • 1999-05-11
    • US453788
    • 1995-05-30
    • Hiroshi KanoAtsuko SuzukiToshihiko Yaoi
    • Hiroshi KanoAtsuko SuzukiToshihiko Yaoi
    • G01R33/09H01L43/00
    • B82Y25/00G01R33/093
    • A magneto-resistance effect film of an artificial lattice film structure having an alternate lamination of a conductor layer and a magnetic layer, or a magneto-resistance effect film of a spin bulb structure having a lamination of a magnetic layer, a conductor layer and a magnetic layer in that order. The conducting layer is mainly composed of an element selected from the group consisting of Cu, Ag and Cr and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1 percent. Alternatively, the magnetic layer is mainly composed of Fe, Co or Ni and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1%. Additionally, the thermal resistance can be improved by utilizing a base plate with a heat conductivity of not less than 2 W/mK.
    • 具有导体层和磁性层的交替叠层的人造晶格膜结构的磁阻效应膜或具有磁性层,导体层和导体层的层叠的自旋电极结构的磁阻效应膜 磁层。 导电层主要由选自Cu,Ag和Cr的元素组成,并且相对于作为主要元素,在室温下还含有0.1至30原子%的具有固溶上限的添加元素 组成部分不超过1%。 或者,磁性层主要由Fe,Co或Ni组成,并且相对于作为主要成分的元素的室温下,还含有0.1〜30原子%的相对于作为主成分的元素的固溶上限的添加元素 %。 此外,通过利用导热率不低于2W / mK的基板可以提高耐热性。