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1. 发明授权

US06365948B1 Magnetic tunneling junction device 失效
标题翻译：磁隧道连接装置
公开(公告)号：US06365948B1
公开(公告)日：2002-04-02
申请号：US08824716
申请日：1997-03-26
申请人： Seiji Kumagai , Toshihiko Yaoi , Yoshito Ikeda
发明人： Seiji Kumagai , Toshihiko Yaoi , Yoshito Ikeda
IPC分类号： H01L2982
CPC分类号： H01L43/08
摘要： A magnetic tunneling effect device capable of displaying a so-called magnetic tunneling effect in stability, more specifically, a magnetic tunneling junction device in which a first magnetic metal layer and a second magnetic metal layer are connected together by ferromagnetic tunnel junction via an insulating layer and in which the conductance of the tunnel current is changed by the relative angle of magnetization of these magnetic metal layers. The ferromagnetic tunnel junction has a junction area of not larger than 1 10−9 m2. For reliably controlling the junction area of the ferromagnetic tunnel junction, the insulating layer is formed by a first insulating layer for ferromagnetic tunnel junction and a second insulating layer formed on the first insulating layer for controlling the junction area of the ferromagnetic tunnel junction.
摘要翻译：一种能够稳定地显示所谓的磁隧道效应的磁隧道效应装置，更具体地说，是一种磁性隧道接合装置，其中第一磁性金属层和第二磁性金属层通过铁磁隧道结通过绝缘层连接在一起并且其中隧道电流的电导被这些磁性金属层的相对磁化角改变。铁磁隧道结的接合面积不大于1 10-9平方米。为了可靠地控制铁磁隧道结的接合面，绝缘层由用于铁磁隧道结的第一绝缘层和形成在第一绝缘层上的第二绝缘层形成，用于控制铁磁隧道结的结面积。

2. 发明授权

US5946168A Magneto-resistance effect device and magnetic head 失效
标题翻译：磁阻效应器和磁头
公开(公告)号：US5946168A
公开(公告)日：1999-08-31
申请号：US823899
申请日：1997-03-25
申请人： Minoru Hashimoto , Nobuhiro Sugawara , Toshihiko Yaoi , Hiroshi Kano
发明人： Minoru Hashimoto , Nobuhiro Sugawara , Toshihiko Yaoi , Hiroshi Kano
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , H01L43/08
摘要： A magneto-resistance effect device (MR device) in which stable magneto-resistance characteristics may be achieved even if a layer of a soft magnetic material is reduced in width. The MR device includes a layer of a soft magnetic material 1, a rear end electrode 4, connected to one longitudinal end of the layer of a soft magnetic material 1, and a forward end electrode 5 connected to the opposite end of the soft magnetic material 1. On both ends of the layer of the soft magnetic material 1 are arranged magnetic domain stabilizers 2, 3 generating a bias magnetic field having a component parallel to the direction of width of the layer of a soft magnetic material 1. If the bias magnetic field sufficient to overcome the longitudinal magnetostatic anisotropy can be impressed, the direction of magnetization D.sub.f of the mono-layer soft magnetic material 1 is oriented in the direction of width. The electrical resistance of the magnetic domain stabilizers 2, 3 is selected to be larger than that of the soft magnetic material 1 for suppressing loss of the sense current i. The MR device 10 can be applied with advantage to a so-called vertical type MR head.
摘要翻译：即使软磁性材料层的宽度减小，也可以获得稳定的磁阻特性的磁阻效应器件（MR器件）。 MR装置包括软磁性材料层1，后端电极4，其连接到软磁性材料层1的一个纵向端部，前端电极5连接到软磁性材料的另一端在软磁性材料层1的两端设置有磁畴稳定器2,3，产生具有与软磁性材料1的层的宽度方向平行的分量的偏置磁场。如果偏磁可以印制足以克服纵向静磁各向异性的场，单层软磁材料1的磁化方向Df在宽度方向上取向。选择磁畴稳定器2,3的电阻大于软磁材料1的电阻，以抑制感测电流i的损失。 MR器件10可以有利地应用于所谓的垂直型MR头。

3. 发明授权

US5903708A Magneto-resistance effect device with improved thermal resistance 失效
标题翻译：具有改善热阻的磁阻效应器件
公开(公告)号：US5903708A
公开(公告)日：1999-05-11
申请号：US453788
申请日：1995-05-30
申请人： Hiroshi Kano , Atsuko Suzuki , Toshihiko Yaoi
发明人： Hiroshi Kano , Atsuko Suzuki , Toshihiko Yaoi
IPC分类号： G01R33/09 , H01L43/00
CPC分类号： B82Y25/00 , G01R33/093
摘要： A magneto-resistance effect film of an artificial lattice film structure having an alternate lamination of a conductor layer and a magnetic layer, or a magneto-resistance effect film of a spin bulb structure having a lamination of a magnetic layer, a conductor layer and a magnetic layer in that order. The conducting layer is mainly composed of an element selected from the group consisting of Cu, Ag and Cr and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1 percent. Alternatively, the magnetic layer is mainly composed of Fe, Co or Ni and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1%. Additionally, the thermal resistance can be improved by utilizing a base plate with a heat conductivity of not less than 2 W/mK.
摘要翻译：具有导体层和磁性层的交替叠层的人造晶格膜结构的磁阻效应膜或具有磁性层，导体层和导体层的层叠的自旋电极结构的磁阻效应膜磁层。导电层主要由选自Cu，Ag和Cr的元素组成，并且相对于作为主要元素，在室温下还含有0.1至30原子％的具有固溶上限的添加元素组成部分不超过1％。或者，磁性层主要由Fe，Co或Ni组成，并且相对于作为主要成分的元素的室温下，还含有0.1〜30原子％的相对于作为主成分的元素的固溶上限的添加元素％。此外，通过利用导热率不低于2W / mK的基板可以提高耐热性。

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