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1. 发明授权

US5903708A Magneto-resistance effect device with improved thermal resistance 失效
标题翻译：具有改善热阻的磁阻效应器件
公开(公告)号：US5903708A
公开(公告)日：1999-05-11
申请号：US453788
申请日：1995-05-30
申请人： Hiroshi Kano , Atsuko Suzuki , Toshihiko Yaoi
发明人： Hiroshi Kano , Atsuko Suzuki , Toshihiko Yaoi
IPC分类号： G01R33/09 , H01L43/00
CPC分类号： B82Y25/00 , G01R33/093
摘要： A magneto-resistance effect film of an artificial lattice film structure having an alternate lamination of a conductor layer and a magnetic layer, or a magneto-resistance effect film of a spin bulb structure having a lamination of a magnetic layer, a conductor layer and a magnetic layer in that order. The conducting layer is mainly composed of an element selected from the group consisting of Cu, Ag and Cr and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1 percent. Alternatively, the magnetic layer is mainly composed of Fe, Co or Ni and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1%. Additionally, the thermal resistance can be improved by utilizing a base plate with a heat conductivity of not less than 2 W/mK.
摘要翻译：具有导体层和磁性层的交替叠层的人造晶格膜结构的磁阻效应膜或具有磁性层，导体层和导体层的层叠的自旋电极结构的磁阻效应膜磁层。导电层主要由选自Cu，Ag和Cr的元素组成，并且相对于作为主要元素，在室温下还含有0.1至30原子％的具有固溶上限的添加元素组成部分不超过1％。或者，磁性层主要由Fe，Co或Ni组成，并且相对于作为主要成分的元素的室温下，还含有0.1〜30原子％的相对于作为主成分的元素的固溶上限的添加元素％。此外，通过利用导热率不低于2W / mK的基板可以提高耐热性。

2. 发明授权

US5946168A Magneto-resistance effect device and magnetic head 失效
标题翻译：磁阻效应器和磁头
公开(公告)号：US5946168A
公开(公告)日：1999-08-31
申请号：US823899
申请日：1997-03-25
申请人： Minoru Hashimoto , Nobuhiro Sugawara , Toshihiko Yaoi , Hiroshi Kano
发明人： Minoru Hashimoto , Nobuhiro Sugawara , Toshihiko Yaoi , Hiroshi Kano
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , H01L43/08
摘要： A magneto-resistance effect device (MR device) in which stable magneto-resistance characteristics may be achieved even if a layer of a soft magnetic material is reduced in width. The MR device includes a layer of a soft magnetic material 1, a rear end electrode 4, connected to one longitudinal end of the layer of a soft magnetic material 1, and a forward end electrode 5 connected to the opposite end of the soft magnetic material 1. On both ends of the layer of the soft magnetic material 1 are arranged magnetic domain stabilizers 2, 3 generating a bias magnetic field having a component parallel to the direction of width of the layer of a soft magnetic material 1. If the bias magnetic field sufficient to overcome the longitudinal magnetostatic anisotropy can be impressed, the direction of magnetization D.sub.f of the mono-layer soft magnetic material 1 is oriented in the direction of width. The electrical resistance of the magnetic domain stabilizers 2, 3 is selected to be larger than that of the soft magnetic material 1 for suppressing loss of the sense current i. The MR device 10 can be applied with advantage to a so-called vertical type MR head.
摘要翻译：即使软磁性材料层的宽度减小，也可以获得稳定的磁阻特性的磁阻效应器件（MR器件）。 MR装置包括软磁性材料层1，后端电极4，其连接到软磁性材料层1的一个纵向端部，前端电极5连接到软磁性材料的另一端在软磁性材料层1的两端设置有磁畴稳定器2,3，产生具有与软磁性材料1的层的宽度方向平行的分量的偏置磁场。如果偏磁可以印制足以克服纵向静磁各向异性的场，单层软磁材料1的磁化方向Df在宽度方向上取向。选择磁畴稳定器2,3的电阻大于软磁材料1的电阻，以抑制感测电流i的损失。 MR器件10可以有利地应用于所谓的垂直型MR头。

3. 发明授权

US5699214A Magnetic information detecting apparatus 失效
标题翻译：磁信息检测装置
公开(公告)号：US5699214A
公开(公告)日：1997-12-16
申请号：US665353
申请日：1996-06-17
申请人： Hiroshi Kano , Kenji Katori , Kazuhiko Hayashi , Akihiko Okabe , Kiyoshi Kagawa , Atsuko Suzuki
发明人： Hiroshi Kano , Kenji Katori , Kazuhiko Hayashi , Akihiko Okabe , Kiyoshi Kagawa , Atsuko Suzuki
IPC分类号： G01D5/245 , G01B7/00 , G01D5/14 , G01D5/16 , G01P3/50 , G01R33/09 , G11B5/008 , G11B5/10 , G11B5/37 , G11B5/39 , G11B5/48 , H01L43/06 , H01L43/08 , G11B5/33 , G01P3/42
CPC分类号： B82Y10/00 , B82Y25/00 , G01B7/003 , G01D5/145 , G01P3/50 , G11B5/008 , G11B5/10 , G11B5/37 , G11B5/39 , G11B5/488 , G11B2005/3996
摘要： A magnetic information detecting apparatus is disclosed including a recording medium in which magnetic information is recorded and a magnetic field detection unit for detecting the magnetic information, the magnetic field detection unit having its magnetic field detecting section formed of a magnetoresistive element or a Hall element, the magnetic field detecting section surrounding peripheries of the recording medium. The recording medium has a substantially circular cross section. The magnetoresistive element has a structure of an artificial multilayer film formed by alternately stacking a conductor layer and a magnetic layer. The magnetic field detection unit has a soft magnetic body for conducting a magnetic field to the magnetic field detecting section.
摘要翻译：公开了一种磁信息检测装置，其包括记录有磁信息的记录介质和用于检测磁信息的磁场检测单元，该磁场检测单元具有由磁阻元件或霍尔元件形成的磁场检测部，所述磁场检测部分围绕所述记录介质的周边。记录介质具有大致圆形的横截面。磁阻元件具有通过交替层叠导体层和磁性层而形成的人造多层膜的结构。磁场检测单元具有用于对磁场检测部进行磁场的软磁体。

4. 发明授权

US5568115A Artificial lattice film and magneto-resistance effect element using the same 失效
标题翻译：使用人造晶格膜和磁阻效应元件
公开(公告)号：US5568115A
公开(公告)日：1996-10-22
申请号：US356588
申请日：1994-12-15
申请人： Hiroshi Kano , Atsuko Suzuki , Kiyoshi Kagawa , Akihiko Okabe
发明人： Hiroshi Kano , Atsuko Suzuki , Kiyoshi Kagawa , Akihiko Okabe
IPC分类号： G11B5/39 , H01F10/08 , H01F10/14 , H01F10/32 , H01L43/08 , H01L43/10 , H01L43/00
CPC分类号： B82Y25/00 , H01F10/324 , H01L43/10
摘要： An artificial lattice film is constituted as a multilayered film in which magnetic layers containing Cu of 1.about.50 atomic percentage and at least one component selected from Fe, Ni and Co and conductive layers are stacked one after another. By forming such an artificial lattice film on a non-magnetic substrate, a magneto-resistance effect element having excellent characteristic for use as magnetic head or magnetic sensor is provided.
摘要翻译：人造晶格膜构成为多层膜，其中含有1％F原子百分比的Cu和至少一种选自Fe，Ni和Co的组分和导电层的磁性层的层叠在一起。通过在非磁性基板上形成这样的人造晶格膜，提供了具有优异的用作磁头或磁传感器的特性的磁阻效应元件。

5. 发明授权

US10764495B2 Image processing apparatus, image processing method, storage medium, system, and electronic apparatus 有权
公开(公告)号：US10764495B2
公开(公告)日：2020-09-01
申请号：US16217536
申请日：2018-12-12
申请人： Hiroyasu Uehara , Masakazu Terauchi , Masashi Miyata , Hiroshi Kano , Akira Nakano , Takeyoshi Nishimura
发明人： Hiroyasu Uehara , Masakazu Terauchi , Masashi Miyata , Hiroshi Kano , Akira Nakano , Takeyoshi Nishimura
IPC分类号： H04N5/262 , H04N5/232 , H04N5/347 , H04N5/349
摘要： An image processing apparatus includes processing circuitry. The processing circuitry is configured to detect a positional shift amount of each of a plurality of images; select a composite target image from the plurality of images based on the detected positional shift amount; and obtain a composite image based on the positional shift amount and the selected composite target image.

6. 发明申请

US20130082659A1 BATTERY PACK, ELECTRICITY ACCUMULATION SYSTEM, ELECTRONIC INSTRUMENT, ELECTRIC VEHICLE, AND ELECTRIC POWER SYSTEM 有权
标题翻译：电池组，电力蓄能系统，电子仪器，电动车和电力系统
公开(公告)号：US20130082659A1
公开(公告)日：2013-04-04
申请号：US13614602
申请日：2012-09-13
申请人： Hiroshi Kano
发明人： Hiroshi Kano
IPC分类号： H02J7/00 , H02J9/00 , H01M2/10 , B60L1/00
CPC分类号： H01M2/105 , Y10T307/625
摘要： Provided is a battery pack including: an exterior case formed with one or more hole sections; a battery cell in which a positive electrode terminal section is formed on one end surface thereof and a negative electrode terminal section is formed on the other end surface thereof; a battery holder having a plurality of battery cell receiving sections receiving the battery cell; and a metal plate joined to the battery holder and formed with a terminal contact section.
摘要翻译：提供一种电池组，其包括：形成有一个或多个孔部分的外壳; 在其一个端面形成有正极端子部的电池单元，在其另一端面上形成负极端子部; 电池座，具有接收所述电池单元的多个电池单元容纳部; 以及与电池座连接并形成有端子接触部的金属板。

7. 发明授权

US08093301B2 Anti-allergic agent 有权
标题翻译：抗过敏剂
公开(公告)号：US08093301B2
公开(公告)日：2012-01-10
申请号：US12064917
申请日：2006-08-25
申请人： Hiroshi Kano , Syuji Ikegami
发明人： Hiroshi Kano , Syuji Ikegami
IPC分类号： A61K31/192 , A61K31/136 , A61K31/122 , A61P37/08
CPC分类号： A61K31/122 , A61K31/135 , A61K31/136 , A61K31/192 , A61K31/196
摘要： The inventors have found that vitamin K3 and vitamin K5 which may be used in pharmaceuticals and foods or ACNQ, DHNA, or the like which can stimulate the growth of bifidobacteria can inhibit degranulation of basophil-like cells, exhibit a potent degranulation-inhibiting effect, and are useful anti-allergic agents or foods. The present invention provides an anti-allergic agent containing, as an active ingredient, one or more species selected from among 2-amino-3-carboxy-1,4-naphthoquinone, 1,4-dihydroxy-2-naphthoic acid, 1,4-naphthoquinone, 4-amino-2-methyl-1-naphthol, 2-methyl-1,4-naphthoquinone, 2-amino-3-chloro-1,4-naphthoquinone, and a salt thereof.
摘要翻译：本发明人发现可用于药物和食品中的维生素K 3和维生素K5或可刺激双歧杆菌生长的ACNQ，DHNA等可以抑制嗜碱性粒细胞的脱颗粒，显示出有效的脱颗粒抑制作用，并且是有用的抗过敏剂或食物。本发明提供一种抗过敏剂，其含有选自2-氨基-3-羧基-1,4-萘醌，1,4-二羟基-2-萘甲酸，1,6-己二醇， 4-萘基醌，4-氨基-2-甲基-1-萘酚，2-甲基-1,4-萘醌，2-氨基-3-氯-1,4-萘醌及其盐。

8. 发明申请

US20100328992A1 MEMORY 有权
标题翻译：记忆
公开(公告)号：US20100328992A1
公开(公告)日：2010-12-30
申请号：US12817327
申请日：2010-06-17
申请人： Hiroshi Kano , Yutaka Higo , Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Shinichiro Kusunoki , Yuki Oishi , Kazutaka Yamane , Kazuhiro Bessho , Minoru Ikarashi
发明人： Hiroshi Kano , Yutaka Higo , Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Shinichiro Kusunoki , Yuki Oishi , Kazutaka Yamane , Kazuhiro Bessho , Minoru Ikarashi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/005 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C17/16 , G11C29/50 , G11C2029/4402 , Y10S977/935
摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.
摘要翻译：存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

9. 发明申请

US20100314673A1 MEMORY DEVICE AND MEMORY 有权
标题翻译：存储器和存储器
公开(公告)号：US20100314673A1
公开(公告)日：2010-12-16
申请号：US12796802
申请日：2010-06-09
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
IPC分类号： H01L27/115
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3277 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.
摘要翻译：存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

10. 发明申请

US20100135068A1 RESISTANCE-CHANGE MEMORY DEVICE 失效
标题翻译：电阻变化存储器件
公开(公告)号：US20100135068A1
公开(公告)日：2010-06-03
申请号：US12629660
申请日：2009-12-02
申请人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
发明人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
IPC分类号： G11C11/02 , H01L43/00
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.
摘要翻译：提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。

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