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1. 发明授权

US08437584B2 Optical I/O array module and its fabrication method 有权
标题翻译：光I / O阵列模块及其制作方法
公开(公告)号：US08437584B2
公开(公告)日：2013-05-07
申请号：US12844452
申请日：2010-07-27
申请人： Yasunobu Matsuoka , Toshiki Sugawara , Koichiro Adachi , Naoki Matsushima , Saori Hamamura , Madoka Minagawa , Norio Chujo
发明人： Yasunobu Matsuoka , Toshiki Sugawara , Koichiro Adachi , Naoki Matsushima , Saori Hamamura , Madoka Minagawa , Norio Chujo
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/43 , G02B6/4214 , G02B6/423 , H01S5/423 , Y10T29/49117
摘要： In fabricating an optical I/O array module, an optical waveguide provided with mirror parts, each having a tapered face, is formed on a substrate, a convex shaped member or a concave shaped member is placed at spots above the respective mirror parts of the optical waveguide, and laser diode arrays and photo diode arrays, provided with either a concave shape, or a convex shape, are mated with, or into the convex shaped member or the concave shaped member before being mounted. Further, there are formed multiple filmy layers, on which an LSI where a driver IC LSI of optical elements, and an amplifier LSI of the optical elements are integrated.
摘要翻译：在制造光学I / O阵列模块时，在衬底上形成具有锥面的镜部分的光波导，凸形或凹形的部件位于光波导，激光二极管阵列和具有凹形或凸形的光电二极管阵列在安装之前与凸形构件或凹形构件配合或配合。此外，形成有多个膜层，其上集成有光学元件的驱动器IC LSI和光学元件的放大器LSI的LSI。

2. 发明申请

US20110026878A1 Optical I/O Array Module and Its Fabrication Method 有权
标题翻译：光学I / O阵列模块及其制作方法
公开(公告)号：US20110026878A1
公开(公告)日：2011-02-03
申请号：US12844452
申请日：2010-07-27
申请人： Yasunobu MATSUOKA , Toshiki Sugawara , Koichiro Adachi , Naoki Matsushima , Saori Hamamura , Madoka Minagawa , Norio Chujo
发明人： Yasunobu MATSUOKA , Toshiki Sugawara , Koichiro Adachi , Naoki Matsushima , Saori Hamamura , Madoka Minagawa , Norio Chujo
IPC分类号： G02B6/12 , G02B6/30 , H01R43/00
CPC分类号： G02B6/43 , G02B6/4214 , G02B6/423 , H01S5/423 , Y10T29/49117
摘要： In fabricating an optical I/O array module, an optical waveguide provided with mirror parts, each having a tapered face, is formed on a substrate, a convex shaped member or a concave shaped member is placed at spots above the respective mirror parts of the optical waveguide, and laser diode arrays and photo diode arrays, provided with either a concave shape, or a convex shape, are mated with, or into the convex shaped member or the concave shaped member before being mounted. Further, there are formed multiple filmy layers, on which an LSI where a driver IC LSI of optical elements, and an amplifier LSI of the optical elements are integrated.
摘要翻译：在制造光学I / O阵列模块时，在衬底上形成具有锥面的镜部分的光波导，凸形或凹形的部件位于光波导，激光二极管阵列和具有凹形或凸形的光电二极管阵列在安装之前与凸形构件或凹形构件配合或配合。此外，形成有多个膜层，其上集成有光学元件的驱动器IC LSI和光学元件的放大器LSI的LSI。

3. 发明授权

US08855160B2 Horizontal-cavity surface-emitting laser 有权
标题翻译：水平腔表面发射激光器
公开(公告)号：US08855160B2
公开(公告)日：2014-10-07
申请号：US13512595
申请日：2010-11-29
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
IPC分类号： H01S5/18 , H01S5/40 , H01S5/022 , H01S5/22 , H01S5/042 , H01S5/12 , H01S5/026
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译：具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1）设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2）位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。

4. 发明授权

US08755423B2 Surface emitting laser module and vertical illuminated photodiode module 失效
标题翻译：表面发射激光模块和垂直照明光电二极管模块
公开(公告)号：US08755423B2
公开(公告)日：2014-06-17
申请号：US12759024
申请日：2010-04-13
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , G02B6/322 , G02B6/4214 , G02B6/423 , H01S5/0207 , H01S5/02212 , H01S5/02284 , H01S5/0267 , H01S5/12 , H01S5/18311
摘要： In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.
摘要翻译：为了提供一种紧凑的光学模块，其允许高效光耦合并且具有高密度封装的部件，包括在光学模块中并相对于半导体衬底的主表面沿垂直方向发光的发光二极管是设置有集成到发光区域中的透镜，以及整合在围绕发光区域的保持部分。因此，升级了将发光二极管发出的光引导的发光二极管与光纤对准的准备状态。最终，可以提供允许高效光耦合并且具有高密度封装的部件的紧凑型光学模块。

5. 发明申请

US20120230361A1 SURFACE EMISSION LASER 有权
标题翻译：表面发射激光
公开(公告)号：US20120230361A1
公开(公告)日：2012-09-13
申请号：US13512595
申请日：2010-11-29
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
IPC分类号： H01S5/18
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译：具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1）设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2）位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。

6. 发明授权

US08303195B2 Optical transceiver module 失效
标题翻译：光收发模块
公开(公告)号：US08303195B2
公开(公告)日：2012-11-06
申请号：US12810442
申请日：2008-12-15
申请人： Koichiro Adachi , Kazuhiko Hosomi , Toshiki Sugawara
发明人： Koichiro Adachi , Kazuhiko Hosomi , Toshiki Sugawara
IPC分类号： G02B6/36 , G02B6/38
CPC分类号： H04B10/40 , G02B6/29367 , G02B6/32 , G02B6/4204 , G02B6/4246 , H01L31/02325 , H01L31/153 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/0267 , H01S5/0687
摘要： The optical module includes an optical device mounting substrate 1 and an optical multiplexer/demultiplexer 2. One laser diode and at least one photodetector, which are positioned in the same plane, are mounted on the optical device mounting substrate 1. The optical multiplexer/demultiplexer is prepared by mounting a wavelength-selective filter and a mirror on the front and back surfaces of a transparent substrate. The optical device mounting substrate and the optical multiplexer/demultiplexer are mounted in a package 3 in such a manner that the optical device mounting surface and the filter surface are not parallel to each other. The optical module also includes a first lens, which is positioned near the laser diode or monolithically integrated with the laser diode, and a second lens, which converges light coming out of the optical multiplexer/demultiplexer toward an optical fiber.
摘要翻译：光学模块包括光学装置安装基板1和光复用器/解复用器2.位于同一平面中的一个激光二极管和至少一个光电检测器安装在光学装置安装基板1上。光复用器/解复用器通过在透明基板的前表面和后表面上安装波长选择性滤光器和反射镜来制备。光学装置安装基板和光复用器/解复用器以光学装置安装表面和滤光器表面彼此不平行的方式安装在封装3中。光学模块还包括位于激光二极管附近或与激光二极管单片集成的第一透镜，以及将从光复用器/解复用器出来的光会聚到光纤的第二透镜。

7. 发明申请

US20100278482A1 Optical Transceiver Module 失效
标题翻译：光收发模块
公开(公告)号：US20100278482A1
公开(公告)日：2010-11-04
申请号：US12810442
申请日：2008-12-15
申请人： Koichiro Adachi , Kazuhiko Hosomi , Toshiki Sugawara
发明人： Koichiro Adachi , Kazuhiko Hosomi , Toshiki Sugawara
IPC分类号： G02B6/32
CPC分类号： H04B10/40 , G02B6/29367 , G02B6/32 , G02B6/4204 , G02B6/4246 , H01L31/02325 , H01L31/153 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/0267 , H01S5/0687
摘要： The optical module includes an optical device mounting substrate 1 and an optical multiplexer/demultiplexer 2. One laser diode and at least one photodetector, which are positioned in the same plane, are mounted on the optical device mounting substrate 1. The optical multiplexer/demultiplexer is prepared by mounting a wavelength-selective filter and a mirror on the front and back surfaces of a transparent substrate. The optical device mounting substrate and the optical multiplexer/demultiplexer are mounted in a package 3 in such a manner that the optical device mounting surface and the filter surface are not parallel to each other. The optical module also includes a first lens, which is positioned near the laser diode or monolithically integrated with the laser diode, and a second lens, which converges light coming out of the optical multiplexer/demultiplexer toward an optical fiber.
摘要翻译：光学模块包括光学装置安装基板1和光复用器/解复用器2.位于同一平面中的一个激光二极管和至少一个光电检测器安装在光学装置安装基板1上。光复用器/解复用器通过在透明基板的前表面和后表面上安装波长选择性滤光器和反射镜来制备。光学装置安装基板和光复用器/解复用器以光学装置安装表面和滤光器表面彼此不平行的方式安装在封装3中。光学模块还包括位于激光二极管附近或与激光二极管单片集成的第一透镜，以及将从光复用器/解复用器出来的光会聚到光纤的第二透镜。

8. 发明授权

US08842855B2 Sound volume control circuit 有权
标题翻译：音量控制电路
公开(公告)号：US08842855B2
公开(公告)日：2014-09-23
申请号：US13343206
申请日：2012-01-04
申请人： Koichiro Adachi
发明人： Koichiro Adachi
IPC分类号： H03G3/00 , H03M1/66 , H03M1/78 , H03F99/00
CPC分类号： H03G1/0088 , H03G3/001
摘要： A sound volume control circuit includes: a first operational amplifier; a variable resistor circuit connected between an output and an inverting input of the first operational amplifier and having a plurality of resistance values; an R-2R ladder circuit connected between a voltage source of an input voltage; and a control circuit controlling the variable resistor circuit and the R-2R ladder circuit; wherein when changing a resistance value of the variable resistor circuit from a first resistance value to a second resistance value, so as to change the output voltage in a step size where a difference between the output voltage corresponding to the first resistance value and the output voltage corresponding to the second resistance value is further segmented, the control circuit changes the magnitude of the electric current flowing to the variable resistor circuit by use of the R-2R ladder circuit.
摘要翻译：音量控制电路包括：第一运算放大器; 连接在所述第一运算放大器的输出和反相输入端之间并具有多个电阻值的可变电阻电路; 连接在输入电压的电压源之间的R-2R梯形电路; 以及控制可变电阻电路和R-2R梯形电路的控制电路; 其中当将所述可变电阻器电路的电阻值从第一电阻值改变为第二电阻值时，以使所述输出电压以与所述第一电阻值相对应的输出电压与所述输出电压之间的差为单位的步长改变对应于第二电阻值进一步分段，控制电路通过使用R-2R梯形电路改变流向可变电阻电路的电流的大小。

9. 发明申请

US20080144683A1 VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER DEVICE 有权
标题翻译：垂直孔表面发射半导体激光器件
公开(公告)号：US20080144683A1
公开(公告)日：2008-06-19
申请号：US11679349
申请日：2007-02-27
申请人： Kouji NAKAHARA , Koichiro Adachi , Takashi Shiota , Tomonobu Tsuchiya , Kazunori Shinoda
发明人： Kouji NAKAHARA , Koichiro Adachi , Takashi Shiota , Tomonobu Tsuchiya , Kazunori Shinoda
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译：其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。

10. 发明申请

US20070241344A1 Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20070241344A1
公开(公告)日：2007-10-18
申请号：US11733229
申请日：2007-04-10
申请人： Koichiro Adachi , Kouji Nakahara , Jun-ichi Kasai , Takeshi Kitatani
发明人： Koichiro Adachi , Kouji Nakahara , Jun-ichi Kasai , Takeshi Kitatani
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L33/06 , H01S5/0014 , H01S5/18311 , H01S5/2213 , H01S5/2231 , H01S5/34306 , H01S5/34353
摘要： For a semiconductor light emitting device using GaInNAs as an active layer, since GaInNAs includes N, the critical thickness is reduced and it is difficult to lengthen the wavelength of a laser beam. A semiconductor light emitting device is prepared, which has an active layer comprising a quantum well layer formed by successively stacking a GaInNAs layer and a GaInAs layer and GaAs barrier layers stacked on both sides of the quantum well layer. The quantum level of the conduction band is present above the conduction band edge of the GaInAs layer.
摘要翻译：对于使用GaInNA作为有源层的半导体发光器件，由于GaInNA包括N，临界厚度减小，并且难以延长激光束的波长。制备半导体发光器件，其具有包括通过连续层叠GaInNA层和GaInAs层而形成的量子阱层的活性层和层叠在量子阱层两侧的GaAs势垒层。导带的量子水平存在于GaInAs层的导带边缘之上。

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