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1. 发明授权

US08755423B2 Surface emitting laser module and vertical illuminated photodiode module 失效
标题翻译：表面发射激光模块和垂直照明光电二极管模块
公开(公告)号：US08755423B2
公开(公告)日：2014-06-17
申请号：US12759024
申请日：2010-04-13
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , G02B6/322 , G02B6/4214 , G02B6/423 , H01S5/0207 , H01S5/02212 , H01S5/02284 , H01S5/0267 , H01S5/12 , H01S5/18311
摘要： In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.
摘要翻译：为了提供一种紧凑的光学模块，其允许高效光耦合并且具有高密度封装的部件，包括在光学模块中并相对于半导体衬底的主表面沿垂直方向发光的发光二极管是设置有集成到发光区域中的透镜，以及整合在围绕发光区域的保持部分。因此，升级了将发光二极管发出的光引导的发光二极管与光纤对准的准备状态。最终，可以提供允许高效光耦合并且具有高密度封装的部件的紧凑型光学模块。

2. 发明申请

US20080285974A1 Optical Multiplexer/Demultiplexer 审中-公开
标题翻译：光复用器/解复用器
公开(公告)号：US20080285974A1
公开(公告)日：2008-11-20
申请号：US12120680
申请日：2008-05-15
申请人： Makoto Takahashi , Yasunobu Matsuoka , Masahiro Aoki
发明人： Makoto Takahashi , Yasunobu Matsuoka , Masahiro Aoki
IPC分类号： H04J14/02
CPC分类号： G02B6/29365 , G02B6/29367 , G02B6/2938 , G02B6/42 , G02B6/4246
摘要： An optical multiplexer/demultiplexer comprising a member, of which first and second opposite planar surfaces are parallel to each other. The member includes therein a void, of which third and fourth opposite planar surfaces are in parallel to each other. An extension of a first line lying on the first planar surface and an extension of a third line lying on the third planar surface intersect each other in a cross section including the void of the member, a smaller one of intersection angles thereof being φ1. An extension of a second line lying on the second planar surface and an extension of a fourth line lying on the fourth planar surface intersect each other, a smaller one of intersection angles thereof being φ1. The third planar surface is provided on a part thereof with at least one high reflection coating film. The fourth planar surface is provided on a part thereof with at least one optical wavelength filter. At least parts of the high reflection coating film and the first optical wavelength filter are opposed to each other. The first optical wavelength filter transmits therethrough light of wavelength λ1 and reflects light of wavelength λ2 (here, wavelength λ1≠wavelength λ2). The member and an interior of the void are different in value of refractive index from each other.
摘要翻译：一种光信号多路复用器/解复用器，包括一第一和第二相对平面彼此平行的部件。该构件包括其中第三和第四相对平面彼此平行的空隙。位于第一平坦表面上的第一线的延伸部和位于第三平坦表面上的第三线的延伸线在包括构件的空隙的横截面中彼此相交，较小的一个相交角为φ1。位于第二平坦表面上的第二线的延伸部和位于第四平坦表面上的第四线的延伸部彼此相交，较小的一个相交角为φ1。第三平面设置在其一部分上与至少一个高反射涂膜。第四平面在其一部分上设置有至少一个光波长滤波器。高反射涂膜和第一光波长滤光片的至少一部分彼此相对。第一光学波长滤波器透过波长为λ1的光并且反射波长λ2的光（这里，波长λ1 <>波长λ2）。空隙的构件和内部的折射率值彼此不同。

3. 发明授权

US08909021B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US08909021B2
公开(公告)日：2014-12-09
申请号：US13521605
申请日：2010-02-01
申请人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
发明人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
IPC分类号： G02B6/00 , G02B6/36 , H01S5/30 , G02F1/225 , H01S5/02 , G02B6/122 , B82Y20/00 , G02B6/12 , G02F1/21 , H01S5/042 , H01S5/32 , H01S5/12
CPC分类号： G02B6/122 , B82Y20/00 , G02B2006/12097 , G02B2006/12178 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/12 , G02F2202/06 , G02F2202/09 , G02F2202/105 , G02F2203/06 , H01S5/021 , H01S5/0424 , H01S5/12 , H01S5/3027 , H01S5/3202
摘要： Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.
摘要翻译：公开了具有小光损耗并且没有偏振依赖性的硅光波导。硅光波导形成在其上具有埋入氧化膜的硅衬底上，硅光波导表面的平面取向为（110）面，侧壁的面取向为（111）面，侧壁的凹部和突起在原子级平坦化。

4. 发明授权

US08680553B2 Light-emitting device, light-receiving device and method of manufacturing the same 有权
标题翻译：发光装置，光接收装置及其制造方法
公开(公告)号：US08680553B2
公开(公告)日：2014-03-25
申请号：US13129115
申请日：2009-10-21
申请人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawara
发明人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawara
IPC分类号： H01L33/34
CPC分类号： H01S5/3201 , H01L31/103 , H01L31/1808 , H01S5/0208 , H01S5/021 , H01S5/026 , H01S5/0264 , H01S5/0424 , H01S5/1032 , H01S5/1231 , H01S5/125 , H01S5/3223 , Y02E10/50
摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
摘要翻译：本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄型半导体层的另一端与以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜。

5. 发明申请

US20120288228A1 OPTICAL ELEMENT 有权
标题翻译：光学元件
公开(公告)号：US20120288228A1
公开(公告)日：2012-11-15
申请号：US13521605
申请日：2010-02-01
申请人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
发明人： Shinichi Saito , Masahiro Aoki , Toshiki Sugawara
IPC分类号： G02B6/12
CPC分类号： G02B6/122 , B82Y20/00 , G02B2006/12097 , G02B2006/12178 , G02F1/218 , G02F1/2257 , G02F2001/212 , G02F2201/12 , G02F2202/06 , G02F2202/09 , G02F2202/105 , G02F2203/06 , H01S5/021 , H01S5/0424 , H01S5/12 , H01S5/3027 , H01S5/3202
摘要： Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.
摘要翻译：公开了具有小光损耗并且没有偏振依赖性的硅光波导。硅光波导形成在其上具有埋入氧化膜的硅衬底上，硅光波导表面的平面取向为（110）面，侧壁的面取向为（111）面，侧壁的凹部和突起在原子级平坦化。

6. 发明授权

US08036533B2 Optical transmitter/receiver module 失效
标题翻译：光发射机/接收机模块
公开(公告)号：US08036533B2
公开(公告)日：2011-10-11
申请号：US12254036
申请日：2008-10-20
申请人： Kazuhiko Hosomi , Misuzu Sagawa , Toshiki Sugawara , Masahiro Aoki
发明人： Kazuhiko Hosomi , Misuzu Sagawa , Toshiki Sugawara , Masahiro Aoki
IPC分类号： H04J14/02
CPC分类号： G02B6/4215 , G02B6/29367 , H04J14/02
摘要： An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.
摘要翻译：准备了将多个发光元件安装在同一平面上的光学元件安装基板，准备从多个发光元件发出的多个光的透镜阵列和波长复用/解复用器件。波长复用/解复用装置通常在透明基板的前面和后面平面上安装波长选择滤光器和反射镜。这三个部件以期望的角度位置安装在包装内。基于发光元件安装基板的厚度和角度确定波长多路复用/解复用装置的各个波长的光轴，并排列在水平面的直线上。结果，如果各个发光元件被布置在专门由设计工作确定的光轴上，则可以执行光复用/解复用操作。

7. 发明申请

US20090103923A1 Optical Transmitter/Receiver Module 失效
标题翻译：光发射机/接收机模块
公开(公告)号：US20090103923A1
公开(公告)日：2009-04-23
申请号：US12254036
申请日：2008-10-20
申请人： Kazuhiko HOSOMI , Misuzu Sagawa , Toshiki Sugawara , Masahiro Aoki
发明人： Kazuhiko HOSOMI , Misuzu Sagawa , Toshiki Sugawara , Masahiro Aoki
IPC分类号： H04J14/02
CPC分类号： G02B6/4215 , G02B6/29367 , H04J14/02
摘要： An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.
摘要翻译：准备了将多个发光元件安装在同一平面上的光学元件安装基板，准备从多个发光元件发出的多个光的透镜阵列和波长复用/解复用器件。波长复用/解复用装置通常在透明基板的前面和后面平面上安装波长选择滤光器和反射镜。这三个部件以期望的角度位置安装在包装内。基于发光元件安装基板的厚度和角度确定波长多路复用/解复用装置的各个波长的光轴，并排列在水平面的直线上。结果，如果各个发光元件被布置在专门由设计工作确定的光轴上，则可以执行光复用/解复用操作。

8. 发明授权

US07636378B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US07636378B2
公开(公告)日：2009-12-22
申请号：US12028127
申请日：2008-02-08
申请人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
发明人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译：在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题一部分。为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。

9. 发明申请

US20120327965A1 SEMICONDUCTOR LASER ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT, AND OPTICAL MODULE 审中-公开
标题翻译：半导体激光元件，制造半导体激光元件的方法和光学模块
公开(公告)号：US20120327965A1
公开(公告)日：2012-12-27
申请号：US13521555
申请日：2010-02-02
申请人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
发明人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
IPC分类号： H01S5/028 , H01S5/024 , H01L21/02
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/0267 , H01S5/187 , H01S5/2081
摘要： In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.
摘要翻译：为了提供具有高可靠性的半导体激光元件或集成光学器件，水平腔半导体激光器或光学模块包括用作腔镜的深钻DBR镜，深冲DBR镜由以下材料组成的材料组成：与衬底晶格匹配，并且具有不吸收从有源层发射的光的带隙能量。

10. 发明申请

US20090129421A1 SEMICONDUCTOR LASER DIODE 有权
标题翻译：半导体激光二极管
公开(公告)号：US20090129421A1
公开(公告)日：2009-05-21
申请号：US12028127
申请日：2008-02-08
申请人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
发明人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
IPC分类号： H01S5/323
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译：在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题一部分。为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。

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