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1. 发明申请

US20170338625A1 SEMICONDUCTOR LASERS AND PROCESSES FOR THE PLANARIZATION OF SEMICONDUCTOR LASERS 审中-公开
公开(公告)号：US20170338625A1
公开(公告)日：2017-11-23
申请号：US15600483
申请日：2017-05-19
申请人： MACOM Technology Solutions Holdings, Inc.
发明人： Ali Badar Alamin DOW , Jason Daniel BOWKER , Malcolm R. GREEN
IPC分类号： H01S5/223 , H01S5/00 , C23C14/30 , H01S5/343 , H01S5/02
CPC分类号： H01S5/2231 , C23C14/30 , H01L21/31051 , H01L21/67098 , H01L21/68 , H01S5/0021 , H01S5/0202 , H01S5/0203 , H01S5/02461 , H01S5/0282 , H01S5/0425 , H01S5/1014 , H01S5/2202 , H01S5/2213 , H01S5/2214 , H01S5/343 , H01S2301/176
摘要： A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

2. 发明授权

US09484495B2 Semiconductor light-emitting element and method for manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US09484495B2
公开(公告)日：2016-11-01
申请号：US14319251
申请日：2014-06-30
申请人： SAE Magnetics (H.K.) Ltd.
发明人： Babu Dayal Padullaparthi
IPC分类号： H01L33/20 , H01S5/00 , H01L33/38 , H01L33/44
CPC分类号： H01L33/20 , H01L33/38 , H01L33/44 , H01L2933/0025 , H01S5/00 , H01S5/06226 , H01S5/18313 , H01S5/18333 , H01S5/18347 , H01S5/2213
摘要： A semiconductor light-emitting element includes: a double-mesa structure of semiconductor formed to have a cylindrical cross section; an insulating member formed to fill a space surrounding the double-mesa structure, with the insulating member comprising a lower insulating member and an upper insulting member covering the lower insulating member; and a first electrode formed on the upper insulating member to come into contact with part of a top surface of the double-mesa structure. The lower insulating member has multiple lower air pillars that are formed in an area aligning with the first electrode, and the upper insulating member has multiple upper air pillars that are formed around the first electrode. It has low dielectric constant and reduced electrical parasitics especially parasitic capacitances, thereby improving high frequency performance and improving modulation speed of light-emitting device finally.
摘要翻译：半导体发光元件包括：形成为具有圆柱形截面的半导体半导体结构; 绝缘构件，形成为填充所述双台面结构周围的空间，所述绝缘构件包括下绝缘构件和覆盖所述下绝缘构件的上绝缘构件; 以及形成在所述上绝缘构件上以与所述双台面结构的顶表面的一部分接触的第一电极。下绝缘构件具有形成在与第一电极对准的区域中的多个下空气柱，并且上绝缘构件具有形成在第一电极周围的多个上空气柱。它具有低介电常数和降低的电寄生特性，特别是寄生电容，从而最终提高了高频性能，提高了发光器件的调制速度。

3. 发明申请

US20150110144A1 DISTRIBUTED FEEDBACK-LASER DIODES 审中-公开
标题翻译：分布式反馈激光二极管
公开(公告)号：US20150110144A1
公开(公告)日：2015-04-23
申请号：US14570975
申请日：2014-12-15
申请人： Electronics and Telecommunications Research Institute
发明人： Oh Kee KWON , Su Hwan OH , Young Ahn LEEM , O-Kyun KWON , Young-Tak HAN , Yongsoon BAEK , Yun C. CHUNG
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/1225 , H01S5/1243 , H01S5/2213 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/34306
摘要： A distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
摘要翻译：分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层，第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

4. 发明授权

US08937980B2 Distributed feedback-laser diodes 有权
标题翻译：分布式反馈激光二极管
公开(公告)号：US08937980B2
公开(公告)日：2015-01-20
申请号：US13614280
申请日：2012-09-13
申请人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
发明人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/1225 , H01S5/1243 , H01S5/2213 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/34306
摘要： Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
摘要翻译：提供分布式反馈激光二极管。分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层，第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

5. 发明授权

US08873598B2 Waveguide-type optical semiconductor device 有权
标题翻译：波导型光半导体器件
公开(公告)号：US08873598B2
公开(公告)日：2014-10-28
申请号：US13741660
申请日：2013-01-15
申请人： Sumitomo Electric Industries, Ltd.
发明人： Yoshihiro Yoneda , Hirohiko Kobayashi , Ryuji Masuyama
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S5/343 , H01S5/32
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/2213 , H01S5/2214 , H01S5/2275 , H01S5/3201 , H01S5/34306 , H01S2301/176
摘要： A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction.
摘要翻译：波导型光学半导体器件包括具有主表面的衬底; 包括堆叠半导体层的结构，所述堆叠半导体层包括设置在所述基板的主表面上的芯层，沿与所述主表面正交并沿与所述主表面平行的第二方向延伸的第一方向突出的条状台面部，一对条形槽，限定所述条形台面部分并沿所述第二方向延伸; 设置在所述一对条状槽中的突起，所述突起从所述结构沿所述第一方向突出; 以及覆盖突起的侧面的树脂部分，树脂部分被埋在条形槽中。突起相对于结构的相对位置是固定的。此外，当从第一方向观察时，突起的侧面与第二方向相交。

6. 发明申请

US20130177037A1 SEMICONDUCTOR INTEGRATED DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体集成器件及其制造方法
公开(公告)号：US20130177037A1
公开(公告)日：2013-07-11
申请号：US13733264
申请日：2013-01-03
申请人： Sumitomo Electric Industries, Ltd.
发明人： Hideki YAGI
IPC分类号： H01S5/30
CPC分类号： H01S5/3013 , B82Y20/00 , G02B6/12004 , H01S5/026 , H01S5/0265 , H01S5/1017 , H01S5/1032 , H01S5/12 , H01S5/2213 , H01S5/2224 , H01S5/2275 , H01S5/3213 , H01S5/34306
摘要： A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material.
摘要翻译：半导体集成器件包括：第一下台面的发光部，设置在第一下台面的侧面的第一下掩埋层，设置在第一下台面的第一上台面;以及第一上掩埋层，在第一上台面的侧面上; 以及包括第二下台面的光调制器部分，设置在第二下台面的侧表面上的第二下掩埋层，设置在第二下台面上方的第二上台面，以及设置在第二下台面的侧表面上的第二上掩埋层第二个上部台面第一和第二下台面包括彼此光耦合的第一和第二芯层。第一和第二下埋层由半绝缘半导体构成。第一和第二上埋层由树脂材料构成。

7. 发明申请

US20110164642A1 LASER DIODE WITH RIDGE WAVEGUIDE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有波导结构的激光二极管及其制造方法
公开(公告)号：US20110164642A1
公开(公告)日：2011-07-07
申请号：US12971476
申请日：2010-12-17
申请人： Yutaka ONISHI , Hideki Yagi
发明人： Yutaka ONISHI , Hideki Yagi
IPC分类号： H01S5/22 , H01L21/56
CPC分类号： H01S5/22 , H01S5/02461 , H01S5/0425 , H01S5/12 , H01S5/2009 , H01S5/2081 , H01S5/2213 , H01S5/2231 , H01S2301/176
摘要： An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge waveguide structure on the core region that extends in a direction along which the light generated in the active layer is guided. The ridge waveguide structure is buried by a thick resin layer in both sides thereof, but the resin layer is removed in the edge regions close to respective facets of the LD.
摘要翻译：公开了一种在边缘区域具有改善的散热功能的LD。 LD提供包括有源层并延伸整个基板的芯区域，以及沿着在有源层中产生的光被引导的方向延伸的芯区域上的脊波导结构。脊形波导结构在其两侧被厚树脂层掩埋，但是在靠近LD的各个面的边缘区域中除去树脂层。

8. 发明申请

US20100303115A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE 有权
标题翻译：制造半导体激光二极管的方法
公开(公告)号：US20100303115A1
公开(公告)日：2010-12-02
申请号：US12785860
申请日：2010-05-24
申请人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
发明人： Hideki Yagi , Kenji Koyama , Hiroyuki Yoshinaga , Kuniaki Ishihara
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/12 , H01S5/2086 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2222 , H01S5/2275 , H01S2301/176
摘要： A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.
摘要翻译：公开了一种制造LD的方法。 LD具有包括光学有源区域的条纹结构。条状结构被树脂掩埋，通常是苯并环丁烯（BCB）。在BCB层中形成开口的方法具有RIE的三步蚀刻。第一步通过CF4和O2的混合气体部分地蚀刻BCB层，其中CF4具有第一分压，第二步通过CF4和O2的混合气体蚀刻在BCB层的顶部上形成的光致抗蚀剂，其中CF4 在该步骤中具有小于第一分压的第二分压，第三步骤通过CF4和O2的混合气体蚀刻第一步中留下的BCB，其中该步骤中的CF 4具有大于第二分压的第三分压。

9. 发明申请

US20100164636A1 OSCILLATION DEVICE 有权
标题翻译：振荡器件
公开(公告)号：US20100164636A1
公开(公告)日：2010-07-01
申请号：US12091393
申请日：2007-12-20
申请人： Ryota Sekiguchi , Toshihiko Ouchi
发明人： Ryota Sekiguchi , Toshihiko Ouchi
IPC分类号： H03B7/08
CPC分类号： H01S1/02 , B82Y20/00 , H01S5/06255 , H01S5/06256 , H01S5/2213 , H01S5/227 , H01S5/3027 , H01S5/3031 , H01S5/3402 , H01S5/3422
摘要： To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.
摘要翻译：为了提供具有波长可变宽度相对宽并且波长扫描速率相对较高的长振荡波长的振荡器件。振荡装置包括具有相对于待振荡的电磁波的增益的增益介质，用于谐振电磁波的腔体结构以及能量注入装置，并将泵浦能量注入到增益介质中。增益介质夹在第一负介电常数介质和第二介电常数介质之间，其中相对于电磁波的介电常数的实部为负。提供电场施加装置用于第一负介电常数介质和第二负介电常数介质中的至少一个，以施加用于改变形成在增益介质的边界部分处的耗尽区的电场。

10. 发明授权

US07713856B2 Power semiconductor laser with low divergence and low astigmatism, and method for the production thereof 有权
标题翻译：具有低发散度和低散光的功率半导体激光器及其制造方法
公开(公告)号：US07713856B2
公开(公告)日：2010-05-11
申请号：US11722662
申请日：2005-12-16
申请人： Michel Krakowski , Michel Calligaro
发明人： Michel Krakowski , Michel Calligaro
IPC分类号： H01L21/44
CPC分类号： H01S5/2231 , H01S5/1014 , H01S5/2063 , H01S5/2213 , H01S5/4031
摘要： The present invention relates to a high-power semiconductor laser having low divergence and low astigmatism, this laser being including, in an active layer, a first part in the form of a narrow monomode stripe with transverse index guiding terminating in a second part flaring out from the first part, also with transverse index guiding.
摘要翻译：本发明涉及具有低发散度和低散光的大功率半导体激光器，该激光器在有源层中包括形式为窄单模条纹的第一部分，横向折射率引导终止于第二部分扩散从第一部分，还有横向指标指导。

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