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1. 发明申请

US20060223287A1 Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device 有权
标题翻译：形成低温生长缓冲层的方法，发光元件，制造方法和发光器件
公开(公告)号：US20060223287A1
公开(公告)日：2006-10-05
申请号：US11393808
申请日：2006-03-31
申请人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Garcia Villora , Kiyoshi Shimamura
发明人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Garcia Villora , Kiyoshi Shimamura
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译：一种形成低温生长缓冲层的方法，其具有以下步骤：将Ga 2 N 3 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2 O 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。并在缓冲层生长条件下将具有TMG，TMA和NH 3的两种或多种的源气体供应到Ga 2 O 3 N 3衬底上以在Ga 2 N 3 O 3衬底上形成低温生长的缓冲层。

2. 发明授权

US07524741B2 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device 有权
标题翻译：形成低温生长缓冲层的方法，发光元件及其制造方法以及发光器件
公开(公告)号：US07524741B2
公开(公告)日：2009-04-28
申请号：US11393808
申请日：2006-03-31
申请人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
发明人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译：一种形成低温生长缓冲层的方法，具有以下步骤：将Ga 2 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。并在缓冲层生长条件下将具有TMG，TMA和NH3两种以上的源气体供给到Ga 2 O 3衬底上，以在Ga 2 O 3衬底上形成低温生长缓冲层。

3. 发明申请

US20070131951A1 Light-emitting element and making method thereof 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：US20070131951A1
公开(公告)日：2007-06-14
申请号：US11634381
申请日：2006-12-06
申请人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki
发明人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L25/167 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/00014
摘要： A light-emitting element having: a gallium oxide substrate on a front surface of which a crystal of a semiconductor material having a light-emitting element part is grown; and a substrate protection layer formed on a back surface of the gallium oxide substrate. A method of making a light-emitting element having the steps of: forming a substrate protection layer on a back surface of a gallium oxide substrate; growing a crystal of a semiconductor material having a light-emitting element part on a front surface of the gallium oxide substrate; and assembling the light-emitting element so as to form a electrical connection for the light-emitting element part.
摘要翻译：一种发光元件，其具有：在前表面上生长具有发光元件部分的半导体材料的晶体的氧化镓衬底; 以及形成在氧化镓衬底的背面上的衬底保护层。一种制造发光元件的方法，具有以下步骤：在氧化镓衬底的背面上形成衬底保护层; 在所述氧化镓衬底的前表面上生长具有发光元件部分的半导体材料的晶体; 并且组装发光元件以形成用于发光元件部分的电连接。

4. 发明申请

US20070134833A1 Semiconductor element and method of making same 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20070134833A1
公开(公告)日：2007-06-14
申请号：US11636709
申请日：2006-12-11
申请人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
发明人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/02414 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/02658 , H01L21/02664 , H01L21/78
摘要： A method of making a semiconductor element which has a substrate formed of gallium oxide and a semiconductor layer formed on the substrate. The method has: a first dividing step that the substrate with the semiconductor layer formed thereon is divided into a strip bar along a first cleaved surface of the substrate; and a second dividing step that the strip bar is divided in a direction perpendicular to the first cleaved surface.
摘要翻译：一种制造半导体元件的方法，该半导体元件具有由氧化镓形成的衬底和形成在衬底上的半导体层。该方法具有：将其上形成有半导体层的基板沿着基板的第一切割面分割成条状条的第一分割步骤; 以及第二分割步骤，所述条形条沿垂直于所述第一解理面的方向分割。

5. 发明申请

US20100270548A1 Semiconductor element and method of making same 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20100270548A1
公开(公告)日：2010-10-28
申请号：US12801974
申请日：2010-07-06
申请人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
发明人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
IPC分类号： H01L29/12
CPC分类号： H01L33/0095 , H01L21/02414 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/02658 , H01L21/02664 , H01L21/78
摘要： A semiconductor element includes a substrate including gallium oxide and having a predetermined plane direction, and a semiconductor layer formed on the substrate, in which, the semiconductor element is in chip form and further includes a first end face formed along a cleaved surface of the substrate and a second end face formed perpendicular to the first end face, wherein the first end face has a stronger cleavage property than the second end face.
摘要翻译：半导体元件包括包含氧化镓并具有预定平面方向的衬底以及形成在衬底上的半导体层，其中半导体元件是芯片形式的，并且还包括沿衬底的切割表面形成的第一端面以及垂直于第一端面形成的第二端面，其中第一端面具有比第二端面更强的切割性能。

6. 发明授权

US07572652B2 Light emitting element and production method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07572652B2
公开(公告)日：2009-08-11
申请号：US11708683
申请日：2007-02-21
申请人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
发明人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.
摘要翻译：一种发光元件，具有由III族氮化物系化合物半导体形成并具有发光层的发光元件部。发光元件部分是通过在发光元件部分在衬底上生长之后通过湿法蚀刻来剥离衬底而形成的。发光元件部分具有剥离表面，其在将发光元件部分生长在基板上时形成为基本保持不变。

7. 发明申请

US20070210320A1 Light emitting element and production method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20070210320A1
公开(公告)日：2007-09-13
申请号：US11708683
申请日：2007-02-21
申请人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
发明人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.
摘要翻译：一种发光元件，具有由III族氮化物系化合物半导体形成并具有发光层的发光元件部。发光元件部分是通过在发光元件部分在衬底上生长之后通过湿法蚀刻来剥离衬底而形成的。发光元件部分具有剥离表面，其在将发光元件部分生长在基板上时形成为基本保持不变。

8. 发明授权

US07981744B2 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth 有权
标题翻译：场效应晶体管，半导体器件，它们的制造方法以及半导体晶体生长方法
公开(公告)号：US07981744B2
公开(公告)日：2011-07-19
申请号：US11578965
申请日：2005-06-09
申请人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
发明人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

9. 发明申请

US20090155580A1 Production Methods of Semiconductor Crystal and Semiconductor Substrate 审中-公开
标题翻译：半导体晶体和半导体基板的生产方法
公开(公告)号：US20090155580A1
公开(公告)日：2009-06-18
申请号：US12225389
申请日：2007-04-05
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/02 , B32B9/00 , B32B1/00
CPC分类号： C30B29/403 , C30B9/00 , H01L33/0075 , Y10T428/265 , Y10T428/266
摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.
摘要翻译：提供适合于制造电子器件或光学器件的高品质的半导体衬底。本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

10. 发明申请

US20100301358A1 Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor 有权
标题翻译：半导体基板，电子器件，光学器件及其制造方法
公开(公告)号：US20100301358A1
公开(公告)日：2010-12-02
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L29/20 , C30B9/12 , H01L29/772 , H01L33/30 , H01L31/0304 , H01L21/20
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

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