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1. 发明授权

US07750351B2 Epitaxial substrate for field effect transistor 有权
标题翻译：场效晶体管的外延衬底
公开(公告)号：US07750351B2
公开(公告)日：2010-07-06
申请号：US11386844
申请日：2006-03-23
申请人： Hiroyuki Sazawa , Koji Hirata , Masayoshi Kosaki , Hajime Okumura
发明人： Hiroyuki Sazawa , Koji Hirata , Masayoshi Kosaki , Hajime Okumura
IPC分类号： H01L23/29 , H01L21/04
CPC分类号： H01L29/7787 , H01L29/66462 , Y10S438/931
摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.
摘要翻译：一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

2. 发明申请

US20070069239A1 Electronic device containing group-III elements based nitride semiconductors 失效
标题翻译：含有基于III族元素的氮化物半导体的电子器件
公开(公告)号：US20070069239A1
公开(公告)日：2007-03-29
申请号：US11523740
申请日：2006-09-20
申请人： Masayoshi Kosaki , Koji Hirata
发明人： Masayoshi Kosaki , Koji Hirata
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/12 , H01L33/16
摘要： An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlxGa1-xN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlyGa1-yN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0
摘要翻译：电子装置包括：基板; 设置在所述衬底上的单晶第一缓冲层，其包含由式Al x Ga 1-x N表示的半导体; 设置在第一缓冲层上的非单晶第二缓冲层，含有由式Al 1 Ga 1-y N表示的半导体; 以及设置在第二缓冲层上的含有GaN的未掺杂的基底层，其中0

3. 发明授权

US07432538B2 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US07432538B2
公开(公告)日：2008-10-07
申请号：US11523095
申请日：2006-09-19
申请人： Masayoshi Kosaki , Koji Hirata
发明人： Masayoshi Kosaki , Koji Hirata
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlxGa1-xN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlxGa1-xN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.
摘要翻译：场效应晶体管包括具有通道的沟道层和载流子供应层，该沟道层设置在沟道层上，该沟道层包含由式Al x Ga 1-x N，其中x大于0.04且小于0.45。通道形成在沟道层和载流子供应层之间的界面附近，或者耗尽，载流子供应层的带隙能量大于沟道层的带隙能量，并且公式A1 x x 随着与界面的距离的增加，Ga 1-x N单调减小。沟道层可以是氮化镓的结晶。通道层可以是未掺杂的。载体供给层的式Al x Ga 1-x N的X在界面处大于或等于0.15且小于或等于0.40。

4. 发明申请

US20070278532A1 Field-Effect Transistor, Semiconductor Device, a Method for Manufacturing Them, and a Method of Semiconductor Crystal Growth 有权
标题翻译：场效应晶体管，半导体器件，其制造方法以及半导体晶体生长的方法
公开(公告)号：US20070278532A1
公开(公告)日：2007-12-06
申请号：US11578965
申请日：2005-06-09
申请人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
发明人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
IPC分类号： H01L29/778 , H01L21/335 , H01L21/338 , H01L29/812 , H01L21/36
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

5. 发明申请

US20110306190A1 Method for producing n-type Group III nitride semicondutor 有权
标题翻译：生产n型III族氮化物半导体的方法
公开(公告)号：US20110306190A1
公开(公告)日：2011-12-15
申请号：US13067549
申请日：2011-06-08
申请人： Masayoshi Kosaki , Hiroshi Miwa
发明人： Masayoshi Kosaki , Hiroshi Miwa
IPC分类号： H01L21/205 , B82Y40/00
CPC分类号： H01L21/0242 , B82Y10/00 , B82Y40/00 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02658
摘要： The present invention provides a method for producing an n-type Group III nitride semiconductor product having a high Si concentration and exhibiting favorable crystallinity. In the production method, specifically, an AlN buffer layer is formed on a sapphire substrate by MOCVD, and then a first layer (thickness: 2 μm) is formed from undoped GaN on the buffer layer by MOCVD at 1,140° C. Subsequently, a second layer (thickness: 200 nm) is formed from SiO2 on the first layer by plasma CVD, and then the second layer is removed by use of BHF (buffered hydrofluoric acid). Next, a GaN layer (thickness: 50 nm) is grown, by MOCVD at 1,140° C., on the first layer exposed by removal of the second layer without supply of an n-type dopant gas. Thus, on the first layer is provided a third layer formed of n-type GaN doped with Si at a high concentration and exhibiting favorable crystallinity.
摘要翻译：本发明提供一种具有高Si浓度并具有良好结晶性的n型III族氮化物半导体产品的制造方法。在制造方法中，具体而言，通过MOCVD在蓝宝石基板上形成AlN缓冲层，然后通过MOCVD在1140℃在缓冲层上由未掺杂的GaN形成第一层（厚度：2μm）。随后，通过等离子体CVD在第一层上由SiO 2形成第二层（厚度：200nm），然后通过使用BHF（缓冲氢氟酸）除去第二层。接下来，通过在1140℃下的MOCVD生长GaN层（厚度：50nm），在不提供n型掺杂气体的情况下，通过去除第二层而暴露的第一层上。因此，在第一层上提供由掺杂有高浓度的Si并且具有良好结晶度的n型GaN形成的第三层。

6. 发明授权

US07554132B2 Electronic device containing group-III element based nitride semiconductors 失效
标题翻译：含有III族元素的氮化物半导体的电子器件
公开(公告)号：US07554132B2
公开(公告)日：2009-06-30
申请号：US11523740
申请日：2006-09-20
申请人： Masayoshi Kosaki , Koji Hirata
发明人： Masayoshi Kosaki , Koji Hirata
IPC分类号： H01L31/072
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/12 , H01L33/16
摘要： An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlxGa1−xN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlyGa1−yN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0
摘要翻译：电子装置包括：基板; 设置在所述基板上的含有由式Al x Ga 1-x N表示的半导体的单晶第一缓冲层; 设置在第一缓冲层上的含有由式Al y Ga 1-y N表示的半导体的非单晶第二缓冲层; 以及设置在第二缓冲层上的含有GaN的未掺杂的基底层，其中0

7. 发明申请

US20070063220A1 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US20070063220A1
公开(公告)日：2007-03-22
申请号：US11523095
申请日：2006-09-19
申请人： Masayoshi Kosaki , Koji Hirata
发明人： Masayoshi Kosaki , Koji Hirata
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlxGa1-xN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlxGa1-xN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.
摘要翻译：场效应晶体管包括具有通道的沟道层和载流子供应层，该沟道层设置在沟道层上，该沟道层包含由式Al x Ga 1-x N，其中x大于0.04且小于0.45。通道形成在沟道层和载流子供应层之间的界面附近，或者耗尽，载流子供应层的带隙能量大于沟道层的带隙能量，并且公式A1 x x 随着与界面的距离的增加，Ga 1-x N单调减小。沟道层可以是氮化镓的结晶。通道层可以是未掺杂的。载体供给层的式Al x Ga 1-x N的X在界面处大于或等于0.15且小于或等于0.40。

8. 发明授权

US08420516B2 Method for producing n-type group III nitride semiconductor 有权
标题翻译：制造n型III族氮化物半导体的方法
公开(公告)号：US08420516B2
公开(公告)日：2013-04-16
申请号：US13067549
申请日：2011-06-08
申请人： Masayoshi Kosaki , Hiroshi Miwa
发明人： Masayoshi Kosaki , Hiroshi Miwa
IPC分类号： H01L21/311
CPC分类号： H01L21/0242 , B82Y10/00 , B82Y40/00 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02658
摘要： The present invention provides a method for producing an n-type Group III nitride semiconductor product having a high Si concentration and exhibiting favorable crystallinity. In the production method, specifically, an AlN buffer layer is formed on a sapphire substrate by MOCVD, and then a first layer (thickness: 2 μm) is formed from undoped GaN on the buffer layer by MOCVD at 1,140° C. Subsequently, a second layer (thickness: 200 nm) is formed from SiO2 on the first layer by plasma CVD, and then the second layer is removed by use of BHF (buffered hydrofluoric acid). Next, a GaN layer (thickness: 50 nm) is grown, by MOCVD at 1,140° C., on the first layer exposed by removal of the second layer without supply of an n-type dopant gas. Thus, on the first layer is provided a third layer formed of n-type GaN doped with Si at a high concentration and exhibiting favorable crystallinity.
摘要翻译：本发明提供一种具有高Si浓度并具有良好结晶性的n型III族氮化物半导体产品的制造方法。在制造方法中，具体而言，通过MOCVD在蓝宝石基板上形成AlN缓冲层，然后通过MOCVD在1140℃在缓冲层上由未掺杂的GaN形成第一层（厚度：2μm）。随后，通过等离子体CVD在第一层上由SiO 2形成第二层（厚度：200nm），然后通过使用BHF（缓冲氢氟酸）除去第二层。接下来，通过在1140℃下的MOCVD生长GaN层（厚度：50nm），在不提供n型掺杂气体的情况下，通过去除第二层而暴露的第一层上。因此，在第一层上提供由掺杂有高浓度的Si并且具有良好结晶度的n型GaN形成的第三层。

9. 发明申请

US20070069253A1 Epitaxial substrate for field effect transistor 有权
标题翻译：场效晶体管的外延衬底
公开(公告)号：US20070069253A1
公开(公告)日：2007-03-29
申请号：US11386844
申请日：2006-03-23
申请人： Hiroyuki Sazawa , Koji Hirata , Masayoshi Kosaki , Hajime Okumura
发明人： Hiroyuki Sazawa , Koji Hirata , Masayoshi Kosaki , Hajime Okumura
IPC分类号： H01L29/80
CPC分类号： H01L29/7787 , H01L29/66462 , Y10S438/931
摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.
摘要翻译：一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

10. 发明授权

US07981744B2 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth 有权
标题翻译：场效应晶体管，半导体器件，它们的制造方法以及半导体晶体生长方法
公开(公告)号：US07981744B2
公开(公告)日：2011-07-19
申请号：US11578965
申请日：2005-06-09
申请人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
发明人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

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