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1. 发明申请

US20060223287A1 Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device 有权
标题翻译：形成低温生长缓冲层的方法，发光元件，制造方法和发光器件
公开(公告)号：US20060223287A1
公开(公告)日：2006-10-05
申请号：US11393808
申请日：2006-03-31
申请人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Garcia Villora , Kiyoshi Shimamura
发明人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Garcia Villora , Kiyoshi Shimamura
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译：一种形成低温生长缓冲层的方法，其具有以下步骤：将Ga 2 N 3 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2 O 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。并在缓冲层生长条件下将具有TMG，TMA和NH 3的两种或多种的源气体供应到Ga 2 O 3 N 3衬底上以在Ga 2 N 3 O 3衬底上形成低温生长的缓冲层。

2. 发明授权

US07524741B2 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device 有权
标题翻译：形成低温生长缓冲层的方法，发光元件及其制造方法以及发光器件
公开(公告)号：US07524741B2
公开(公告)日：2009-04-28
申请号：US11393808
申请日：2006-03-31
申请人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
发明人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译：一种形成低温生长缓冲层的方法，具有以下步骤：将Ga 2 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。并在缓冲层生长条件下将具有TMG，TMA和NH3两种以上的源气体供给到Ga 2 O 3衬底上，以在Ga 2 O 3衬底上形成低温生长缓冲层。

3. 发明申请

US20070134833A1 Semiconductor element and method of making same 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20070134833A1
公开(公告)日：2007-06-14
申请号：US11636709
申请日：2006-12-11
申请人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
发明人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/02414 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/02658 , H01L21/02664 , H01L21/78
摘要： A method of making a semiconductor element which has a substrate formed of gallium oxide and a semiconductor layer formed on the substrate. The method has: a first dividing step that the substrate with the semiconductor layer formed thereon is divided into a strip bar along a first cleaved surface of the substrate; and a second dividing step that the strip bar is divided in a direction perpendicular to the first cleaved surface.
摘要翻译：一种制造半导体元件的方法，该半导体元件具有由氧化镓形成的衬底和形成在衬底上的半导体层。该方法具有：将其上形成有半导体层的基板沿着基板的第一切割面分割成条状条的第一分割步骤; 以及第二分割步骤，所述条形条沿垂直于所述第一解理面的方向分割。

4. 发明申请

US20070131951A1 Light-emitting element and making method thereof 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：US20070131951A1
公开(公告)日：2007-06-14
申请号：US11634381
申请日：2006-12-06
申请人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki
发明人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L25/167 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/00014
摘要： A light-emitting element having: a gallium oxide substrate on a front surface of which a crystal of a semiconductor material having a light-emitting element part is grown; and a substrate protection layer formed on a back surface of the gallium oxide substrate. A method of making a light-emitting element having the steps of: forming a substrate protection layer on a back surface of a gallium oxide substrate; growing a crystal of a semiconductor material having a light-emitting element part on a front surface of the gallium oxide substrate; and assembling the light-emitting element so as to form a electrical connection for the light-emitting element part.
摘要翻译：一种发光元件，其具有：在前表面上生长具有发光元件部分的半导体材料的晶体的氧化镓衬底; 以及形成在氧化镓衬底的背面上的衬底保护层。一种制造发光元件的方法，具有以下步骤：在氧化镓衬底的背面上形成衬底保护层; 在所述氧化镓衬底的前表面上生长具有发光元件部分的半导体材料的晶体; 并且组装发光元件以形成用于发光元件部分的电连接。

5. 发明申请

US20100270548A1 Semiconductor element and method of making same 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20100270548A1
公开(公告)日：2010-10-28
申请号：US12801974
申请日：2010-07-06
申请人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
发明人： Yuhei Ikemoto , Koji Hirata , Kazuo Aoki , Yukio Kaneko , Takekazu Ujiie
IPC分类号： H01L29/12
CPC分类号： H01L33/0095 , H01L21/02414 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/02658 , H01L21/02664 , H01L21/78
摘要： A semiconductor element includes a substrate including gallium oxide and having a predetermined plane direction, and a semiconductor layer formed on the substrate, in which, the semiconductor element is in chip form and further includes a first end face formed along a cleaved surface of the substrate and a second end face formed perpendicular to the first end face, wherein the first end face has a stronger cleavage property than the second end face.
摘要翻译：半导体元件包括包含氧化镓并具有预定平面方向的衬底以及形成在衬底上的半导体层，其中半导体元件是芯片形式的，并且还包括沿衬底的切割表面形成的第一端面以及垂直于第一端面形成的第二端面，其中第一端面具有比第二端面更强的切割性能。

6. 发明授权

US07572652B2 Light emitting element and production method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07572652B2
公开(公告)日：2009-08-11
申请号：US11708683
申请日：2007-02-21
申请人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
发明人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.
摘要翻译：一种发光元件，具有由III族氮化物系化合物半导体形成并具有发光层的发光元件部。发光元件部分是通过在发光元件部分在衬底上生长之后通过湿法蚀刻来剥离衬底而形成的。发光元件部分具有剥离表面，其在将发光元件部分生长在基板上时形成为基本保持不变。

7. 发明申请

US20070210320A1 Light emitting element and production method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20070210320A1
公开(公告)日：2007-09-13
申请号：US11708683
申请日：2007-02-21
申请人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
发明人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.
摘要翻译：一种发光元件，具有由III族氮化物系化合物半导体形成并具有发光层的发光元件部。发光元件部分是通过在发光元件部分在衬底上生长之后通过湿法蚀刻来剥离衬底而形成的。发光元件部分具有剥离表面，其在将发光元件部分生长在基板上时形成为基本保持不变。

8. 发明申请

US20110303938A1 Group III nitride semiconductor light-emitting element 审中-公开
标题翻译： III族氮化物半导体发光元件
公开(公告)号：US20110303938A1
公开(公告)日：2011-12-15
申请号：US12926837
申请日：2010-12-13
申请人： Toshiya Uemura , Naoki Arazoe , Yuhei Ikemoto
发明人： Toshiya Uemura , Naoki Arazoe , Yuhei Ikemoto
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/22 , H01L2933/0091
摘要： A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of the groove is slanted such that a cross-section in an element surface direction is decreased toward the n-type layer from the p-type layer. Fine irregularities are formed on the surface at the side joining to an n-electrode of the n-type layer, except for a region on which the n-electrode is formed, and a translucent insulating film having a refractive index of from 1.5 to 2.3 is formed on the fine irregularities. Light extraction efficiency is improved by reflection of light to the n-type layer side by the groove and prevention of reflection to the n-type layer side by the insulating film.
摘要翻译：提供了具有提高光提取效率的III族氮化物半导体发光元件。发光元件在与p型层的p电极接合的一侧的表面上形成有多个点状槽。凹槽的深度达到n型层。凹槽的侧表面倾斜，使得元件表面方向的横截面从p型层向n型层减小。除了形成有n电极的区域以外，在与n型层的n电极接合的一侧的表面上形成微细凹凸，以及折射率为1.5〜2.3的半透明绝缘膜形成在细微的不规则上。通过由凹槽向n型层侧反射光并防止通过绝缘膜向n型层侧反射而提高光提取效率。

9. 发明授权

US07576363B2 Group III nitride compound semiconductor light emitting device 有权
标题翻译： III族氮化物化合物半导体发光器件
公开(公告)号：US07576363B2
公开(公告)日：2009-08-18
申请号：US11245448
申请日：2005-10-07
申请人： Toshiya Uemura , Katsuhisa Sawazaki , Masahito Nakai , Yuhei Ikemoto
发明人： Toshiya Uemura , Katsuhisa Sawazaki , Masahito Nakai , Yuhei Ikemoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/025 , H01L33/06
摘要： In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.
摘要翻译：在包括n型半导体层的III族氮化物化合物半导体发光器件中，具有超晶格结构的p型半导体层，其中至少包含Al的第一层和与第一层不同的组成的第二层层，并且插入在n型半导体层和p型半导体层之间的有源层，其中最靠近有源层的第一层的Al组成设置为低于每个并且其中最靠近有源层的第一层中的p型杂质的掺杂量被设定为小于其它第一层的p型杂质的掺杂量，或非掺杂

10. 发明申请

US20090001384A1 Group III Nitride semiconductor HFET and method for producing the same 审中-公开
标题翻译： III族氮化物半导体HFET及其制造方法
公开(公告)号：US20090001384A1
公开(公告)日：2009-01-01
申请号：US12213882
申请日：2008-06-25
申请人： Masayoshi Kosaki , Yuhei Ikemoto , Takahiro Sonoyama , Hiroshi Miwa
发明人： Masayoshi Kosaki , Yuhei Ikemoto , Takahiro Sonoyama , Hiroshi Miwa
IPC分类号： H01L29/778 , H01L21/388
CPC分类号： H01L29/7787 , H01L29/2003
摘要： Provided is an HFET exhibiting reduced buffer leakage current. The HFET of the present invention includes an SiC substrate, an AlN layer, a graded AlGaN layer, a GaN layer, an AlGaN layer (Al compositional proportion: 20%), a source electrode, a gate electrode, and a drain electrode, wherein the AlN layer, the graded AlGaN layer, the GaN layer, and the AlGaN (Al: 20%) layer are successively stacked on the substrate, and the electrodes are formed on the AlGaN (Al: 20%) layer so as to be separated from one another. In the graded AlGaN layer, the Al compositional proportion gradually decreases from 30% (at the side facing the AlN layer) to 5% (at the side facing the GaN layer). Provision of the graded AlGaN layer reduces strain between the AlN layer and the GaN layer. Therefore, the HFET exhibits reduced buffer leakage current.
摘要翻译：提供了具有减小的缓冲器漏电流的HFET。本发明的HFET包括SiC衬底，AlN层，梯度AlGaN层，GaN层，AlGaN层（Al组成比例：20％），源电极，栅电极和漏电极，其中 AlN层，梯度AlGaN层，GaN层和AlGaN（Al:20％）层依次层叠在基板上，并且在AlGaN（Al:20％）层上形成电极以分离从彼此。在梯度AlGaN层中，Al组成比例从30％（在面向AlN层的一侧）逐渐降低到5％（在面向GaN层的一侧）。提供梯度AlGaN层减少AlN层和GaN层之间的应变。因此，HFET表现出减小的缓冲器漏电流。

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