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1. 发明授权

US07524741B2 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device 有权
标题翻译：形成低温生长缓冲层的方法，发光元件及其制造方法以及发光器件
公开(公告)号：US07524741B2
公开(公告)日：2009-04-28
申请号：US11393808
申请日：2006-03-31
申请人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
发明人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译：一种形成低温生长缓冲层的方法，具有以下步骤：将Ga 2 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。并在缓冲层生长条件下将具有TMG，TMA和NH3两种以上的源气体供给到Ga 2 O 3衬底上，以在Ga 2 O 3衬底上形成低温生长缓冲层。

2. 发明申请

US20060223287A1 Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device 有权
标题翻译：形成低温生长缓冲层的方法，发光元件，制造方法和发光器件
公开(公告)号：US20060223287A1
公开(公告)日：2006-10-05
申请号：US11393808
申请日：2006-03-31
申请人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Garcia Villora , Kiyoshi Shimamura
发明人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Garcia Villora , Kiyoshi Shimamura
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译：一种形成低温生长缓冲层的方法，其具有以下步骤：将Ga 2 N 3 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2 O 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。并在缓冲层生长条件下将具有TMG，TMA和NH 3的两种或多种的源气体供应到Ga 2 O 3 N 3衬底上以在Ga 2 N 3 O 3衬底上形成低温生长的缓冲层。

3. 发明授权

US08945965B2 Method for producing a group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08945965B2
公开(公告)日：2015-02-03
申请号：US13525110
申请日：2012-06-15
申请人： Naoyuki Nakada , Yasuhisa Ushida
发明人： Naoyuki Nakada , Yasuhisa Ushida
IPC分类号： H01L21/00 , H01L33/00 , H01L33/14
CPC分类号： H01L33/007 , H01L33/14
摘要： The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×1020/cm3. A plurality of regions with a nitrogen polarity is formed in the crystals with a Group III element polarity, and thus the p cladding layer has a hexagonal columnar concave and convex configuration on the surface thereof. Subsequently, a p contact layer of GaN is formed by the MOCVD method, in a film along the concave and convex configuration on the p cladding layer.
摘要翻译：本发明提供了具有改善的光提取性能的III族氮化物半导体发光器件。在制造方法中，通过MOCVD法在30kPa的压力和1.5×10 10 / cm 3的Mg浓度的发光层上形成p-AlGaN的p包层。在具有III族元素极性的晶体中形成具有氮极性的多个区域，因此p包覆层在其表面上具有六边形柱状凹凸构造。随后，通过MOCVD法在p包覆层上沿着凹凸构造的膜中形成GaN的p接触层。

4. 发明授权

US08680581B2 Method for producing group III nitride semiconductor and template substrate 有权
标题翻译：制备III族氮化物半导体和模板衬底的方法
公开(公告)号：US08680581B2
公开(公告)日：2014-03-25
申请号：US12654562
申请日：2009-12-23
申请人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
发明人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/045
摘要： The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less.
摘要翻译：本发明提供一种III族氮化物半导体的制造方法。该方法包括通过蚀刻在生长衬底的表面上形成凹槽; 通过溅射在生长衬底的槽形表面上形成缓冲膜; 在含有氢和氨的气氛中将衬底加热到生长所关注的III族氮化物半导体的温度; 并在生长温度下在槽的侧表面外延生长III族氮化物半导体。调节缓冲膜的厚度或生长温度，使得III族氮化物半导体主要在平行于生长衬底主表面的方向上在槽的侧表面上生长。缓冲膜的厚度被调节为小于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III III族氮化物半导体的缓冲膜的厚度。生长温度被调节为低于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III族氮化物半导体的温度。生长温度优选为1020〜1100℃。所使用的缓冲膜是厚度为150以下的AlN膜。

5. 发明申请

US20050076828A1 Process for fabrication of III nitride-based compound semiconductors 审中-公开
标题翻译：制备III族氮化物基化合物半导体的方法
公开(公告)号：US20050076828A1
公开(公告)日：2005-04-14
申请号：US10924260
申请日：2004-08-24
申请人： Tetsuya Taki , Yasuhisa Ushida , Kazuki Nishijima
发明人： Tetsuya Taki , Yasuhisa Ushida , Kazuki Nishijima
IPC分类号： C30B23/00 , C30B25/00 , C30B25/02 , C30B25/14 , C30B28/12 , C30B28/14 , C30B29/40 , H01L21/205 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/32 , H01L33/40
CPC分类号： C30B29/40 , C30B25/02 , C30B25/14
摘要： A process for the fabrication of a III nitride-based compound semiconductor includes a first crystal growth step for growing a semiconductor layer A made of a III nitride-based compound semiconductor on a crystal growth surface, and a second crystal growth step for growing a semiconductor layer B made of a III nitride-based compound semiconductor on the semiconductor layer A in which a lateral crystal growth rate of the semiconductor layer A in the first crystal growth step is lower than a lateral crystal growth rate of the semiconductor layer B in the second crystal growth step.
摘要翻译：一种用于制造III族氮化物基化合物半导体的方法包括用于在晶体生长表面上生长由III族氮化物基化合物半导体制成的半导体层A的第一晶体生长步骤和用于生长半导体的第二晶体生长步骤在第一晶体生长步骤中半导体层A的横向晶体生长速率低于第二晶体生长步骤中的半导体层B的横向晶体生长速率的半导体层A上由III族氮化物基化合物半导体制成的层B 晶体生长步骤。

6. 发明授权

US07948061B2 Group III nitride-based compound semiconductor device 有权
标题翻译： III族氮化物类化合物半导体器件
公开(公告)号：US07948061B2
公开(公告)日：2011-05-24
申请号：US12219695
申请日：2008-07-25
申请人： Yoshiki Saito , Yasuhisa Ushida
发明人： Yoshiki Saito , Yasuhisa Ushida
IPC分类号： H01L29/04
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16 , H01L33/20 , H01L33/382
摘要： A characteristic feature of the invention is to form, in a Group III nitride-based compound semiconductor device, a negative electrode on a surface other than a Ga-polar C-plane. In a Group III nitride-based compound semiconductor light-emitting device, there are formed, on an R-plane sapphire substrate, an n-contact layer, a layer for improving static breakdown voltage, an n-cladding layer made of a multi-layer structure having ten stacked sets of an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer, a multi-quantum well (MQW) light-emitting layer made of a combination of In0.25Ga0.75N well layers and GaN barrier layers stacked alternatingly, a p-cladding layer made of a multi-layer structure including a p-type Al0.3Ga0.7N layer and a p-In0.08Ga0.92N layer, and a p-contact layer (thickness: about 80 nm) made of a stacked structure including two p-GaN layers having different magnesium concentrations. Through etching, the n-contact layer having a thickness direction along the c-axis is provided with stripe-patterned microditches each having side walls, which assume a C-plane, whereby ohmic contact is established between a negative electrode and each C-plane side wall.
摘要翻译：本发明的特征在于，在III族氮化物系化合物半导体装置中，在Ga极C面以外的表面上形成负极。在III族氮化物系化合物半导体发光元件中，在R面蓝宝石衬底上形成n接触层，用于提高静电击穿电压的层，由多层结构形成的n包层，具有未堆积的In0.1Ga0.9N层，未掺杂的GaN层和硅（Si）掺杂的GaN层的十个堆叠组的多层结构，由In0组合的多量子阱（MQW）发光层 0.25Ga0.75N阱层和GaN势垒层交替堆叠，由包括p型Al0.3Ga0.7N层和p-In0.08Ga0.92N层的多层结构制成的p型包层，p - 接触层（厚度：约80nm），其由包括具有不同镁浓度的两个p-GaN层的堆叠结构制成。通过蚀刻，具有沿着c轴的厚度方向的n接触层设置有条形图案化的每个具有侧壁的微阵列，其呈现C面，由此在负极和每个C面之间建立欧姆接触侧墙。

7. 发明申请

US20100244042A1 Group III nitride compound semiconductor light emitting element and manufacturing method thereof 审中-公开
标题翻译： III族氮化物化合物半导体发光元件及其制造方法
公开(公告)号：US20100244042A1
公开(公告)日：2010-09-30
申请号：US12659763
申请日：2010-03-19
申请人： Yoshiki Saito , Yasuhisa Ushida
发明人： Yoshiki Saito , Yasuhisa Ushida
IPC分类号： H01L33/44 , H01L33/30 , H01L21/20
CPC分类号： H01L33/24 , H01L33/08 , H01L33/32
摘要： A group III nitride compound semiconductor light emitting element comprising: a first layer which is a single crystal layer of a group III nitride compound semiconductor, the first layer formed on the buffer layer and including a threading dislocation; a second layer of a group III nitride compound semiconductor formed on the first layer, the second layer including a pit and a flat portion, wherein the pit continuing from the threading dislocations and having a cross section parallel to the substrate expanding in a growth direction of the second layer; a luminescent layer including a flat portion and a pit corresponding to those of the second layer. The indium concentration in the pit of the luminescent layer is smaller than that in the flat portion of the luminescent layer. A luminescent spectrum width of thereof is expanded as compared to a case where the pit does not exist.
摘要翻译：一种III族氮化物化合物半导体发光元件，包括：第一层，其是III族氮化物化合物半导体的单晶层，所述第一层形成在所述缓冲层上并且包括穿透位错; 形成在第一层上的第III族氮化物化合物半导体的第二层，第二层包括凹坑和平坦部分，其中所述凹坑从穿透位错继续并且具有平行于基板沿其生长方向扩展的横截面第二层; 包括平坦部分和与第二层相对应的凹坑的发光层。发光层的凹坑中的铟浓度比发光层的平坦部的铟浓度小。与不存在凹坑的情况相比，其发光光谱宽度扩大。

8. 发明申请

US20100102360A1 Method for producing group III nitride semiconductor and template substrate 有权
标题翻译：制备III族氮化物半导体和模板衬底的方法
公开(公告)号：US20100102360A1
公开(公告)日：2010-04-29
申请号：US12654562
申请日：2009-12-23
申请人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
发明人： Naoyuki Nakada , Koji Okuno , Yasuhisa Ushida
IPC分类号： H01L29/20 , H01L21/203 , H01L29/06
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/045
摘要： The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less.
摘要翻译：本发明提供一种III族氮化物半导体的制造方法。该方法包括通过蚀刻在生长衬底的表面上形成凹槽; 通过溅射在生长衬底的槽形表面上形成缓冲膜; 在含有氢和氨的气氛中将衬底加热到生长所关注的III族氮化物半导体的温度; 并且在生长温度下在槽的侧表面外延生长III族氮化物半导体。调节缓冲膜的厚度或生长温度，使得III族氮化物半导体主要在平行于生长衬底主表面的方向上在槽的侧表面上生长。缓冲膜的厚度被调节为小于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III III族氮化物半导体的缓冲膜的厚度。生长温度被调节为低于在平面生长衬底上沿垂直于生长衬底的方向均匀地外延生长III族氮化物半导体的温度。生长温度优选为1020〜1100℃。所使用的缓冲膜是厚度为150以下的AlN膜。

9. 发明授权

US08980657B2 Method for producing a group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08980657B2
公开(公告)日：2015-03-17
申请号：US13545902
申请日：2012-07-10
申请人： Shinya Boyama , Yasuhisa Ushida
发明人： Shinya Boyama , Yasuhisa Ushida
IPC分类号： H01L21/00 , H01L33/00 , H01L21/02 , H01L33/14
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/14
摘要： The present invention is a method for producing a light-emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700° C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700° C. which is the temperature of the previous process.
摘要翻译：本发明是一种发光装置的制造方法，该发光装置的p型接触层与电极具有p型导电性和降低的接触电阻。在p包层上，通过MOCVD，形成掺杂有Mg的第一p接触层的GaN。随后，在700℃的后续工艺中将温度降低到形成第二p接触层的生长温度之后，停止供应氨并将载气从氢转换成氮。由此，Mg在第一p接触层中被激活，并且第一p接触层具有p型导电。接下来，通过使用氮气作为载气的MOCVD在第一p接触层上形成掺杂有Mg的第一p接触层，同时保持温度为700℃，这是先前工艺的温度。

10. 发明授权

US08518806B2 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体的制造方法，含有III族氮化物系化合物半导体的晶片和III族氮化物系化合物半导体装置
公开(公告)号：US08518806B2
公开(公告)日：2013-08-27
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

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