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1. 发明授权

US5626675A Resist processing apparatus, substrate processing apparatus and method of transferring a processed article 失效
标题翻译：抗蚀剂处理装置，基板处理装置以及转印加工品的方法
公开(公告)号：US5626675A
公开(公告)日：1997-05-06
申请号：US340758
申请日：1994-11-16
申请人： Yasuhiro Sakamoto , Masami Akimoto , Kiyohisa Tateyama , Shinzi Kitamura
发明人： Yasuhiro Sakamoto , Masami Akimoto , Kiyohisa Tateyama , Shinzi Kitamura
IPC分类号： H01L21/683 , H01L21/687 , B05C13/00
CPC分类号： H01L21/6715 , H01L21/6838 , H01L21/68707 , Y10S134/902 , Y10S414/135
摘要： A substrate processing apparatus has an article transferring unit for transferring articles, and an arm assembly is provided on the transferring unit. Each arm of the arm assembly is provided with pawls for contacting and supporting undersurface portions of the peripheral side wall of each of the articles, and one or more sucking portions are provided on the upper surface of the arm and are disposed above the corresponding pawl or pawls. The pawls, or the sucking portion or sucking portions are selected for every process, and supporting or holding of each of the articles and the required transfer of each of the articles are performed. The transfer can be performed by changing the operating range of each of the arms without replacing the arms. Taking each of the articles in and out of the processing units are carried out smoothly and a series of processes are achieve efficiently.
摘要翻译：基板处理设备具有用于传送物品的物品传送单元，并且在传送单元上设置有臂组件。臂组件的每个臂设置有用于接触和支撑每个制品的周边侧壁的下表面部分的棘爪，并且在臂的上表面上设置一个或多个抽吸部分，并且设置在相应的棘爪或爪子为每个处理选择爪或抽吸部或抽吸部，并且执行每个物品的支撑或保持以及每个物品的所需转移。可以通过改变每个臂的操作范围而不更换臂来执行转移。将每个物品进出处理单元顺利进行，并且有效地实现一系列处理。

2. 发明授权

US5339128A Resist processing method 失效
标题翻译：抗蚀加工方法
公开(公告)号：US5339128A
公开(公告)日：1994-08-16
申请号：US31464
申请日：1993-03-15
申请人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
发明人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
IPC分类号： B29C31/00 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/30 , H01L21/00 , H01L21/677 , G03D5/00
CPC分类号： G03F7/7075 , B29C31/00 , G03F7/16 , G03F7/26 , G03F7/3021 , H01L21/67173 , H01L21/67178 , H01L21/67742 , Y10S134/902 , Y10S414/136
摘要： A resist process system of the present invention includes at least two robots for conveying a wafer, a passage through which the robots can move, plural process units arranged along the passage, and a waiting unit for temporarily holding the wafer which is to be processed. The waiting unit is arranged beside the passage and between the process units and it includes plural compartments partitioned in it.
摘要翻译：本发明的抗蚀剂处理系统包括至少两个用于输送晶片的机器人，机器人可以移动的通道，沿着通道布置的多个处理单元和用于临时保持待处理的晶片的等待单元。等待单元布置在通道旁边和处理单元之间，并且其包括分隔在其中的多个隔室。

3. 发明授权

US5416047A Method for applying process solution to substrates 失效
标题翻译：将工艺溶液应用于基材的方法
公开(公告)号：US5416047A
公开(公告)日：1995-05-16
申请号：US93699
申请日：1993-07-20
申请人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama , Masaaki Murakami , Norimitsu Morioka , Takashi Takekuma
发明人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama , Masaaki Murakami , Norimitsu Morioka , Takashi Takekuma
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L21/67173 , H01L21/6715 , H01L21/6719 , Y10S430/136
摘要： A substrate solution-processing method comprising the steps of preparing a pair of spin chucks by which semiconductor wafers are supported, a housing by which the wafers supported by the spin chucks are enclosed, motor for rotating the spin chucks, a nozzle through which developing or resist solution is applied to each wafer, means for moving the nozzle between the wafers, and a waiting trench at which the nozzle is kept waiting, setting substantially same the times needed to finish the cycles of processing the wafers supported on at least two spin chucks and delaying one process cycle from the other, and keeping the nozzle waiting at the waiting trench unless developing or resist solution is applied to each wafer through the nozzle.
摘要翻译：一种基板溶液处理方法，包括以下步骤：准备一对支撑半导体晶片的旋转卡盘，包围由旋转卡盘支撑的晶片的壳体，用于旋转旋转卡盘的马达，用于旋转旋转卡盘的马达，将抗蚀剂溶液施加到每个晶片，用于在晶片之间移动喷嘴的装置以及喷嘴保持等待的等待沟槽，其设置与完成在至少两个旋转夹头上支撑的晶片的处理循环所需的时间基本相同并且从另一个延迟一个处理周期，并且保持喷嘴等待在等待沟槽，除非通过喷嘴对每个晶片施加显影和抗蚀剂溶液。

4. 发明授权

US5442416A Resist processing method 失效
标题翻译：抗蚀加工方法
公开(公告)号：US5442416A
公开(公告)日：1995-08-15
申请号：US271675
申请日：1994-07-07
申请人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
发明人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
IPC分类号： B29C31/00 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/30 , H01L21/00 , H01L21/677 , G03D5/00
CPC分类号： G03F7/7075 , B29C31/00 , G03F7/16 , G03F7/26 , G03F7/3021 , H01L21/67173 , H01L21/67178 , H01L21/67742 , Y10S134/902 , Y10S414/136
摘要： A resist process system of the present invention includes at least two robots for conveying a wafer, a passage through which the robots can move, plural process units arranged along the passage, and a waiting unit for temporarily holding the wafer which is to be processed. The waiting unit is arranged beside the passage and between the process units and it includes plural compartments partitioned in it.
摘要翻译：本发明的抗蚀剂处理系统包括至少两个用于输送晶片的机器人，机器人可以移动的通道，沿着通道布置的多个处理单元和用于临时保持待处理的晶片的等待单元。等待单元布置在通道旁边和处理单元之间，并且其包括分隔在其中的多个隔室。

5. 发明授权

US5250114A Coating apparatus with nozzle moving means 失效
标题翻译：带喷嘴移动装置的涂布装置
公开(公告)号：US5250114A
公开(公告)日：1993-10-05
申请号：US755781
申请日：1991-09-06
申请人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama
发明人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama
IPC分类号： G03F7/16 , B05C11/08 , H01L21/00 , H01L21/027 , H01L21/30 , H01L21/68 , B05B3/00
CPC分类号： H01L21/67173 , H01L21/6715 , H01L21/6719
摘要： A coating apparatus includes two spin chucks located in a single casing to support and rotate wafers. A waiting trench is located between the spin chucks to discharge that part of coating liquid which has been hardened at the tip of a nozzle. The wafers are loaded and unloaded to and from the spin chucks by a single carrying member located outside the casing. A coating liquid supply mechanism includes the single nozzle for dispensing coating liquid onto the wafers supported by the spin chucks. The nozzle is moved between the spin chucks by a moving arm. Processing cycles relative to the spin chucks are set for a same processing time and the processing cycle relative to one of the spin chucks is shifted from that relative to the other by a half cycle. The nozzle is rested on the waiting trench at the time when it does not dispense the coating liquid onto the wafers supported by the spin chucks.
摘要翻译：涂覆装置包括位于单个壳体中的两个旋转卡盘，以支撑和旋转晶片。等离子沟槽位于旋转卡盘之间，以排出在喷嘴尖端已经硬化的涂布液的那部分。通过位于壳体外部的单个承载构件将晶片装载和卸载到旋转卡盘。涂布液供给机构包括用于将涂布液分配到由旋转卡盘支撑的晶片上的单个喷嘴。喷嘴通过移动臂在旋转卡盘之间移动。相对于旋转卡盘的处理循环被设定为相同的处理时间，并且相对于其中一个旋转卡盘的处理循环相对于另一旋转卡盘的处理循环相对于另一旋转卡盘偏移半个周期。在不将涂布液分配到由旋转卡盘支撑的晶片上时，喷嘴搁置在等待的沟槽上。

6. 发明授权

US5202716A Resist process system 失效
标题翻译：抵抗过程系统
公开(公告)号：US5202716A
公开(公告)日：1993-04-13
申请号：US904505
申请日：1992-06-25
申请人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
发明人： Kiyohisa Tateyama , Masami Akimoto , Mitsuru Ushijima
IPC分类号： B29C31/00 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/30 , H01L21/00 , H01L21/677
CPC分类号： H01L21/67173 , B29C31/00 , G03F7/16 , G03F7/26 , G03F7/3021 , G03F7/7075 , H01L21/67178 , H01L21/67742
摘要： A resist process system of the present invention includes at least two robots for conveying a wafer, a passage through which the robots can move, plural process units arranged along the passage, and a waiting unit for temporarily holding the wafer which is to be processed. The waiting unit is arranged beside the passage and between the process units and it includes plural compartments partitioned in it.
摘要翻译：本发明的抗蚀剂处理系统包括至少两个用于输送晶片的机器人，机器人可以移动的通道，沿着通道布置的多个处理单元和用于临时保持待处理的晶片的等待单元。等待单元布置在通道旁边和处理单元之间，并且其包括分隔在其中的多个隔室。

7. 发明授权

US5061144A Resist process apparatus 失效
标题翻译：抗蚀加工设备
公开(公告)号：US5061144A
公开(公告)日：1991-10-29
申请号：US442535
申请日：1989-11-28
申请人： Masami Akimoto , Yoshio Kimura , Osamu Hirakawa , Noriyuki Anai , Masanori Tateyama , Yasuhiro Sakamoto
发明人： Masami Akimoto , Yoshio Kimura , Osamu Hirakawa , Noriyuki Anai , Masanori Tateyama , Yasuhiro Sakamoto
IPC分类号： G03F7/26 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68707 , G03F7/26 , H01L21/67778 , Y10S414/135 , Y10S414/137
摘要： A resist process apparatus of the invention serves to load/unload a semiconductor wafer in/from the respective process mechanisms. The apparatus includes a wafer holding member for holding a semiconductor wafer, and X, Y, Z and .theta. driving mechanisms for conveying the wafer holding member to a resist coating mechanism and the like. The wafer holding member includes a support frame which is larger than diameter of a semiconductor wafer, and a plurality of support members, arranged on the support frame, for supporting the semiconductor wafer in partial contact with the peripheral portion of the semiconductor wafer. Since the contact area between the support members and a semiconductor wafer is small, changes in temperature of the semiconductor, when it is held, are small.
摘要翻译：本发明的抗蚀剂处理装置用于在各个加工机构中加载/卸载半导体晶片。该装置包括用于保持半导体晶片的晶片保持构件和用于将晶片保持构件输送到抗蚀剂涂覆机构等的X，Y，Z和θ驱动机构。晶片保持构件包括比半导体晶片的直径大的支撑框架和布置在支撑框架上的多个支撑构件，用于支撑半导体晶片与半导体晶片的周边部分部分接触。由于支撑构件和半导体晶片之间的接触面积小，因此在保持时半导体的温度变化小。

8. 发明授权

US06368776B1 Treatment apparatus and treatment method 有权
标题翻译：治疗仪器及治疗方法
公开(公告)号：US06368776B1
公开(公告)日：2002-04-09
申请号：US09270806
申请日：1999-03-17
申请人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
发明人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
IPC分类号： G03C500
CPC分类号： H01L21/67253 , H01L21/67109 , H01L21/6715 , H01L21/67248
摘要： A gas supplied from a gas source is exposed to an atmosphere above a liquid surface in a tank saving the liquid and thereafter is supplied around a wafer in a treatment chamber through a gas supply passage and a supply port. The gas supplied around the wafer uniformly flows from around the wafer toward above the center of the wafer and thereafter is discharged from an exhaust port which is formed at the top of the treatment chamber. Meanwhile, with respect to the wafer, heat treatment is performed by a heating mechanism and a predetermined PEB is carried out. The humidified gas is supplied into the treatment chamber, thereby preventing drying in the treatment chamber. Therefore, water in resist is not taken out, resulting in that a required resist pattern can be formed on the wafer.
摘要翻译：从气源供给的气体暴露在储存液体的槽内的液面以上的气氛中，然后通过气体供给通路和供给口在处理室内的晶片供给。在晶片周围供给的气体均匀地从晶片周围朝向晶片的中心方向流动，之后从形成在处理室顶部的排气口排出。同时，相对于晶片，通过加热机构进行热处理，进行规定的PEB。将加湿气体供给到处理室，防止处理室内的干燥。因此，抗蚀剂中的水不会被取出，导致可以在晶片上形成所需的抗蚀剂图案。

9. 发明授权

US5620560A Method and apparatus for heat-treating substrate 失效
标题翻译：底物热处理方法及装置
公开(公告)号：US5620560A
公开(公告)日：1997-04-15
申请号：US538589
申请日：1995-10-03
申请人： Masami Akimoto , Yasuhiro Sakamoto , Kouji Harada
发明人： Masami Akimoto , Yasuhiro Sakamoto , Kouji Harada
IPC分类号： H01L21/00
CPC分类号： H01L21/67103
摘要： A heat-treating method of heating and cooling a substrate comprising the steps of carrying the wafer into a heat-treating section by a main arm and mounting the wafer on a heating stage, heating the wafer mounted on the heating stage, lifting the wafer thus heated from the heating stage, approaching a cooling holder to the wafer thus lifted to cool the wafer above the heating stage, and carrying the cooled wafer from above the heating stage.
摘要翻译：一种加热和冷却衬底的热处理方法，包括以下步骤：通过主臂将晶片运送到热处理部分中，并将晶片安装在加热台上，加热安装在加热台上的晶片，从而提升晶片从加热台加热，将冷却保持器接近由此提升的晶片，以将晶片冷却到加热台上方，并从加热台上方承载冷却的晶片。

10. 发明授权

US5028955A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US5028955A
公开(公告)日：1991-07-02
申请号：US480005
申请日：1990-02-14
申请人： Yasushi Hayashida , Noriyuki Anai , Osamu Hirakawa , Masami Akimoto , Yasuhiro Sakamoto , Keisuke Shigaki , Masashi Moriyama
发明人： Yasushi Hayashida , Noriyuki Anai , Osamu Hirakawa , Masami Akimoto , Yasuhiro Sakamoto , Keisuke Shigaki , Masashi Moriyama
IPC分类号： G03F7/20
CPC分类号： G03F7/70725 , G03F7/2051
摘要： An exposure apparatus of this invention is used in an exposure process of semiconductor and LCD devices. The exposure apparatus includes a stage on which a semiconductor wafer is placed, a rotating mechanism for rotating the stage, a radiation unit arranged to oppose a support surface of the stage, a slider mechanism for reciprocating the radiation unit along a straight line passing through the center of the support surface of the stage, an exposure range input unit for inputting a desired exposure range of the wafer, an exposure range memory unit for storing the input exposure range, a CCD image sensor for detecting a reference position of the wafer, a relative position detector for detecting a relative position between the detected reference position and the radiation unit, a controller for controlling the sliding mechanism in correspondence with the relative position and the exposure range, and a light amount control mechanism for controlling an amount of light radiated from the irradiation mechanism to the wafer in correspondence with the relative position and the exposure range.
摘要翻译：本发明的曝光装置用于半导体和LCD装置的曝光处理。曝光装置包括其上放置有半导体晶片的台，用于旋转台的旋转机构，布置成与舞台的支撑表面相对的辐射单元，用于使辐射单元沿着穿过舞台的支撑表面的中心，用于输入晶片的期望曝光范围的曝光范围输入单元，用于存储输入曝光范围的曝光范围存储单元，用于检测晶片的参考位置的CCD图像传感器，相对位置检测器，用于检测检测到的基准位置和辐射单元之间的相对位置，控制器，用于根据相对位置和曝光范围来控制滑动机构;以及光量控制机构，用于控制从对应于相对位置和曝光范围的到晶片的照射机构。

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