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1. 发明授权

US06420271B2 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06420271B2
公开(公告)日：2002-07-16
申请号：US09814839
申请日：2001-03-23
申请人： Yasuhiko Sato , Eishi Shiobara , Motoyuki Sato , Yasunobu Onishi , Hiroshi Tomita , Tokuhisa Ohiwa , Junko Ohuchi , Hisataka Hayashi
发明人： Yasuhiko Sato , Eishi Shiobara , Motoyuki Sato , Yasunobu Onishi , Hiroshi Tomita , Tokuhisa Ohiwa , Junko Ohuchi , Hisataka Hayashi
IPC分类号： H01L214763
CPC分类号： H01L21/31144 , G03F7/085 , G03F7/09 , H01L21/3081 , H01L21/32139
摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.
摘要翻译：一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜，促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

2. 发明申请

US20120009786A1 PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：等离子体处理方法和半导体器件的制造方法
公开(公告)号：US20120009786A1
公开(公告)日：2012-01-12
申请号：US13178759
申请日：2011-07-08
申请人： Shigeru TAHARA , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru TAHARA , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： H01L21/3065
CPC分类号： H01L21/02071
摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.
摘要翻译：进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

3. 发明授权

US09126229B2 Deposit removal method 有权
标题翻译：存款清除方法
公开(公告)号：US09126229B2
公开(公告)日：2015-09-08
申请号：US14116952
申请日：2012-05-10
申请人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： B05D3/14 , H01L21/02 , H01L21/311
CPC分类号： B05D3/145 , H01L21/02057 , H01L21/02063 , H01L21/31116
摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.
摘要翻译：通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理处理，重复第一周期和第二周期的多个周期。在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

4. 发明申请

US20140083979A1 DEPOSIT REMOVAL METHOD 有权
标题翻译：沉积物去除方法
公开(公告)号：US20140083979A1
公开(公告)日：2014-03-27
申请号：US14116952
申请日：2012-05-10
申请人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： B05D3/14
CPC分类号： B05D3/145 , H01L21/02057 , H01L21/02063 , H01L21/31116
摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.
摘要翻译：通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理处理，重复第一周期和第二周期的多个周期。在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

5. 发明授权

US09177781B2 Plasma processing method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的等离子体处理方法和制造方法
公开(公告)号：US09177781B2
公开(公告)日：2015-11-03
申请号：US13178759
申请日：2011-07-08
申请人： Shigeru Tahara , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Fumiko Yamashita , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： H01L21/02
CPC分类号： H01L21/02071
摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.
摘要翻译：进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

6. 发明授权

US06673163B2 Apparatus and method for cleaning a semiconductor substrate 失效
标题翻译：用于清洁半导体衬底的装置和方法
公开(公告)号：US06673163B2
公开(公告)日：2004-01-06
申请号：US10179885
申请日：2002-06-26
申请人： Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
发明人： Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
IPC分类号： B08B300
CPC分类号： H01L21/67051 , B08B3/02 , B08B2203/0288 , Y10S134/902
摘要： There is proposed an apparatus and method for cleaning a semiconductor substrate, which make it possible to minimize the adhesion of mist in a cleaning tank at the occasion of cleaning a semiconductor substrate, to realize a-high removal effect of residual polishing particles, and to enable to obtain a clean surface. In view of preventing a mist generated by the jet of high pressure water from re-adhering to the substrate during the cleaning of a semiconductor substrate, a cover member is disposed at a mist-generating region so as-to prevent the splash of the mist. Additionally, a cavity is caused to generate by contacting a high pressure water with a still water, and high-frequency generated by the generation of the cavity is utilized for removing the residual polishing particles. Alternatively, the ejection of high pressure water against the surface of the substrate is performed in a liquid phase such-as ultrapure water, thereby preventing the generation of mist.
摘要翻译：提出了一种用于清洁半导体衬底的装置和方法，其使得可以在清洁半导体衬底的情况下使清洁槽中的雾的粘附最小化，以实现残留的抛光颗粒的高的去除效果，并且使得能够获得干净的表面。考虑到在清洁半导体衬底期间防止高压水射流产生的雾再次附着在衬底上，覆盖构件设置在产生雾的区域，以防止雾气的飞溅。此外，通过使高压水与静止水接触而产生空腔，并且通过产生空腔产生的高频被用于去除残留的抛光颗粒。或者，将高压水喷射到基板的表面上，以超纯水等液相进行，从而防止产生雾。

7. 发明授权

US06679950B2 Cleaning method and cleaner 失效
标题翻译：清洁方法和清洁剂
公开(公告)号：US06679950B2
公开(公告)日：2004-01-20
申请号：US09892742
申请日：2001-06-28
申请人： Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
发明人： Hiroshi Tomita , Motoyuki Sato , Soichi Nadahara , Mitsuhiko Shirakashi , Kenya Ito
IPC分类号： B08B300
CPC分类号： H01L21/67046 , B01F3/04099 , B01F3/0446 , B01F5/0476 , B01F2003/0439 , B01F2003/04886 , B01F2201/01 , B08B1/00 , B08B1/04 , B08B3/02 , Y10S134/902
摘要： A substrate cleaning method of the present invention enables effective cleaning of a wafer having a recess therein without causing any increase in cleaning costs. Ozone gas and ammonia water are supplied to an area right above a wafer 7 having a recess therein, and a gas-dissolving liquid is produced by dissolving the ozone gas in the ammonia water. The gas-dissolving liquid is used to carry out contact and non-contact types of physical cleaning on the wafer.
摘要翻译：本发明的基板清洗方法能够有效地清洗其中具有凹槽的晶片，而不会导致清洁成本的任何增加。将臭氧气体和氨水供给到其中具有凹部的晶片7的正上方的区域，并且通过将臭氧气体溶解在氨水中来制造气体溶解液。气溶液用于在晶片上进行接触和非接触式的物理清洁。

8. 发明授权

US06431185B1 Apparatus and method for cleaning a semiconductor substrate 失效
标题翻译：用于清洁半导体衬底的装置和方法
公开(公告)号：US06431185B1
公开(公告)日：2002-08-13
申请号：US09401864
申请日：1999-09-22
申请人： Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
发明人： Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
IPC分类号： B08B600
CPC分类号： H01L21/67051 , B08B3/02 , B08B2203/0288 , Y10S134/902
摘要： There is proposed an apparatus and method for cleaning a semiconductor substrate, which make it possible to minimize the adhesion of mist in a cleaning tank at the occasion of cleaning a semiconductor substrate, to realize a high removal effect of residual polishing particles, and to enable to obtain a clean surface. In view of preventing a mist generated by the jet of high pressure water from re-adhering to the substrate during the cleaning of a semiconductor substrate, a cover member is disposed at a mist-generating region so as to prevent the splash of the mist. Additionally, a cavity is caused to generate by contacting a high pressure water with a still water, and high-frequency generated by the generation of the cavity is utilized for removing the residual polishing particles. Alternatively, the ejection of high pressure water against the surface of the substrate is performed in a liquid phase such as ultrapure water, thereby preventing the generation of mist.
摘要翻译：提出了一种用于清洁半导体衬底的装置和方法，这使得可以在清洁半导体衬底的情况下最小化清洗槽中的雾的粘附性，以实现残留的抛光颗粒的高的去除效果，并且使得能够以获得干净的表面。考虑到在清洁半导体衬底期间防止高压水射流产生的雾再次粘附到衬底上，在雾化产生区域处设置一个盖构件，以防止雾沫的飞溅。此外，通过使高压水与静止水接触而产生空腔，并且通过产生空腔产生的高频被用于去除残留的抛光颗粒。或者，将高压水喷射到基板的表面，以超纯水等液相进行，从而防止产生雾。

9. 发明授权

US07055535B2 Holding unit, processing apparatus and holding method of substrates 失效
标题翻译：保持单元，加工设备和基板的保持方法
公开(公告)号：US07055535B2
公开(公告)日：2006-06-06
申请号：US10629678
申请日：2003-07-30
申请人： Junji Kunisawa , Norio Kimura , Kenya Ito , Akira Fukunaga , Yuuki Inoue , Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
发明人： Junji Kunisawa , Norio Kimura , Kenya Ito , Akira Fukunaga , Yuuki Inoue , Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
IPC分类号： B08B3/08 , B25B11/00 , H01L21/306
CPC分类号： H01L21/6838 , Y10S134/902 , Y10T279/11
摘要： A holding unit holds a substrate to enable a surface of the substrate to be processed. The unit has a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.
摘要翻译：保持单元保持基板以使得能够处理基板的表面。该单元具有与基板的表面的周边部分接触并吸附基板的真空吸附构件。处理装置稳定地保持晶片，并且允许晶片的边缘，斜面部分和/或背面被处理。

10. 发明授权

US10199240B2 Substrate processing method, substrate processing apparatus, and storage medium 有权
公开(公告)号：US10199240B2
公开(公告)日：2019-02-05
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： H01L21/67 , H01L21/02 , B08B7/00
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

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