专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06468436B1 Method and system for providing a magnetoresistive head having higher efficiency 有权
标题翻译：提供具有更高效率的磁阻头的方法和系统
公开(公告)号：US06468436B1
公开(公告)日：2002-10-22
申请号：US09614241
申请日：2000-07-12
申请人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
发明人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B5/3932 , G11B5/3935 , G11B2005/3996 , Y10T29/49052
摘要： A system and method for providing a head for reading data is disclosed. The method and system include providing a magnetoresistive element and providing a flux guide having a high resistivity. The magnetoresistive element has an end. The flux guide also has an end. The end of the flux guide is adjacent to the end of the magnetoresistive element.
摘要翻译：公开了一种用于提供用于读取数据的磁头的系统和方法。该方法和系统包括提供磁阻元件并提供具有高电阻率的磁通引导件。磁阻元件有一端。助焊剂也有一个结束。磁通引导件的端部与磁阻元件的端部相邻。

2. 发明授权

US6137661A System for providing a magnetoresistive head having higher efficiency 失效
标题翻译：用于提供具有更高效率的磁阻头的系统
公开(公告)号：US6137661A
公开(公告)日：2000-10-24
申请号：US174469
申请日：1998-10-19
申请人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
发明人： Xizeng Shi , Hua-Ching Tong , Ming Zhao , Francis Liu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B5/3932 , G11B5/3935 , G11B2005/3996 , Y10T29/49052
摘要： A system and method for providing a head for reading data is disclosed. The method and system include providing a magnetoresistive element and providing a flux guide having a high resistivity. The magnetoresistive element has an end. The flux guide also has an end. The end of the flux guide is adjacent to the end of the magnetoresistive element.
摘要翻译：公开了一种用于提供用于读取数据的磁头的系统和方法。该方法和系统包括提供磁阻元件并提供具有高电阻率的磁通引导件。磁阻元件有一端。助焊剂也有一个目的。磁通引导件的端部与磁阻元件的端部相邻。

3. 发明授权

US07007372B1 Method for making high speed, high areal density inductive write structure 失效
标题翻译：制造高速，高密度感应写入结构的方法
公开(公告)号：US07007372B1
公开(公告)日：2006-03-07
申请号：US10656311
申请日：2003-09-05
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高B sat sat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括一高层高层材料的薄层（也优选具有CoZrCr叠层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料构成，例如Ni -Fe合金。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

4. 发明授权

US06618223B1 High speed, high areal density inductive writer 失效
标题翻译：高速，高密度感应写入器
公开(公告)号：US06618223B1
公开(公告)日：2003-09-09
申请号：US09617791
申请日：2000-07-18
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5147
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高Bsat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括具有高Bsat材料的薄内层（还优选具有CoZrCr层压层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料如Ni-Fe合金构成。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

5. 发明授权

US06747301B1 Spin dependent tunneling barriers formed with a magnetic alloy 有权
标题翻译：由磁性合金形成的自旋依赖隧道屏障
公开(公告)号：US06747301B1
公开(公告)日：2004-06-08
申请号：US10071798
申请日：2002-02-06
申请人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
发明人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01F10/3286 , H01L27/226
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
摘要翻译：公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

6. 发明授权

US06639291B1 Spin dependent tunneling barriers doped with magnetic particles 有权
标题翻译：掺杂有磁性颗粒的自旋相关隧道势垒
公开(公告)号：US06639291B1
公开(公告)日：2003-10-28
申请号：US10071796
申请日：2002-02-06
申请人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
发明人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
IPC分类号： H01L2972
CPC分类号： H01L27/226 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L29/66984 , H01L43/08
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
摘要翻译：公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。增加隧道屏障的厚度可以提高制造成本，例如提高产量。

7. 发明授权

US5986978A Read/write head and method for magnetic reading and magneto-optical writing on a data storage medium 失效
标题翻译：在数据存储介质上进行磁读取和磁光写入的读/写头和方法
公开(公告)号：US5986978A
公开(公告)日：1999-11-16
申请号：US5914
申请日：1998-01-12
申请人： Robert E. Rottmayer , Charles C- K Cheng , Xizeng Shi , Lijun Tong , Hua-Ching Tong
发明人： Robert E. Rottmayer , Charles C- K Cheng , Xizeng Shi , Lijun Tong , Hua-Ching Tong
IPC分类号： G11B5/00 , G11B5/012 , G11B5/39 , G11B5/48 , G11B11/00 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3967 , G11B5/4806 , G11B5/4886 , G11B2005/001 , G11B2005/0021 , G11B2005/3996
摘要： A read/write head is structurally significantly less complicated than optical reading devices, requires minimal or no optical alignment, capable of writing at higher track densities, and has better control of the data and servo tracks than conventional magnetic heads. The head is also capable of using an available heat source and a relatively weak magnetic field, such as 300 Oersteds, to write data on a data storage medium. The combination of a magnetic read sensor with a near field magneto-optical (MO) write element creates a hybrid read/write head capable of high density recording with a high signal to noise ratio. The integration of the MO write element can be accomplished by various alternative or complementary methods. One method is to mount a heat source, such as a laser or light source on a slider with minimal or no additional optical components. Another method is to form an optical channel (or waveguide) in the slider and/or in the magnetic write element for directing a laser beam onto a target spot on, or within the data storage medium. Since magneto-optical recording requires a magnetic field of a few hundred Oersteds, the head utilizes write poles of magnetic materials operated at a low magnetic field. This is a significant simplification over existing magnetic and MO read/write heads, since the track width of the data storage medium is defined by the laser beam width and not by the pole width. In a preferred embodiment, a giant magneto-resistive (GMR) element is selected as a read element.
摘要翻译：读/写头在结构上比光学读取装置复杂得多，需要最小或不需要光学对准，能够以更高的轨道密度写入，并且比传统磁头更好地控制数据和伺服磁道。头部还能够使用可用的热源和相对较弱的磁场（例如300奥斯特）来在数据存储介质上写入数据。磁读取传感器与近场磁光（MO）写元件的组合产生能够以高信噪比进行高密度记录的混合读/写头。 MO写入元件的集成可以通过各种替代或补充方法来实现。一种方法是将热源（例如激光或光源）安装在具有最少或没有额外的光学部件的滑块上。另一种方法是在滑块和/或磁写入元件中形成光通道（或波导），用于将激光束引导到数据存储介质上或数据存储介质内的目标点上。由于磁光记录需要几百奥斯特的磁场，所以磁头利用在低磁场下操作的磁性材料的写磁极。这是对现有磁盘和MO读/写磁头的显着简化，因为数据存储介质的磁道宽度由激光束宽度而不是由磁极宽度限定。在优选实施例中，选择巨磁电阻（GMR）元件作为读取元件。

8. 发明授权

US06888184B1 Shielded magnetic ram cells 有权
标题翻译：屏蔽磁性柱塞电池
公开(公告)号：US06888184B1
公开(公告)日：2005-05-03
申请号：US10074394
申请日：2002-02-11
申请人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
发明人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
IPC分类号： G11C11/16 , H01L21/336 , H01L27/22
CPC分类号： G11C11/16 , H01L27/222
摘要： A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.
摘要翻译：公开了一种在半导体衬底上制造的磁存储器。该方法和系统包括多个磁性隧道结和用于磁屏蔽多个磁性隧道结的多个屏蔽。多个磁隧道结中的每一个包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。多个屏蔽件的至少一部分具有高的力矩和高的磁导率并且是导电的。多个屏蔽件与多个磁性隧道结电隔离。多个磁隧道结在多个屏蔽之间。

9. 发明授权

US06317297B1 Current pinned dual spin valve with synthetic pinned layers 有权
标题翻译：当前固定式双自旋阀，具有合成钉扎层
公开(公告)号：US06317297B1
公开(公告)日：2001-11-13
申请号：US09413287
申请日：1999-10-06
申请人： Hua-Ching Tong , Xizeng Shi , Subrata Dey , Matthew Richard Gibbons
发明人： Hua-Ching Tong , Xizeng Shi , Subrata Dey , Matthew Richard Gibbons
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3954 , G11B2005/3996 , H01F10/3263
摘要： A method and system for providing a magnetoresistive sensor is disclosed. The method and system include providing a first pinned layer, providing a first spacer layer above the first pinned layer, and providing a free layer above the first spacer layer. The method and system further include providing a second spacer layer above the free layer and providing a second pinned layer above the second spacer layer. The first pinned layer includes a first magnetic layer and a second magnetic layer separated by a first nonmagnetic layer. The first magnetic layer is antiferromagnetically coupled with the second magnetic layer. The second pinned layer includes a third magnetic layer and a fourth magnetic layer separated by a second nonmagnetic layer. The third magnetic layer is antiferromagnetically coupled with the fourth magnetic layer. The first pinned layer and the second pinned layer are pinned by a current carried by the magnetoresistive head during use.
摘要翻译：公开了一种用于提供磁阻传感器的方法和系统。该方法和系统包括提供第一被钉扎层，在第一被钉扎层上方提供第一间隔层，以及在第一间隔层上方提供自由层。该方法和系统还包括在自由层上方提供第二间隔层，并在第二间隔层上方提供第二钉扎层。第一被钉扎层包括由第一非磁性层分离的第一磁性层和第二磁性层。第一磁性层与第二磁性层反铁磁耦合。第二被钉扎层包括由第二非磁性层分离的第三磁性层和第四磁性层。第三磁性层与第四磁性层反铁磁耦合。第一被钉扎层和第二钉扎层在使用期间由磁阻头承载的电流固定。

10. 发明授权

US06351355B1 Spin valve device with improved thermal stability 有权
标题翻译：具有改善的热稳定性的自旋阀装置
公开(公告)号：US06351355B1
公开(公告)日：2002-02-26
申请号：US09247814
申请日：1999-02-09
申请人： Tai Min , Hua-Ching Tong , Yiming Huai , Wengie Chen
发明人： Tai Min , Hua-Ching Tong , Yiming Huai , Wengie Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996
摘要： The present invention provides spin valve with a magnetic compensation field which couples to the pinned layer and counteracts sensing current induced magnetic field. The spin valve sensor of the present invention may be formed having a structure comprising: a free layer, a first spacer layer, a pinned layer, a pinning layer, a second spacer layer, and a compensation layer. The compensation layer may be formed of ferromagnetic material with its magnetization set so that the compensation field oriented in a reinforcing relationship with the magnetization of the pinned layer. Current through the compensation layer and the spacer layer may add to the compensation field. The spacer layer may be formed of a nonmagnetic material of sufficient thickness to prevent interaction between the pinning layer and the compensation layer while providing a sufficiently small distance to allow sufficient magnetic coupling to the pinned layer. The present invention may be used to improve thermal stability and reduce Barkhausen noise while not impacting output symmetry.
摘要翻译：本发明提供具有磁补偿场的自旋阀，其耦合到被钉扎层并抵消感测电流感应磁场。本发明的自旋阀传感器可以形成为具有自由层，第一间隔层，钉扎层，钉扎层，第二间隔层和补偿层的结构。补偿层可由铁磁材料形成，其磁化强度设定为使得补偿场定向成与被钉扎层的磁化强化关系。通过补偿层和间隔层的电流可能增加到补偿场。间隔层可以由足够厚度的非磁性材料形成，以防止钉扎层和补偿层之间的相互作用，同时提供足够小的距离以允许与被钉扎层的足够的磁耦合。本发明可用于改善热稳定性并降低巴克豪森噪声，同时不影响输出对称性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式