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1. 发明授权

US06747301B1 Spin dependent tunneling barriers formed with a magnetic alloy 有权
标题翻译：由磁性合金形成的自旋依赖隧道屏障
公开(公告)号：US06747301B1
公开(公告)日：2004-06-08
申请号：US10071798
申请日：2002-02-06
申请人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
发明人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01F10/3286 , H01L27/226
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
摘要翻译：公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

2. 发明授权

US06639291B1 Spin dependent tunneling barriers doped with magnetic particles 有权
标题翻译：掺杂有磁性颗粒的自旋相关隧道势垒
公开(公告)号：US06639291B1
公开(公告)日：2003-10-28
申请号：US10071796
申请日：2002-02-06
申请人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
发明人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
IPC分类号： H01L2972
CPC分类号： H01L27/226 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L29/66984 , H01L43/08
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
摘要翻译：公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。增加隧道屏障的厚度可以提高制造成本，例如提高产量。

3. 发明授权

US07110289B1 Method and system for controlling MRAM write current to reduce power consumption 有权
标题翻译：用于控制MRAM写入电流以减少功耗的方法和系统
公开(公告)号：US07110289B1
公开(公告)日：2006-09-19
申请号：US10816271
申请日：2004-03-31
申请人： Kyusik Sin , Hugh Craig Hiner , Xizeng (Stone) Shi , William D. Jensen , Hua-Ching Tong , Matthew R Gibbons , Roberto Bez , Giulio Casagrande , Paolo Cappeletti , Marco Pasotti
发明人： Kyusik Sin , Hugh Craig Hiner , Xizeng (Stone) Shi , William D. Jensen , Hua-Ching Tong , Matthew R Gibbons , Roberto Bez , Giulio Casagrande , Paolo Cappeletti , Marco Pasotti
IPC分类号： G11C11/15
CPC分类号： G11C11/15
摘要： In a method and system for reducing power consumed by a magnetic memory, magnetic memory cells are coupled to a bit line and are associated with a plurality of digit lines. A bit line current is provided in the bit line. Digit currents are provided in parallel in the digit lines at substantially the same time as the bit line current. The digit and bit line currents allow the magnetic memory cells to be written to a plurality of states in parallel.
摘要翻译：在用于减少由磁存储器消耗的功率的方法和系统中，磁存储器单元耦合到位线并与多个数字线相关联。位线中提供位线电流。与位线电流基本相同的时刻，在数字线中并联提供数字电流。数字和位线电流允许磁存储单元被并行写入多个状态。

4. 发明授权

US06809899B1 Magnetic heads for perpendicular recording with trapezoidal pole tips 有权
标题翻译：用于垂直记录的梯形磁极头
公开(公告)号：US06809899B1
公开(公告)日：2004-10-26
申请号：US10751215
申请日：2003-12-31
申请人： Yingjian Chen , Yugang Wang , Francis Liu , Xizeng Shi , Kyusik Sin , Hugh Craig Hiner
发明人： Yingjian Chen , Yugang Wang , Francis Liu , Xizeng Shi , Kyusik Sin , Hugh Craig Hiner
IPC分类号： G11B5147
CPC分类号： G11B5/1278 , Y10S977/934
摘要： Electromagnetic transducers are disclosed having write poles with a leading edge that is smaller than a trailing edge, which can reduce erroneous writing for perpendicular recording systems. The write poles may have a trapezoidal shape when viewed from a direction of an associated medium. The write poles may be incorporated in heads or sliders that also contain read elements such as magnetoresistive sensors, and may be employed with information storage systems such as disk drives.
摘要翻译：公开了具有写入极的电磁换能器，其前缘小于后缘，这可以减少用于垂直记录系统的错误写入。当从相关联的介质的方向观察时，写入极可以具有梯形形状。写入极可以并入还包含诸如磁阻传感器的读取元件的磁头或滑块中，并且可以用于诸如磁盘驱动器的信息存储系统。

5. 发明授权

US06803615B1 Magnetic tunnel junction MRAM with improved stability 有权
标题翻译：磁隧道结MRAM具有改善的稳定性
公开(公告)号：US06803615B1
公开(公告)日：2004-10-12
申请号：US10020663
申请日：2001-12-14
申请人： Kyusik Sin , Xizeng Shi , Hugh Craig Hiner
发明人： Kyusik Sin , Xizeng Shi , Hugh Craig Hiner
IPC分类号： H01L2976
CPC分类号： G11C11/16 , H01L27/228 , H01L43/08
摘要： An MRAM cell includes a pinned layer, a free layer, and a bit line with a magnetic sheath. The magnetic sheath allows a magnetic field to circulate in a loop around the bit line. The looping magnetic field can couple with the magnetic field of the free layer for enhanced stability with respect to stray magnetic fields and elevated temperatures.
摘要翻译： MRAM单元包括钉扎层，自由层和具有磁性护套的位线。磁性护套允许磁场围绕位线循环循环。环形磁场可以与自由层的磁场耦合，以增强相对于杂散磁场和升高的温度的稳定性。

6. 发明授权

US06785955B1 Method for providing pedestal-defined zero throat writer 失效
标题翻译：提供基座定义零喉作家的方法
公开(公告)号：US06785955B1
公开(公告)日：2004-09-07
申请号：US09769060
申请日：2001-01-23
申请人： Yingjian Chen , Hugh Craig Hiner , Benjamin Chen , Xizeng Shi , Kyusik Sin
发明人： Yingjian Chen , Hugh Craig Hiner , Benjamin Chen , Xizeng Shi , Kyusik Sin
IPC分类号： H04R3100
CPC分类号： G11B5/3967 , G11B5/3109 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052 , Y10T29/49062
摘要： A method and system for providing a writer is disclosed. The method and system include providing a first pole, an insulator covering a portion of the first pole and a coil on the first insulator. The coil includes a plurality of turns. The method and system also include providing a second insulator covering the coil, providing a second pole on the second insulator and providing a write gap separating a portion of the first pole from a second portion of the second pole. A first portion of the second pole is coupled with the first pole. In one aspect, the method and system include providing a coil having a plurality of turns with a pitch of no more than 1.2 micrometers. In another aspect, the plurality of turns of the coil is provided using a hard mask layer on a photoresist layer. A portion of the hard mask layer and a portion of the photoresist layer define a plurality of spaces between the pluralities of turns of the coil. In another aspect, the writer is a pedestal defined zero throat writer. In this aspect, the first insulator has a depression therein and the coil is provided on the depression.
摘要翻译：公开了一种用于提供写入器的方法和系统。该方法和系统包括提供第一极，覆盖第一极的一部分的绝缘体和第一绝缘体上的线圈。线圈包括多个匝。该方法和系统还包括提供覆盖线圈的第二绝缘体，在第二绝缘体上提供第二极，并提供将第一极的一部分与第二极的第二部分分开的写间隙。第二极的第一部分与第一极耦合。在一个方面，该方法和系统包括提供具有不超过1.2微米的间距的多个匝的线圈。在另一方面，使用光致抗蚀剂层上的硬掩模层来提供线圈的多圈。硬掩模层的一部分和光致抗蚀剂层的一部分在线圈的多圈之间限定多个空间。在另一方面，作者是一个基座定义的零喉作家。在这方面，第一绝缘体具有凹陷，线圈设置在凹部上。

7. 发明授权

US07012832B1 Magnetic memory cell with plural read transistors 有权
标题翻译：具有多个读取晶体管的磁存储单元
公开(公告)号：US07012832B1
公开(公告)日：2006-03-14
申请号：US10698747
申请日：2003-10-31
申请人： Kyusik Sin , Matthew R. Gibbons , William D. Jensen , Hugh Craig Hiner , Xizeng Stone Shi , Roberto Bez , Giulio Casagrande , Paolo Cappelletti
发明人： Kyusik Sin , Matthew R. Gibbons , William D. Jensen , Hugh Craig Hiner , Xizeng Stone Shi , Roberto Bez , Giulio Casagrande , Paolo Cappelletti
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic random access memory (MRAM) device has increased ΔR/R for sensing a state of a pin-dependent tunneling (SDT) device. The MRAM device includes plural transistors connected to a read line for sensing the state of the SDT device. Plural transistors lower an underlying resistance during reading, increasing ΔR/R. The plural transistors can share a source region.
摘要翻译：磁性随机存取存储器（MRAM）器件增加了用于感测引脚依赖隧道（SDT）器件的状态的DeltaR / R。 MRAM器件包括连接到读取线的多个晶体管，用于感测SDT器件的状态。多个晶体管在读取期间降低潜在电阻，增加DeltaR / R。多个晶体管可以共享源极区域。

8. 发明授权

US06721138B1 Inductive transducer with stitched pole tip and pedestal defining zero throat height 有权
标题翻译：具有缝合极尖和底座的感应传感器，定义零喉部高度
公开(公告)号：US06721138B1
公开(公告)日：2004-04-13
申请号：US09999694
申请日：2001-10-24
申请人： Yingjian Chen , Xizeng Shi , Hugh Craig Hiner , Zi-Wen Dong , Francis Liu , Matthew R. Gibbons , Joyce Anne Thompson , William D. Jensen , Chester Xiaowen Chien , Yugang Wang
发明人： Yingjian Chen , Xizeng Shi , Hugh Craig Hiner , Zi-Wen Dong , Francis Liu , Matthew R. Gibbons , Joyce Anne Thompson , William D. Jensen , Chester Xiaowen Chien , Yugang Wang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3146 , G11B5/3153 , G11B5/3163 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： An inductive transducer having first and second magnetic pedestals disposed between first and second magnetic pole layers and adjacent to a media-facing surface, the pedestals separated by a submicron, nonmagnetic gap. The first pedestal extends less than the second pedestal from the media-facing surface, defining a short throat height. The second pedestal extends further to provide sufficient area for stitching to the second pole layer. The stitching and the thickness provided by the pedestals allow plural coil layers to be disposed between the pole layers, and the second pedestal, as well as other features, can be defined by high-resolution photolithography. The two coil layers have lower resistance, lower inductance and allow the pole layers to be shorter, improving performance. All or part of either or both of the pedestals may be formed of high magnetic saturation material, further enhancing performance.
摘要翻译：一种感应换能器，其具有设置在第一和第二磁极层之间并且邻近介质面向表面的第一和第二磁性基座，所述基座由亚微米非磁性间隙分开。第一基座从面向介质的表面延伸小于第二基座，限定短的喉部高度。第二基座进一步延伸以提供足够的面积用于缝合到第二极层。由基座提供的缝合和厚度允许在极层之间设置多个线圈层，并且第二基座以及其它特征可以通过高分辨率光刻来定义。两个线圈层具有较低的电阻，较低的电感，并允许极层更短，从而提高性能。基座中的一个或两个的全部或一部分可以由高磁饱和材料形成，进一步提高性能。

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