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1. 发明授权

US06888184B1 Shielded magnetic ram cells 有权
标题翻译：屏蔽磁性柱塞电池
公开(公告)号：US06888184B1
公开(公告)日：2005-05-03
申请号：US10074394
申请日：2002-02-11
申请人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
发明人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
IPC分类号： G11C11/16 , H01L21/336 , H01L27/22
CPC分类号： G11C11/16 , H01L27/222
摘要： A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.
摘要翻译：公开了一种在半导体衬底上制造的磁存储器。该方法和系统包括多个磁性隧道结和用于磁屏蔽多个磁性隧道结的多个屏蔽。多个磁隧道结中的每一个包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。多个屏蔽件的至少一部分具有高的力矩和高的磁导率并且是导电的。多个屏蔽件与多个磁性隧道结电隔离。多个磁隧道结在多个屏蔽之间。

2. 发明授权

US06747301B1 Spin dependent tunneling barriers formed with a magnetic alloy 有权
标题翻译：由磁性合金形成的自旋依赖隧道屏障
公开(公告)号：US06747301B1
公开(公告)日：2004-06-08
申请号：US10071798
申请日：2002-02-06
申请人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
发明人： Hugh Craig Hiner , Kyusik Sin , Shin Funada , Xizeng Shi , Hua-Ching Tong
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3213 , H01F10/324 , H01F10/3254 , H01F10/3286 , H01L27/226
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.
摘要翻译：公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

3. 发明授权

US06639291B1 Spin dependent tunneling barriers doped with magnetic particles 有权
标题翻译：掺杂有磁性颗粒的自旋相关隧道势垒
公开(公告)号：US06639291B1
公开(公告)日：2003-10-28
申请号：US10071796
申请日：2002-02-06
申请人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
发明人： Kyusik Sin , Shin Funada , Hugh Craig Hiner , Hua-Ching Tong , Xizeng Shi
IPC分类号： H01L2972
CPC分类号： H01L27/226 , B82Y25/00 , G01R33/093 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L29/66984 , H01L43/08
摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
摘要翻译：公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。增加隧道屏障的厚度可以提高制造成本，例如提高产量。

4. 发明授权

US06707083B1 Magnetic tunneling junction with improved power consumption 有权
标题翻译：磁隧道结，具有改善的功耗
公开(公告)号：US06707083B1
公开(公告)日：2004-03-16
申请号：US10192458
申请日：2002-07-09
申请人： Hugh C. Hiner , Kyusik Sin , Matthew Gibbons , Xizeng Shi
发明人： Hugh C. Hiner , Kyusik Sin , Matthew Gibbons , Xizeng Shi
IPC分类号： H01L31119
CPC分类号： G11C11/16 , H01L27/222
摘要： A method and system for providing a magnetic tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to a bit line. The bit line includes a ferromagnetic liner and a nonmagnetic core. The nonmagnetic core includes a top, a bottom and sides. The ferromagnetic liner includes at least one tab and is adjacent to the sides and a portion of the bottom of the nonmagnetic core. The at least one tab is adjacent to the portion of the bottom of the nonmagnetic core.
摘要翻译：公开了一种用于提供磁隧道结的方法和系统。该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。自由层和钉扎层是铁磁性的。阻挡层是绝缘体。磁隧道结耦合到位线。位线包括铁磁衬垫和非磁性芯。非磁性芯包括顶部，底部和侧面。铁磁衬垫包括至少一个突片，并且与非磁性芯的侧面和底部的一部分相邻。至少一个突片邻近非磁性芯的底部的部分。

5. 发明授权

US06713801B1 &agr;-tantalum lead for use with magnetic tunneling junctions 失效
标题翻译：用于磁性隧道结的α-钽铅
公开(公告)号：US06713801B1
公开(公告)日：2004-03-30
申请号：US10192430
申请日：2002-07-09
申请人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3254 , H01F41/302 , H01L27/222
摘要： A method and system for providing a tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to an &agr;-Ta lead.
摘要翻译：公开了一种用于提供隧道结的方法和系统。该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。自由层和钉扎层是铁磁性的。阻挡层是绝缘体。磁性隧道结与α-Ta引线耦合。

6. 发明授权

US06744608B1 Method and system for making TMR junctions 有权
标题翻译：制造TMR结的方法和系统
公开(公告)号：US06744608B1
公开(公告)日：2004-06-01
申请号：US10146517
申请日：2002-05-14
申请人： Kyusik Sin , Kristian M. Bjelland , Benjamin Chen , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Kristian M. Bjelland , Benjamin Chen , Hugh C. Hiner , Xizeng Shi
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0.2 &mgr;m.
摘要翻译：公开了一种用于提供隧道磁阻传感器的方法和系统。该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和绝缘层。固定和自由层是铁磁性的。该方法和系统还包括提供用于在隧道磁阻传感器的顶部限定传感器的硬掩模层。该方法和系统还包括使用硬掩模层来定义隧道磁阻传感器。因此，被钉扎层，自由层和绝缘层能够具有小于0.2μm的最小尺寸。

7. 发明授权

US07007372B1 Method for making high speed, high areal density inductive write structure 失效
标题翻译：制造高速，高密度感应写入结构的方法
公开(公告)号：US07007372B1
公开(公告)日：2006-03-07
申请号：US10656311
申请日：2003-09-05
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高B sat sat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括一高层高层材料的薄层（也优选具有CoZrCr叠层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料构成，例如Ni -Fe合金。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

8. 发明授权

US06683763B1 Method and system for providing a self-aligned electrical contact for a TMR element 失效
标题翻译：用于为TMR元件提供自对准电接触的方法和系统
公开(公告)号：US06683763B1
公开(公告)日：2004-01-27
申请号：US09990738
申请日：2001-11-21
申请人： Hugh C. Hiner , Kyusik Sin , William Jensen , Xizeng Shi
发明人： Hugh C. Hiner , Kyusik Sin , William Jensen , Xizeng Shi
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/06 , G11B5/3909 , H01F10/3254 , H01F41/308 , H01L43/12
摘要： A method and structure for providing a tunneling magnetoresistive (TMR) element is disclosed. The method and structure include providing a TMR layer that includes a first magnetic layer, a second magnetic layer and a first insulating layer disposed between the first magnetic layer and the second magnetic layer. The method and structure also include providing a first material and a protective layer. The first material allows electrical contact to be made to the tunneling magnetoresistive layer and is disposed above the tunneling magnetoresistive layer. The first material is capable of being undercut by an plasma etch without exposing a portion of the tunneling magnetoresistive layer under a remaining portion of the first material. The second protective layer covers a portion of the tunneling magnetoresistive sensor and a portion of the first material. In one aspect, the method and structure also include providing a second material disposed between the tunneling magnetoresistive layer and the first material. The second material allows electrical contact to be made to the tunneling magnetoresistive layer and is resistant to removal by the plasma etch.
摘要翻译：公开了一种用于提供隧道磁阻（TMR）元件的方法和结构。该方法和结构包括提供包括第一磁性层，第二磁性层和设置在第一磁性层和第二磁性层之间的第一绝缘层的TMR层。该方法和结构还包括提供第一材料和保护层。第一材料允许对隧道磁阻层进行电接触并且设置在隧道磁阻层之上。第一种材料能够通过等离子体蚀刻而被切割，而不会在隧道磁阻层的一部分暴露在第一材料的剩余部分之下。第二保护层覆盖隧道磁阻传感器的一部分和第一材料的一部分。一方面，该方法和结构还包括提供设置在隧道磁阻层和第一材料之间的第二材料。第二种材料允许对隧道磁阻层进行电接触，并且耐受等离子体蚀刻的去除。

9. 发明授权

US06785955B1 Method for providing pedestal-defined zero throat writer 失效
标题翻译：提供基座定义零喉作家的方法
公开(公告)号：US06785955B1
公开(公告)日：2004-09-07
申请号：US09769060
申请日：2001-01-23
申请人： Yingjian Chen , Hugh Craig Hiner , Benjamin Chen , Xizeng Shi , Kyusik Sin
发明人： Yingjian Chen , Hugh Craig Hiner , Benjamin Chen , Xizeng Shi , Kyusik Sin
IPC分类号： H04R3100
CPC分类号： G11B5/3967 , G11B5/3109 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052 , Y10T29/49062
摘要： A method and system for providing a writer is disclosed. The method and system include providing a first pole, an insulator covering a portion of the first pole and a coil on the first insulator. The coil includes a plurality of turns. The method and system also include providing a second insulator covering the coil, providing a second pole on the second insulator and providing a write gap separating a portion of the first pole from a second portion of the second pole. A first portion of the second pole is coupled with the first pole. In one aspect, the method and system include providing a coil having a plurality of turns with a pitch of no more than 1.2 micrometers. In another aspect, the plurality of turns of the coil is provided using a hard mask layer on a photoresist layer. A portion of the hard mask layer and a portion of the photoresist layer define a plurality of spaces between the pluralities of turns of the coil. In another aspect, the writer is a pedestal defined zero throat writer. In this aspect, the first insulator has a depression therein and the coil is provided on the depression.
摘要翻译：公开了一种用于提供写入器的方法和系统。该方法和系统包括提供第一极，覆盖第一极的一部分的绝缘体和第一绝缘体上的线圈。线圈包括多个匝。该方法和系统还包括提供覆盖线圈的第二绝缘体，在第二绝缘体上提供第二极，并提供将第一极的一部分与第二极的第二部分分开的写间隙。第二极的第一部分与第一极耦合。在一个方面，该方法和系统包括提供具有不超过1.2微米的间距的多个匝的线圈。在另一方面，使用光致抗蚀剂层上的硬掩模层来提供线圈的多圈。硬掩模层的一部分和光致抗蚀剂层的一部分在线圈的多圈之间限定多个空间。在另一方面，作者是一个基座定义的零喉作家。在这方面，第一绝缘体具有凹陷，线圈设置在凹部上。

10. 发明授权

US06618223B1 High speed, high areal density inductive writer 失效
标题翻译：高速，高密度感应写入器
公开(公告)号：US06618223B1
公开(公告)日：2003-09-09
申请号：US09617791
申请日：2000-07-18
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5147
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高Bsat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括具有高Bsat材料的薄内层（还优选具有CoZrCr层压层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料如Ni-Fe合金构成。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

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