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1. 发明授权

US09739580B1 Ammunition cartridge 有权
公开(公告)号：US09739580B1
公开(公告)日：2017-08-22
申请号：US15048105
申请日：2016-02-19
申请人： Gould Gibbons, III , Ronald Sebeck, Jr. , Andrew Gibbons , Matthew Gibbons
发明人： Gould Gibbons, III , Ronald Sebeck, Jr. , Andrew Gibbons , Matthew Gibbons
IPC分类号： F42B5/02 , F42B5/26
CPC分类号： F42B5/025 , F42B5/26
摘要： Ammunition cartridges for hunting big game with an AR15 rifle are provided while maintaining a size of the ammunition cartridge that permits multiple ammunition cartridges to be inserted into an AR15 rifle magazine in alternating side by side relation. Each cartridge has a rim diameter of 0.422 inches, extractor groove and a slight tapered main body base of 0.36°. In one embodiment, the main base body extends to form a cartridge with total length of 1.8 inches and nominal body taper of 0.020 inches to accept a bullet with a diameter of 0.400 inches. In other embodiments, the main body base extends to a shoulder and a neck to form a cartridge with a total length of 1.66 inches. The shoulder tapers to the neck at a 35° angle with a nominal body taper of 0.014 inches. These embodiments accept bullets with diameters of 0.277, 0.284 and 0.308 inches.

2. 发明申请

US20060254032A1 Silencer plating for fasteners 有权
标题翻译：紧固件消声器电镀
公开(公告)号：US20060254032A1
公开(公告)日：2006-11-16
申请号：US11399672
申请日：2006-04-06
申请人： Matthew Gibbons , Terrence MacPherson
发明人： Matthew Gibbons , Terrence MacPherson
IPC分类号： E04F19/02
CPC分类号： B60R13/0206 , B60N3/026 , B60R13/0815 , F16B5/0657 , F16B21/075 , Y10T24/30 , Y10T24/307
摘要： A fastener to removably mount an object in a mounting aperture of a panel is provided. The fastener includes a body having two opposing side members and defining a second aperture configured to accept at least a portion of the object, at least one elastic abutting flange disposed between the fastener body and the mounting aperture, a corrosion resistant coating, and a silencer plating overlying the corrosion resistant coating.
摘要翻译：提供了一种用于可拆卸地将物体安装在面板的安装孔中的紧固件。紧固件包括具有两个相对的侧部构件并且限定构造成容纳物体的至少一部分的第二孔的主体，设置在紧固件主体和安装孔之间的至少一个弹性邻接凸缘，耐腐蚀涂层和消音器电镀覆盖在耐腐蚀涂层上。

3. 发明授权

US06829160B1 Magnetic ram cell with amplification circuitry and MRAM memory array formed using the MRAM cells 有权
标题翻译：具有放大电路的磁性脉冲电池和使用MRAM单元形成的MRAM存储器阵列
公开(公告)号：US06829160B1
公开(公告)日：2004-12-07
申请号：US10079116
申请日：2002-02-20
申请人： Quiqun (Kevin) Qi , Xizeng (Stone) Shi , Matthew Gibbons
发明人： Quiqun (Kevin) Qi , Xizeng (Stone) Shi , Matthew Gibbons
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： A magnetic random access memory (MRAM) cell and a memory array formed from the MRAM cells are disclosed. The MRAM cell includes a magnetic tunneling junction and a transistor. The magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The gate of the transistor is coupled to a first end of the magnetic tunneling junction. The source of the transistor is coupled to a second end the magnetic tunneling junction. The drain of the transistor is coupled with an output for reading the magnetic memory cell. During reading, a read current is applied to the magnetic tunneling junction and the transistor is preferably operated in a saturation region.
摘要翻译：公开了一种磁性随机存取存储器（MRAM）单元和由MRAM单元形成的存储器阵列。 MRAM单元包括磁隧道结和晶体管。磁隧道结包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。晶体管的栅极耦合到磁隧道结的第一端。晶体管的源极耦合到磁隧道结的第二端。晶体管的漏极与用于读取磁存储单元的输出端相连。在读取期间，将读取电流施加到磁性隧道结，并且晶体管优选地在饱和区域中操作。

4. 发明授权

US09739553B1 Muzzle loading conversion system for a rifle 有权
公开(公告)号：US09739553B1
公开(公告)日：2017-08-22
申请号：US15189227
申请日：2016-06-22
申请人： Gould Gibbons, III , Ronald G. Sebeck, Jr. , Andrew Gibbons , Matthew Gibbons
发明人： Gould Gibbons, III , Ronald G. Sebeck, Jr. , Andrew Gibbons , Matthew Gibbons
IPC分类号： F41C27/00 , F41A11/02 , F41A3/66 , F41C9/08 , F41C7/00
CPC分类号： F41A11/02 , F41A3/26 , F41A3/66 , F41C7/00 , F41C9/08
摘要： A muzzle loading conversion system for a rifle having an upper and lower receiver. A barrel is slidingly secured to the upper receiver. A stationary bolt member is positioned within the upper receiver with a firing pin slidably received within a bolt opening. A breech plug mechanism is threadedly secured to the barrel within a barrel end section and the breech plug mechanism is adapted to receive a primer within a breech plug mechanism chamber which is in fluid communication with the bolt through opening. The breech plug mechanism is engaged with the bolt member within a breech plug member receiving chamber.

5. 发明授权

US06707083B1 Magnetic tunneling junction with improved power consumption 有权
标题翻译：磁隧道结，具有改善的功耗
公开(公告)号：US06707083B1
公开(公告)日：2004-03-16
申请号：US10192458
申请日：2002-07-09
申请人： Hugh C. Hiner , Kyusik Sin , Matthew Gibbons , Xizeng Shi
发明人： Hugh C. Hiner , Kyusik Sin , Matthew Gibbons , Xizeng Shi
IPC分类号： H01L31119
CPC分类号： G11C11/16 , H01L27/222
摘要： A method and system for providing a magnetic tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to a bit line. The bit line includes a ferromagnetic liner and a nonmagnetic core. The nonmagnetic core includes a top, a bottom and sides. The ferromagnetic liner includes at least one tab and is adjacent to the sides and a portion of the bottom of the nonmagnetic core. The at least one tab is adjacent to the portion of the bottom of the nonmagnetic core.
摘要翻译：公开了一种用于提供磁隧道结的方法和系统。该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。自由层和钉扎层是铁磁性的。阻挡层是绝缘体。磁隧道结耦合到位线。位线包括铁磁衬垫和非磁性芯。非磁性芯包括顶部，底部和侧面。铁磁衬垫包括至少一个突片，并且与非磁性芯的侧面和底部的一部分相邻。至少一个突片邻近非磁性芯的底部的部分。

6. 发明授权

US06421212B1 Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication 有权
公开(公告)号：US06421212B1
公开(公告)日：2002-07-16
申请号：US09400205
申请日：1999-09-21
申请人： Matthew Gibbons , Kenneth E. Knapp , Ronald A. Barr , Benjamin P. Law , James Spallas , Ming Zhao
发明人： Matthew Gibbons , Kenneth E. Knapp , Ronald A. Barr , Benjamin P. Law , James Spallas , Ming Zhao
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer. In CIP and CPP embodiments, tapered portions of the bias material, which form overhanging the MR element, are removed by directional etching to improve the direction and stability of the induced longitudinal field within the MR element. In some CIP embodiments, tapered overhang removal allows for formation of improved lead structures, which may be deposited on the MR element closer to the side walls, and which are not pinched off by the overhang of an underlying bias layer, thus improving current density profile and definition of the actual effective track width of the device.

7. 发明授权

US06888184B1 Shielded magnetic ram cells 有权
标题翻译：屏蔽磁性柱塞电池
公开(公告)号：US06888184B1
公开(公告)日：2005-05-03
申请号：US10074394
申请日：2002-02-11
申请人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
发明人： Xizeng Shi , Matthew Gibbons , Hua-Ching Tong , Kyusik Sin
IPC分类号： G11C11/16 , H01L21/336 , H01L27/22
CPC分类号： G11C11/16 , H01L27/222
摘要： A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.
摘要翻译：公开了一种在半导体衬底上制造的磁存储器。该方法和系统包括多个磁性隧道结和用于磁屏蔽多个磁性隧道结的多个屏蔽。多个磁隧道结中的每一个包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的绝缘层。多个屏蔽件的至少一部分具有高的力矩和高的磁导率并且是导电的。多个屏蔽件与多个磁性隧道结电隔离。多个磁隧道结在多个屏蔽之间。

8. 发明授权

US06487056B1 Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication 有权
标题翻译：具有改进的偏置磁体与磁阻元件接口和制造方法的薄膜读取头结构
公开(公告)号：US06487056B1
公开(公告)日：2002-11-26
申请号：US10153067
申请日：2002-05-20
申请人： Matthew Gibbons , Kenneth E. Knapp , Ronald A. Barr , Benjamin P. Law , James Spallas , Ming Zhao
发明人： Matthew Gibbons , Kenneth E. Knapp , Ronald A. Barr , Benjamin P. Law , James Spallas , Ming Zhao
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer. In CIP and CPP embodiments, tapered portions of the bias material, which form overhanging the MR element, are removed by directional etching to improve the direction and stability of the induced longitudinal field within the MR element. In some CIP embodiments, tapered overhang removal allows for formation of improved lead structures, which may be deposited on the MR element closer to the side walls, and which are not pinched off by the overhang of an underlying bias layer, thus improving current density profile and definition of the actual effective track width of the device.
摘要翻译：本发明提供一种改进的偏置磁体 - 磁阻元件接口和制造方法。在优选实施例中，通过过蚀刻形成与偏置层相对的MR元件的壁/壁，以提供没有锥度的垂直侧壁。在优选实施例中，在MR元件上形成保护元件以在蚀刻工艺期间保护元件。在一些实施方案中，在形成偏压层之前沉积填料层。在CIP实施例中，蚀刻形成在MR元件的垂直侧壁上的填充层的任何部分，以提供暴露的侧壁表面用于连续的偏置层形成。在CPP实施例中，填充层在垂直后壁上形成，并使MR元件与偏置层电绝缘。在CIP和CPP实施例中，通过定向蚀刻去除形成悬垂在MR元件上的倾斜材料的锥形部分，以改善MR元件内的感应纵向场的方向和稳定性。在一些CIP实施例中，锥形突出去除允许形成改进的引线结构，其可以沉积在更靠近侧壁的MR元件上，并且不被下伏偏置层的突出部分夹住，因此改善电流密度分布以及设备的实际有效轨迹宽度的定义。

9. 发明授权

US06735850B1 Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication 有权
标题翻译：具有改进的偏置磁体与磁阻元件接口和制造方法的薄膜读取头结构
公开(公告)号：US06735850B1
公开(公告)日：2004-05-18
申请号：US10152909
申请日：2002-05-20
申请人： Matthew Gibbons , Kenneth E. Knapp , Ronald A. Barr , Benjamin P. Law , James Spallas , Ming Zhao
发明人： Matthew Gibbons , Kenneth E. Knapp , Ronald A. Barr , Benjamin P. Law , James Spallas , Ming Zhao
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer. In CIP and CPP embodiments, tapered portions of the bias material, which form overhanging the MR element, are removed by directional etching to improve the direction and stability of the induced longitudinal field within the MR element. In some CIP embodiments, tapered overhang removal allows for formation of improved lead structures, which may be deposited on the MR element closer to the side walls, and which are not pinched off by the overhang of an underlying bias layer, thus improving current density profile and definition of the actual effective track width of the device.
摘要翻译：本发明提供一种改进的偏置磁体 - 磁阻元件接口和制造方法。在优选实施例中，通过过蚀刻形成与偏置层相对的MR元件的壁/壁，以提供没有锥度的垂直侧壁。在优选实施例中，在MR元件上形成保护元件以在蚀刻工艺期间保护元件。在一些实施方案中，在形成偏压层之前沉积填料层。在CIP实施例中，蚀刻形成在MR元件的垂直侧壁上的填充层的任何部分，以提供暴露的侧壁表面用于连续的偏置层形成。在CPP实施例中，填充层在垂直后壁上形成，并使MR元件与偏置层电绝缘。在CIP和CPP实施例中，通过定向蚀刻去除形成悬垂在MR元件上的倾斜材料的锥形部分，以改善MR元件内的感应纵向场的方向和稳定性。在一些CIP实施例中，锥形突出去除允许形成改进的引线结构，其可以沉积在更靠近侧壁的MR元件上，并且不被下伏偏置层的突出部分夹住，因此改善电流密度分布以及设备的实际有效轨迹宽度的定义。

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