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1. 发明授权

US08728825B2 GMR sensor stripe for a biosensor with enhanced sensitivity 有权
标题翻译： GMR传感器条带用于具有增强灵敏度的生物传感器
公开(公告)号：US08728825B2
公开(公告)日：2014-05-20
申请号：US13417398
申请日：2012-03-12
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N27/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响磁层的磁致伸缩产生补偿横向磁各向异性。通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

2. 发明授权

US07499314B2 Reference cell scheme for MRAM 有权
标题翻译： MRAM参考单元方案
公开(公告)号：US07499314B2
公开(公告)日：2009-03-03
申请号：US12002161
申请日：2007-12-14
申请人： Hsu Kai Yang , Po-Kang Wang , Xizeng Shi
发明人： Hsu Kai Yang , Po-Kang Wang , Xizeng Shi
IPC分类号： G11C11/00
CPC分类号： G11C7/14 , G11C11/16
摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.
摘要翻译： MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。位线与子阵列的每一列相关联。耦合将位列对的位线连接到读出放大器的近端位置。一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。讨论了一种用于验证MRAM参考子阵列的编程的方法。

3. 发明授权

US07394123B2 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US07394123B2
公开(公告)日：2008-07-01
申请号：US11438179
申请日：2006-05-22
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。因此，线和无细胞层之间存在均匀的间隔。

4. 发明授权

US07321507B2 Reference cell scheme for MRAM 有权
公开(公告)号：US07321507B2
公开(公告)日：2008-01-22
申请号：US11284299
申请日：2005-11-21
申请人： Hsu Kai Yang , Po-Kang Wang , Xizeng Shi
发明人： Hsu Kai Yang , Po-Kang Wang , Xizeng Shi
IPC分类号： G11C7/00
CPC分类号： G11C7/14 , G11C11/16
摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

5. 发明授权

US07123506B2 Method and system for performing more consistent switching of magnetic elements in a magnetic memory 失效
标题翻译：用于对磁存储器中的磁性元件进行更一致的切换的方法和系统
公开(公告)号：US07123506B2
公开(公告)日：2006-10-17
申请号：US10860902
申请日：2004-06-03
申请人： Xizeng Shi , Son Le , Po-Kang Wang , Tai Min
发明人： Xizeng Shi , Son Le , Po-Kang Wang , Tai Min
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.
摘要翻译：公开了一种用于编程磁存储器的方法和系统。该方法和系统还包括打开字线电流并打开位线电流。字线电流用于产生至少一个硬轴字段。位线电流用于产生至少一个易轴场。在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。另一方面，在位线电流关闭之后，字线电流被关断。

6. 发明授权

US07007372B1 Method for making high speed, high areal density inductive write structure 失效
标题翻译：制造高速，高密度感应写入结构的方法
公开(公告)号：US07007372B1
公开(公告)日：2006-03-07
申请号：US10656311
申请日：2003-09-05
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高B sat sat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括一高层高层材料的薄层（也优选具有CoZrCr叠层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料构成，例如Ni -Fe合金。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

7. 发明申请

US20060014306A1 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US20060014306A1
公开(公告)日：2006-01-19
申请号：US10892668
申请日：2004-07-16
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。由于制造工艺消除了在图案化和抛光期间通过CMP去除材料的必要性，因此在线和无细胞层之间产生均匀的间隔，因此由于较薄的沉积，实际上简化了具有这种细线的电池的制造。

8. 发明申请

US20050280960A1 Magnetic random access memory array with coupled soft adjacent magnetic layer 失效
公开(公告)号：US20050280960A1
公开(公告)日：2005-12-22
申请号：US11210637
申请日：2005-08-25
申请人： Yimin Guo , Tai Min , Pokang Wang , Xizeng Shi
发明人： Yimin Guo , Tai Min , Pokang Wang , Xizeng Shi
IPC分类号： A61K31/404 , C07D209/08 , G11C11/16 , H01L27/22 , H01L43/08 , G11B5/127
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

9. 发明申请

US20050276098A1 Method and system for providing common read and write word lines for a segmented word line MRAM array 失效
标题翻译：用于为分段字线MRAM阵列提供通用读写字线的方法和系统
公开(公告)号：US20050276098A1
公开(公告)日：2005-12-15
申请号：US10865722
申请日：2004-06-09
申请人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： B01F15/02 , G11C11/00 , G11C11/16
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.
摘要翻译：公开了一种用于提供包括与字线段相关联的磁存储单元的磁存储器的方法和系统。磁存储单元包括磁存储装置和隔离装置。隔离装置耦合到磁性隧道结，并具有用于读取和写入磁性存储器单元的组合字线。磁存储装置和隔离装置被配置成使得在写入磁存储单元期间不存在直接到地面的地面路径。一方面，在写入模式中，与字线段和字线段相关联的组合字线被激活。在读取模式中，使用组合字线来选择与字线段相关联的至少一部分存储单元。

10. 发明授权

US06713801B1 &agr;-tantalum lead for use with magnetic tunneling junctions 失效
标题翻译：用于磁性隧道结的α-钽铅
公开(公告)号：US06713801B1
公开(公告)日：2004-03-30
申请号：US10192430
申请日：2002-07-09
申请人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3254 , H01F41/302 , H01L27/222
摘要： A method and system for providing a tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to an &agr;-Ta lead.
摘要翻译：公开了一种用于提供隧道结的方法和系统。该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。自由层和钉扎层是铁磁性的。阻挡层是绝缘体。磁性隧道结与α-Ta引线耦合。

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