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1. 发明授权

US07764536B2 Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory 有权
标题翻译：提供感应放大器和驱动电路的自动转移转矩磁性随机存取存储器的方法和系统
公开(公告)号：US07764536B2
公开(公告)日：2010-07-27
申请号：US11834917
申请日：2007-08-07
申请人： Xiao Luo , David Chang-Cheng Yu
发明人： Xiao Luo , David Chang-Cheng Yu
IPC分类号： G11C11/00
CPC分类号： G11C11/1673 , G11C11/1659
摘要： A method and system for providing a magnetic memory are described. The method and system include a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Each magnetic storage cell includes magnetic element(s) and selection device(s). The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The bit and source lines correspond to the magnetic storage cells. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. The stages include first and second stages. The first stage converts at least current signal to at least one differential voltage signal. The second stage amplifies the at least one differential voltage signal. The logic selectively disables at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括多个磁存储单元，多个位线，至少一个参考线和至少一个读出放大器。每个磁存储单元包括磁性元件和选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。位线和源极线对应于磁存储单元。读出放大器与位线和参考线耦合，并且包括逻辑和多个级。阶段包括第一和第二阶段。第一级至少将电流信号转换为至少一个差分电压信号。第二级放大至少一个差分电压信号。在没有读取操作的情况下，逻辑选择性地禁用第一和第二级中的至少一个，并且在读取操作期间启用第一级和第二级。

2. 发明授权

US07894248B2 Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) 有权
标题翻译：基于磁隧道结（MTJ）的可编程冗余电路
公开(公告)号：US07894248B2
公开(公告)日：2011-02-22
申请号：US12210126
申请日：2008-09-12
申请人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
发明人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
IPC分类号： G11C11/00 , G11C17/00 , G11C17/02 , G11C11/14 , G11C17/18
CPC分类号： G11C11/1675 , G11C11/161
摘要： Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.
摘要翻译：基于磁阻或磁阻隧道结（MTJ）的技术，装置和电路。一方面，可编程电路装置可包括磁性隧道结（MTJ）; 耦合到MTJ的MTJ控制电路以控制MTJ在MTJ编程中引起MTJ中的故障; 以及耦合到MTJ以感测在MTJ的击穿情况下的电压的感测电路。

3. 发明申请

US20100067293A1 Programmable and Redundant Circuitry Based On Magnetic Tunnel Junction (MTJ) 有权
标题翻译：基于磁隧道结的可编程和冗余电路（MTJ）
公开(公告)号：US20100067293A1
公开(公告)日：2010-03-18
申请号：US12210126
申请日：2008-09-12
申请人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
发明人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
IPC分类号： G11C11/02
CPC分类号： G11C11/1675 , G11C11/161
摘要： Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.
摘要翻译：基于磁阻或磁阻隧道结（MTJ）的技术，装置和电路。一方面，可编程电路装置可包括磁性隧道结（MTJ）; 耦合到MTJ的MTJ控制电路以控制MTJ在MTJ编程中引起MTJ中的故障; 以及耦合到MTJ以感测在MTJ的击穿情况下的电压的感测电路。

4. 发明申请

US20090040855A1 METHOD AND SYSTEM FOR PROVIDING A SENSE AMPLIFIER AND DRIVE CIRCUIT FOR SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：用于提供感测放大器和驱动电路的方法和系统，用于旋转转矩磁性随机存取存储器
公开(公告)号：US20090040855A1
公开(公告)日：2009-02-12
申请号：US11834917
申请日：2007-08-07
申请人： Xiao Luo , David Chang-Cheng Yu
发明人： Xiao Luo , David Chang-Cheng Yu
IPC分类号： G11C7/00 , G11C11/06
CPC分类号： G11C11/1673 , G11C11/1659
摘要： A method and system for providing a magnetic memory are described. The method and system include a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Each magnetic storage cell includes magnetic element(s) and selection device(s). The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The bit and source lines correspond to the magnetic storage cells. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. The stages include first and second stages. The first stage converts at least current signal to at least one differential voltage signal. The second stage amplifies the at least one differential voltage signal. The logic selectively disablies at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括多个磁存储单元，多个位线，至少一个参考线和至少一个读出放大器。每个磁存储单元包括磁性元件和选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。位线和源极线对应于磁存储单元。读出放大器与位线和参考线耦合，并且包括逻辑和多个级。阶段包括第一和第二阶段。第一级至少将电流信号转换为至少一个差分电压信号。第二级放大至少一个差分电压信号。在没有读取操作的情况下，逻辑选择性地抵消第一级和第二级中的至少一级，并且在读取操作期间启用第一级和第二级。

5. 发明授权

US6134153A Bi-directional data bus scheme with optimized read and write characters 有权
标题翻译：具有优化读写字符的双向数据总线方案
公开(公告)号：US6134153A
公开(公告)日：2000-10-17
申请号：US364181
申请日：1999-07-29
申请人： Valerie Lines , Cynthia Mar , Xiao Luo , Sampei Miyamoto
发明人： Valerie Lines , Cynthia Mar , Xiao Luo , Sampei Miyamoto
IPC分类号： G11C7/10 , G11C7/00 , G11C8/00
CPC分类号： G11C7/1051 , G11C7/1048
摘要： A bi-directional global data bus scheme for use in a random access memory which optimizes the performance of the data path for read and write operations while offering a uniform read and write frequency to the external processor or controller is presented. The system makes use of a dual local data bus structure which allows the column address to change on every clock cycle since the two parallel local data paths are activated on alternate clock cycles and therefore operate at half the nominal operating frequency. For the read operation, the global data buses operate differentially at the nominal operating frequency. For the write operation, the global data buses operate at half the nominal operating frequency with each global data bus of a complementary data bus pair being dedicated to either one or the other local data paths for every other clock cycle. By implementing this scheme internally, a uniform read or write operating frequency is seen by the microprocessor, thereby simplifying its interface with the memory.
摘要翻译：提供了一种用于随机存取存储器的双向全局数据总线方案，其优化用于读取和写入操作的数据路径的性能，同时向外部处理器或控制器提供均匀的读取和写入频率。该系统利用双局部数据总线结构，其允许列地址在每个时钟周期上改变，因为两个并行的本地数据路径在交替时钟周期上被激活，因此以标称工作频率的一半工作。对于读操作，全局数据总线在标称工作频率下差分工作。对于写入操作，全局数据总线以额定工作频率的一半工作，互补数据总线对的每个全局数据总线专用于每隔一个时钟周期的一个或另一个本地数据路径。通过内部实现该方案，微处理器可以看到均匀的读或写操作频率，从而简化了与存储器的接口。

6. 发明授权

US07623369B2 Method and system for providing a magnetic memory structure utilizing spin transfer 有权
标题翻译：提供利用自旋转移的磁记忆体结构的方法和系统
公开(公告)号：US07623369B2
公开(公告)日：2009-11-24
申请号：US12030541
申请日：2008-02-13
申请人： Xiao Luo , Eugene Chen , Lien-Chang Wang , Yiming Huai
发明人： Xiao Luo , Eugene Chen , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C16/04
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。磁性元件由在第一和第二方向通过磁性元件驱动的第一和第二写入电流编程。局部字线与第一电阻率的选择装置连接。每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。位线与磁性元件连接。源极线与选择器件连接。每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

7. 发明授权

US5982674A Bi-directional data bus scheme with optimized read and write characters 有权
公开(公告)号：US5982674A
公开(公告)日：1999-11-09
申请号：US163341
申请日：1998-09-30
申请人： Valeria Lines , Cynthia Mar , Xiao Luo , Sampei Miyamoto
发明人： Valeria Lines , Cynthia Mar , Xiao Luo , Sampei Miyamoto
IPC分类号： G11C7/10 , G11C7/00 , G11C8/00
CPC分类号： G11C7/1051 , G11C7/1048
摘要： A bi-directional global data bus scheme for use in a random access memory which optimizes the performance of the data path for read and write operations while offering a uniform read and write frequency to the external processor or controller is presented. The system makes use of a dual local data bus structure which allows the column address to change on every clock cycle since the two parallel local data paths are activated on alternate clock cycles and therefore operate at half the nominal operating frequency. For the read operation, the global data buses operate differentially at the nominal operating frequency. For the write operation, the global data buses operate at half the nominal operating frequency with each global data bus of a complementary data bus pair being dedicated to either one or the other local data paths for every other clock cycle. By implementing this scheme internally, a uniform read or write operating frequency is seen by the microprocessor, thereby simplifying its interface with the memory.

8. 发明申请

US20070297223A1 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins 有权
标题翻译：利用具有增强的读和写余量的这样的单元使用自旋转移和磁存储的磁存储单元的电流驱动切换
公开(公告)号：US20070297223A1
公开(公告)日：2007-12-27
申请号：US11476171
申请日：2006-06-26
申请人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
发明人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

9. 发明申请

US20070279967A1 High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors 审中-公开
标题翻译：利用环形晶体管的自旋转移磁存储器的高密度磁存储单元布局
公开(公告)号：US20070279967A1
公开(公告)日：2007-12-06
申请号：US11436446
申请日：2006-05-18
申请人： Xiao Luo , Lien-Chang Wang
发明人： Xiao Luo , Lien-Chang Wang
IPC分类号： H01L29/76 , H01L29/94 , G11C11/00 , G11C11/14 , H01L31/00
CPC分类号： H01L27/228 , G11C11/16 , H01L29/4238
摘要： A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.
摘要翻译：描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。该方法和系统包括提供磁性元件并提供选择装置。磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。选择装置与磁性元件连接。选择装置包括其中具有孔的门。选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。

10. 发明授权

US08467891B2 Method and system for efficient optimization of audio sampling rate conversion 有权
标题翻译：音频采样率转换效率优化的方法和系统
公开(公告)号：US08467891B2
公开(公告)日：2013-06-18
申请号：US12356682
申请日：2009-01-21
申请人： Zhenhua Huang , Donald Edward Becker , Baohua Shu , Laigui Qin , Xiao Luo , Rongbin Qiu
发明人： Zhenhua Huang , Donald Edward Becker , Baohua Shu , Laigui Qin , Xiao Luo , Rongbin Qiu
IPC分类号： G06F17/00
CPC分类号： H03H17/0294 , H03H17/0621
摘要： A controller for outputting audio having a predetermined output sample rate. The controller is programmed to receive an audio signal having a first sample rate, identify the first sample rate of the audio signal, select a converter based on the identification of the first sample rate, and convert the sample rate of the received audio signal to the predetermined output sample rate.
摘要翻译：一种用于输出具有预定输出采样率的音频的控制器。控制器被编程为接收具有第一采样率的音频信号，识别音频信号的第一采样率，基于第一采样率的识别选择转换器，并将接收到的音频信号的采样率转换为预定输出采样率。

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