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1. 发明授权

US07764536B2 Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory 有权
标题翻译：提供感应放大器和驱动电路的自动转移转矩磁性随机存取存储器的方法和系统
公开(公告)号：US07764536B2
公开(公告)日：2010-07-27
申请号：US11834917
申请日：2007-08-07
申请人： Xiao Luo , David Chang-Cheng Yu
发明人： Xiao Luo , David Chang-Cheng Yu
IPC分类号： G11C11/00
CPC分类号： G11C11/1673 , G11C11/1659
摘要： A method and system for providing a magnetic memory are described. The method and system include a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Each magnetic storage cell includes magnetic element(s) and selection device(s). The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The bit and source lines correspond to the magnetic storage cells. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. The stages include first and second stages. The first stage converts at least current signal to at least one differential voltage signal. The second stage amplifies the at least one differential voltage signal. The logic selectively disables at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括多个磁存储单元，多个位线，至少一个参考线和至少一个读出放大器。每个磁存储单元包括磁性元件和选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。位线和源极线对应于磁存储单元。读出放大器与位线和参考线耦合，并且包括逻辑和多个级。阶段包括第一和第二阶段。第一级至少将电流信号转换为至少一个差分电压信号。第二级放大至少一个差分电压信号。在没有读取操作的情况下，逻辑选择性地禁用第一和第二级中的至少一个，并且在读取操作期间启用第一级和第二级。

2. 发明申请

US20090040855A1 METHOD AND SYSTEM FOR PROVIDING A SENSE AMPLIFIER AND DRIVE CIRCUIT FOR SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：用于提供感测放大器和驱动电路的方法和系统，用于旋转转矩磁性随机存取存储器
公开(公告)号：US20090040855A1
公开(公告)日：2009-02-12
申请号：US11834917
申请日：2007-08-07
申请人： Xiao Luo , David Chang-Cheng Yu
发明人： Xiao Luo , David Chang-Cheng Yu
IPC分类号： G11C7/00 , G11C11/06
CPC分类号： G11C11/1673 , G11C11/1659
摘要： A method and system for providing a magnetic memory are described. The method and system include a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Each magnetic storage cell includes magnetic element(s) and selection device(s). The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The bit and source lines correspond to the magnetic storage cells. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. The stages include first and second stages. The first stage converts at least current signal to at least one differential voltage signal. The second stage amplifies the at least one differential voltage signal. The logic selectively disablies at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括多个磁存储单元，多个位线，至少一个参考线和至少一个读出放大器。每个磁存储单元包括磁性元件和选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。位线和源极线对应于磁存储单元。读出放大器与位线和参考线耦合，并且包括逻辑和多个级。阶段包括第一和第二阶段。第一级至少将电流信号转换为至少一个差分电压信号。第二级放大至少一个差分电压信号。在没有读取操作的情况下，逻辑选择性地抵消第一级和第二级中的至少一级，并且在读取操作期间启用第一级和第二级。

3. 发明授权

US07894248B2 Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) 有权
标题翻译：基于磁隧道结（MTJ）的可编程冗余电路
公开(公告)号：US07894248B2
公开(公告)日：2011-02-22
申请号：US12210126
申请日：2008-09-12
申请人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
发明人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
IPC分类号： G11C11/00 , G11C17/00 , G11C17/02 , G11C11/14 , G11C17/18
CPC分类号： G11C11/1675 , G11C11/161
摘要： Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.
摘要翻译：基于磁阻或磁阻隧道结（MTJ）的技术，装置和电路。一方面，可编程电路装置可包括磁性隧道结（MTJ）; 耦合到MTJ的MTJ控制电路以控制MTJ在MTJ编程中引起MTJ中的故障; 以及耦合到MTJ以感测在MTJ的击穿情况下的电压的感测电路。

4. 发明申请

US20100067293A1 Programmable and Redundant Circuitry Based On Magnetic Tunnel Junction (MTJ) 有权
标题翻译：基于磁隧道结的可编程和冗余电路（MTJ）
公开(公告)号：US20100067293A1
公开(公告)日：2010-03-18
申请号：US12210126
申请日：2008-09-12
申请人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
发明人： David Chang-Cheng Yu , Xiao Luo , Jia-Hwang Chang
IPC分类号： G11C11/02
CPC分类号： G11C11/1675 , G11C11/161
摘要： Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.
摘要翻译：基于磁阻或磁阻隧道结（MTJ）的技术，装置和电路。一方面，可编程电路装置可包括磁性隧道结（MTJ）; 耦合到MTJ的MTJ控制电路以控制MTJ在MTJ编程中引起MTJ中的故障; 以及耦合到MTJ以感测在MTJ的击穿情况下的电压的感测电路。

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