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1. 发明授权

US4843358A Electrically positionable short-circuits 失效
标题翻译：电位置短路
公开(公告)号：US4843358A
公开(公告)日：1989-06-27
申请号：US211102
申请日：1988-06-20
申请人： William H. Meise , Arye Rosen , Paul J. Stabile
发明人： William H. Meise , Arye Rosen , Paul J. Stabile
IPC分类号： H01L29/423 , H01L29/78 , H01L29/868 , H01L45/02 , H01P1/185 , H01P1/20 , H01P1/28 , H01P7/00
CPC分类号： H01L45/02 , H01L29/42368 , H01L29/78 , H01L29/868 , H01P1/185 , H01P1/20 , H01P1/28 , H01P7/00
摘要： An electrical short-circuit for alternating-current (ac) microwave signals is physically positionable in direct response to an electrical bias control without an intermediary electromechanical converter. The electrically positionable short circuit includes at least first and second doped regions in a semiconductor, separated by a region in which the short circuit is formed between the doped regions by the bias. A first embodiment comprises discrete diodes connected between conductors at different locations, the discrete diodes having different forward junction voltages, so that varying the common bias voltage varies the number of conducting diodes and thus positions the short circuit in a stepwise manner. A FET embodiment includes various discrete MOSFETs having different conduction threshold voltages, and having their sources and drains connected at various points to the conductors to be short-circuited, so that variations of a common gate bias voltage selectively render one or more of the FETs conductive, thereby stepwise positioning the short-circuit. Distributed PIN and MOSFET structures provide continuous short circuit positioning as a monotonic function of bias. Two distinct modes of operation, pinchoff/resistive and a resistive/below-threshold are possible for the distributed FET embodiment. The electrically positionable short-circuit can be coupled to the conductors of a transmission line for effecting tuning, or can be coupled to a transmission line in such a way as to vary the signal path length and thereby provide phase shift.
摘要翻译：交流（ac）微波信号的电气短路可以直接响应于电偏压控制而物理定位，而无需中间机电转换器。电可定位短路包括在半导体中的至少第一和第二掺杂区域，由通过偏压在掺杂区域之间形成短路的区域分开。第一实施例包括连接在不同位置的导体之间的分立二极管，分立二极管具有不同的正向结电压，使得改变公共偏置电压改变导通二极管的数量，从而以逐步的方式定位短路。 FET实施例包括具有不同导通阈值电压的各种分立MOSFET，并且其源极和漏极在不同点处连接到要短路的导体，使得公共栅极偏置电压的变化选择性地使一个或多个FET导通，从而逐步定位短路。分布式PIN和MOSFET结构提供连续的短路定位作为偏置的单调函数。对于分布式FET实施例，两种不同的操作模式，引脚/电阻和电阻/低于阈值是可能的。可电气定位的短路可以耦合到传输线的导体，用于实现调谐，或者可以以这样的方式耦合到传输线，以便改变信号路径长度，从而提供相移。

2. 发明授权

US5001355A Photon energy activated radio frequency signal switch 失效
标题翻译：光子能量激活射频信号开关
公开(公告)号：US5001355A
公开(公告)日：1991-03-19
申请号：US412032
申请日：1989-09-25
申请人： Arye Rosen , Paul J. Stabile , Robert N. Hurwitz , Joseph R. Delmaster, Jr. , Philip C. Basile
发明人： Arye Rosen , Paul J. Stabile , Robert N. Hurwitz , Joseph R. Delmaster, Jr. , Philip C. Basile
IPC分类号： H01L31/0352 , H01L31/105 , H01S5/40 , H03K17/78
CPC分类号： H01S5/4025 , H01L31/035281 , H01L31/105 , H03K17/78 , H01S5/4018 , Y02E10/50
摘要： A photon energy activated PIN diode is reverse biased by a continuously supplied direct current voltage. The PIN diode is rendered conductive for passage of a radio frequency input signal when it is illuminated. Continuous illumination of the PIN diode is not required for conduction such that illumination may be pulsed on and off while the diode remains conductive.
摘要翻译：光子能量激活PIN二极管被连续提供的直流电压反向偏置。当PIN二极管点亮时，PIN二极管导通，以使射频输入信号通过。 PIN二极管的连续照明不需要用于导通，使得在二极管保持导通的同时照明可以被脉冲接通和关断。

3. 发明授权

US4871920A High power wide band amplifier using optical techniques and impedance matching to source and load 失效
标题翻译：大功率宽带放大器使用光学技术和阻抗匹配源和负载
公开(公告)号：US4871920A
公开(公告)日：1989-10-03
申请号：US182537
申请日：1988-04-18
申请人： Paul J. Stabile , Arye Rosen , Fred Sterzer
发明人： Paul J. Stabile , Arye Rosen , Fred Sterzer
IPC分类号： H04B10/158
CPC分类号： H04B10/69
摘要： An amplifying apparatus has a plurality of series coupled laser diodes that impedance match a signal source impedance and which are optically coupled to at least one PIN diode that impedance matches a load impedance. A high DC voltage is applied to the PIN diode so that gain is obtained and signal power is applied to the load. A plurality of parallel coupled PIN diodes can be used or a series-parallel combination.
摘要翻译：放大装置具有多个串联耦合的激光二极管，其阻抗匹配信号源阻抗，并且光耦合到阻抗匹配负载阻抗的至少一个PIN二极管。高直流电压被施加到PIN二极管，以便获得增益，信号功率被施加到负载上。可以使用多个并联耦合的PIN二极管或串联并联组合。

4. 发明授权

US5872623A Massively parallel detection 失效
标题翻译：大规模并行检测
公开(公告)号：US5872623A
公开(公告)日：1999-02-16
申请号：US721427
申请日：1996-09-26
申请人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
发明人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
IPC分类号： B01L3/00 , C40B60/14 , G01N21/25 , G01N21/00
CPC分类号： G01N21/255 , B01L3/5085 , B01J2219/00317 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00621 , B01J2219/00637 , B01J2219/00659 , B01J2219/00702 , B01L2300/0654 , B01L2300/0803 , B01L2300/0819 , C40B60/14
摘要： The invention provides apparatuses for detecting light from, for example, closely spaced detection sites. In one embodiment, the invention provides an apparatus for measuring the amount of light emitted from or transmitted through two or more detection sites of a first set of detection sites on a planar substrate while spatially resolving the measurements for each detection site of the first set, the apparatus comprising: for each detection site of the first set, an addressable source of a light beam directed to that detection site at a first angle; and an array detector comprising a plurality of light responsive pixels, wherein for each detection site of the first set there is at least one light responsive pixel that receives light emitted from or transmitted through that detection site at a second angle that can be the same as the first angle.
摘要翻译：本发明提供了用于检测来自例如紧密间隔的检测位置的光的装置。在一个实施例中，本发明提供了一种用于测量从平面基板上的第一组检测位置的两个或更多个检测位点发射或透射的光的量的装置，同时空间地分辨第一组的每个检测位点的测量值，该装置包括：对于第一组的每个检测部位，以第一角度指向该检测部位的光束的寻址源; 以及阵列检测器，其包括多个光响应像素，其中对于第一组的每个检测位置，存在至少一个光响应像素，其接收以第二角度发射或透过该检测部位的光，该第二角度可以与第一个角度

5. 发明授权

US5854684A Massively parallel detection 失效
标题翻译：大规模并行检测
公开(公告)号：US5854684A
公开(公告)日：1998-12-29
申请号：US721432
申请日：1996-09-26
申请人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
发明人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
IPC分类号： B01L3/00 , C40B60/14 , G01N21/25 , G01N21/00
CPC分类号： B01L3/5085 , G01N21/253 , B01J2219/00317 , B01J2219/00434 , B01J2219/00448 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00621 , B01J2219/00637 , B01J2219/00659 , B01J2219/00689 , B01J2219/00702 , B01J2219/00707 , B01L2300/0654 , B01L2300/0803 , B01L2300/0819 , C40B60/14
摘要： The invention provides apparatuses for detecting light from, for example, closely spaced detection sites. In one embodiment, the invention provides an apparatus for measuring the amount of light emitted from a first set of two or more detection sites on a planar substrate while spatially resolving the measurements from each first set detection site, the apparatus comprising: a source of a light beam directed towards the planar substrate at a first angle; one or more lenses for focusing light emitted or reflected from each of the first set detection sites and having a second angle having an angle offset from the first angle, onto a unique area of an array detector; and the array detector comprising a plurality of light responsive pixels, wherein for each first detection site there is at least one light responsive pixel that receives light emitted or reflected from that detection site and substantially no cross-talk from another detection site, and wherein substantially none of the light from the light source intersects with the array detector.
摘要翻译：本发明提供了用于检测来自例如紧密间隔的检测位置的光的装置。在一个实施例中，本发明提供了一种用于测量从平面基板上的第一组两个或更多个检测位置发射的光量的装置，同时在空间上分辨来自每个第一组检测位置的测量值，该装置包括：以第一角度朝向平面基板的光束; 一个或多个透镜，用于将从第一组检测位置中的每一个发射或反射的光聚焦并且具有与第一角度偏移的第二角度到阵列检测器的唯一区域上; 并且所述阵列检测器包括多个光响应像素，其中对于每个第一检测位置，存在至少一个光响应像素，其接收从该检测位点发射或反射的光，并且基本上不从另一检测位点进行串扰，并且其中基本上来自光源的光都不与阵列检测器相交。

6. 发明授权

US5099214A Optically activated waveguide type phase shifter and attenuator 失效
标题翻译：光纤激光波导型移相器和衰减器
公开(公告)号：US5099214A
公开(公告)日：1992-03-24
申请号：US413156
申请日：1989-09-27
申请人： Arye Rosen , Paul J. Stabile , Walter M. Janton
发明人： Arye Rosen , Paul J. Stabile , Walter M. Janton
IPC分类号： H01P1/15
CPC分类号： H01P1/15
摘要： A waveguide having walls defining an opening. An optically transmissive aperture in one wall allows light from an optical illumination source such as a laser diode array to illuminate the opening in which is located a semiconductor slab positioned to be illuminated. When the array illuminates the slab, the propagation characteristics (phase velocity and attenuation constant) of the waveguide changes. A continuous wave signal passing through the waveguide is thus attenuated and phase shifted. The laser array may be pulsed on and off while still maintaining the altered propagation constant.
摘要翻译：具有限定开口的壁的波导管。在一个壁中的光学透射孔允许来自诸如激光二极管阵列的光学照明源的光照亮位于被定位成被照明的半导体板的开口。当阵列照亮平板时，波导的传播特性（相速度和衰减常数）改变。因此通过波导的连续波信号被衰减并相移。激光器阵列可以是脉冲开启和关闭，同时仍保持改变的传播常数。

7. 发明申请

US20090216149A1 SELF-CONTAINED, IMPLANTABLE, INTRACRANIAL PRESSURE SENSING DEVICE AND METHODS FOR ITS USE IN MONITORING INTRACRANIAL PRESSURE 审中-公开
标题翻译：自包含的可植入式压力传感装置及其用于监测内压的方法
公开(公告)号：US20090216149A1
公开(公告)日：2009-08-27
申请号：US12094875
申请日：2006-12-01
申请人： Samuel R. Neff , Janine Neff , Arye Rosen , Mohammad-Reza Tofighi
发明人： Samuel R. Neff , Janine Neff , Arye Rosen , Mohammad-Reza Tofighi
IPC分类号： A61B5/03
CPC分类号： A61B5/031 , A61B5/6864 , A61B2562/028
摘要： A reliable and mass-producible microelectromechanical (MEMS)-based microwave intracranial pressure sensing device for use with a portable microwave monitor and methods for non-invasively monitoring intracranial pressure with this device are provided.
摘要翻译：提供了一种可靠且大规模生产的基于微机电（MEMS）的微波颅内压感测装置，用于便携式微波监测器和使用该装置非侵入性监测颅内压的方法。

8. 发明授权

US4381952A Method for fabricating a low loss varactor diode 失效
标题翻译：低损耗变容二极管的制造方法
公开(公告)号：US4381952A
公开(公告)日：1983-05-03
申请号：US262621
申请日：1981-05-11
申请人： Arye Rosen
发明人： Arye Rosen
IPC分类号： H01L21/265 , H01L21/306 , H01L29/93 , H01L21/263 , H01L21/203 , H01L21/22
CPC分类号： H01L29/93 , H01L21/26513 , H01L21/30604
摘要： A low conductivity, first conductivity type epitaxial layer is formed on a substrate of high conductivity, first conductivity type semiconductor material. Conductivity modifiers of second conductivity type are then implanted into the epitaxial layer so as to create a PN junction in the epitaxial layer. The substrate is next thinned, and conductivity modifiers of first conductivity type are implanted into the thinned surface so as to form a very high conductivity layer at the thinned surface.
摘要翻译：在高导电率的第一导电型半导体材料的基板上形成低导电率的第一导电型外延层。然后将第二导电类型的电导率调节剂注入到外延层中，以在外延层中产生PN结。接下来，将衬底细化，并将第一导电类型的导电性改性剂注入到薄化表面中，以在薄化表面形成非常高的导电性层。

9. 发明授权

US4230505A Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal 失效
标题翻译：利用外延沉积，离子注入和衬底去除的组合制造二极管二极管的方法
公开(公告)号：US4230505A
公开(公告)日：1980-10-28
申请号：US82733
申请日：1979-10-09
申请人： Chung P. Wu , Arye Rosen
发明人： Chung P. Wu , Arye Rosen
IPC分类号： H01L21/265 , H01L21/268 , H01L21/306 , H01L29/864 , H01L21/20 , H01L21/324
CPC分类号： H01L21/30604 , H01L21/26513 , H01L21/268 , H01L29/864 , Y10S148/061 , Y10S148/09 , Y10S148/092 , Y10S148/093 , Y10S438/928
摘要： A method of making an Impatt diode capable of operating at millimeter wave frequencies in which an epitaxial layer of the thickness desired for the diode is deposited on a substrate. Conductivity modifiers are implanted into the epitaxial layer to form one active region and a high conductivity region between the one active region and the surface of the epitaxial layer. A heat sink which also serves as a handle is formed on the epitaxial layer. The substrate is removed and conductivity modifiers are implanted into the other side of the epitaxial layer to the other active region and a high conductivity region between the other active region and the other surface of the epitaxial layer. After the implants the epitaxial layer is annealed. After the first implants the epitaxial layer may be annealed by either thermal or laser annealing. However, after the second implants the epitaxial layer must be laser annealed.
摘要翻译：一种制造能够在毫米波频率下操作的Impatt二极管的方法，其中将二极管所需厚度的外延层沉积在衬底上。将导电性改性剂注入到外延层中以在一个有源区和外延层的表面之间形成一个有源区和高导电性区。在外延层上形成也用作手柄的散热器。去除衬底，并且将导电性改性剂注入外延层的另一侧到另一个有源区，并且将另一个有源区和另一个外延层的另一表面之间的高导电性区域注入。在植入物外延层退火之后。在第一种植入物之后，外延层可以通过热或激光退火进行退火。然而，在第二次注入之后，外延层必须被激光退火。

10. 发明授权

US4167681A Microwave power limiter comprising a dual-gate FET 失效
标题翻译：微波功率限制器包括双栅极FET
公开(公告)号：US4167681A
公开(公告)日：1979-09-11
申请号：US838720
申请日：1977-10-03
申请人： Herbert J. Wolkstein , Arye Rosen , Jitendra Goel
发明人： Herbert J. Wolkstein , Arye Rosen , Jitendra Goel
IPC分类号： H03G7/00 , H03G11/00 , H03G11/04 , H04B3/04
CPC分类号： H03G11/006 , H03G7/00
摘要： A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a dual gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.
摘要翻译：微波功率限制器，用于响应于变化功率电平的输入RF信号而产生基本上恒定功率电平的输出RF信号，包括双栅场效应晶体管（FET）。 FET被偏压，使得RF功率输出变化与饱和区域中的输入功率变化相比较小。可以使用多个FET级联级来减小该功率输出变化。可以在限幅器中采用包括多个FET级联级的小信号放大器，以将功率电平增加到与饱和FET级兼容的增益或驱动电平。

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