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1. 发明授权

US10186742B2 Phase-change material reconfigurable circuits 有权
公开(公告)号：US10186742B2
公开(公告)日：2019-01-22
申请号：US13803385
申请日：2013-03-14
申请人： Marc Eisenzweig Sherwin , Robert S. Howell , Pavel Borodulin , Harold Clifton Hearne, III , Nabil Abdel-Meguid El-Hinnawy , Robert Miles Young
发明人： Marc Eisenzweig Sherwin , Robert S. Howell , Pavel Borodulin , Harold Clifton Hearne, III , Nabil Abdel-Meguid El-Hinnawy , Robert Miles Young
IPC分类号： H01P1/10 , H01L45/02 , H03K19/173 , H01L45/00 , H03K19/177
摘要： One embodiment of the invention includes a reconfigurable circuit comprising a phase-change material switch. The phase-change material switch includes an actuation portion configured to receive a control signal having one of a first state and a second state and to emit a first heat profile in response to the first state of the control signal and a second heat profile in response to the second state of the control signal. The phase-change material switch also includes a switch portion comprising a phase-change material in proximity with the actuation portion. The switch portion can be selectable between a conducting state in response to the first heat profile to conduct an input signal from an input to an output of the phase-change material switch and a blocking state in response to the second heat profile to substantially block the input signal from the input to the output.

2. 发明授权

US09401861B2 Scalable MAC address distribution in an Ethernet fabric switch 有权
标题翻译：以太网交换机中的可扩展MAC地址分配
公开(公告)号：US09401861B2
公开(公告)日：2016-07-26
申请号：US13425238
申请日：2012-03-20
申请人： Mythilikanth Raman , Mary Manohar
发明人： Mythilikanth Raman , Mary Manohar
IPC分类号： H04L12/56 , H04L12/721 , H01L45/02
CPC分类号： H04L45/66 , H01L45/02 , H04L45/02
摘要： One embodiment of the present invention provides a switch. The switch includes a notification mechanism. The notification mechanism constructs a single message that contains a locally learned MAC address associated with a local device, a TRILL RBridge identifier associated with the switch, and an identifier of an interface associated with the MAC address. In some embodiments, the switch includes a data structure and an entry management mechanism. The data structure stores device information learned at a remote switch, wherein the device information includes a MAC address of a device, a TRILL RBridge identifier associated with the remote switch, an identifier of an interface coupled to the device, and a type indicator of the MAC address. The entry management mechanism manages an entry in the data structure based on the RBridge identifier and the interface identifier.
摘要翻译：本发明的一个实施例提供一种开关。交换机包括通知机制。通知机制构成包含与本地设备相关联的本地学习的MAC地址的单个消息，与交换机相关联的TRILL RBridge标识符以及与MAC地址相关联的接口的标识符。在一些实施例中，交换机包括数据结构和入口管理机制。数据结构存储在远程交换机处学到的设备信息，其中设备信息包括设备的MAC地址，与远程交换机相关联的TRILL RBridge标识符，耦合到该设备的接口的标识符，以及 MAC地址。入口管理机制根据RBridge标识符和接口标识符管理数据结构中的条目。

3. 发明授权

US09331069B2 Resistor memory bit-cell and circuitry and method of making the same 有权
公开(公告)号：US09331069B2
公开(公告)日：2016-05-03
申请号：US14826184
申请日：2015-08-13
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
发明人： Herb He Huang
IPC分类号： H01L27/06 , H01L45/00 , H01L27/11 , H01L45/02 , H01L27/24 , H01L29/45 , H01L29/49 , H01L29/08 , H01L27/10 , H01L21/768 , H01L21/265 , H01L29/417 , H01L27/22
CPC分类号： H01L27/0694 , H01L21/26533 , H01L21/76898 , H01L27/101 , H01L27/1112 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L29/0847 , H01L29/4175 , H01L29/45 , H01L29/4975 , H01L45/02 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/128 , H01L45/144 , H01L45/1608
摘要： A resistive memory cell control unit, integrated circuit, and method are described herein. The resistive memory cell control unit includes a switching transistor and a resistive memory cell. The switching transistor includes a gate disposed on a first surface of a semiconductor substrate, a source, and a drain each disposed in the semiconductor substrate, a gate terminal disposed on the first surface and connected to the gate, a source terminal disposed on the first surface and connected to the source, and a drain terminal connected to the drain and disposed on a second surface opposite the first surface. The resistive memory cell is disposed on the second surface and has a first end connected to the drain terminal. The structure provides a small area and simple manufacturing process for a resistive memory cell integrated circuit.

4. 发明授权

US08999809B2 Method for fabricating resistive random access memory 有权
标题翻译：制造电阻随机存取存储器的方法
公开(公告)号：US08999809B2
公开(公告)日：2015-04-07
申请号：US14541159
申请日：2014-11-14
申请人： Powerchip Technology Corporation
发明人： Chan-Ching Lin , Chen-Hao Huang , Tzung-Bin Huang , Chun-Cheng Chen , Ching-Hua Chen
IPC分类号： H01L45/02 , H01L21/02 , H01L45/00 , H01L27/24 , H01L29/66
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/003 , G11C2213/32 , G11C2213/72 , H01L27/2418 , H01L27/2463 , H01L29/6609 , H01L45/04 , H01L45/1226 , H01L45/1253 , H01L45/146 , H01L45/1691
摘要： A method of fabricating a resistive random access memory (RRAM) device is disclosed. A plurality of word lines extending along a first direction are formed on a substrate with a recess between the word lines. A spacer-type resistance layer and a top electrode layer are formed on a sidewall of each of the word lines. A photoresist stripe pattern extending along a second direction is then formed on the substrate. The first direction is perpendicular to the second direction. An etching process is performed to remove the top electrode layer and the spacer-type resistance layer not covered by the photoresist stripe pattern to form a plurality of top electrodes. A diode is formed on each of the top electrodes.
摘要翻译：公开了一种制造电阻随机存取存储器（RRAM）装置的方法。沿着第一方向延伸的多个字线形成在具有在字线之间的凹部的基板上。在每个字线的侧壁上形成间隔型电阻层和顶电极层。然后在基板上形成沿着第二方向延伸的光致抗蚀剂条纹图案。第一方向垂直于第二方向。进行蚀刻处理以去除未被光致抗蚀剂条纹图案覆盖的顶部电极层和间隔物型电阻层，以形成多个顶部电极。在每个顶电极上形成二极管。

5. 发明申请

US20130293227A1 METHOD FOR GENERATING SPIN WAVES 有权
标题翻译：产生旋转波的方法
公开(公告)号：US20130293227A1
公开(公告)日：2013-11-07
申请号：US13996859
申请日：2011-12-19
申请人： Dmitry Dmitrievich Grachev , Leonid Antonovich Sevastyanov
发明人： Dmitry Dmitrievich Grachev , Leonid Antonovich Sevastyanov
IPC分类号： H01L45/02
CPC分类号： H01L45/02 , B82Y10/00 , H01L43/00 , H01L51/0045
摘要： In the method, a pre-selected working area of a graphene film with a linear dimension of 2,000 nm, which working area is divided into sections having a dimension of 50-100 nm, is subjected to the effect of a pulsed alternating magnetic field with a frequency of 3 terahertz that corresponds to the transition from the ground energy level, corresponding to the non-excited state of spin density, to a fourth working energy level of the excited state of spin density in the graphene film, thus causing spin density pumping. A spatially localized external magnetic field is generated around the edges of the working area, which resonantly reflects spinons having a working frequency of 0.5-1 terahertz that corresponds to the transition from a third working energy level to a second working energy level of the excited state of spin density, said spinons causing the induced coherent radiation of working frequency spin waves as they pass thorough the working area.
摘要翻译：在该方法中，将工作区域划分成50-100nm的尺寸的线性尺寸为2000nm的石墨烯膜的预选工作区域受到脉冲交变磁场的影响，对应于对应于自旋密度的非激发态的地面能级的转变的3太赫兹的频率到石墨烯膜中自旋密度的激发态的第四工作能级，从而导致自旋密度泵送。在工作区域的边缘周围产生空间局部的外部磁场，其共振地反射具有0.5-1兆赫兹的工作频率的螺旋，这对应于从第三工作能级到激发态的第二工作能级的转变的自旋密度，当他们通过工作区域时，所述螺旋引起工作频率自旋波的感应相干辐射。

6. 发明授权

US07528456B1 Nano-scale computational architectures with spin wave bus 有权
标题翻译：具有自旋波总线的纳米级计算架构
公开(公告)号：US07528456B1
公开(公告)日：2009-05-05
申请号：US11365794
申请日：2006-03-01
申请人： Alexander Khitun , Roman P. Ostroumov , Kang L. Wang
发明人： Alexander Khitun , Roman P. Ostroumov , Kang L. Wang
IPC分类号： H01L45/02
CPC分类号： H03K19/18 , Y10S977/933
摘要： New kinds of nano-scale computational architectures using spin waves as a physical mechanism for device interconnection are described. A method for operating a logic device having a spin wave bus includes the step of receiving an input signal representing information. A spin wave is excited with the information coded in an aspect of the spin wave in response to receiving the input signal. The spin wave is propagated through a spin wave bus having an associated polarization. The information associated with the spin wave is determined in response to propagating the spin wave through the spin wave bus.
摘要翻译：描述了使用自旋波作为器件互连的物理机制的新型纳米级计算架构。一种用于操作具有自旋波母线的逻辑器件的方法包括接收表示信息的输入信号的步骤。响应于接收输入信号，在自旋波的方面编码的信息激发自旋波。自旋波通过具有相关偏振的自旋波母线传播。响应于通过自旋波母线传播自旋波而确定与自旋波相关联的信息。

7. 发明授权

US4843358A Electrically positionable short-circuits 失效
标题翻译：电位置短路
公开(公告)号：US4843358A
公开(公告)日：1989-06-27
申请号：US211102
申请日：1988-06-20
申请人： William H. Meise , Arye Rosen , Paul J. Stabile
发明人： William H. Meise , Arye Rosen , Paul J. Stabile
IPC分类号： H01L29/423 , H01L29/78 , H01L29/868 , H01L45/02 , H01P1/185 , H01P1/20 , H01P1/28 , H01P7/00
CPC分类号： H01L45/02 , H01L29/42368 , H01L29/78 , H01L29/868 , H01P1/185 , H01P1/20 , H01P1/28 , H01P7/00
摘要： An electrical short-circuit for alternating-current (ac) microwave signals is physically positionable in direct response to an electrical bias control without an intermediary electromechanical converter. The electrically positionable short circuit includes at least first and second doped regions in a semiconductor, separated by a region in which the short circuit is formed between the doped regions by the bias. A first embodiment comprises discrete diodes connected between conductors at different locations, the discrete diodes having different forward junction voltages, so that varying the common bias voltage varies the number of conducting diodes and thus positions the short circuit in a stepwise manner. A FET embodiment includes various discrete MOSFETs having different conduction threshold voltages, and having their sources and drains connected at various points to the conductors to be short-circuited, so that variations of a common gate bias voltage selectively render one or more of the FETs conductive, thereby stepwise positioning the short-circuit. Distributed PIN and MOSFET structures provide continuous short circuit positioning as a monotonic function of bias. Two distinct modes of operation, pinchoff/resistive and a resistive/below-threshold are possible for the distributed FET embodiment. The electrically positionable short-circuit can be coupled to the conductors of a transmission line for effecting tuning, or can be coupled to a transmission line in such a way as to vary the signal path length and thereby provide phase shift.
摘要翻译：交流（ac）微波信号的电气短路可以直接响应于电偏压控制而物理定位，而无需中间机电转换器。电可定位短路包括在半导体中的至少第一和第二掺杂区域，由通过偏压在掺杂区域之间形成短路的区域分开。第一实施例包括连接在不同位置的导体之间的分立二极管，分立二极管具有不同的正向结电压，使得改变公共偏置电压改变导通二极管的数量，从而以逐步的方式定位短路。 FET实施例包括具有不同导通阈值电压的各种分立MOSFET，并且其源极和漏极在不同点处连接到要短路的导体，使得公共栅极偏置电压的变化选择性地使一个或多个FET导通，从而逐步定位短路。分布式PIN和MOSFET结构提供连续的短路定位作为偏置的单调函数。对于分布式FET实施例，两种不同的操作模式，引脚/电阻和电阻/低于阈值是可能的。可电气定位的短路可以耦合到传输线的导体，用于实现调谐，或者可以以这样的方式耦合到传输线，以便改变信号路径长度，从而提供相移。

8. 发明授权

US3728637A Semiconductor arrangement for nonreciprocal amplification or generation of oscillations in the microwave range 失效
标题翻译：用于微波放大或微波产生振荡的半导体器件布置
公开(公告)号：US3728637A
公开(公告)日：1973-04-17
申请号：US3728637D
申请日：1970-08-27
申请人： LICENTIA GMBH
发明人： ENGELMANN R
IPC分类号： H01L45/02 , H01L47/00 , H03B9/14 , H03F3/04
CPC分类号： H03B9/14 , H01L45/02 , H01L47/00
摘要： A semiconductor arrangement for nonreciprocal amplification or for the generation of high frequency oscillations in which high frequency electromagnetic energy is coupled into a semiconductor layer which exhibits a negative differential charge carrier mobility in a direction perpendicular to the applied drift field and has a predetermined layer thickness in this perpendicular direction thereby exciting properly growing space charge waves. The arrangement may be geometrically symmetrical in this perpendicular direction and may have either symmetrical or antisymmetrical coupling and decoupling means for the high frequency electromagnetic energy thereby exciting and removing space charge waves of the symmetrical or antisymmetrical type, respectively.
摘要翻译：一种用于不可逆放大或用于产生高频振荡的半导体装置，其中高频电磁能耦合到半导体层中，该半导体层在垂直于所施加的漂移场的方向上具有负的差分电荷载流子迁移率，并且具有预定的层厚度这样垂直方向从而激发适当增长的空间电荷波。该布置可以在该垂直方向上几何对称，并且可以具有用于高频电磁能的对称或反对称耦合和去耦装置，从而分别激励和去除对称或反对称类型的空间电荷波。

9. 发明授权

US3639851A Novel semiconductor amplifier 失效
标题翻译：新型半导体放大器
公开(公告)号：US3639851A
公开(公告)日：1972-02-01
申请号：US3639851D
申请日：1969-06-26
申请人： THOMSON CSF
发明人： DIAMOND FELIX
IPC分类号： H01L45/02 , H03F3/14
CPC分类号： H01L45/02
摘要： The present invention invention relates to a semiconductor-type travelling wave structure. A thin extrinsic semiconductor strip is located in the field of a delay line; a continuous field is applied between the two ends of the strip; the line has an HF input and an HF output.
摘要翻译：半导体型行波结构技术领域本发明涉及半导体型行波结构。薄的外部半导体条位于延迟线的场中; 在条的两端之间施加连续的场; 该线路具有HF输入和HF输出。

10. 发明授权

US3621411A Traveling high-gain amplifier 失效
标题翻译：旅行高增益放大器
公开(公告)号：US3621411A
公开(公告)日：1971-11-16
申请号：US3621411D
申请日：1969-11-13
申请人： TEXAS INSTRUMENTS INC
发明人： WISSEMAN WILLIAM R
IPC分类号： H01L45/02 , H03F3/55 , H03F3/04
CPC分类号： H01L45/02 , H03F3/55
摘要： Power amplification of a radiofrequency signal is achieved in a two-valley semiconductor material such a gallium arsenide (GaAs). To achieve amplification of the radiofrequency signal, a slow wave circuit, such as a meandering line is required to slow the propagating velocity of an electromagnetic wave in the two-valley semiconductor material below the velocity of the charge carriers. The slow wave circuit may be formed by printed circuit techniques on the surface of the semiconductor wafer. For high-gain amplification or self-oscillation, a DC or pulse source generates an electric field in the semiconductor so that the carriers drift in the direction of the radiofrequency wave propagation. The magnitude of the electric field applied to the semiconductor material is adjusted such that the rate of change of conductivity vanishes.

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