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1. 发明授权

US5001355A Photon energy activated radio frequency signal switch 失效
标题翻译：光子能量激活射频信号开关
公开(公告)号：US5001355A
公开(公告)日：1991-03-19
申请号：US412032
申请日：1989-09-25
申请人： Arye Rosen , Paul J. Stabile , Robert N. Hurwitz , Joseph R. Delmaster, Jr. , Philip C. Basile
发明人： Arye Rosen , Paul J. Stabile , Robert N. Hurwitz , Joseph R. Delmaster, Jr. , Philip C. Basile
IPC分类号： H01L31/0352 , H01L31/105 , H01S5/40 , H03K17/78
CPC分类号： H01S5/4025 , H01L31/035281 , H01L31/105 , H03K17/78 , H01S5/4018 , Y02E10/50
摘要： A photon energy activated PIN diode is reverse biased by a continuously supplied direct current voltage. The PIN diode is rendered conductive for passage of a radio frequency input signal when it is illuminated. Continuous illumination of the PIN diode is not required for conduction such that illumination may be pulsed on and off while the diode remains conductive.
摘要翻译：光子能量激活PIN二极管被连续提供的直流电压反向偏置。当PIN二极管点亮时，PIN二极管导通，以使射频输入信号通过。 PIN二极管的连续照明不需要用于导通，使得在二极管保持导通的同时照明可以被脉冲接通和关断。

2. 发明授权

US4872039A Buried lateral diode and method for making same 失效
标题翻译：埋入式二极管及其制作方法
公开(公告)号：US4872039A
公开(公告)日：1989-10-03
申请号：US73897
申请日：1987-07-13
申请人： Paul J. Stabile
发明人： Paul J. Stabile
IPC分类号： H01L21/329 , H01L29/06 , H01L29/864
CPC分类号： H01L29/66159 , H01L29/0684 , H01L29/66204 , H01L29/864
摘要： A diode in a semiconductor body has two laterally adjacent regions. Each region has buried portions. The first and second regions are doped with opposite conductivity type dopants. A buried P-N junction exists where the buried portions meet. Since the junction is buried, surface breakdown effects are greatly reduced. The lateral orientation provides for easier series connection or several such diodes. A method for making a diode in a body comprises forming two laterally adjacent buried portions of respective opposite conductivity type regions. A contact portion of at least one region is formed extending to the surface of the body.
摘要翻译：半导体主体中的二极管具有两个横向相邻的区域。每个区域都有埋藏部分。第一和第二区域掺杂有相反导电类型的掺杂剂。埋置的P-N结存在于埋藏部分相遇处。由于接头被埋置，表面击穿效应大大降低。横向方向提供更容易的串联或几个这样的二极管。在体内制造二极管的方法包括形成相应导电类型区域的两个横向相邻的掩埋部分。至少一个区域的接触部分形成为延伸到主体的表面。

3. 发明授权

US4871920A High power wide band amplifier using optical techniques and impedance matching to source and load 失效
标题翻译：大功率宽带放大器使用光学技术和阻抗匹配源和负载
公开(公告)号：US4871920A
公开(公告)日：1989-10-03
申请号：US182537
申请日：1988-04-18
申请人： Paul J. Stabile , Arye Rosen , Fred Sterzer
发明人： Paul J. Stabile , Arye Rosen , Fred Sterzer
IPC分类号： H04B10/158
CPC分类号： H04B10/69
摘要： An amplifying apparatus has a plurality of series coupled laser diodes that impedance match a signal source impedance and which are optically coupled to at least one PIN diode that impedance matches a load impedance. A high DC voltage is applied to the PIN diode so that gain is obtained and signal power is applied to the load. A plurality of parallel coupled PIN diodes can be used or a series-parallel combination.
摘要翻译：放大装置具有多个串联耦合的激光二极管，其阻抗匹配信号源阻抗，并且光耦合到阻抗匹配负载阻抗的至少一个PIN二极管。高直流电压被施加到PIN二极管，以便获得增益，信号功率被施加到负载上。可以使用多个并联耦合的PIN二极管或串联并联组合。

4. 发明授权

US4780724A Antenna with integral tuning element 失效
标题翻译：带有整体调谐元件的天线
公开(公告)号：US4780724A
公开(公告)日：1988-10-25
申请号：US853739
申请日：1986-04-18
申请人： Arvind K. Sharma , Paul J. Stabile
发明人： Arvind K. Sharma , Paul J. Stabile
IPC分类号： H01Q9/04 , H01Q1/38
CPC分类号： H01Q9/0442
摘要： A patch antenna, which may be one element of an antenna array, is formed on one broad surface of a semiconductor plate. A ground plane is formed on the second broad surface. This semiconductor is doped in regions near a periphery of the patch to define a semiconductor PN junction have electrode contacts to the patch and to the ground plane. The junction has capacitance which tunes the patch antenna. The characteristics of the junction are controlled by bias to selectively tune the patch antenna. The bias is a direct voltage in one embodiment of the invention. In another embodiment, the junction work function itself provides a bias which is controlled by temperature control of the diode.
摘要翻译：可以是天线阵列的一个元件的贴片天线形成在半导体板的一个宽表面上。在第二宽表面上形成接地平面。该半导体掺杂在贴片周边附近的区域中以限定半导体PN结，具有与贴片和接地平面的电极接触。接点具有调谐贴片天线的电容。通过偏置来控制结的特性以选择性地调整贴片天线。在本发明的一个实施例中，偏压是直流电压。在另一个实施例中，接合功能本身提供由二极管的温度控制来控制的偏压。

5. 发明授权

US4777490A Monolithic antenna with integral pin diode tuning 失效
标题翻译：整体式二极管调谐的单片天线
公开(公告)号：US4777490A
公开(公告)日：1988-10-11
申请号：US859032
申请日：1986-04-22
申请人： Arvind K. Sharma , Paul J. Stabile
发明人： Arvind K. Sharma , Paul J. Stabile
IPC分类号： H01Q9/04 , H01Q21/00 , H01Q19/06
CPC分类号： H01Q9/0442 , H01Q21/0093
摘要： Antennas chiefly intended for microwave and millimeter-wave use include geometric-shaped conductive patches on one broad surface of a planar semiconductor substrate. The other broad side of the substrate bears a conductive ground plane. Monolithic PIN diodes are formed by doping the substrate at various points between the conductive patch and the ground plane. Biasing arrangements affect the conduction of the PIN diodes thereby affecting or tuning the optimum operating frequency, the radiation pattern, and/or the impedance of the antenna. In a particularly advantageous configuration, the PIN diodes have lateral dimensions greater than or equal to one-tenth wavelength (.lambda./10) at the operating frequency. Distributed diodes have lower resistance and reactance than discrete or discrete monolithic diodes, thereby providing improved radiating characteristics, and have a relatively large power-handling capability which makes them useful for power transmission.
摘要翻译：主要用于微波和毫米波使用的天线包括在平面半导体衬底的一个宽表面上的几何形状的导电贴片。衬底的另一侧面具有导电接地平面。通过在导电贴片和接地平面之间的各个点处掺杂衬底来形成单片PIN二极管。偏置布置影响PIN二极管的导通，从而影响或调谐天线的最佳工作频率，辐射方向图和/或阻抗。在特别有利的配置中，PIN二极管在工作频率处具有大于或等于十分之一波长（λ/ 10）的横向尺寸。分散二极管比离散或分立的单片二极管具有更低的电阻和电抗，从而提供改进的辐射特性，并且具有相对较大的功率处理能力，使得它们对于功率传输是有用的。

6. 发明授权

US5051789A Device having two optical ports for switching applications 失效
标题翻译：具有两个用于切换应用的光端口的设备
公开(公告)号：US5051789A
公开(公告)日：1991-09-24
申请号：US595528
申请日：1990-10-11
申请人： Ayre Rosen , Paul J. Stabile
发明人： Ayre Rosen , Paul J. Stabile
IPC分类号： H01L31/0352 , H01L31/105 , H01L31/167 , H03K17/78
CPC分类号： H03K17/78 , H01L31/03529 , H01L31/105 , H01L31/167 , Y02E10/50
摘要： A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.
摘要翻译：一种双面可光激活的半导体开关器件，在其每一侧具有一个光口。半导体器件可以是p-i-n二极管或本体固有材料。由1.3 kV直流电源反向偏置为“关闭”的双端口p-i-n二极管由两个1 kW激光二极管阵列激活时会导通192 A，每个光纤端口一个。

7. 发明授权

US5872623A Massively parallel detection 失效
标题翻译：大规模并行检测
公开(公告)号：US5872623A
公开(公告)日：1999-02-16
申请号：US721427
申请日：1996-09-26
申请人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
发明人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
IPC分类号： B01L3/00 , C40B60/14 , G01N21/25 , G01N21/00
CPC分类号： G01N21/255 , B01L3/5085 , B01J2219/00317 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00621 , B01J2219/00637 , B01J2219/00659 , B01J2219/00702 , B01L2300/0654 , B01L2300/0803 , B01L2300/0819 , C40B60/14
摘要： The invention provides apparatuses for detecting light from, for example, closely spaced detection sites. In one embodiment, the invention provides an apparatus for measuring the amount of light emitted from or transmitted through two or more detection sites of a first set of detection sites on a planar substrate while spatially resolving the measurements for each detection site of the first set, the apparatus comprising: for each detection site of the first set, an addressable source of a light beam directed to that detection site at a first angle; and an array detector comprising a plurality of light responsive pixels, wherein for each detection site of the first set there is at least one light responsive pixel that receives light emitted from or transmitted through that detection site at a second angle that can be the same as the first angle.
摘要翻译：本发明提供了用于检测来自例如紧密间隔的检测位置的光的装置。在一个实施例中，本发明提供了一种用于测量从平面基板上的第一组检测位置的两个或更多个检测位点发射或透射的光的量的装置，同时空间地分辨第一组的每个检测位点的测量值，该装置包括：对于第一组的每个检测部位，以第一角度指向该检测部位的光束的寻址源; 以及阵列检测器，其包括多个光响应像素，其中对于第一组的每个检测位置，存在至少一个光响应像素，其接收以第二角度发射或透过该检测部位的光，该第二角度可以与第一个角度

8. 发明授权

US5854684A Massively parallel detection 失效
标题翻译：大规模并行检测
公开(公告)号：US5854684A
公开(公告)日：1998-12-29
申请号：US721432
申请日：1996-09-26
申请人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
发明人： Paul J. Stabile , David Norman Ludington , Pamela Kay York , Arye Rosen , Satyam Choudary Cherukuri , Peter John Zanzucchi , Paul Heaney
IPC分类号： B01L3/00 , C40B60/14 , G01N21/25 , G01N21/00
CPC分类号： B01L3/5085 , G01N21/253 , B01J2219/00317 , B01J2219/00434 , B01J2219/00448 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00621 , B01J2219/00637 , B01J2219/00659 , B01J2219/00689 , B01J2219/00702 , B01J2219/00707 , B01L2300/0654 , B01L2300/0803 , B01L2300/0819 , C40B60/14
摘要： The invention provides apparatuses for detecting light from, for example, closely spaced detection sites. In one embodiment, the invention provides an apparatus for measuring the amount of light emitted from a first set of two or more detection sites on a planar substrate while spatially resolving the measurements from each first set detection site, the apparatus comprising: a source of a light beam directed towards the planar substrate at a first angle; one or more lenses for focusing light emitted or reflected from each of the first set detection sites and having a second angle having an angle offset from the first angle, onto a unique area of an array detector; and the array detector comprising a plurality of light responsive pixels, wherein for each first detection site there is at least one light responsive pixel that receives light emitted or reflected from that detection site and substantially no cross-talk from another detection site, and wherein substantially none of the light from the light source intersects with the array detector.
摘要翻译：本发明提供了用于检测来自例如紧密间隔的检测位置的光的装置。在一个实施例中，本发明提供了一种用于测量从平面基板上的第一组两个或更多个检测位置发射的光量的装置，同时在空间上分辨来自每个第一组检测位置的测量值，该装置包括：以第一角度朝向平面基板的光束; 一个或多个透镜，用于将从第一组检测位置中的每一个发射或反射的光聚焦并且具有与第一角度偏移的第二角度到阵列检测器的唯一区域上; 并且所述阵列检测器包括多个光响应像素，其中对于每个第一检测位置，存在至少一个光响应像素，其接收从该检测位点发射或反射的光，并且基本上不从另一检测位点进行串扰，并且其中基本上来自光源的光都不与阵列检测器相交。

9. 发明授权

US5099214A Optically activated waveguide type phase shifter and attenuator 失效
标题翻译：光纤激光波导型移相器和衰减器
公开(公告)号：US5099214A
公开(公告)日：1992-03-24
申请号：US413156
申请日：1989-09-27
申请人： Arye Rosen , Paul J. Stabile , Walter M. Janton
发明人： Arye Rosen , Paul J. Stabile , Walter M. Janton
IPC分类号： H01P1/15
CPC分类号： H01P1/15
摘要： A waveguide having walls defining an opening. An optically transmissive aperture in one wall allows light from an optical illumination source such as a laser diode array to illuminate the opening in which is located a semiconductor slab positioned to be illuminated. When the array illuminates the slab, the propagation characteristics (phase velocity and attenuation constant) of the waveguide changes. A continuous wave signal passing through the waveguide is thus attenuated and phase shifted. The laser array may be pulsed on and off while still maintaining the altered propagation constant.
摘要翻译：具有限定开口的壁的波导管。在一个壁中的光学透射孔允许来自诸如激光二极管阵列的光学照明源的光照亮位于被定位成被照明的半导体板的开口。当阵列照亮平板时，波导的传播特性（相速度和衰减常数）改变。因此通过波导的连续波信号被衰减并相移。激光器阵列可以是脉冲开启和关闭，同时仍保持改变的传播常数。

10. 发明授权

US4843358A Electrically positionable short-circuits 失效
标题翻译：电位置短路
公开(公告)号：US4843358A
公开(公告)日：1989-06-27
申请号：US211102
申请日：1988-06-20
申请人： William H. Meise , Arye Rosen , Paul J. Stabile
发明人： William H. Meise , Arye Rosen , Paul J. Stabile
IPC分类号： H01L29/423 , H01L29/78 , H01L29/868 , H01L45/02 , H01P1/185 , H01P1/20 , H01P1/28 , H01P7/00
CPC分类号： H01L45/02 , H01L29/42368 , H01L29/78 , H01L29/868 , H01P1/185 , H01P1/20 , H01P1/28 , H01P7/00
摘要： An electrical short-circuit for alternating-current (ac) microwave signals is physically positionable in direct response to an electrical bias control without an intermediary electromechanical converter. The electrically positionable short circuit includes at least first and second doped regions in a semiconductor, separated by a region in which the short circuit is formed between the doped regions by the bias. A first embodiment comprises discrete diodes connected between conductors at different locations, the discrete diodes having different forward junction voltages, so that varying the common bias voltage varies the number of conducting diodes and thus positions the short circuit in a stepwise manner. A FET embodiment includes various discrete MOSFETs having different conduction threshold voltages, and having their sources and drains connected at various points to the conductors to be short-circuited, so that variations of a common gate bias voltage selectively render one or more of the FETs conductive, thereby stepwise positioning the short-circuit. Distributed PIN and MOSFET structures provide continuous short circuit positioning as a monotonic function of bias. Two distinct modes of operation, pinchoff/resistive and a resistive/below-threshold are possible for the distributed FET embodiment. The electrically positionable short-circuit can be coupled to the conductors of a transmission line for effecting tuning, or can be coupled to a transmission line in such a way as to vary the signal path length and thereby provide phase shift.
摘要翻译：交流（ac）微波信号的电气短路可以直接响应于电偏压控制而物理定位，而无需中间机电转换器。电可定位短路包括在半导体中的至少第一和第二掺杂区域，由通过偏压在掺杂区域之间形成短路的区域分开。第一实施例包括连接在不同位置的导体之间的分立二极管，分立二极管具有不同的正向结电压，使得改变公共偏置电压改变导通二极管的数量，从而以逐步的方式定位短路。 FET实施例包括具有不同导通阈值电压的各种分立MOSFET，并且其源极和漏极在不同点处连接到要短路的导体，使得公共栅极偏置电压的变化选择性地使一个或多个FET导通，从而逐步定位短路。分布式PIN和MOSFET结构提供连续的短路定位作为偏置的单调函数。对于分布式FET实施例，两种不同的操作模式，引脚/电阻和电阻/低于阈值是可能的。可电气定位的短路可以耦合到传输线的导体，用于实现调谐，或者可以以这样的方式耦合到传输线，以便改变信号路径长度，从而提供相移。

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