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1. 发明授权

US07934175B2 Parameter adjustment method, semiconductor device manufacturing method, and recording medium 有权
标题翻译：参数调整方法，半导体器件制造方法和记录介质
公开(公告)号：US07934175B2
公开(公告)日：2011-04-26
申请号：US12062859
申请日：2008-04-04
申请人： Toshiya Kotani , Yasunobu Kai , Soichi Inoue , Satoshi Tanaka , Shigeki Nojima , Kazuyuki Masukawa , Koji Hashimoto
发明人： Toshiya Kotani , Yasunobu Kai , Soichi Inoue , Satoshi Tanaka , Shigeki Nojima , Kazuyuki Masukawa , Koji Hashimoto
IPC分类号： G06F17/50
CPC分类号： G03F7/70625 , G03F7/70525 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A parameter adjustment method for a plurality of manufacturing devices to form a pattern of a semiconductor device on a substrate using the manufacturing devices includes: adjusting a parameter adjustable for a manufacturing device serving as a reference manufacturing device; obtaining a first shape of a pattern of a semiconductor device to be formed on a substrate; defining an adjustable parameter of another to-be-adjusted manufacturing; obtaining a second shape of the pattern formed on the substrate; calculating a difference amount between a reference finished shape and a to-be-adjusted finished shape; repeatedly calculating the difference amount by changing the to-be-adjusted parameter until the difference amount becomes equal to or less than a predetermined reference value; and outputting as a parameter of the to-be-adjusted manufacturing device the to-be-adjusted parameter.
摘要翻译：用于使用该制造装置在基板上形成半导体器件的图案的多个制造装置的参数调整方法包括：调整可用于作为参考制造装置的制造装置的参数; 获得要在基板上形成的半导体器件的图案的第一形状; 定义另一个待调整制造的可调参数; 获得形成在所述基板上的所述图案的第二形状; 计算参考完成形状和待调整完成形状之间的差值; 通过改变待调整参数重复计算差值，直到差值变得等于或小于预定参考值; 并作为待调整制造装置的参数输出待调整参数。

2. 发明申请

US20080250381A1 PARAMETER ADJUSTMENT METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM 有权
标题翻译：参数调整方法，半导体器件制造方法和记录介质
公开(公告)号：US20080250381A1
公开(公告)日：2008-10-09
申请号：US12062859
申请日：2008-04-04
申请人： Toshiya KOTANI , Yasunobu Kai , Soichi Inoue , Satoshi Tanaka , Shigeki Nojima , Kazuyuki Masukawa , Koji Hashimoto
发明人： Toshiya KOTANI , Yasunobu Kai , Soichi Inoue , Satoshi Tanaka , Shigeki Nojima , Kazuyuki Masukawa , Koji Hashimoto
IPC分类号： G06F17/50
CPC分类号： G03F7/70625 , G03F7/70525 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A parameter adjustment method for a plurality of manufacturing devices to form a pattern of a semiconductor device on a substrate using the manufacturing devices includes: adjusting a parameter adjustable for a manufacturing device serving as a reference manufacturing device so as to fall within a range of a predetermined permissible variation and defining the adjusted parameter as a reference parameter of the reference manufacturing device; obtaining a first shape of a pattern of a semiconductor device to be formed on a substrate using the reference manufacturing device from a mask to form the pattern on the substrate when the reference parameter is set to the reference manufacturing device and defining the obtained first shape as a reference finished shape; defining an adjustable parameter of another to-be-adjusted manufacturing device as a to-be-adjusted parameter of the to-be-adjusted manufacturing device; obtaining a second shape of the pattern formed on the substrate using the to-be-adjusted manufacturing device from the mask when the defined to-be-adjusted parameter is set to the to-be-adjusted manufacturing device and defining the obtained second shape as a to-be-adjusted finished shape; calculating a difference amount between the reference finished shape and the to-be-adjusted finished shape; repeatedly calculating the difference amount by changing the to-be-adjusted parameter until the difference amount becomes equal to or less than a predetermined reference value; outputting as a parameter of the to-be-adjusted manufacturing device the to-be-adjusted parameter having the difference amount equal to or less than the predetermined reference value or the to-be-adjusted parameter having the difference amount which becomes equal to or less than the predetermined reference value through the repeated calculation.
摘要翻译：用于使用该制造装置在基板上形成半导体器件的图案的多个制造装置的参数调整方法包括：调整作为参考制造装置的制造装置可调节的参数，使其落在预定的允许变化并将调整参数定义为参考制造装置的参考参数; 使用参考制造装置从掩模获得要在基板上形成的半导体器件的图案的第一形状，以在将参考参数设置为参考制造装置并将所获得的第一形状定义为参考完成形状; 将另一个待调节制造装置的可调参数定义为待调整制造装置的待调整参数; 当将所述规定的待调整参数设定为所述待调节制造装置并且将所获得的第二形状定义为所述第二形状时，从所述掩模获得使用所述待调节制造装置在所述基板上形成的所述图案的第二形状一个待调整的成品形状; 计算参考完成形状和待调整完成形状之间的差值; 通过改变待调整参数重复计算差值，直到差值变得等于或小于预定参考值; 作为待调整制造装置的参数输出具有等于或小于预定参考值的差值的待调整参数或具有等于或等于或等于或等于通过重复计算小于预定的参考值。

3. 发明申请

US20090142706A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090142706A1
公开(公告)日：2009-06-04
申请号：US12257968
申请日：2008-10-24
申请人： Kazuyuki Masukawa , Koji Hashimoto , Kenji Kawano , Yasunobu Kai
发明人： Kazuyuki Masukawa , Koji Hashimoto , Kenji Kawano , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70425 , G03F7/70441
摘要： A method of manufacturing a semiconductor includes performing exposure using a first photomask having a pattern line in which hole patterns and assist patterns not transferred onto the semiconductor substrate are arrayed at an equal pitch on the mask, the pitch being converted a first pitch Phole on the substrate when the mask patterns are transferred on the substrate, and performing exposure using a second photomask having a pattern line in which wiring patterns are arrayed at an equal pitch on the mask, the pitch being converted a second pitch Pline on the substrate when the mask patterns are transferred on the substrate, wherein m×Pline=n×Phole and m,n(m>n) are integers.
摘要翻译：制造半导体的方法包括使用具有图案线的第一光掩模进行曝光，其中未转印到半导体衬底上的孔图案和辅助图案以等间距排列在掩模上，该间距将第一节距P孔转换为衬底，当掩模图案被转印到衬底上时，并且使用具有其中布线图案以等间距排列在掩模上的图案线的第二光掩模进行曝光，当掩模在衬底上时，间距被转换为衬底上的第二间距Pline 图案转移到基板上，其中mxPline = nxPhole，m，n（m> n）是整数。

4. 发明授权

US07998642B2 Mask pattern data creation method and mask 有权
标题翻译：掩模图案数据创建方法和掩码
公开(公告)号：US07998642B2
公开(公告)日：2011-08-16
申请号：US12478479
申请日：2009-06-04
申请人： Chikaaki Kodama , Hirotaka Ichikawa , Kazuyuki Masukawa , Toshiya Kotani
发明人： Chikaaki Kodama , Hirotaka Ichikawa , Kazuyuki Masukawa , Toshiya Kotani
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A mask pattern data creation method includes: determining whether or not a spacing of adjacent assist pattern feature data is not more than a prescribed spacing, based on: initial position data indicating an initially set position of the assist pattern feature data determined based on an illumination condition; and initial size data indicating an initially set size of the assist pattern feature data satisfying a size condition to not optically form an image on the transfer destination; and moving at least one of the adjacent assist pattern feature data or reducing a size of the at least one to increase the spacing of the assist pattern feature data to exceed a prescribed spacing in the case where it is determined that the spacing of the assist pattern feature data is not more than the prescribed spacing.
摘要翻译：掩模图案数据创建方法包括：基于：基于指示基于照明确定的辅助图案特征数据的初始设置位置的初始位置数据来确定相邻辅助图案特征数据的间隔是否不大于规定间距条件; 以及初始尺寸数据，其指示辅助图案特征数据的初始设置尺寸，其满足不在转印目的地上光学地形成图像的尺寸条件; 以及在确定所述辅助图案的间距的情况下，移动所述相邻辅助图案特征数据中的至少一个或减小所述至少一个的尺寸以增加所述辅助图案特征数据的间隔超过规定间隔特征数据不超过规定的间距。

5. 发明申请

US20100021825A1 MASK PATTERN DATA CREATION METHOD AND MASK 有权
标题翻译：掩模图形数据创建方法和面膜
公开(公告)号：US20100021825A1
公开(公告)日：2010-01-28
申请号：US12478479
申请日：2009-06-04
申请人： Chikaaki KODAMA , Hirotaka Ichikawa , Kazuyuki Masukawa , Toshiya Kotani
发明人： Chikaaki KODAMA , Hirotaka Ichikawa , Kazuyuki Masukawa , Toshiya Kotani
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A mask pattern data creation method includes: determining whether or not a spacing of adjacent assist pattern feature data is not more than a prescribed spacing, based on: initial position data indicating an initially set position of the assist pattern feature data determined based on an illumination condition; and initial size data indicating an initially set size of the assist pattern feature data satisfying a size condition to not optically form an image on the transfer destination; and moving at least one of the adjacent assist pattern feature data or reducing a size of the at least one to increase the spacing of the assist pattern feature data to exceed a prescribed spacing in the case where it is determined that the spacing of the assist pattern feature data is not more than the prescribed spacing.
摘要翻译：掩模图案数据创建方法包括：基于：基于指示基于照明确定的辅助图案特征数据的初始设置位置的初始位置数据来确定相邻辅助图案特征数据的间隔是否不大于规定间距条件; 以及初始尺寸数据，其指示辅助图案特征数据的初始设置尺寸，其满足不在转印目的地上光学地形成图像的尺寸条件; 以及在确定所述辅助图案的间距的情况下，移动所述相邻辅助图案特征数据中的至少一个或减小所述至少一个的尺寸以增加所述辅助图案特征数据的间隔超过规定间隔特征数据不超过规定的间距。

6. 发明授权

US08293456B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08293456B2
公开(公告)日：2012-10-23
申请号：US12390157
申请日：2009-02-20
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

7. 发明授权

US08679731B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08679731B2
公开(公告)日：2014-03-25
申请号：US13606834
申请日：2012-09-07
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

8. 发明申请

US20120328992A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120328992A1
公开(公告)日：2012-12-27
申请号：US13606834
申请日：2012-09-07
申请人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
发明人： Kazuya Fukuhara , Takaki Hashimoto , Kazuyuki Masukawa , Yasunobu Kai
IPC分类号： G03F7/20
CPC分类号： G03F1/00 , G03F1/36 , G03F7/70433
摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
摘要翻译：一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

9. 发明授权

US07851914B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US07851914B2
公开(公告)日：2010-12-14
申请号：US12407613
申请日：2009-03-19
申请人： Kazuyuki Masukawa , Koji Hashimoto , Hidefumi Mukai , Kosuke Yanagidaira
发明人： Kazuyuki Masukawa , Koji Hashimoto , Hidefumi Mukai , Kosuke Yanagidaira
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit device includes a plurality of contact layers located between two lines running in parallel in a first direction. Each of the contact layers has a structure in which an upper contact and a lower contact are coupled together. The plurality of contact layers are arranged zigzag along the first direction, and coupling portions of the upper contact and the lower contact are displaced from the center of the upper contact in a second direction perpendicular to the first direction.
摘要翻译：半导体集成电路器件包括位于沿第一方向平行运行的两条线之间的多个接触层。每个接触层具有其中上触点和下触点耦合在一起的结构。所述多个接触层沿着所述第一方向被锯齿形地设置，并且所述上触点和所述下触点的耦合部分在垂直于所述第一方向的第二方向上从所述上接触件的中心位移。

10. 发明授权

US07517621B2 Exposure method and method for manufacturing semiconductor device 有权
标题翻译：半导体器件制造方法及曝光方法
公开(公告)号：US07517621B2
公开(公告)日：2009-04-14
申请号：US11896871
申请日：2007-09-06
申请人： Kazuya Fukuhara , Kenji Kawano , Kazuyuki Masukawa
发明人： Kazuya Fukuhara , Kenji Kawano , Kazuyuki Masukawa
IPC分类号： G03C5/00
CPC分类号： G03F7/213 , G03F7/70125 , G03F7/70433
摘要： An exposure method includes preparing a photomask having first and second main openings by which corresponding patterns are to be formed in a photo resist and first and second assist openings by which no corresponding patterns are to be formed in the photo resist, preparing an illumination having first and second light emitting areas, and irradiating the photo resist with illumination light from the illumination via the photomask, the first light emitting area and the second light emitting area being symmetric with respect to a center of the illumination, the first light emitting area and the second light emitting area containing a first point and a second point, respectively, the first point and the second point being symmetric with respect to the center of the illumination, the first point and the second point being symmetric with respect to a straight line extending through the center of the illumination.
摘要翻译：曝光方法包括制备具有第一和第二主开口的光掩模，通过该光掩模在光致抗蚀剂中形成相应的图案，并且在光致抗蚀剂中不形成相应图案的第一和第二辅助开口，准备具有第一和第二发光区域，并且通过光掩模照射来自照射的照明光，第一发光区域和第二发光区域相对于照明的中心对称，第一发光区域和第二发光区域分别包含第一点和第二点，第一点和第二点相对于照明中心对称，第一点和第二点相对于延伸穿过的直线对称照明的中心。

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