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1. 发明授权

US09001860B2 Laser diode device including a top electrode with first and second sections 有权
标题翻译：激光二极管器件包括具有第一和第二部分的顶部电极
公开(公告)号：US09001860B2
公开(公告)日：2015-04-07
申请号：US13310260
申请日：2011-12-02
申请人： Tomoyuki Oki , Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Hiroyuki Yokoyama
IPC分类号： H01S5/323 , H01S5/343 , B82Y20/00 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/14 , H01S5/22
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/06253 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/141 , H01S5/22
摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1
摘要翻译：激光二极管装置包括其中依次层叠有第一化合物半导体层，具有发光区域和可饱和吸收区域的第三化合物半导体层和第二化合物半导体层的层叠结构，第二电极和第一电极。层叠结构具有脊状结构。将第二电极分离为第一部分，以通过通过发光区域向第一电极施加直流电流以及通过隔离沟槽向可饱和吸收区域加电场的第二部分来获得正向偏置状态。当脊条纹结构的最小宽度为WMIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W2，1

2. 发明申请

US20120236886A1 LASER DIODE ELEMENT ASSEMBLY AND METHOD OF DRIVING THE SAME 有权
标题翻译：激光二极管元件组件及其驱动方法
公开(公告)号：US20120236886A1
公开(公告)日：2012-09-20
申请号：US13417998
申请日：2012-03-12
申请人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S5/062 , H01S5/028
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1
摘要翻译：激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b）形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1

3. 发明申请

US20120002271A1 SEMICONDUCTOR OPTICAL AMPLIFIER 有权
标题翻译：半导体光放大器
公开(公告)号：US20120002271A1
公开(公告)日：2012-01-05
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S3/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

4. 发明授权

US08786941B2 Semiconductor optical amplifier 有权
标题翻译：半导体光放大器
公开(公告)号：US08786941B2
公开(公告)日：2014-07-22
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

5. 发明申请

US20120147917A1 LASER DIODE DEVICE 有权
标题翻译：激光二极管器件
公开(公告)号：US20120147917A1
公开(公告)日：2012-06-14
申请号：US13310260
申请日：2011-12-02
申请人： Tomoyuki Oki , Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Hiroyuki Yokoyama
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/06253 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/141 , H01S5/22
摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1
摘要翻译：激光二极管装置包括其中依次层叠有第一化合物半导体层，具有发光区域和可饱和吸收区域的第三化合物半导体层和第二化合物半导体层的层叠结构，第二电极和第一电极。层叠结构具有脊状结构。将第二电极分离为第一部分，以通过通过发光区域向第一电极施加直流电流以及通过隔离沟槽向可饱和吸收区域加电场的第二部分来获得正向偏置状态。当脊条纹结构的最小宽度为WMIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W2，1

6. 发明申请

US20110103419A1 OPTICAL DEVICE 审中-公开
标题翻译：光学装置
公开(公告)号：US20110103419A1
公开(公告)日：2011-05-05
申请号：US12910046
申请日：2010-10-22
申请人： Rintaro Koda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Rintaro Koda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01S5/00 , H01S3/02 , H01S3/08
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0021 , H01S5/005 , H01S5/02212 , H01S5/02288 , H01S5/028 , H01S5/0655 , H01S5/1014 , H01S5/1085 , H01S5/14 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S5/4006
摘要： The present invention provides an optical device capable of suppressing a drive current and an optical output to be varied with a passage of the time. The optical device includes: an optical element including a first end face and a second end face, and emitting light having a wavelength from 300 nm to 600 nm both inclusive at least from the second end face in the first end face and the second end face; a pedestal including a supporting substrate supporting the optical element, and a connecting terminal electrically connected to the optical element; and a sealing section including a light transmitting window in each of a portion facing the first end face and a portion facing the second end face, and sealing the optical element.
摘要翻译：本发明提供能够抑制驱动电流和光输出随着时间的推移而变化的光学装置。光学装置包括：光学元件，包括第一端面和第二端面，并且至少从第一端面中的第二端面和第二端面发射波长为300nm至600nm的光， ; 包括支撑所述光学元件的支撑基板的基座和与所述光学元件电连接的连接端子; 以及密封部，其包括在面向所述第一端面的部分中的每一个中的透光窗口和面向所述第二端面的部分，并且密封所述光学元件。

7. 发明授权

US08483256B2 Laser diode element assembly and method of driving the same 有权
标题翻译：激光二极管元件组装及其驱动方法
公开(公告)号：US08483256B2
公开(公告)日：2013-07-09
申请号：US13417998
申请日：2012-03-12
申请人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Rintaro Koda , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/08
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1
摘要翻译：激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b）形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1

8. 发明授权

US08917753B2 Alignment method of semiconductor optical amplifier and light output device 有权
标题翻译：半导体光放大器和光输出装置的对准方法
公开(公告)号：US08917753B2
公开(公告)日：2014-12-23
申请号：US13163251
申请日：2011-06-17
申请人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/00 , B82Y20/00 , H01S5/50 , H01S5/14 , H01S5/065 , H01S5/10 , H01S5/40 , H01S5/343 , H01S5/06 , H01S5/0625 , H01S5/028
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
摘要翻译：提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。

9. 发明申请

US20120002696A1 ALIGNMENT METHOD OF SEMICONDUCTOR OPTICAL AMPLIFIER AND LIGHT OUTPUT DEVICE 有权
标题翻译：半导体光放大器和光输出装置的对准方法
公开(公告)号：US20120002696A1
公开(公告)日：2012-01-05
申请号：US13163251
申请日：2011-06-17
申请人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Rintaro Koda , Masaru Kuramoto , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/026
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
摘要翻译：提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。

10. 发明授权

US08982920B2 Submount, submount assembly, and submount assembling method 有权
标题翻译：子安装，底座装配和底座组装方法
公开(公告)号：US08982920B2
公开(公告)日：2015-03-17
申请号：US13364957
申请日：2012-02-02
申请人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
发明人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
IPC分类号： H01S5/00 , H01S5/22 , B82Y20/00 , H01S5/022 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/065 , H01S5/14 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译：提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。

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