基本信息:
- 专利标题： SEMICONDUCTOR OPTICAL AMPLIFIER
- 专利标题（中）：半导体光放大器
- 申请号：US13166900 申请日：2011-06-23
- 公开(公告)号：US20120002271A1 公开(公告)日：2012-01-05
- 发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
- 申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
- 申请人地址： JP Miyagi JP Tokyo
- 专利权人： Tohoku University,SONY CORPORATION
- 当前专利权人： Tohoku University,SONY CORPORATION
- 当前专利权人地址： JP Miyagi JP Tokyo
- 优先权： JPP2010-149345 20100630
- 主分类号： H01S3/00
- IPC分类号： H01S3/00
摘要：
A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要（中）：
半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。
公开/授权文献:
- US08786941B2 Semiconductor optical amplifier 公开/授权日：2014-07-22