专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08569177B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08569177B2
公开(公告)日：2013-10-29
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/302
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

2. 发明申请

US20130189800A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130189800A1
公开(公告)日：2013-07-25
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

3. 发明授权

US07052731B2 Plasma processing apparatus, protecting layer therefor and installation of protecting layer 失效
标题翻译：等离子体处理装置，其保护层和安装保护层
公开(公告)号：US07052731B2
公开(公告)日：2006-05-30
申请号：US10963575
申请日：2004-10-14
申请人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
发明人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
IPC分类号： B05D3/02
CPC分类号： H01J37/32559 , C23C14/568
摘要： The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant k∈ and thickness t (μm) of t/k∈
摘要翻译：以下等离子体处理装置能够抑制来自装置的等离子体处理室和允许作为接地电极的等离子体处理室中的物品的污染物的产生：其中通过产生等离子体处理工件的等离子体处理装置在处理室中，与等离子体处理室中与等离子体接触的由接地金属导体制成的一个或多个表面涂覆有等离子体耐久性聚合材料，其具有相对介电常数k∈和厚度t之间的关系（mum）t /k∈<300，或者由耐等离子体和吸水性树脂材料形成的保护层通过其膨胀然后收缩而固定到处理室中的物品的外表面。

4. 发明授权

US06914005B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US06914005B2
公开(公告)日：2005-07-05
申请号：US10085002
申请日：2002-03-01
申请人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
发明人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
IPC分类号： H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32449 , H01J37/32082
摘要： A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.
摘要翻译：一种等离子体蚀刻方法和装置，其中处理气体从布置在与用于产生等离子体或样品的电极相对的电极上的淋浴板供给到样品中心，并且将气体转化为等离子体，从而蚀刻样品。在样品台和电极之间施加RF功率以将能量施加到等离子体中的带电粒子上，从而蚀刻样品。在该过程中，除了带电粒子对样品的入射之外，带电粒子通过施加RF功率也进入电极的喷淋板。进入喷淋板的处理气体供给孔的带电粒子被中和，以防止喷淋板上的异常放电，从而抑制异物的产生。

5. 发明申请

US20050045107A1 Plasma processing apparatus, protecting layer therefor and installation of protecting layer 失效
标题翻译：等离子体处理装置，其保护层和安装保护层
公开(公告)号：US20050045107A1
公开(公告)日：2005-03-03
申请号：US10963575
申请日：2004-10-14
申请人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
发明人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
IPC分类号： C23C14/56 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32559 , C23C14/568
摘要： The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant kε and thickness t (μm) of t/kε
摘要翻译：以下等离子体处理装置能够抑制来自装置的等离子体处理室和允许作为接地电极的等离子体处理室中的物品的污染物的产生：其中通过产生等离子体处理工件的等离子体处理装置在处理室中，并且与等离子体处理室中与等离子体接触的由接地金属导电体制成的一个或多个表面涂覆有等离子体耐久性聚合材料，其具有相对介电常数kepsilon和厚度t之间的关系（妈妈）的t / kepsilon <300，或由等离子体和吸水性树脂材料形成的保护层通过其膨胀然后收缩而固定到处理室中的物品的外表面。

6. 发明申请

US20100319854A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100319854A1
公开(公告)日：2010-12-23
申请号：US12546783
申请日：2009-08-25
申请人： Kenetsu YOKOGAWA , Kenji Maeda , Tomoyuki Tamura
发明人： Kenetsu YOKOGAWA , Kenji Maeda , Tomoyuki Tamura
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32091 , H01J37/32532 , H01J37/3266
摘要： In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction.
摘要翻译：在对等离子体处理的样品进行表面处理的等离子体处理装置中，上部电极包括具有穿过其的第一气孔的喷淋板，布置在喷淋板背面的导体板，并且具有穿过其的第二气孔设置在导体板的中心部分并具有穿过其的第三气孔的绝缘板，以及设置在导体板背面并具有温度控制功能单元和气体分配单元的天线基座部件单元。在喷淋板和绝缘板之间的界面处以及在绝缘板和导体板之间的界面处，分别在径向上形成第一和第二微小间隙。第一气孔的中心在第三气孔的中心沿周向或径向偏移。

7. 发明授权

US07256404B2 Radiation detecting apparatus, scintillator panel, and radiographing system 有权
标题翻译：辐射检测装置，闪烁体面板和射线照相系统
公开(公告)号：US07256404B2
公开(公告)日：2007-08-14
申请号：US11200025
申请日：2005-08-10
申请人： Masato Inoue , Yoshihiro Ogawa , Satoshi Okada , Tomoyuki Tamura , Shinichi Takeda , Kazumi Nagano
发明人： Masato Inoue , Yoshihiro Ogawa , Satoshi Okada , Tomoyuki Tamura , Shinichi Takeda , Kazumi Nagano
IPC分类号： G01T1/20
CPC分类号： G01T1/2018
摘要： A radiation detecting apparatus having: a substrate; a phosphor layer which is formed on a principal plane of the substrate and converts a wavelength of a radiation; and a phosphor protective member including a phosphor protective layer which covers the phosphor layer and is adhered to the substrate, wherein the phosphor protective layer is made of a hot melt resin and an upper surface and a side surface of the phosphor layer and at least a part of at least one side surface of the substrate are covered with the phosphor protective layer. Thus, a moisture-proofing effect for penetration of the moisture from an interface between the phosphor layer and the substrate on the side surface side of the substrate can be improved. Further, by using the hot melt resin for the phosphor protective layer, simplification of manufacturing steps, remarkable reduction in the number of working steps, and remarkable reduction in costs of a product can be accomplished.
摘要翻译：一种放射线检测装置，具有：基板; 荧光体层，其形成在所述基板的主平面上并转换辐射的波长; 以及荧光体保护层，其包括覆盖所述荧光体层并附着在所述基板上的荧光体保护层，所述荧光体保护层由热熔树脂和所述荧光体层的上表面和侧面形成，并且至少衬底的至少一个侧表面的一部分被荧光体保护层覆盖。因此，能够提高从基板的侧面侧的荧光体层和基板的界面渗入水分的防湿效果。此外，通过使用热熔树脂作为荧光体保护层，可以实现制造步骤的简化，工序数量的显着减少以及产品成本的显着降低。

8. 发明申请

US20060033031A1 Radiation detecting apparatus, producing method therefor and radiation image pickup system 失效
标题翻译：辐射检测装置及其制造方法和放射线摄像系统
公开(公告)号：US20060033031A1
公开(公告)日：2006-02-16
申请号：US11198229
申请日：2005-08-08
申请人： Shinichi Takeda , Yoshihiro Ogawa , Masato Inoue , Satoshi Okada , Tomoyuki Tamura , Kazumi Nagano
发明人： Shinichi Takeda , Yoshihiro Ogawa , Masato Inoue , Satoshi Okada , Tomoyuki Tamura , Kazumi Nagano
IPC分类号： G01T1/20
CPC分类号： G01T1/2018
摘要： A radiation detection apparatus including a sensor panel, having a photoreceiving unit constituted of plural photoelectric converting elements two-dimensionally arranged on a substrate and electrical connecting portions provided in an external portion of the photoreceiving unit and electrically connected to the photoelectric converting elements of respective rows or columns of the photoreceiving unit, a phosphor layer provided at least on the photoreceiving unit for converting a radiation into a light detectable by the photoelectric converting element, and a phosphor protective member covering the phosphor layer and in contact with the sensor panel, characterized in that the phosphor protective member includes a frame member provided between the phosphor layer and the electric connecting portion on the sensor panel, and a phosphor protective layer covering an upper surface of the phosphor layer and provided in close contact with an upper surface of the frame member. This configuration allows to prevent a discharge of an electrostatic charge accumulated on the sensor panel, thereby providing a stable radiation detection apparatus with a high production yield.
摘要翻译：一种辐射检测装置，包括传感器面板，具有由二维布置在基板上的多个光电转换元件构成的光接收单元和设置在所述光接收单元的外部的电连接部分，并电连接到各行的光电转换元件或列，至少设置在光接收单元上用于将辐射转换成可由光电转换元件检测的光的荧光体层和覆盖荧光体层并与传感器面板接触的荧光体保护构件，其特征在于，荧光体保护构件包括设置在荧光体层和传感器面板上的电连接部分之间的框架构件，以及覆盖荧光体层的上表面并且与框架构件的上表面紧密接触地设置的荧光体保护层。这种结构允许防止积聚在传感器面板上的静电电荷的放电，从而提供具有高产量的稳定的放射线检测装置。

9. 发明授权

US5174937A Method for molding of substrate for information recording medium and method for preparing substrate for information recording medium 失效
标题翻译：信息记录介质用基板的成型方法及信息记录介质用基板的制造方法
公开(公告)号：US5174937A
公开(公告)日：1992-12-29
申请号：US622151
申请日：1990-12-03
申请人： Tomoyuki Tamura , Mizuho Hiraoka , Hiroyuki Imataki , Tetsuya Sato
发明人： Tomoyuki Tamura , Mizuho Hiraoka , Hiroyuki Imataki , Tetsuya Sato
IPC分类号： B29C33/30 , B29C33/38 , B29C35/08 , B29C39/02 , B29C39/26 , B29D17/00 , G11B7/26
CPC分类号： B29C39/26 , B29C33/306 , B29C33/3842 , B29C39/026 , B29D17/005 , B29C2035/0827 , B29L2017/003 , B29L2017/005 , G11B7/263 , Y10S425/81
摘要： A method for preparing a substrate for an information recording medium, which comprises injecting a liquid resin into a mold for cast molding of a substrate for information recording medium having a plurality of units of mold for cast molding having an uneven preformat pattern on the surface arranged therein and solidifying the resin, and a mold for molding of the substrate.
摘要翻译：一种用于制备信息记录介质用基板的方法，其特征在于，包括将液状树脂注入到用于模塑用于信息记录介质的基材的模具中，所述信息记录介质具有在表面上排列的表面上具有不均匀的预格式化图案的多个用于模塑成形的模具单元并固化树脂，以及用于模制基材的模具。

10. 发明授权

US4876042A Molding processing using a reproducible molding die 失效
标题翻译：使用可重复成型模具的成型加工
公开(公告)号：US4876042A
公开(公告)日：1989-10-24
申请号：US288456
申请日：1988-12-22
申请人： Hiroyuki Imataki , Mizuho Hiraoka , Tomoyuki Tamura , Tetsuya Satoh
发明人： Hiroyuki Imataki , Mizuho Hiraoka , Tomoyuki Tamura , Tetsuya Satoh
IPC分类号： B29C33/56 , B29C33/72
CPC分类号： B29C33/56 , B29C33/72 , B29K2905/08 , B29K2909/08 , B29L2017/003 , Y10S425/81
摘要： A reproducible molding die including a base structure having an unevenness pattern, and a cleaning layer disposed on the surface of the base structure having the unevenness pattern, wherein the cleaning layer is removable while substantially retaining the unevenness pattern of the base structure. By using above-mentioned molding die, a possible molding residue left in a molding step can easily be removed together with the cleaning layer.
摘要翻译：一种具有不平坦图案的基底结构的可复制成型模具和设置在具有凹凸图案的基底结构体的表面上的清洁层，其中清洁层是可移除的，同时基本上保持基部结构的凹凸图案。通过使用上述成型模具，可以容易地将与模制工序一起留下的成型残渣与清洗层一起除去。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式