专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08569177B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08569177B2
公开(公告)日：2013-10-29
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/302
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

2. 发明申请

US20130189800A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130189800A1
公开(公告)日：2013-07-25
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

3. 发明申请

US20050193951A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050193951A1
公开(公告)日：2005-09-08
申请号：US10793782
申请日：2004-03-08
申请人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译：本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体的材料并且包括Y 2 或其混合物作为其主要组分，其中R 1，R 2，R 3，R 3，R 3，R 3，

4. 发明申请

US20060157198A1 Member for plasma processing apparatus and plasma processing apparatus 审中-公开
标题翻译：等离子处理装置和等离子体处理装置的成员
公开(公告)号：US20060157198A1
公开(公告)日：2006-07-20
申请号：US11065084
申请日：2005-02-25
申请人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
发明人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/3255 , H01J37/32009
摘要： Provided is a plasma processing apparatus, which comprises, as a member facing plasma in a plasma processing chamber, a member composed of a material prepared by incorporating a conductive material in quartz or germanium which is an amorphous base material.
摘要翻译：提供了一种等离子体处理装置，其包括作为在等离子体处理室中面向等离子体的构件，由通过将石英或锗中的导电材料并入作为非晶基材而制备的材料构成的构件。

5. 发明授权

US07052731B2 Plasma processing apparatus, protecting layer therefor and installation of protecting layer 失效
标题翻译：等离子体处理装置，其保护层和安装保护层
公开(公告)号：US07052731B2
公开(公告)日：2006-05-30
申请号：US10963575
申请日：2004-10-14
申请人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
发明人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
IPC分类号： B05D3/02
CPC分类号： H01J37/32559 , C23C14/568
摘要： The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant k∈ and thickness t (μm) of t/k∈
摘要翻译：以下等离子体处理装置能够抑制来自装置的等离子体处理室和允许作为接地电极的等离子体处理室中的物品的污染物的产生：其中通过产生等离子体处理工件的等离子体处理装置在处理室中，与等离子体处理室中与等离子体接触的由接地金属导体制成的一个或多个表面涂覆有等离子体耐久性聚合材料，其具有相对介电常数k∈和厚度t之间的关系（mum）t /k∈<300，或者由耐等离子体和吸水性树脂材料形成的保护层通过其膨胀然后收缩而固定到处理室中的物品的外表面。

6. 发明授权

US06914005B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US06914005B2
公开(公告)日：2005-07-05
申请号：US10085002
申请日：2002-03-01
申请人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
发明人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
IPC分类号： H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32449 , H01J37/32082
摘要： A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.
摘要翻译：一种等离子体蚀刻方法和装置，其中处理气体从布置在与用于产生等离子体或样品的电极相对的电极上的淋浴板供给到样品中心，并且将气体转化为等离子体，从而蚀刻样品。在样品台和电极之间施加RF功率以将能量施加到等离子体中的带电粒子上，从而蚀刻样品。在该过程中，除了带电粒子对样品的入射之外，带电粒子通过施加RF功率也进入电极的喷淋板。进入喷淋板的处理气体供给孔的带电粒子被中和，以防止喷淋板上的异常放电，从而抑制异物的产生。

7. 发明申请

US20050045107A1 Plasma processing apparatus, protecting layer therefor and installation of protecting layer 失效
标题翻译：等离子体处理装置，其保护层和安装保护层
公开(公告)号：US20050045107A1
公开(公告)日：2005-03-03
申请号：US10963575
申请日：2004-10-14
申请人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
发明人： Kunihiko Koroyasu , Muneo Furuse , Tomoyuki Tamura
IPC分类号： C23C14/56 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32559 , C23C14/568
摘要： The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant kε and thickness t (μm) of t/kε
摘要翻译：以下等离子体处理装置能够抑制来自装置的等离子体处理室和允许作为接地电极的等离子体处理室中的物品的污染物的产生：其中通过产生等离子体处理工件的等离子体处理装置在处理室中，并且与等离子体处理室中与等离子体接触的由接地金属导电体制成的一个或多个表面涂覆有等离子体耐久性聚合材料，其具有相对介电常数kepsilon和厚度t之间的关系（妈妈）的t / kepsilon <300，或由等离子体和吸水性树脂材料形成的保护层通过其膨胀然后收缩而固定到处理室中的物品的外表面。

8. 发明申请

US20080236744A1 Plasma etching equipment 审中-公开
标题翻译：等离子体蚀刻设备
公开(公告)号：US20080236744A1
公开(公告)日：2008-10-02
申请号：US11896293
申请日：2007-08-30
申请人： Muneo Furuse , Shingo Kimura , Tadayoshi Kawaguchi
发明人： Muneo Furuse , Shingo Kimura , Tadayoshi Kawaguchi
IPC分类号： H01L21/306
CPC分类号： H01J37/32477 , H01J37/32623
摘要： To provide a plasma processing equipment that can reduce the particles or contamination in a sample by suppressing the occurrence of an abnormal electric discharge during processing. The plasma processing equipment that employs a plasma process using a halogen-based gas in fabricating a semiconductor device, wherein a plasma sprayed coating film is applied to a surface of a well, such as a wall in a processing chamber, which plasma is in constant with, and wherein a conductor is incorporated into a material of this plasma sprayed coating film, thereby making the plasma sprayed coating film conductive.
摘要翻译：提供能够通过抑制处理时的异常放电的发生而能够减少样品中的颗粒或污染的等离子体处理设备。在制造半导体器件中采用基于卤素气体的等离子体处理设备的等离子体处理设备，其中将等离子体喷涂的涂膜施加到诸如处理室中的壁的表面，该等离子体处于恒定的状态并且其中将导体结合到该等离子体喷涂涂膜的材料中，从而使等离子体喷涂涂膜成为导电性。

9. 发明授权

US08197704B2 Plasma processing apparatus and method for operating the same 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US08197704B2
公开(公告)日：2012-06-12
申请号：US12397447
申请日：2009-03-04
申请人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
发明人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
IPC分类号： C03C15/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67017
摘要： The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port 233 on a side wall of a depressurized processing chamber (V1) 226 of a plasma processing apparatus, and the interior of the processing chamber (V1) 226 is brought to predetermined pressure by the inert gas, and thereafter, the inert gas is supplied to processing gas supply paths 213 and 216 (V2) communicated to a plurality of through holes 224 for introducing processing gas, so as to introduce the inert gas through the plurality of through holes 224 into the processing chamber (V1) 226.
摘要翻译：本发明提供一种等离子体处理装置和一种清洗装置的方法，能够防止在真空反应器的净化操作期间由压力差引起的部件的损坏，并且能够防止残留的处理气体残留在真空反应器中。惰性气体通过等离子体处理装置的减压处理室（V1）226的侧壁上的惰性气体供给口233引入，处理室（V1）226的内部被惰性气体然后将惰性气体供给到与多个用于引入处理气体的通孔224连通的处理气体供给路径213,216（V2），以将惰性气体通过多个通孔224引入到处理室（V1）226。

10. 发明授权

US08006340B2 Cleaning apparatus 有权
标题翻译：清洁装置
公开(公告)号：US08006340B2
公开(公告)日：2011-08-30
申请号：US12285177
申请日：2008-09-30
申请人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
发明人： Kazuyuki Ikenaga , Tsutomu Tetsuka , Muneo Furuse
IPC分类号： A47L13/40
CPC分类号： H01L21/67028 , C23C16/4407 , H01L21/67092
摘要： The invention provides a cleaning apparatus for removing particles attached to the fine roughness on the surface of an insulating body coated on the metal surface of a vacuum processing apparatus. The present cleaning apparatus comprises an adhesive sheet 5 having a base material 51 and an adhesive surface 52, a conductive sheet 7 in contact with the base material 51, and a pressing member 11 for pressing the conductive sheet 7 onto the adhesive sheet 5, a voltage applying mechanism 9 for applying positive or negative voltage to the conductive sheet 7, and a pressing force controlling mechanism 8 for pressing the adhesive sheet 5 onto the curved surface 10 of the vacuum processing apparatus, wherein the pressing member 11 presses the conductive sheet 7 and the adhesive sheet 5 by a pressing force controlled via the pressing force controlling mechanism 8 in order to closely adhere the adhesive surface 52 of the adhesive sheet 5 to the curved surface of the insulating body 10 so as to remove particles attached to the insulating body 10, and positive or negative voltage is applied to the conductive sheet 7 to generate electrostatic attraction force so as to attract and remove particles attached to the insulating body 10.
摘要翻译：本发明提供了一种用于除去附着在涂覆在真空处理装置的金属表面上的绝缘体表面上的微细粗糙度的颗粒的清洁装置。本清洁装置包括具有基材51和粘合表面52的粘合片5，与基材51接触的导电片7和用于将导电片7压在粘合片5上的按压部件11，用于向导电片7施加正电压或负电压的电压施加机构9和用于将粘合片5压在真空处理装置的曲面10上的按压力控制机构8，其中按压部件11按压导电片7 和通过压力控制机构8控制的压力的粘合片5，以便将粘合片5的粘合表面52紧密地粘合到绝缘体10的弯曲表面，以除去附着在绝缘体上的颗粒如图10所示，并且正电压或负电压施加到导电片7以产生静电吸引力以便吸引和去除连接到绝缘体10的密封件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式