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1. 发明授权

US4774556A Non-volatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US4774556A
公开(公告)日：1988-09-27
申请号：US887625
申请日：1986-07-21
申请人： Tetsuo Fujii , Nobuyoshi Sakakibara , Toshio Sakakibara , Hiroshi Iwasaki
发明人： Tetsuo Fujii , Nobuyoshi Sakakibara , Toshio Sakakibara , Hiroshi Iwasaki
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/78 , H01L29/86
CPC分类号： H01L27/11568 , H01L21/28273 , H01L27/11556 , H01L29/66825 , H01L29/7881 , H01L29/7883 , H01L27/115 , H01L29/4236
摘要： A non-volatile semiconductor memory device comprises a semiconductor substrate of a first conduction type, an impurity buried layer of a second conduction type formed at the surface of the semiconductor substrate for constituting either one of a drain region or a source region, an epitaxial layer of a second conduction type formed at the surface of said impurity buried layer, an insulatiang partition wall extended vertically from the surface of the epitaxial layer surrounding operation regions in the impurity buried layer for defining the operation regions therein, at least one electron holding portion extended vertically with a predetermined distance from the operation regions and disposed within the insulating partition wall apart from the operation region, the impurity buried layer or the drain region by an insulation film of such a thickness as causing a tunnel effect, control gates disposed within the insulation partition wall disposed on every electron holding portions on the side opposite to the operation regions and extended vertically with a certain gap from the electron maintaining portions, and a control gate disposed within the insulating partition wall on every electron holding portions on the opposite side to the operation region extended vertically and with a certain gap to the electron holding portions, and an impurity region of a second conduction type formed at the surface of the operation region for constituting the other of the drain region or the source region.
摘要翻译：非易失性半导体存储器件包括：第一导电类型的半导体衬底，形成在半导体衬底的表面的第二导电类型的杂质掩埋层，用于构成漏极区域或源极区域中的任一个，外延层形成在所述杂质掩埋层的表面上的第二导电类型的绝缘分隔壁，包围在所述杂质掩埋层中的围绕所述杂质掩埋层的操作区域的外延层的表面垂直延伸的绝缘隔壁，用于限定其中的操作区域，至少一个电子保持部分延伸垂直于操作区域预定的距离并且设置在与操作区域隔离的绝缘分隔壁内，通过具有隧道效应的厚度的绝缘膜的杂质掩埋层或漏极区域，设置在绝缘体内的控制栅极分隔壁设置在侧面上的每个电子保持部分上 e与操作区域相对并且与电子维持部分具有一定间隙垂直延伸;以及控制栅极，设置在绝缘分隔壁内的每个电子保持部分上，与操作区域相对的一侧垂直延伸并且具有一定间隙电子保持部分和形成在用于构成漏极区域或源极区域中的另一个的操作区域的表面处的第二导电类型的杂质区域。

2. 发明授权

US5017505A Method of making a nonvolatile semiconductor memory apparatus with a floating gate 失效
标题翻译：制造具有浮动栅极的非易失性半导体存储装置的方法
公开(公告)号：US5017505A
公开(公告)日：1991-05-21
申请号：US313898
申请日：1989-02-23
申请人： Tetsuo Fujii , Toshio Sakakibara , Nobuyoshi Sakakibara
发明人： Tetsuo Fujii , Toshio Sakakibara , Nobuyoshi Sakakibara
IPC分类号： H01L29/788
CPC分类号： H01L29/7883 , Y10S438/964
摘要： A first polysilicon film serving as an erase gate is deposited on the major surface of a semiconductor substrate on which a field oxide film is formed, so that the surface of the first polysilicon film is roughened. The surface of the first polysilicon film is thermally oxidized to form a first thermal oxide film thereon. During the oxidation, the roughened surface of the first polysilicon film is flattened, and is duplicated by the surface of the first thermal oxide film. A second polysilicon film is deposited on the roughened surface of the first thermal oxide film. The back surface of the second polysilicon film is roughened by the roughened surface of the first thermal oxide film. In this case, the surface of the second polysilicon film is also roughened. The roughened surface of the second polysilicon film is thermally oxidized in the same manner as described above to flatten its surface and to form a second thermal oxide film, the surface of which is roughened. A third polysilicon film serving as a write gate is formed on the second thermal oxide film.
摘要翻译：用作擦除栅极的第一多晶硅膜沉积在其上形成有场氧化膜的半导体衬底的主表面上，使得第一多晶硅膜的表面被粗糙化。第一多晶硅膜的表面被热氧化以在其上形成第一热氧化膜。在氧化期间，第一多晶硅膜的粗糙化表面变平，并被第一热氧化膜的表面复制。在第一热氧化膜的粗糙化表面上沉积第二多晶硅膜。第二多晶硅膜的背面被第一热氧化膜的粗糙化表面粗糙化。在这种情况下，第二多晶硅膜的表面也被粗糙化。第二多晶硅膜的粗糙化表面以与上述相同的方式被热氧化以使其表面变平，并形成第二热氧化膜，其表面被粗糙化。在第二热氧化膜上形成用作写入栅极的第三多晶硅膜。

3. 发明授权

US09341513B2 Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device 有权
标题翻译：具有光吸收层的光检测元件，具有光吸收层的光电检测元件和自动照明器件
公开(公告)号：US09341513B2
公开(公告)日：2016-05-17
申请号：US13570233
申请日：2012-08-08
申请人： Shunsuke Akasaka , Tetsuo Fujii , Koki Sakamoto
发明人： Shunsuke Akasaka , Tetsuo Fujii , Koki Sakamoto
IPC分类号： H01L31/0232 , G01J1/42 , G01J1/04 , H01L31/0203 , H01L31/0224 , H01L31/09
CPC分类号： G01J1/4204 , G01J1/0488 , G01J1/429 , H01L31/0203 , H01L31/0224 , H01L31/09
摘要： To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.
摘要翻译：为了提供可以防止多个电流路径的产生的光检测元件和光电检测器件，并且不管光吸收层的表面状态不稳定，都可以以稳定性和高灵敏度进行检测。光检测元件包括光学透明基板，光吸收层，电极，电极，粘合剂层，绝缘膜和封装。光学吸收层形成在光学透明基板上，并且每个电极的一部分嵌入在光吸收层中。光电检测单元与封装上的粘合剂层接合结合。光吸收层选择性地吸收特定波长的光以转换成电信号。从光学透明基板的背面侧照射被测光。

4. 发明授权

US08759926B2 Semiconductor physical quantity sensor 有权
标题翻译：半导体物理量传感器
公开(公告)号：US08759926B2
公开(公告)日：2014-06-24
申请号：US13033941
申请日：2011-02-24
申请人： Tetsuo Fujii , Keisuke Gotoh
发明人： Tetsuo Fujii , Keisuke Gotoh
IPC分类号： G11C11/15
CPC分类号： G01P15/0802 , B81B7/0006 , B81B2201/0235 , B81B2203/0307 , B81B2207/095 , G01P15/125 , G01P2015/0814 , G01P2015/0877 , G01P2015/088 , H01L2224/48463
摘要： In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.
摘要翻译：在半导体物理量传感器中，在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。准备具有由电绝缘材料制成的表面的支撑基板。第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。此外，在第一半导体衬底中形成传感器结构。传感器结构电连接到布线图案。将盖接合到第一半导体基板，使得传感器结构被气密密封。

5. 发明授权

US08455973B2 Region divided substrate and semiconductor device 失效
标题翻译：区域划分衬底和半导体器件
公开(公告)号：US08455973B2
公开(公告)日：2013-06-04
申请号：US12902696
申请日：2010-10-12
申请人： Tetsuo Fujii , Masaya Tanaka , Keisuke Gotoh
发明人： Tetsuo Fujii , Masaya Tanaka , Keisuke Gotoh
IPC分类号： H01L21/00
CPC分类号： H01L21/76898 , G01P15/0802 , G01P15/125 , G01P2015/0877 , G01P2015/088 , H01L23/481 , H01L24/16 , H01L24/73 , H01L24/81 , H01L25/0655 , H01L25/16 , H01L2224/17181 , H01L2224/2929 , H01L2224/293 , H01L2224/73257 , H01L2224/80097 , H01L2224/80099 , H01L2224/80896 , H01L2224/81075 , H01L2224/81805 , H01L2224/81894 , H01L2224/83851 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01056 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/1461 , H01L2924/3025 , H01L2924/351 , H01L2224/29075 , H01L2924/00014 , H01L2924/00
摘要： A region divided substrate includes a substrate, a plurality of trenches, a conductive layer, and an insulating member. The substrate has a first surface and a second surface opposed to each other. The trenches penetrate the substrate from the first surface to the second surface and divide the substrate into a plurality of partial regions. The conductive layer is disposed on a sidewall of each of the trenches from a portion adjacent to the first surface to a portion adjacent to the second surface. The conductive layer has an electric conductivity higher than an electric conductivity of the substrate. The insulating member fills each of the trenches through the conductive layer.
摘要翻译：区域分割衬底包括衬底，多个沟槽，导电层和绝缘构件。基板具有彼此相对的第一表面和第二表面。沟槽从第一表面穿过基板到第二表面，并将基板分成多个部分区域。导电层设置在每个沟槽的侧壁上，从与第一表面相邻的部分到与第二表面相邻的部分。导电层的导电率高于基板的电导率。绝缘构件通过导电层填充每个沟槽。

6. 发明授权

US08413507B2 Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
标题翻译：半导体动态量传感器及其制造方法
公开(公告)号：US08413507B2
公开(公告)日：2013-04-09
申请号：US12801405
申请日：2010-06-08
申请人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
发明人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
IPC分类号： G01C19/56 , G01P15/125
CPC分类号： H01L27/1203 , B81B2201/025 , B81B2201/0257 , B81B2201/0285 , B81B2201/047 , B81C1/00182 , G01C19/5755 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/84
摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.
摘要翻译：半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。主表面具有横截面为梯形或三角形的突起。半导体层由通孔分割成可动部。突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。突起的尖端的宽度小于基板的平面方向上的可动部的宽度。突起的尖端和可动部之间的距离等于绝缘层的厚度。

7. 发明授权

US08390106B2 Circuit board with built-in semiconductor chip and method of manufacturing the same 有权
标题翻译：具有内置半导体芯片的电路板及其制造方法相同
公开(公告)号：US08390106B2
公开(公告)日：2013-03-05
申请号：US13076525
申请日：2011-03-31
申请人： Yukihiro Maeda , Kouji Kondoh , Yoshiharu Harada , Takeshi Yamauchi , Tetsuo Fujii
发明人： Yukihiro Maeda , Kouji Kondoh , Yoshiharu Harada , Takeshi Yamauchi , Tetsuo Fujii
IPC分类号： H01L23/02
CPC分类号： H05K3/4632 , H01L23/145 , H01L23/3128 , H01L23/367 , H01L23/3677 , H01L23/49894 , H01L23/5389 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/05624 , H01L2224/1134 , H01L2224/13144 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73259 , H01L2224/81203 , H01L2224/83192 , H01L2224/92224 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/351 , H05K1/0206 , H05K1/185 , H05K3/0061 , H05K2201/096 , H05K2201/10674 , H05K2203/063 , H01L2924/00 , H01L2924/3512 , H01L2224/8384 , H01L2924/00014
摘要： A circuit board includes an insulating member and a semiconductor chip encapsulated with the thermoplastic resin portion of the insulating member. A wiring member is located in the insulating member and electrically connected to first and second electrodes on respective sides of the semiconductor chip. The wiring member includes a pad, an interlayer connection member, and a connection portion. A diffusion layer is located between the first electrode and the connection portion, between the pad and the connection portion, and between the second electrode and the interlayer connection member. At least one element of the interlayer connection member has a melting point lower than a glass-transition point of the thermoplastic resin portion. The connection portion is made of material having a melting point higher than a melting point of the thermoplastic resin portion.
摘要翻译：电路板包括绝缘构件和用绝缘构件的热塑性树脂部分封装的半导体芯片。布线构件位于绝缘构件中并且电连接到半导体芯片的相应侧上的第一和第二电极。布线构件包括垫，层间连接构件和连接部。扩散层位于第一电极和连接部分之间，焊盘和连接部分之间，以及第二电极和层间连接部件之间。层间连接部件的至少一个元件的熔点低于热塑性树脂部分的玻璃化转变点。连接部由熔点高于热塑性树脂部分的熔点的材料制成。

8. 发明授权

US08169082B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08169082B2
公开(公告)日：2012-05-01
申请号：US13287188
申请日：2011-11-02
申请人： Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
发明人： Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号： H01L23/48
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

9. 发明申请

US20120025874A1 SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE AND METHOD FOR CONTROLLING THE SAME 有权
标题翻译：具有切换元件和自由轮二极管的半导体器件及其控制方法
公开(公告)号：US20120025874A1
公开(公告)日：2012-02-02
申请号：US13190798
申请日：2011-07-26
申请人： Hirotaka Saikaku , Tsuyoshi Yamamoto , Shoji Mizuno , Masakiyo Sumitomo , Tetsuo Fujii , Jun Sakakibara , Hitoshi Yamaguchi , Yoshiyuki Hattori , Rie Taguchi , Makoto Kuwahara
发明人： Hirotaka Saikaku , Tsuyoshi Yamamoto , Shoji Mizuno , Masakiyo Sumitomo , Tetsuo Fujii , Jun Sakakibara , Hitoshi Yamaguchi , Yoshiyuki Hattori , Rie Taguchi , Makoto Kuwahara
IPC分类号： H03K17/06 , H01L29/739
CPC分类号： H01L29/7813 , H01L27/0629 , H01L27/0635 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/4983 , H01L29/66734 , H01L29/7391 , H01L29/7393 , H01L29/7397 , H01L29/7398 , H01L29/7805 , H01L29/7819 , H01L29/7825 , H01L29/7831 , H01L29/861 , H01L2924/0002 , H02M7/003 , H01L2924/00
摘要： A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.
摘要翻译：一种半导体器件包括：具有漂移层的开关元件; 基地区在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。

10. 发明授权

US07893458B2 Semiconductor device having lateral MOS transistor and zener diode 有权
标题翻译：具有横向MOS晶体管和齐纳二极管的半导体器件
公开(公告)号：US07893458B2
公开(公告)日：2011-02-22
申请号：US11892819
申请日：2007-08-28
申请人： Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人： Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yasushi Higuchi , Tetsuo Fujii , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号： H01L29/74 , H01L29/76
CPC分类号： H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/42356 , H01L29/42368 , H01L29/4238 , H01L29/7817 , H01L29/7821
摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.
摘要翻译：半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。该设备具有最小的尺寸和高切换速度。此外，改善了开关损耗和浪涌电压两者。

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