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1. 发明申请

US20150344293A1 INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METHODS OF MANUFACTURE AND DESIGN STRUCTURE 有权
标题翻译：具有单晶光束的集成半导体器件，制造方法和设计结构
公开(公告)号：US20150344293A1
公开(公告)日：2015-12-03
申请号：US14821997
申请日：2015-08-10
申请人： GLOBALFOUNDRIES Inc.
发明人： David L. HARAME , Anthony K. STAMPER
IPC分类号： B81B3/00
CPC分类号： B81B3/0027 , B81B2201/0285 , H01L21/84 , H01L27/1203 , H01L41/1136 , H01L2224/73265 , H03H3/02 , H03H9/1007 , H03H9/173 , H03H2001/0064 , H03H2003/027 , H03H2009/155 , H03H2009/241
摘要： Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
摘要翻译：提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。该方法包括从绝缘体上的硅层形成单晶束。该方法还包括在单晶束上提供绝缘体材料涂层。该方法还包括通过暴露出绝缘体下方的晶片的绝缘体材料形成通孔。绝缘体材料保留在单晶束上。该方法还包括在通孔和绝缘体材料上提供牺牲材料。该方法还包括在牺牲材料上提供盖子。该方法进一步包括通过盖子排出牺牲材料和在单一结晶束下方的晶片的一部分，以在单晶束之下形成单结晶束上方的上腔和晶片中的下腔。

2. 发明授权

US08601871B2 Physical quantity sensor and method of making the same 有权
公开(公告)号：US08601871B2
公开(公告)日：2013-12-10
申请号：US13711911
申请日：2012-12-12
申请人： DENSO CORPORATION , Toyota Jidosha Kabushiki Kaisha
发明人： Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
IPC分类号： G01D11/24
CPC分类号： G01C19/56 , B81B7/0058 , B81B2201/0235 , B81B2201/0285 , G01D18/00 , G01P15/08 , H01L2224/48247 , H05K13/00 , Y10T29/49002 , Y10T29/49117 , Y10T29/49826
摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

3. 发明授权

US08413507B2 Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
标题翻译：半导体动态量传感器及其制造方法
公开(公告)号：US08413507B2
公开(公告)日：2013-04-09
申请号：US12801405
申请日：2010-06-08
申请人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
发明人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
IPC分类号： G01C19/56 , G01P15/125
CPC分类号： H01L27/1203 , B81B2201/025 , B81B2201/0257 , B81B2201/0285 , B81B2201/047 , B81C1/00182 , G01C19/5755 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/84
摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.
摘要翻译：半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。主表面具有横截面为梯形或三角形的突起。半导体层由通孔分割成可动部。突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。突起的尖端的宽度小于基板的平面方向上的可动部的宽度。突起的尖端和可动部之间的距离等于绝缘层的厚度。

4. 发明申请

US20120187077A1 MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) MICROPHONE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：微机电系统（MEMS）麦克风及其制造方法
公开(公告)号：US20120187077A1
公开(公告)日：2012-07-26
申请号：US13434622
申请日：2012-03-29
申请人： Jae Woo LEE , Kang Ho PARK , Jong Dae KIM
发明人： Jae Woo LEE , Kang Ho PARK , Jong Dae KIM
IPC分类号： H05K3/06
CPC分类号： B81C1/00182 , B81B2201/0235 , B81B2201/0257 , B81B2201/0285 , H04R3/00 , H04R19/005 , H04R31/00 , H04R2201/003
摘要： Provided are a micro-electromechanical systems (MEMS) microphone and a method of manufacturing the same. A manufacturing process is simplified compared to a conventional art using both upper and lower substrate processes. Since defects which may occur during manufacturing are reduced due to the simplified manufacturing process, the manufacturing throughput is improved, and since durability of the MEMS microphone is improved, system stability against the external environment is improved.
摘要翻译：提供了一种微机电系统（MEMS）麦克风及其制造方法。与使用上基板工艺和下基板工艺的常规技术相比，制造工艺简化。由于制造过程中可能发生的缺陷由于简化的制造过程而降低，所以提高了制造生产能力，并且由于提高了MEMS麦克风的耐久性，提高了对外部环境的系统稳定性。

5. 发明授权

US07891244B2 Method of making a physical quantity sensor 有权
标题翻译：物理量传感器的制作方法
公开(公告)号：US07891244B2
公开(公告)日：2011-02-22
申请号：US12453485
申请日：2009-05-12
申请人： Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
发明人： Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
IPC分类号： G01P1/02
CPC分类号： G01C19/56 , B81B7/0058 , B81B2201/0235 , B81B2201/0285 , G01D18/00 , G01P15/08 , H01L2224/48247 , H05K13/00 , Y10T29/49002 , Y10T29/49117 , Y10T29/49826
摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.
摘要翻译：物理量传感器包括传感器部分，壳体和隔振器。壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。隔振器减小传感器部分和壳体之间的相对振动。

6. 发明申请

US20180002164A1 SEMICONDUCTOR SENSOR DEVICE 审中-公开
公开(公告)号：US20180002164A1
公开(公告)日：2018-01-04
申请号：US15545922
申请日：2016-01-08
申请人： Hitachi Automotive Systems, Ltd.
发明人： Munenori DEGAWA , Hiroshi KIKUCHI , Akihiro OKAMOTO , Masashi YURA , Masahide HAYASHI
IPC分类号： B81B7/00 , B81B3/00
CPC分类号： B81B7/0041 , B81B3/00 , B81B3/0021 , B81B2201/0235 , B81B2201/0285 , G01C19/5747 , G01C19/5769 , G01P15/08 , G01P15/125 , G01P15/18 , H01L29/84 , H01L2224/32145 , H01L2224/32245 , H01L2224/48145 , H01L2224/48247 , H01L2224/73265 , H01L2924/00 , H01L2924/00012
摘要： The purpose of the present invention is to improve the pressure resistance of a cavity in a semiconductor sensor device employing a resin package, and to do so without adversely affecting the embeddability of an electrically conductive member. The semiconductor sensor device has a gap 1a sealed in an airtight manner inside a laminate structure of a plurality of laminated substrates 1, 4, and 5, and has a structure in which the outside of the laminate structure is covered by a resin, wherein a platy component 2 having at least one side that is greater in length than the length of one side of the gap 1a along this side is arranged to the outside of an upper wall 1b of the gap 1, the upper wall 1b of the gap being mechanically suspended by the platy component 2.

7. 发明授权

US09571938B2 Microphone element and device for detecting acoustic and ultrasound signals 有权
标题翻译：用于检测声和超声信号的麦克风元件和装置
公开(公告)号：US09571938B2
公开(公告)日：2017-02-14
申请号：US14558993
申请日：2014-12-03
申请人： Robert Bosch GmbH
发明人： Christoph Schelling , Rolf Scheben , Ricardo Ehrenpfordt
IPC分类号： H04R23/00 , H04R19/00 , B81B3/00 , H04R19/04 , H04R29/00
CPC分类号： H04R19/005 , B81B3/0018 , B81B3/0021 , B81B2201/0221 , B81B2201/0257 , B81B2201/0285 , H04R19/04 , H04R29/004
摘要： A capacitive MEMS microphone element is described which may be used optionally for detecting acoustic signals (microphone mode) or for detecting ultrasound signals in a defined frequency range (ultrasound mode). In the layered structure of the MEMS microphone element, at least two carrier elements for the two electrode sides of a capacitor system are formed one above the other and at a distance from one another for signal detection. At least one of the two carrier elements is sound pressure-sensitive and at least one of the two electrode sides includes at least two electrode segments which are electrically contactable independent of one another, which together with the at least one electrode of the other electrode side form partial capacitances which are independent of one another.
摘要翻译：描述了可以可选地用于检测声信号（麦克风模式）或用于在限定的频率范围（超声模式）中检测超声信号的电容式MEMS麦克风元件。在MEMS麦克风元件的分层结构中，用于电容器系统的两个电极侧的至少两个载体元件彼此之间并且彼此间隔一定距离地形成用于信号检测。两个载体元件中的至少一个是声压敏的，并且两个电极侧中的至少一个包括彼此独立地电接触的至少两个电极段，这两个电极段与另一个电极侧的至少一个电极形成彼此独立的部分电容。

8. 发明申请

US20160097642A1 MEMS SENSOR MODULE, VIBRATION DRIVING MODULE, AND MEMS SENSOR 审中-公开
标题翻译： MEMS传感器模块，振动驱动模块和MEMS传感器
公开(公告)号：US20160097642A1
公开(公告)日：2016-04-07
申请号：US14970844
申请日：2015-12-16
申请人： Murata Manufacturing Co., Ltd.
发明人： Tsuyoshi Okami , Nobuaki TSUJI , Hidekazu ONO
IPC分类号： G01C19/5712 , H02N1/00
CPC分类号： G01C19/5712 , B81B3/0037 , B81B2201/0285 , B81B2203/0136 , B81B2203/019 , G01C19/5747 , H02N1/008
摘要： A MEMS sensor module of the present invention, in particular, a vibration driving module includes: a movable electrode supported such that the movable electrode is able to be vibrated, the movable electrode extending in a vibration direction; a fixed electrode provided substantially in parallel with the movable electrode and extending in the vibration direction; a plurality of projection portions provided side by side on a facing wall surface of the movable electrode in the vibration direction, the facing wall surface of the movable electrode facing the fixed electrode; and a plurality of projection portions provided on a facing wall surface of the fixed electrode, the facing wall surface of the fixed electrode facing the movable electrode, the plurality of projection portions of the fixed electrode facing the projection portions of the movable electrode.
摘要翻译：本发明的MEMS传感器模块，特别是振动驱动模块，其特征在于，包括：可动电极，其以可动电极振动的方式被支撑，所述可动电极沿振动方向延伸; 固定电极，其与所述可动电极大致平行地设置并沿振动方向延伸; 在可动电极的振动方向的面对壁面上并排设置的多个突出部，可动电极的面对固定电极的面对壁面; 以及设置在所述固定电极的相对壁面上的多个突出部，所述固定电极的面对所述可动电极的所述面对壁面，所述固定电极的所述多个突起部与所述可动电极的突出部相对。

9. 发明授权

US09282415B2 Electromechanical transducer and method for manufacturing the same which suppresses lowering of sensitivity while a protective layer is formed 有权
标题翻译：机电换能器及其制造方法，其在形成保护层时抑制灵敏度的降低
公开(公告)号：US09282415B2
公开(公告)日：2016-03-08
申请号：US13794412
申请日：2013-03-11
申请人： CANON KABUSHIKI KAISHA
发明人： Chienliu Chang
IPC分类号： B81B3/00 , B06B1/02 , H04R19/00 , H04R31/00 , B81C1/00
CPC分类号： B81C1/00158 , B06B1/0292 , B81B2201/0285 , H04R19/005 , H04R31/00 , H04R2201/003 , Y10T29/49005 , Y10T29/49007
摘要： An electromechanical transducer of the present invention includes a first electrode, a vibrating membrane formed above the first electrode through a gap, a second electrode formed on the vibrating membrane, and an insulating protective layer formed on a surface of the second electrode side. A region where the protective layer is not formed is present on at least part of a surface of the vibrating membrane.
摘要翻译：本发明的机电换能器包括第一电极，通过间隙形成在第一电极上方的振动膜，形成在振动膜上的第二电极和形成在第二电极侧的表面上的绝缘保护层。在振动膜的表面的至少一部分上存在未形成保护层的区域。

10. 发明授权

US09089055B2 Electronic device, method of manufacturing the same, and oscillator 有权
标题翻译：电子装置及其制造方法以及振荡器
公开(公告)号：US09089055B2
公开(公告)日：2015-07-21
申请号：US14018686
申请日：2013-09-05
申请人： Seiko Epson Corporation
发明人： Yoji Kitano , Norio Okuyama
IPC分类号： H01L23/053 , H05K5/02 , B81B7/00
CPC分类号： H05K5/0217 , B81B7/0041 , B81B2201/0285 , B81B2203/0118 , B81C2203/0136 , B81C2203/0145 , B81C2203/0163 , H01L23/053 , H01L2924/0002 , Y10T29/49002 , H01L2924/00
摘要： An electronic device includes a substrate, a cavity part formed above the substrate with a functional device placed therein, a coating structure that defines the cavity part, and the coating structure has a first surrounding wall formed around the cavity part above the substrate, a second surrounding wall formed around the cavity part above the first surrounding wall, a coating layer that defines an upper surface of the cavity part, wherein the second surrounding wall is located inside the first surrounding wall in a plan view.
摘要翻译：一种电子设备，包括：衬底，形成在衬底上方的功能器件的空腔部分，其中限定空腔部分的涂层结构，并且涂层结构具有围绕衬底上方的空腔部分形成的第一环绕壁，形成在第一周围壁上方的空腔部分周围的围绕壁，其形成限定空腔部分的上表面的涂层，其中第二周围壁在俯视图中位于第一周围壁的内部。

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