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1. 发明申请

US20120049381A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120049381A1
公开(公告)日：2012-03-01
申请号：US13287188
申请日：2011-11-02
申请人： Tetsuo FUJII , Akitoshi Yamanaka , Hisanori Yokura
发明人： Tetsuo FUJII , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
摘要翻译：半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。盖包括在盖的第二面上的第一布线层。第一布线层跨越周边元件。传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。传感器侧连接部分接合到盖侧连接部分。传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。

2. 发明授权

US08089144B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08089144B2
公开(公告)日：2012-01-03
申请号：US12654087
申请日：2009-12-10
申请人： Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
发明人： Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号： H01L23/48
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
摘要翻译：半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。盖包括在盖的第二面上的第一布线层。第一布线层跨越周边元件。传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。传感器侧连接部分接合到盖侧连接部分。传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。

3. 发明授权

US08169082B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08169082B2
公开(公告)日：2012-05-01
申请号：US13287188
申请日：2011-11-02
申请人： Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
发明人： Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号： H01L23/48
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

4. 发明申请

US20100148341A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100148341A1
公开(公告)日：2010-06-17
申请号：US12654087
申请日：2009-12-10
申请人： Tetsuo Fuji , Akitoshi Yamanaka , Hisanori Yokura
发明人： Tetsuo Fuji , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号： H01L25/065 , H01L23/48 , H01L23/522 , H01L21/60 , H01L21/768 , H01L21/822
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
摘要翻译：半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。盖包括在盖的第二面上的第一布线层。第一布线层跨越周边元件。传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。传感器侧连接部分接合到盖侧连接部分。传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。

5. 发明授权

US08497557B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08497557B2
公开(公告)日：2013-07-30
申请号：US12754036
申请日：2010-04-05
申请人： Masaya Tanaka , Tetsuo Fujii , Hisanori Yokura
发明人： Masaya Tanaka , Tetsuo Fujii , Hisanori Yokura
IPC分类号： H01L29/84
CPC分类号： B81B7/0041 , B81C2203/019 , H01L23/3121 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.
摘要翻译：半导体器件包括第一半导体衬底，第二半导体衬底和密封构件。第一半导体衬底具有表面并且在表面侧包括感测部分。感测部分具有可移动部分。将第一半导体衬底和第二半导体衬底接合在一起以形成堆叠衬底。堆叠的衬底限定用于在第一和第二半导体衬底之间容纳感测部分的气密密封空间。堆叠的衬底还限定了在第一半导体衬底和第二半导体衬底之间延伸的凹部，以穿透第一半导体衬底和第二半导体衬底之间的界面。密封件位于凹槽中。

6. 发明授权

US08106471B2 Semiconductor dynamic quantity sensor and method of producing the same 有权
标题翻译：半导体动态量传感器及其制造方法
公开(公告)号：US08106471B2
公开(公告)日：2012-01-31
申请号：US12588421
申请日：2009-10-15
申请人： Hisanori Yokura , Tetsuo Fujii
发明人： Hisanori Yokura , Tetsuo Fujii
IPC分类号： H01L29/788
CPC分类号： G01P15/125 , G01P1/023 , G01P15/0802 , G01P15/18 , G01P2015/082 , G01P2015/0831
摘要： A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.
摘要翻译：半导体动态量传感器包括与传感器部连接的传感器部和盖。基于在传感器部件的可动电极和固定电极之间限定的电容器的电容来检测动态量。传感器部分的浮动部分与传感器部件的支撑板分离以限定预定间隔。盖和支撑板中的至少一个具有移位部分，以使浮子部分沿垂直于支撑板的方向移动，从而改变预定间隔。可移动电极具有根据移位的浮子部分的位移。

7. 发明申请

US20100307246A1 Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
标题翻译：半导体动态量传感器及其制造方法
公开(公告)号：US20100307246A1
公开(公告)日：2010-12-09
申请号：US12801405
申请日：2010-06-08
申请人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
发明人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
IPC分类号： G01P15/00 , H01L21/02 , H01L29/84
CPC分类号： H01L27/1203 , B81B2201/025 , B81B2201/0257 , B81B2201/0285 , B81B2201/047 , B81C1/00182 , G01C19/5755 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/84
摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.
摘要翻译：半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。主表面具有横截面为梯形或三角形的突起。半导体层由通孔分割成可动部。突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。突起的尖端的宽度小于基板的平面方向上的可动部的宽度。突起的尖端和可动部之间的距离等于绝缘层的厚度。

8. 发明授权

US07821085B2 Physical quantity sensor and method for manufacturing the same 有权
标题翻译：物理量传感器及其制造方法
公开(公告)号：US07821085B2
公开(公告)日：2010-10-26
申请号：US12385848
申请日：2009-04-21
申请人： Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
发明人： Shigenori Suzuki , Hisanori Yokura , Kenichi Yokoyama , Tetsuo Fujii , Kazuhiko Sugiura
IPC分类号： H01L27/14 , H01L29/82 , H01L29/84
CPC分类号： B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81C2203/0118 , G01C19/56 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.
摘要翻译：物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。

9. 发明申请

US20100155865A1 Semiconductor device and method of making the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100155865A1
公开(公告)日：2010-06-24
申请号：US12654002
申请日：2009-12-08
申请人： Kazuhiko Sugiura , Tetsuo Fujii , Hisanori Yokura
发明人： Kazuhiko Sugiura , Tetsuo Fujii , Hisanori Yokura
IPC分类号： H01L29/84 , H01L21/78
CPC分类号： B81C1/00134 , B81B2207/095 , B81C1/00269 , B81C1/00301 , H01L2224/48463 , H01L2924/14 , H01L2924/19041 , H01L2924/30105
摘要： A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.
摘要翻译：半导体器件包括传感器部分，帽部分和离子注入层。传感器部分在表面的表面部分具有传感器结构。盖部具有彼此相对的第一和第二表面，并且包括通孔。传感器部分的表面与盖部分的第一表面接合，使得传感器结构被密封在传感器部分和盖部分之间。离子注入层位于帽部的第二表面上。通孔从第一表面延伸到第二表面，并通过离子注入层暴露。

10. 发明授权

US08413507B2 Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
标题翻译：半导体动态量传感器及其制造方法
公开(公告)号：US08413507B2
公开(公告)日：2013-04-09
申请号：US12801405
申请日：2010-06-08
申请人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
发明人： Tetsuo Fujii , Hisanori Yokura , Hirofumi Higuchi
IPC分类号： G01C19/56 , G01P15/125
CPC分类号： H01L27/1203 , B81B2201/025 , B81B2201/0257 , B81B2201/0285 , B81B2201/047 , B81C1/00182 , G01C19/5755 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/84
摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.
摘要翻译：半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。主表面具有横截面为梯形或三角形的突起。半导体层由通孔分割成可动部。突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。突起的尖端的宽度小于基板的平面方向上的可动部的宽度。突起的尖端和可动部之间的距离等于绝缘层的厚度。

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