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1. 发明申请

US20100148341A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100148341A1
公开(公告)日：2010-06-17
申请号：US12654087
申请日：2009-12-10
申请人： Tetsuo Fuji , Akitoshi Yamanaka , Hisanori Yokura
发明人： Tetsuo Fuji , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号： H01L25/065 , H01L23/48 , H01L23/522 , H01L21/60 , H01L21/768 , H01L21/822
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
摘要翻译：半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。盖包括在盖的第二面上的第一布线层。第一布线层跨越周边元件。传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。传感器侧连接部分接合到盖侧连接部分。传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。

2. 发明申请

US20080202249A1 Semiconductor sensor and method of manufacturing the same 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：US20080202249A1
公开(公告)日：2008-08-28
申请号：US12010758
申请日：2008-01-29
申请人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
发明人： Hisanori Yokura , Yoshihiko Isobe , Eishi Kawasaki
IPC分类号： G01L9/04 , H01C17/28
CPC分类号： G01L9/0055 , G01K5/52 , G01L1/2293 , H01L2224/02166 , Y10T29/49103
摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.
摘要翻译：一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。半导体传感器包括测量部分和第一和第二接合焊盘。仪表部分被配置为根据隔膜的变形而变形。第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。测量部分形成为绝缘体上硅衬底的半导体层。通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。

3. 发明授权

US07157781B2 Enhancement of membrane characteristics in semiconductor device with membrane 有权
标题翻译：用膜增强半导体器件膜特性
公开(公告)号：US07157781B2
公开(公告)日：2007-01-02
申请号：US10425663
申请日：2003-04-30
申请人： Eishi Kawasaki , Hisanori Yokura , Kazuhiko Sugiura
发明人： Eishi Kawasaki , Hisanori Yokura , Kazuhiko Sugiura
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81C1/00047 , B81B2201/0264 , B81B2203/0127 , B81C2203/0145 , B81C2203/019 , G01L9/0042 , G01P15/0802 , G01P15/125
摘要： A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.
摘要翻译：具有膜的半导体器件包括具有活性表面的半导体衬底和膜。空腔位于活性表面和膜之间并进行密封。膜包括具有延伸穿过第一膜的通孔的第一膜和通过回流由加热时粘稠并回流的材料制成的回流层而形成的第二膜。通孔已被第二个胶片堵住。

4. 发明申请

US20050161605A1 Infrared gas sensor 审中-公开
标题翻译：红外气体传感器
公开(公告)号：US20050161605A1
公开(公告)日：2005-07-28
申请号：US11019261
申请日：2004-12-23
申请人： Hisanori Yokura , Yasutoshi Suzuki , Takahiko Yoshida
发明人： Hisanori Yokura , Yasutoshi Suzuki , Takahiko Yoshida
IPC分类号： G01J1/02 , G01N21/03 , G01N21/35 , G01N21/3504 , H01L27/14 , H01L27/144
CPC分类号： G01N21/3504 , G01N21/0303
摘要： An infrared gas sensor includes: an infrared light source having a resistor for emitting an infrared light by heating the resistor; an infrared light sensor having a detection device for generating an electric signal in accordance with a temperature change of the detection device corresponding to the infrared light in a case where the sensor receives the infrared light; a reflection member for reflecting the infrared light emitted from the light source to introduce the infrared light to the sensor; a casing for accommodating the light source, the light sensor, and the reflection member; and a substrate. The reflection member faces the light source. The resistor and the detection device are disposed on the substrate.
摘要翻译：红外线气体传感器包括：红外光源，具有通过加热电阻器来发射红外光的电阻器; 红外光传感器，具有检测装置，用于在传感器接收到红外光的情况下，根据与红外光对应的检测装置的温度变化产生电信号; 用于反射从光源发射的红外光以将红外光引入传感器的反射构件; 用于容纳光源的壳体，光传感器和反射构件; 和基材。反射构件面向光源。电阻器和检测装置设置在基板上。

5. 发明申请

US20050099251A1 Circuit for detecting capacitance change in variable capacitance 有权
标题翻译：用于检测可变电容中电容变化的电路
公开(公告)号：US20050099251A1
公开(公告)日：2005-05-12
申请号：US10940014
申请日：2004-09-14
申请人： Toshikazu Itakura , Hisanori Yokura
发明人： Toshikazu Itakura , Hisanori Yokura
IPC分类号： G01L9/00 , G01P15/125 , G01R27/26 , H01H75/00
CPC分类号： G01R27/2605 , G01P15/125
摘要： A capacitance of a capacitor member, which varies according to a dynamic force such as an acceleration force imposed on the capacitor member, is detected by a detecting circuit. The detecting circuit is composed of an operational amplifier and a switched capacitor circuit connected in parallel to each other. A reset time (t), during which a feedback capacitor in the switched capacitor circuit is discharged, is set to satisfy the following formula: t>(ΔC+m)/n, where ΔC is an initial capacitance of the capacitor member, and n and m are constant factors having values in certain ranges. By setting the reset time (t) according to the above formula, an amount of acceleration imposed on the capacitor member is accurately detected even when the capacitor member has a certain level of the initial capacitance.
摘要翻译：通过检测电路检测电容器部件的电容，其根据施加在电容器部件上的加速力等动力而变化。检测电路由并联连接的运算放大器和开关电容电路构成。将开关电容电路中的反馈电容器放电的复位时间（t）设定为满足以下公式：t>（DeltaC + m）/ n，其中DeltaC是电容器部件的初始电容， n和m是在一定范围内具有值的常数因子。通过根据上述公式设定复位时间（t），即使电容器部件具有初始电容的一定水平，也能够精确地检测施加在电容器部件上的加速度。

6. 发明申请

US20120306490A1 MAGNETIC SENSOR AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US20120306490A1
公开(公告)日：2012-12-06
申请号：US13477208
申请日：2012-05-22
申请人： Takamoto FURUICHI , Hisanori YOKURA , Toshifumi YANO
发明人： Takamoto FURUICHI , Hisanori YOKURA , Toshifumi YANO
IPC分类号： G01R33/09 , H01F7/06
CPC分类号： G01R33/093 , G01R33/098 , H01L27/22 , H01L43/08 , H01L43/12 , Y10T29/4902
摘要： A manufacturing method of a magnetic sensor, detecting a physical amount based on a resistance change in each MRE while applying an external magnetic field to MREs, includes: preparing a substrate; forming MREs, including a free magnetic layer having a changeable magnetization direction and a pin magnetic layer having a fixed magnetization direction, above the substrate; forming heaters corresponding to MREs; arranging the substrate in the external magnetic field having a magnetic field direction in a first direction parallel to the substrate; and heating with one portion of the heater portions and magnetizing one portion of the pin magnetic layers in the first direction; and arranging the substrate in another external magnetic field having another magnetic field direction in a second direction different from the first direction; and heating with another portion of the heater portions and magnetizing another portion of the pin magnetic layers in the second direction.
摘要翻译：一种磁传感器的制造方法，其特征在于，在向MRE施加外部磁场的同时，基于每个MRE中的电阻变化来检测物理量，包括：准备基板; 在基板上形成包括具有可变磁化方向的自由磁性层和具有固定的磁化方向的销磁性层的MRE; 形成对应于MRE的加热器; 在与所述基板平行的第一方向上具有磁场方向的外部磁场中配置所述基板; 并加热一部分加热器部分，并在第一方向上磁化一部分销钉磁性层; 以及将所述基板设置在与所述第一方向不同的第二方向上的具有另一磁场方向的另一外部磁场中; 并且与另一部分加热器部分进行加热，并在第二方向上磁化另一部分销钉磁性层。

7. 发明申请

US20120049381A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120049381A1
公开(公告)日：2012-03-01
申请号：US13287188
申请日：2011-11-02
申请人： Tetsuo FUJII , Akitoshi Yamanaka , Hisanori Yokura
发明人： Tetsuo FUJII , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
摘要翻译：半导体器件包括：传感器，包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖，其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。盖包括在盖的第二面上的第一布线层。第一布线层跨越周边元件。传感器还包括传感器侧连接部分，盖子还包括帽侧连接部分。传感器侧连接部分接合到盖侧连接部分。传感器侧连接部和盖侧连接部中的至少一方提供共晶合金，使得传感器侧连接部和盖侧连接部彼此接合。

8. 发明授权

US07387024B2 Capacitive type humidity sensor 失效
标题翻译：电容式湿度传感器
公开(公告)号：US07387024B2
公开(公告)日：2008-06-17
申请号：US11061448
申请日：2005-02-22
申请人： Toshikazu Itakura , Hisanori Yokura
发明人： Toshikazu Itakura , Hisanori Yokura
IPC分类号： G01N27/22 , G01R27/26
CPC分类号： G01N27/223
摘要： A capacitive type humidity sensor includes: a semiconductor substrate; a plurality of humidity devices having a capacitance variable in accordance with a humidity; a standard capacitance device having a standard capacitance, a capacitance change of which in accordance with the humidity is smaller than that of the capacitance of each humidity device; and a CV converter circuit for converting a capacitance difference between the capacitance of each humidity device and the standard capacitance of the standard capacitance device to a signal voltage. The humidity devices, the standard capacitance device and the CV converter circuit are disposed on one side of the substrate.
摘要翻译：电容式湿度传感器包括：半导体衬底; 多个湿度装置，其具有根据湿度可变的电容; 具有标准电容的标准电容器件，根据湿度的电容变化小于每个湿度器件的电容的电容值; 以及用于将每个湿度装置的电容和标准电容装置的标准电容之间的电容差转换为信号电压的CV转换器电路。湿度装置，标准电容装置和CV转换器电路设置在基板的一侧。

9. 发明授权

US07154094B2 Fabri-Perot filter 有权
标题翻译： Fabri-Perot过滤器
公开(公告)号：US07154094B2
公开(公告)日：2006-12-26
申请号：US11007277
申请日：2004-12-09
申请人： Hisanori Yokura , Takahiko Yoshida
发明人： Hisanori Yokura , Takahiko Yoshida
IPC分类号： G01J5/02
CPC分类号： G01J3/26 , G02B26/001
摘要： A Fabri-Perot filter includes: a substrate; a first mirror disposed on the substrate; and a movable mirror unit facing the first mirror with a gap therebetween. The movable mirror unit is movable toward the first mirror in a case where a predetermined voltage is applied between the first mirror and the movable mirror unit so that the gap is changeable. The filter is capable of transmitting an infrared light having a predetermined wavelength corresponding to the gap. The movable mirror unit includes a center portion and a periphery portion, which is deformable easier than the center portion.
摘要翻译： Fabri-Perot过滤器包括：基底; 设置在基板上的第一反射镜; 以及面对第一反射镜的可移动镜单元，其间具有间隙。在第一反射镜和可动反射镜单元之间施加预定电压使得间隙可变的情况下，可动镜单元可朝向第一反射镜移动。滤光器能够传输具有与间隙对应的预定波长的红外光。可动镜单元包括中心部分和周边部分，其比中心部分易变形。

10. 发明授权

US08497557B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08497557B2
公开(公告)日：2013-07-30
申请号：US12754036
申请日：2010-04-05
申请人： Masaya Tanaka , Tetsuo Fujii , Hisanori Yokura
发明人： Masaya Tanaka , Tetsuo Fujii , Hisanori Yokura
IPC分类号： H01L29/84
CPC分类号： B81B7/0041 , B81C2203/019 , H01L23/3121 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.
摘要翻译：半导体器件包括第一半导体衬底，第二半导体衬底和密封构件。第一半导体衬底具有表面并且在表面侧包括感测部分。感测部分具有可移动部分。将第一半导体衬底和第二半导体衬底接合在一起以形成堆叠衬底。堆叠的衬底限定用于在第一和第二半导体衬底之间容纳感测部分的气密密封空间。堆叠的衬底还限定了在第一半导体衬底和第二半导体衬底之间延伸的凹部，以穿透第一半导体衬底和第二半导体衬底之间的界面。密封件位于凹槽中。

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