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1. 发明授权

US5112771A Method of fibricating a semiconductor device having a trench 失效
标题翻译：具有TRENCH的半导体器件的制备方法
公开(公告)号：US5112771A
公开(公告)日：1992-05-12
申请号：US349737
申请日：1989-06-12
申请人： Tatsuya Ishii , Yoji Mashiko , Masao Nagatomo , Michihiro Yamada
发明人： Tatsuya Ishii , Yoji Mashiko , Masao Nagatomo , Michihiro Yamada
IPC分类号： H01L21/308 , H01L21/763 , H01L27/108 , H01L29/94 , H01L21/76
CPC分类号： H01L27/10829 , H01L21/3081 , H01L21/3086 , H01L21/763 , H01L29/945
摘要： A semiconductor device having a trench (30) comprises a semiconductor substrate (11), a plurality of elements (13) provided on the semiconductor substrate, a trench (30) provided between the elements and an insulating material (12) embedded in the trench for isolating the elements. The trench has its bottom portion region enlarged in both sides.The semiconductor device is manufactured by enlarging the bottom portion region of the trench by etching.
摘要翻译：具有沟槽（30）的半导体器件包括半导体衬底（11），设置在半导体衬底上的多个元件（13），设置在元件之间的沟槽（30）和嵌入沟槽中的绝缘材料（12）用于隔离元件。沟槽的底部区域在两侧均扩大。通过蚀刻扩大沟槽的底部区域来制造半导体器件。

2. 发明授权

US06545470B2 Scanning probe microscope 失效
标题翻译：扫描探针显微镜
公开(公告)号：US06545470B2
公开(公告)日：2003-04-08
申请号：US10109659
申请日：2002-04-01
申请人： Yukari Imai , Hitoshi Maeda , Mari Tsugami , Yoji Mashiko
发明人： Yukari Imai , Hitoshi Maeda , Mari Tsugami , Yoji Mashiko
IPC分类号： G01R3302
CPC分类号： G01Q70/14 , Y10S977/875
摘要： It is an object to obtain a scanning probe microscope capable of effectively suppressing a reduction in precision in a measurement. A conductive probe (2C) has such a pyramid structure as to be expanded from a tip portion to a bottom surface (a surface on which a cantilever (1) is to be formed) and a semiconductor integrated circuit (12) is formed in a side surface of the conductive probe (2C). An amplifying circuit (12a) to be the semiconductor integrated circuit (12) amplifies an electrical characteristic signal given from the conductive probe (2C) to send the electrical characteristic signal to a signal processor (10) through a conductive cantilever (1C) and a signal cable (9).
摘要翻译：本发明的目的是获得能够有效地抑制测量精度降低的扫描探针显微镜。导电探针（2C）具有从尖端部扩大到底面（要形成悬臂（1）的面）的金字塔结构，在半导体集成电路（12）中形成有半导体集成电路导电探针（2C）的侧表面。作为半导体集成电路（12）的放大电路（12a）放大从导电探针（2C）给出的电特性信号，通过导电悬臂（1C）将电特性信号发送到信号处理器（10）信号电缆（9）。

3. 发明授权

US4723062A Aluminum circuit to be disconnected and method of cutting the same 失效
标题翻译：铝电路要断线，切割方法一样
公开(公告)号：US4723062A
公开(公告)日：1988-02-02
申请号：US061436
申请日：1987-06-15
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L23/52 , C23C16/56 , C23F4/00 , H01L21/3205 , H05K1/09 , H05K3/02 , H05K3/08 , H05K3/22 , B23K26/00
CPC分类号： C23C16/56 , C23F4/00 , H05K3/08 , H05K3/225 , H05K1/09 , H05K2203/107 , H05K2203/1142 , H05K2203/175 , H05K3/027 , Y10T29/49156
摘要： In order to cut a portion of an aluminum interconnection in an aluminum circuit to be disconnected, the aluminum interconnection portion in the region to be cut is covered with a hydrogen-containing silicon nitride film by plasma CVD and is then irradiated with laser beams in an operating sequence consisting of three steps: the first step with relatively low power intensity and long irradiation time duration, the second step with intermediate power intensity and short irradiation time duration and the third step with relatively high power intensity and shortest irradiation time duration.
摘要翻译：为了将要断开的铝电路中的铝互连部分切割掉，待切割区域中的铝互连部分通过等离子体CVD被含氢氮化硅膜覆盖，然后用激光束操作顺序由三个步骤组成：第一步功率相对较低，照射持续时间长，第二步具有中等功率强度和较短的照射时间，第三步具有较高的功率强度和最短的照射时间。

4. 发明授权

US4843238A Method for identifying a blistered film in layered films 失效
标题翻译：用于识别层状膜中起泡膜的方法
公开(公告)号：US4843238A
公开(公告)日：1989-06-27
申请号：US155101
申请日：1988-02-11
申请人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
发明人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
IPC分类号： H01L21/66 , G01N23/225 , G01Q60/00 , H01J37/28
CPC分类号： G01N23/2255
摘要： In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.
摘要翻译：在层状膜中识别起泡膜的方法中，聚焦离子束照射泡囊的大致中心和没有起泡的部分，并且与由照射产生的二次电子的相应数量有关的各组测量数据是相比之下确定哪一层分层膜已经起泡。由于采用聚焦离子束，因此本方法适用于分层膜中小泡的检测。此外，由于消除了现有技术中可能需要的大量切割操作，因此可以稳定，积极和经济地执行本方法。

5. 发明授权

US4636400A Method of treating silicon nitride film formed by plasma deposition 失效
标题翻译：通过等离子体沉积形成的氮化硅膜的处理方法
公开(公告)号：US4636400A
公开(公告)日：1987-01-13
申请号：US773918
申请日：1985-09-09
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L21/318 , C23C16/34 , C23C16/56 , H01L21/263 , B05D3/06
CPC分类号： C23C16/56 , C23C16/345
摘要： A method of treating a silicon nitride film formed by plasma deposition and deposited on a substrate, which comprises: (1) irradiating the silicon nitride film, and (2) heating the silicon nitride film during the irradiating.
摘要翻译：一种处理通过等离子体沉积形成并沉积在衬底上的氮化硅膜的方法，包括：（1）照射氮化硅膜，和（2）在照射期间加热氮化硅膜。

6. 发明授权

US5162233A Method of detecting and analyzing impurities 失效
标题翻译：检测和分析杂质的方法
公开(公告)号：US5162233A
公开(公告)日：1992-11-10
申请号：US153921
申请日：1988-02-09
申请人： Junko Komori , Yoji Mashiko
发明人： Junko Komori , Yoji Mashiko
IPC分类号： G01N1/34 , G01N1/28 , G01N1/40
CPC分类号： G01N1/2813 , G01N1/40 , Y10T436/25125
摘要： A method of detecting and analyzing impurities wherein a substrate is cleaned by heating it under vacuum, a liquid sample is dropped on a surface of the substrate under vacuum which vacuum is less than that of the previous step, the liquid sample which has thus been dropped on the substrate is dried by reducing the pressure of the atmosphere surrounding the substrate, and impurities contained in the liquid sample are detected and analyzed by examining the surface of the substrate. Thus, this method is adapted to minimize the risk of any foreign matter becoming mixed with the sample liquid, to thus ensure a high level of precision in the detection and analysis of impurities.
摘要翻译：一种检测和分析杂质的方法，其中通过在真空下加热衬底来清洁衬底，液体样品在真空下真空滴落在真空下，真空小于上一步骤的液体样品，由此滴下的液体样品通过降低衬底周围的气氛的压力来干燥衬底，通过检查衬底的表面来检测和分析包含在液体样品中的杂质。因此，该方法适于使得异物与样品液体混合的风险最小化，从而确保杂质的检测和分析中的高水平精度。

7. 发明授权

US4990489A Read only memory device including a superconductive electrode 失效
标题翻译：只读存储器件包括超导电极
公开(公告)号：US4990489A
公开(公告)日：1991-02-05
申请号：US215802
申请日：1988-07-06
申请人： Yoji Mashiko , Tadashi Nishioka
发明人： Yoji Mashiko , Tadashi Nishioka
IPC分类号： H01L23/522 , G11C7/00 , G11C17/00 , G11C17/12 , H01L21/28 , H01L21/768 , H01L21/82 , H01L21/8246 , H01L23/525 , H01L23/532 , H01L27/112 , H01L29/43 , H01L39/00 , H01L39/06 , H01L39/24
CPC分类号： H01L23/53285 , G11C17/00 , G11C17/12 , G11C7/005 , H01L21/76891 , H01L23/5258 , H01L2924/0002 , Y10S148/046 , Y10S505/70 , Y10S505/703 , Y10S505/706 , Y10S505/831 , Y10S505/841 , Y10S505/923
摘要： A read only memory device includes a first electrode and a second electrode arranged in an overlapping relation with the first electrode so as to be geometrically in connection at an intersection therewith corresponding to a storage location for one type of data. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed one of the two electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at an intersection corresponding to a storage location for another type of stored data. The high resistance region is formed by irradiating an intersection with a focused ion beam.
摘要翻译：只读存储器件包括第一电极和第二电极，该第一电极和第二电极以与第一电极重叠的关系布置，以便在与其对应于一种类型的数据的存储位置的交叉点几何地连接。第一和第二电极中的至少一个由陶瓷系统的高温超导体形成。由高温超导体形成的两个电极中规定的一个电极具有高电阻区域，用于在对应于另一类型的存储数据的存储位置的交叉点处彼此绝缘第一和第二电极。通过照射与聚焦离子束的交点来形成高电阻区域。

8. 发明授权

US4414242A Process for fabricating a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US4414242A
公开(公告)日：1983-11-08
申请号：US444095
申请日：1982-11-24
申请人： Tadashi Nishimura , Yoji Mashiko
发明人： Tadashi Nishimura , Yoji Mashiko
IPC分类号： H01L27/12 , H01L21/02 , H01L21/20 , H01L21/263 , H01L21/268 , H01L21/336 , H01L21/762 , H01L21/86 , H01L29/786 , B05D3/06
CPC分类号： H01L21/86 , H01L21/2026 , H01L21/2636 , H01L21/268 , H01L21/76264 , H01L21/76272 , H01L21/76281 , Y10S117/904 , Y10S148/091 , Y10S148/093
摘要： A process for producing a semiconductor device includes the step of locally heating and fusing an island of a polycrystalline or amorphous semiconductor layer which is formed on and surrounded by an insulator. In the process, at least one ridge is formed on the underlying insulator before the formation of the semiconductor layer.
摘要翻译：制造半导体器件的方法包括：局部加热和熔融形成在绝缘体上并被绝缘体包围的多晶或非晶半导体层的岛。在该过程中，在形成半导体层之前，在下面的绝缘体上形成至少一个脊。

9. 发明授权

US4377734A Method for forming patterns by plasma etching 失效
标题翻译：通过等离子体蚀刻形成图案的方法
公开(公告)号：US4377734A
公开(公告)日：1983-03-22
申请号：US195380
申请日：1980-10-09
申请人： Yoji Mashiko , Hirozo Takano , Haruhiko Abe , Sotoju Asai , Kazuo Mizuguchi , Sumio Nomoto
发明人： Yoji Mashiko , Hirozo Takano , Haruhiko Abe , Sotoju Asai , Kazuo Mizuguchi , Sumio Nomoto
IPC分类号： H01L21/302 , H01L21/311 , H01L21/3115 , H01L21/3213 , H01L21/3215 , B23K9/00
CPC分类号： H01L21/3215 , H01L21/302 , H01L21/31116 , H01L21/31144 , H01L21/31155 , H01L21/32136 , H01L21/32137
摘要： Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.
摘要翻译：在等离子体蚀刻的氧气存在下变为无源的金属的离子注入到工件的表面的选定部分中，之后用与氧混合的反应气体进行等离子体蚀刻，由此将该层已被赋予被动作为掩模，并且形成蚀刻图案。

10. 发明授权

US5130273A Method for manufacturing a read only memory device using a focused ion beam to alter superconductivity 失效
标题翻译：使用聚焦离子束制造只读存储器件以提高超导性的方法
公开(公告)号：US5130273A
公开(公告)日：1992-07-14
申请号：US642246
申请日：1991-01-07
申请人： Yoji Mashiko , Tadashi Nishioka
发明人： Yoji Mashiko , Tadashi Nishioka
IPC分类号： H01L23/522 , G11C7/00 , G11C17/00 , G11C17/12 , H01L21/28 , H01L21/768 , H01L21/82 , H01L21/8246 , H01L23/525 , H01L23/532 , H01L27/112 , H01L29/43 , H01L39/00 , H01L39/06 , H01L39/24
CPC分类号： H01L23/53285 , G11C17/00 , G11C17/12 , G11C7/005 , H01L21/76891 , H01L23/5258 , H01L2924/0002 , Y10S148/046 , Y10S505/70 , Y10S505/703 , Y10S505/706 , Y10S505/831 , Y10S505/841 , Y10S505/923
摘要： A read only memory device comprises a first electrode, and a second electrode arranged overlapping with the first electrode so as to be geometrically in connection at the intersection. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed electrode out of said electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at the intersection corresponding to a prescribed stored data.In the manufacturing method, the first and second electrodes are formed and, thereafter, a high resistance region is formed by irradiating focused ion beam.

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