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    • 9. 发明申请
    • MICRO-SAMPLE PROCESSING METHOD, OBSERVATION METHOD AND APPARATUS
    • 微量样品处理方法,观察方法和装置
    • US20110073758A1
    • 2011-03-31
    • US12963201
    • 2010-12-08
    • Tsuyoshi OHNISHI
    • Tsuyoshi OHNISHI
    • G01N23/04
    • H01J37/26G01N23/2255H01J37/244H01J37/3056H01J2237/30466H01J2237/30472
    • As sample sizes have decreased to microscopic levels, it has become desirable to establish a method for thin film processing and observation with a high level of positional accuracy, especially for materials which are vulnerable to electron beam irradiation. The technological problem is to judge a point at which to end FIB processing and perform control so that the portion to be observed ends up in a central portion of the thin film. The present invention enables display of structure in cross-section by setting a strip-like processing region in an inclined portion of a sample cross-section and enlarging the display of the strip-like processing region on a processing monitor in a short-side direction. It is then possible to check the cross-sectional structure without additional use of an electron beam. Since it is possible to check the processed section without using an electron beam, electron beam-generated damage or deformation to the processed section is avoided. Further, performing the observation using a high-speed electron beam after forming the thin film enables observation with suppressed sample damage. Processing of even thinner thin films using the FIB while observing images of the sample generated using an electron beam is then possible.
    • 由于样品尺寸已经降低到微观水平,因此希望以高水平的位置精度建立薄膜加工和观察方法,特别是对于易受电子束照射的材料而言。 技术问题是判断结束FIB处理的一个点并进行控制,使得待观察的部分最终在薄膜的中心部分。 本发明能够通过在样本横截面的倾斜部分中设置条状处理区域并且在短边方向上在处理监视器上放大带状处理区域的显示来显示横截面结构 。 然后可以检查横截面结构,而不需要额外使用电子束。 由于可以在不使用电子束的情况下检查处理部分,因此避免了对处理部分的电子束产生的损伤或变形。 此外,在形成薄膜之后使用高速电子束进行观察使得能够以抑制的样品损伤进行观察。 然后可以使用FIB处理甚至更薄的薄膜,同时观察使用电子束产生的样品的图像。