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1. 发明授权

US06300840B1 Microwave/millimeter-wave integrated circuit 失效
标题翻译：微波/毫米波集成电路
公开(公告)号：US06300840B1
公开(公告)日：2001-10-09
申请号：US09457679
申请日：1999-12-09
申请人： Takuo Kashiwa , Yoshinobu Sasaki , Naoki Tanahashi
发明人： Takuo Kashiwa , Yoshinobu Sasaki , Naoki Tanahashi
IPC分类号： H03L100
CPC分类号： H03B5/04
摘要： A microwave/millimeter-wave integrated circuit (IC) realizes stable oscillation by reducing time-based variation of a load impedance. This IC connects an oscillator to an input terminal of a Lange coupler and connects to the isolation port of the Lange coupler a terminating resistor having a resistance equal to the load impedance connected to the output terminals of the Lange coupler. This connection stabilizes load impedance to the oscillator, and reduces variation in the oscillation frequency as a result of changes in load impedance.
摘要翻译：微波/毫米波集成电路（IC）通过减少负载阻抗的基于时间的变化实现稳定的振荡。该IC将振荡器连接到Lange耦合器的输入端子，并连接到Lange耦合器的隔离端口，其端接电阻器具有等于连接到Lange耦合器的输出端子的负载阻抗的电阻。这种连接稳定了振荡器的负载阻抗，并且由于负载阻抗的变化而降低了振荡频率的变化。

2. 发明授权

US07221311B2 Radar 有权
标题翻译：雷达
公开(公告)号：US07221311B2
公开(公告)日：2007-05-22
申请号：US11137330
申请日：2005-05-26
申请人： Takuo Kashiwa , Takayoshi Hirose , Akio Funae
发明人： Takuo Kashiwa , Takayoshi Hirose , Akio Funae
IPC分类号： G01S7/28
CPC分类号： G01S7/285 , G01S7/038
摘要： A radar includes a transmitter circuit, a receiver circuit, an antenna and a circulator. The receiver circuit includes a low-noise amplifier which amplifies a received signal fed from the antenna through the circulator. A local oscillator provided in the receiver circuit generates a local oscillator signal of which frequency is approximately half the frequency of the received signal, and the local oscillator signal is amplified by a buffer amplifier. An even harmonic mixer including an anti-parallel diode pair also provided in the receiver circuit as a frequency converter mixes the received signal output from the low-noise amplifier with the local oscillator signal output from the buffer amplifier to generate and output an intermediate frequency signal.
摘要翻译：雷达包括发射机电路，接收机电路，天线和循环器。接收器电路包括一个低噪声放大器，其通过循环器放大从天线馈送的接收信号。提供在接收器电路中的本地振荡器产生频率约为接收信号频率的一半的本地振荡器信号，并且本地振荡器信号由缓冲放大器放大。包括反并联二极管对的并联二极管对的并联二极管对也设置在接收机电路中作为频率转换器将从低噪声放大器输出的接收信号与从缓冲放大器输出的本地振荡器信号混合，以产生和输出中频信号。

3. 发明申请

US20070262816A1 Distortion Compensation Circuit 失效
标题翻译：失真补偿电路
公开(公告)号：US20070262816A1
公开(公告)日：2007-11-15
申请号：US11663267
申请日：2005-06-28
申请人： Takuo Kashiwa , Yoshifumi Ohnishi
发明人： Takuo Kashiwa , Yoshifumi Ohnishi
IPC分类号： H03G3/20
CPC分类号： H03F1/3205 , H03F1/3276 , H03F3/191
摘要： There is provided a distortion compensation circuit that can compensate for the nonlinearity of an amplifier having the characteristic that the gain is reduced and the phase is delayed with an increase in input power. An inductor 112 is connected in series with a diode 105 of a distortion compensation circuit 100. The resistance components of the diode 105 decrease with an increase in input power, so that the effect of the impedance of the inductor 112 connected in series with the diode 105 appears, and the impedance of the distortion compensation circuit 100 becomes inductive, producing the characteristic that the phase is advanced. At the same time, the resistance components of the diode 105 decrease with an increase in input power, thus producing the characteristic that the loss is reduced and the gain is increased.
摘要翻译：提供了一种失真补偿电路，其可以补偿具有增益降低的特性的放大器的非线性，并且相位随输入功率的增加而延迟。电感器112与失真补偿电路100的二极管105串联连接。二极管105的电阻分量随着输入功率的增加而减小，从而出现与二极管105串联连接的电感器112的阻抗的影响，并且失真补偿电路100的阻抗变成电感，产生特性这个阶段是进步的。同时，二极管105的电阻分量随着输入功率的增加而减小，从而产生损耗减小并增加增益的特性。

4. 发明授权

US5905409A Microwave and millimeter wave circuit including amplifier and band elimination filters 失效
标题翻译：微波和毫米波电路包括放大器和带除滤波器
公开(公告)号：US5905409A
公开(公告)日：1999-05-18
申请号：US943929
申请日：1997-10-03
申请人： Shinichi Fujimoto , Takuo Kashiwa
发明人： Shinichi Fujimoto , Takuo Kashiwa
IPC分类号： H03F3/193 , H03F3/60 , H03F3/191
CPC分类号： H03F3/1935 , H03F3/601
摘要： A microwave and millimeter wave circuit includes an amplifier having an amplification center frequency, input and output terminals, and a source-grounded transistor. First and second transmission lines are connected between the input terminal and a gate of the transistor, and are connected in series to each other. Third and fourth transmission lines are connected between a drain of the transistor and the output terminal, and are connected in series to each other. A first band elimination filter is connected to the input terminal, and has a first stopping frequency, and a second band elmination filter is connected to the output terminal, and has a second stopping frequency. A third band elimination filter is connected to a connecting point between the first and second transmission lines and has a third stopping frequency, and a fourth band elimination filter is connected to a connecting point between the third and fourth transmission lines and has a fourth stopping frequency. Each of the first to fourth stopping frequencies is lower than the amplification center frequency, and each of the third and fourth stopping frequencies is higher than the first and second stopping frequencies.
摘要翻译：微波和毫米波电路包括具有放大中心频率的放大器，输入和输出端子以及源极接地晶体管。第一和第二传输线连接在晶体管的输入端和栅极之间，并且彼此串联连接。第三和第四传输线连接在晶体管的漏极和输出端之间，并且彼此串联连接。第一带除滤波器连接到输入端，并且具有第一停止频率，第二带通滤波器连接到输出端，并具有第二停止频率。第三带通滤波器连接到第一和第二传输线之间的连接点，并且具有第三停止频率，并且第四带通滤波器连接到第三和第四传输线之间的连接点，并且具有第四停止频率。第一至第四停止频率中的每一个都低于放大中心频率，并且第三和第四停止频率中的每一个都高于第一和第二停止频率。

5. 发明授权

US07598806B2 Distortion compensation circuit 失效
标题翻译：失真补偿电路
公开(公告)号：US07598806B2
公开(公告)日：2009-10-06
申请号：US11663267
申请日：2005-06-28
申请人： Takuo Kashiwa , Yoshifumi Ohnishi
发明人： Takuo Kashiwa , Yoshifumi Ohnishi
IPC分类号： H03F1/26
CPC分类号： H03F1/3205 , H03F1/3276 , H03F3/191
摘要： There is provided a distortion compensation circuit that can compensate for the nonlinearity of an amplifier having the characteristic that the gain is reduced and the phase is delayed with an increase in input power. An inductor 112 is connected in series with a diode 105 of a distortion compensation circuit 100. The resistance components of the diode 105 decrease with an increase in input power, so that the effect of the impedance of the inductor 112 connected in series with the diode 105 appears, and the impedance of the distortion compensation circuit 100 becomes inductive, producing the characteristic that the phase is advanced. At the same time, the resistance components of the diode 105 decrease with an increase in input power, thus producing the characteristic that the loss is reduced and the gain is increased.
摘要翻译：提供了一种失真补偿电路，其可以补偿具有增益降低的特性的放大器的非线性，并且相位随输入功率的增加而延迟。电感器112与失真补偿电路100的二极管105串联连接。二极管105的电阻分量随着输入功率的增加而减小，使得与二极管串联连接的电感器112的阻抗的影响 105，并且失真补偿电路100的阻抗变为电感，产生相位提前的特性。同时，二极管105的电阻分量随着输入功率的增加而减小，从而产生损耗减小并增加增益的特性。

6. 发明申请

US20070015481A1 Signal conversion apparatus and signal conversion method 有权
标题翻译：信号转换装置及信号转换方法
公开(公告)号：US20070015481A1
公开(公告)日：2007-01-18
申请号：US11483520
申请日：2006-07-11
申请人： Takayoshi Hirose , Takuo Kashiwa
发明人： Takayoshi Hirose , Takuo Kashiwa
IPC分类号： H04B1/26 , H04B15/00
CPC分类号： H04B1/28 , H03D11/00 , H04L25/0278
摘要： A signal conversion apparatus includes a local oscillator for locally generating a signal having a frequency, a phase shifter for shifting the phase of the locally generated signal output from the local oscillator by an amount determined based on a relationship between the amount of phase shift and the amount of frequency pulling, and a converter for converting an input signal by using the phase-shifted locally generated signal output from the phase shifter. The phase shifter varies impedance between the local oscillator and the converter so that the oscillating frequency of the locally generated signal output from the local oscillator remains unchanged.
摘要翻译：一种信号转换装置，包括用于本地产生具有频率的信号的本地振荡器，用于将从本地振荡器输出的本地产生的信号的相位偏移基于相移量和频率牵引量，以及通过使用从移相器输出的相移本地产生的信号来转换输入信号的转换器。移相器在本地振荡器和转换器之间改变阻抗，使得从本地振荡器输出的本地产生的信号的振荡频率保持不变。

7. 发明申请

US20050264443A1 Radar 有权
标题翻译：雷达
公开(公告)号：US20050264443A1
公开(公告)日：2005-12-01
申请号：US11137330
申请日：2005-05-26
申请人： Takuo Kashiwa , Takayoshi Hirose , Akio Funae
发明人： Takuo Kashiwa , Takayoshi Hirose , Akio Funae
IPC分类号： G01S13/02 , G01S7/03 , G01S7/28 , G01S7/285 , G01S7/35
CPC分类号： G01S7/285 , G01S7/038
摘要： A radar includes a transmitter circuit, a receiver circuit, an antenna and a circulator. The receiver circuit includes a low-noise amplifier which amplifies a received signal fed from the antenna through the circulator. A local oscillator provided in the receiver circuit generates a local oscillator signal of which frequency is approximately half the frequency of the received signal, and the local oscillator signal is amplified by a buffer amplifier. An even harmonic mixer including an anti-parallel diode pair also provided in the receiver circuit as a frequency converter mixes the received signal output from the low-noise amplifier with the local oscillator signal output from the buffer amplifier to generate and output an intermediate frequency signal.
摘要翻译：雷达包括发射机电路，接收机电路，天线和循环器。接收器电路包括一个低噪声放大器，其通过循环器放大从天线馈送的接收信号。提供在接收器电路中的本地振荡器产生频率约为接收信号频率的一半的本地振荡器信号，并且本地振荡器信号由缓冲放大器放大。包括反并联二极管对的并联二极管对的并联二极管对也设置在接收机电路中作为频率转换器将从低噪声放大器输出的接收信号与从缓冲放大器输出的本地振荡器信号混合，以产生和输出中频信号。

8. 发明授权

US5705847A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5705847A
公开(公告)日：1998-01-06
申请号：US760721
申请日：1996-12-05
申请人： Takuo Kashiwa , Makio Komaru
发明人： Takuo Kashiwa , Makio Komaru
IPC分类号： H01L29/872 , H01L21/338 , H01L21/8232 , H01L21/8252 , H01L27/06 , H01L27/095 , H01L29/47 , H01L29/778 , H01L29/812 , H01L29/93 , H01L31/07
CPC分类号： H01L21/8252 , H01L27/0605
摘要： A semiconductor device includes a semiconductor substrate on which are successively disposed, a semiconductor laminated layer structure including at least two semiconductor layers, a first semiconductor layer containing a first dopant impurity providing a first conductivity type, and a second semiconductor layer containing the first dopant impurity in a concentration higher than in the first semiconductor layer. A semiconductor diode includes a first electrode in ohmic contact with the second semiconductor layer, and a second electrode in Schottky contact with the second semiconductor layers. A transistor includes a gate electrode in the recess and making a Schottky contact with the first semiconductor layer, and a source electrode and a drain electrode disposed on opposite sides of the recess on the second semiconductor layer, and in ohmic contact with the second semiconductor layer. The region in the diode where the depletion layer extends is broadened, and the capacitance of the diode varies linearly and is controllable over a wide range.
摘要翻译：一种半导体器件包括依次布置的半导体衬底，包括至少两个半导体层的半导体层叠层结构，包含提供第一导电类型的第一掺杂杂质的第一半导体层和包含第一掺杂杂质的第二半导体层其浓度高于第一半导体层。半导体二极管包括与第二半导体层欧姆接触的第一电极和与第二半导体层肖特基接触的第二电极。晶体管包括凹槽中的栅电极，与第一半导体层形成肖特基接触，以及设置在第二半导体层上的凹槽的相对侧上的源电极和漏电极，并与第二半导体层欧姆接触。二极管中耗尽层延伸的区域变宽，二极管的电容线性变化，并可在宽范围内控制。

9. 发明授权

US5302554A Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5302554A
公开(公告)日：1994-04-12
申请号：US928026
申请日：1992-08-11
申请人： Takuo Kashiwa , Takahide Ishikawa , Yoshihiro Notani
发明人： Takuo Kashiwa , Takahide Ishikawa , Yoshihiro Notani
IPC分类号： H01L21/301 , H01L21/304 , H01L21/302
CPC分类号： H01L21/3043 , H01L21/304 , Y10S148/028
摘要： According to a method for producing semiconductor chips, grooves serving as dicing lines are formed in a front surface of a semiconductor wafer, the semiconductor wafer is ground from the rear surface to a prescribed thickness, leaving portions of the wafer opposite the grooves, a feeding layer is formed on the ground rear surface of the wafer, a metal layer for heat radiation is formed on the feeding layer, a dicing tape is applied to the metal layer, and the wafer and the feeding layer are diced along the dicing lines, resulting in a plurality of semiconductor chips. Therefore, the strength of the wafer is increased because portions of the wafer remain at the dicing lines, preventing curvature of the wafer. When a plurality of metal layers for heat radiation are selectively formed on the feeding layer except for regions opposite the dicing lines, since only thin portions of the wafer and the feeding layer are present at the dicing lines, burrs produced during dicing are reduced and an adequate junction is achieved in a subsequent die-bonding process.
摘要翻译：根据半导体芯片的制造方法，在半导体晶片的正面形成有用作切割线的槽，将半导体晶片从后表面研磨成规定的厚度，使晶片的与槽相反的一部分，层形成在晶片的接地后表面上，在馈电层上形成用于散热的金属层，将切割带施加到金属层，并且沿着切割线切割晶片和馈电层，导致在多个半导体芯片中。因此，由于晶片的部分保留在切割线处，因此晶片的强度增加，从而防止了晶片的弯曲。当除了与切割线相对的区域之外，在供给层上选择性地形成多个用于散热的金属层时，由于在切割线处仅存在晶片和馈电层的薄部分，所以在切割期间产生的毛刺减少，并且在随后的芯片接合工艺中实现足够的连接。

10. 发明授权

US5202649A Microwave integrated circuit device having impedance matching 失效
标题翻译：具有阻抗匹配的微波集成电路器件
公开(公告)号：US5202649A
公开(公告)日：1993-04-13
申请号：US764824
申请日：1991-09-24
申请人： Takuo Kashiwa
发明人： Takuo Kashiwa
IPC分类号： H01P5/04
CPC分类号： H01P5/04
摘要： A microwave integrated circuit includes a matching circuits. The microwave integrated circuit includes a main transmission line having a strip line and a shorted stub or an open stub, all of which are arranged on a semiconductor substrate. A phase control circuit connected in parallel with the main transmission line controls the passing phase of the main transmission line. Therefore, the electrical length of the main line can be changed and the passing phase through the main line can be controlled for adjusting impedance matching in accordance with changes in the impedance of the element to be matched, resulting in precise impedance matching at a desired frequency.
摘要翻译：微波集成电路包括匹配电路。微波集成电路包括具有带状线和短路短截线或开路短截线的主传输线，所有这些线路都布置在半导体衬底上。与主传输线并联连接的相位控制电路控制主传输线的通过相位。因此，可以改变主线的电长度，并且可以控制通过主线的通过相位，以根据要匹配的元件的阻抗的变化来调整阻抗匹配，从而导致所需频率的精确阻抗匹配。

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