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1. 发明授权

US06300840B1 Microwave/millimeter-wave integrated circuit 失效
标题翻译：微波/毫米波集成电路
公开(公告)号：US06300840B1
公开(公告)日：2001-10-09
申请号：US09457679
申请日：1999-12-09
申请人： Takuo Kashiwa , Yoshinobu Sasaki , Naoki Tanahashi
发明人： Takuo Kashiwa , Yoshinobu Sasaki , Naoki Tanahashi
IPC分类号： H03L100
CPC分类号： H03B5/04
摘要： A microwave/millimeter-wave integrated circuit (IC) realizes stable oscillation by reducing time-based variation of a load impedance. This IC connects an oscillator to an input terminal of a Lange coupler and connects to the isolation port of the Lange coupler a terminating resistor having a resistance equal to the load impedance connected to the output terminals of the Lange coupler. This connection stabilizes load impedance to the oscillator, and reduces variation in the oscillation frequency as a result of changes in load impedance.
摘要翻译：微波/毫米波集成电路（IC）通过减少负载阻抗的基于时间的变化实现稳定的振荡。该IC将振荡器连接到Lange耦合器的输入端子，并连接到Lange耦合器的隔离端口，其端接电阻器具有等于连接到Lange耦合器的输出端子的负载阻抗的电阻。这种连接稳定了振荡器的负载阻抗，并且由于负载阻抗的变化而降低了振荡频率的变化。

2. 发明授权

US5039873A Microwave elements with impedance control circuits 失效
标题翻译：具有阻抗控制电路的微波元件
公开(公告)号：US5039873A
公开(公告)日：1991-08-13
申请号：US497306
申请日：1990-03-22
申请人： Yoshinobu Sasaki
发明人： Yoshinobu Sasaki
IPC分类号： H01P1/15 , H01P1/185 , H03K17/14 , H03K17/693
CPC分类号： H01P1/185 , H01P1/15 , H03K17/145 , H03K17/693
摘要： A microwave element includes an impedance control circuit for controlling the capacitance between the source and the drain of an FET in the off state including a series-connected diode and capacitor connected in parallel between the source and drain of the FET and a circuit for applying a variable bias voltage to the diode. A microwave switch including two FETs includes two impedance control circuits for controlling the capacitances of the FETs. A microwave switched line phase shifter includes two transmission lines of different electrical lengths and four FETs, two of the FETs being connected in series at each of the ends of the two transmission lines. Impedance control circuits for controlling the capacitances of each of the FETs are included. A microwave loaded-line phase shifter includes a main transmission line, two loaded lines having the same electrical length connected to the respective ends of the main line, and impedance control circuits for controlling the capacitances of FETs connected between the loaded lines and ground.

3. 发明授权

US08907454B2 Transistor with heat sink joined to only part of one electrode 有权
标题翻译：具有散热片的晶体管仅连接到一个电极的一部分
公开(公告)号：US08907454B2
公开(公告)日：2014-12-09
申请号：US13763798
申请日：2013-02-11
申请人： Yoshinobu Sasaki , Hitoshi Kurusu
发明人： Yoshinobu Sasaki , Hitoshi Kurusu
IPC分类号： H01L27/102 , H01L27/04 , H01L29/73
CPC分类号： H01L27/04 , H01L29/73
摘要： A transistor includes: a semiconductor substrate; a first electrode on the semiconductor substrate and having first and second portions; a second electrode on the semiconductor substrate and spaced apart from the first electrode; a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode; and a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode.
摘要翻译：晶体管包括：半导体衬底; 半导体衬底上的第一电极，并具有第一和第二部分; 在所述半导体衬底上并与所述第一电极间隔开的第二电极; 控制电极，位于所述第一电极和所述第二电极之间; 以及与第一电极的第二部分接合而不连接到第一电极的第一部分的第一散热板。

4. 发明授权

US08587373B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US08587373B2
公开(公告)日：2013-11-19
申请号：US13488493
申请日：2012-06-05
申请人： Yoshinobu Sasaki , Kazuya Yamamoto
发明人： Yoshinobu Sasaki , Kazuya Yamamoto
IPC分类号： H03F1/14
CPC分类号： H03F1/0277 , H03F1/565 , H03F3/191 , H03F3/211 , H03F3/72 , H03F2203/21136 , H03F2203/7233
摘要： A power amplifier includes: an input terminal at which an input signal is input; a first amplifier element amplifying the input signal; a second amplifier element amplifying an output signal of the first amplifier element; an output terminal from which an output signal of the second amplifier element is output; a matching circuit connected between an output of the second amplifier element and the output terminal; a first switch connected between an output of the first amplifier element and an input of the second amplifier element; and a second switch having a first end connected to the output of the first amplifier element, and a second end. The matching circuit includes a first inductor and a first capacitor connected in series between the output of the second amplifier element and a grounding point. The second end of the second switch is connected to a connecting point of the first inductor to the first capacitor.
摘要翻译：功率放大器包括：输入端，输入信号被输入; 放大输入信号的第一放大器元件; 放大第一放大器元件的输出信号的第二放大器元件; 输出第二放大器元件的输出信号的输出端子; 连接在第二放大器元件的输出端和输出端子之间的匹配电路; 连接在第一放大器元件的输出端和第二放大器元件的输入端之间的第一开关; 以及第二开关，其具有连接到第一放大器元件的输出的第一端和第二端。匹配电路包括串联连接在第二放大器元件的输出端和接地点之间的第一电感器和第一电容器。第二开关的第二端连接到第一电感器与第一电容器的连接点。

5. 发明授权

US6104240A Microwave circuit and method of manufacturing microwave circuit 失效
标题翻译：微波电路及微波电路制造方法
公开(公告)号：US6104240A
公开(公告)日：2000-08-15
申请号：US220448
申请日：1998-12-24
申请人： Sinichi Fujimoto , Yoshinobu Sasaki
发明人： Sinichi Fujimoto , Yoshinobu Sasaki
IPC分类号： H01P3/08 , H01P5/04 , H01P5/18 , H01P11/00 , H03F1/36 , H01P1/10 , H01P1/22
CPC分类号： H01P5/185 , H01P5/04
摘要： A microwave circuit having a coupler with two microstrip conductors on a front surface of a substrate, parallel to each other, and electromagnetically coupled to each other with a coupling coefficient wherein the substrate has a rear surface on which a grounding conductor is formed. A floating conductor is interposed between the microstrip conductors. A first terminal of a switching device is connected to one end of the floating conductor while a second terminal of the switching device is grounded. By selectively turning on and off the switching device, the coupling coefficient is changed.
摘要翻译：一种具有耦合器的微波电路，其具有在基板的前表面上的两个微带导体，彼此平行并且以耦合系数彼此电磁耦合，其中所述基板具有形成有接地导体的后表面。浮动导体介于微带导体之间。开关装置的第一端子连接到浮动导体的一端，而开关装置的第二端子接地。通过选择性地打开和关闭开关装置，耦合系数改变。

6. 发明授权

US5675290A Microwave amplifier circuit 失效
标题翻译：微波放大电路
公开(公告)号：US5675290A
公开(公告)日：1997-10-07
申请号：US630482
申请日：1996-04-10
申请人： Yoshihiro Tsukahara , Yoshinobu Sasaki
发明人： Yoshihiro Tsukahara , Yoshinobu Sasaki
IPC分类号： H03G3/02 , H03F1/30 , H03F3/193 , H03F3/60 , H03F3/16
CPC分类号： H03F1/306 , H03F3/1935 , H03F2200/18 , H03F2200/451
摘要： A microwave amplifier circuit includes an amplifier having a gate to which a microwave signal is input and an output terminal from which an amplified signal is output, and a gate bias resistor having a variable resistance connected between the gate of the amplifier and a gate bias terminal for controlling a voltage applied to the gate while maintaining a constant bias voltage at the gate. Even when variations occur in the threshold voltage of the amplifier because of process variations, the gain of the circuit can be held constant, without the bias voltage being adjusted, so that yield is improved.
摘要翻译：微波放大器电路包括具有输入微波信号的栅极的放大器和输出放大信号的输出端子，以及连接在放大器的栅极与栅极偏置端子之间的具有可变电阻的栅极偏置电阻器用于控制施加到栅极的电压，同时在栅极处保持恒定的偏置电压。即使当由于工艺变化而在放大器的阈值电压中出现变化时，电路的增益可以保持恒定，而不会调整偏置电压，从而提高产量。

7. 发明授权

US5363058A Amplifier having linear input-output characteristics and high efficiency 失效
标题翻译：具有线性输入输出特性和高效率的放大器
公开(公告)号：US5363058A
公开(公告)日：1994-11-08
申请号：US29594
申请日：1993-03-11
申请人： Yoshinobu Sasaki
发明人： Yoshinobu Sasaki
IPC分类号： H01L21/8234 , H01L27/06 , H03F1/02 , H03F1/32 , H03F3/195 , H03G3/30
CPC分类号： H03F1/0266 , H03F1/0261 , H03F1/301 , H03F1/306 , H03F1/3205 , H03F1/3223 , H03F2200/18 , H03F2200/192 , H03F2200/222 , H03F2200/228 , H03F2200/255 , H03F2200/387 , H03F2200/423 , H03F2200/48 , H03F2200/75
摘要： An amplifier for amplifying a high frequency signal includes an input impedance matching circuit; an output impedance matching circuit; an FET having a gate and a drain connected to the input impedance matching circuit and the output impedance matching circuit, respectively; and a gate voltage control circuit for controlling the gate voltage of the FET in response to the power of the high frequency signal. The gate voltage control circuit includes a diode having an anode connected to the gate, a capacitor connected between the cathode of the diode and ground, and a gate bias setting circuit connected to the junction of the diode and the capacitor. The gate bias setting circuit outputs a control voltage corresponding to the power of the high frequency signal. As a result, impedance matching by the output matching circuit is not disturbed and the linearity of the output power to the input power is maintained so that the amplifier operates highly efficiently.
摘要翻译：用于放大高频信号的放大器包括输入阻抗匹配电路; 输出阻抗匹配电路; 分别具有连接到输入阻抗匹配电路和输出阻抗匹配电路的栅极和漏极的FET; 以及栅极电压控制电路，用于响应于高频信号的功率来控制FET的栅极电压。栅极电压控制电路包括具有连接到栅极的阳极的二极管，连接在二极管的阴极和地之间的电容器，以及连接到二极管和电容器的结的栅极偏置设置电路。栅极偏置设定电路输出与高频信号的功率对应的控制电压。结果，输出匹配电路的阻抗匹配不受干扰，输出功率与输入功率的线性度保持一致，使得放大器高效地工作。

8. 发明授权

US08704600B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US08704600B2
公开(公告)日：2014-04-22
申请号：US13589307
申请日：2012-08-20
申请人： Yoshinobu Sasaki
发明人： Yoshinobu Sasaki
IPC分类号： H03F3/191
CPC分类号： H03F3/211 , H03F1/0277 , H03F3/191 , H03F3/605 , H03F3/72 , H03F2203/7209
摘要： A power amplifier includes an input terminal into which an input signal is input; a first amplification element amplifying the input signal; a second amplification element amplifying an output signal of the first amplification element; an output terminal from which an output signal of the second amplification element is output; a first matching circuit connected between an output of the second amplification element and the output terminal; a first switch connected between an output of the first amplification element and an input of the second amplification element; a second switch having a first end connected to the output of the first amplification element, and a second end; and a second matching circuit having a first end connected to the second end of the second switch, and a second end directly connected to the output of the second amplification element.
摘要翻译：功率放大器包括：输入端子，输入信号被输入其中; 放大所述输入信号的第一放大元件; 放大第一放大元件的输出信号的第二放大元件; 输出第二放大元件的输出信号的输出端子; 连接在第二放大元件的输出端和输出端子之间的第一匹配电路; 连接在第一放大元件的输出端和第二放大元件的输入端之间的第一开关; 第二开关，具有连接到第一放大元件的输出端的第一端和第二端; 以及第二匹配电路，其具有连接到第二开关的第二端的第一端，以及直接连接到第二放大元件的输出的第二端。

9. 发明授权

US07636017B2 High-frequency power amplifier 失效
标题翻译：高频功率放大器
公开(公告)号：US07636017B2
公开(公告)日：2009-12-22
申请号：US12190611
申请日：2008-08-13
申请人： Yoshinobu Sasaki
发明人： Yoshinobu Sasaki
IPC分类号： H03F3/68
CPC分类号： H03F3/605 , H03F1/32 , H03F3/191 , H03F2200/451
摘要： Amplification transistors respectively amplify an input signal. The output terminals of the amplification transistors are connected in series through respective transmission lines. A harmonic processing circuit is connected to an end of the array of collectors (output terminals) of the amplification transistors. The harmonic processing circuit suppresses harmonics included in output voltages of the amplification transistors. A transmission line and an MIM capacitor form a shorting circuit which establishes a short-circuit for the harmonics between the collector of the amplification transistor nearest to the harmonic processing circuit and the collector of the amplification transistor farthest from the harmonic processing circuit.
摘要翻译：放大晶体管分别放大输入信号。放大晶体管的输出端子通过各自的传输线串联连接。谐波处理电路连接到放大晶体管的集电极（输出端子）阵列的一端。谐波处理电路抑制放大晶体管的输出电压中包含的谐波。传输线和MIM电容器形成一个短路电路，其为最接近谐波处理电路的放大晶体管的集电极与离谐波处理电路最远的放大晶体管的集电极之间的谐波建立短路。

10. 发明授权

US06842880B2 Semiconductor integrated circuit designing method and semiconductor device 有权
标题翻译：半导体集成电路设计方法及半导体器件
公开(公告)号：US06842880B2
公开(公告)日：2005-01-11
申请号：US10098441
申请日：2002-03-18
申请人： Yoshinobu Sasaki
发明人： Yoshinobu Sasaki
IPC分类号： H01L21/822 , G06F17/50 , H01L27/04 , H01L27/06 , H03F1/42 , H03F1/56 , H03F3/60
CPC分类号： H01L27/0629 , G06F17/5063 , H03F1/56 , H03F3/601
摘要： A transistor cell is designed by combining a transistor with passive elements such as a resistor, a capacitor, and an inductor. The parameters of the passive elements are determined so that the transistor cell has a maximum available gain characteristic that is flat in a desired frequency range. Matching circuits for input/output impedance matching for the transistor cell are designed so that loss occurring in the matching circuits has a flat frequency characteristic. A semiconductor integrated circuit is designed by combining the transistor cell and the matching circuits thus designed.
摘要翻译：通过将晶体管与诸如电阻器，电容器和电感器的无源元件组合来设计晶体管单元。确定无源元件的参数，使得晶体管单元具有在期望频率范围内是平坦的最大可用增益特性。用于晶体管单元的输入/输出阻抗匹配的匹配电路被设计成使得在匹配电路中发生的损耗具有平坦的频率特性。通过组合晶体管单元和这样设计的匹配电路来设计半导体集成电路。

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