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1. 发明公开

US20230216454A1 CURRENT CONTROL CIRCUIT, BIAS SUPPLY CIRCUIT, AND AMPLIFIER DEVICE 审中-公开
公开(公告)号：US20230216454A1
公开(公告)日：2023-07-06
申请号：US18182661
申请日：2023-03-13
申请人： Murata Manufacturing Co., Ltd.
发明人： Kazuhiko ISHIMOTO
IPC分类号： H03F3/193 , H03F3/21 , H03F1/02
CPC分类号： H03F3/1935 , H03F3/21 , H03F1/0216 , H03F2200/451
摘要： A current control circuit controls a bias current that is supplied to an amplifier transistor that amplifies a radio-frequency signal and includes a node, a constant current source circuit that supplies a first current to the node, and a variable current source circuit that supplies a second current to the node, based on a result of comparison between a potential of the node and a reference potential. The node outputs a control current including the first current and the second current for controlling the bias current.

2. 发明授权

US09853601B2 Method, apparatus and system for envelope tracking 有权
公开(公告)号：US09853601B2
公开(公告)日：2017-12-26
申请号：US14908021
申请日：2013-07-26
申请人： NOKIA SOLUTIONS AND NETWORKS OY
发明人： Sandro Lanfranco , Xiaokun Yang , Zhancang Wang
IPC分类号： H03F1/02 , H03F1/32 , H03F3/193 , H03F3/24 , H03F3/19 , H03F3/21
CPC分类号： H03F1/0233 , H03F1/0266 , H03F1/0272 , H03F1/3205 , H03F3/19 , H03F3/1935 , H03F3/21 , H03F3/245 , H03F2200/102 , H03F2200/15 , H03F2200/451
摘要： This disclosure relates generally to the field of wireless communication infrastructure, and more particularly to a method, apparatus and system for envelope tracking. The system for envelope tracking comprising: a transistor; an RF transistor; a driver; a switcher current source; and a subtracting network; wherein the system is configured such that when an envelope voltage is less than a predetermined voltage value, the RF transistor is configured for decreasing an amount of absorbed biasing current, and when the envelope voltage is greater than a predetermined voltage value, the RF transistor is configured for increasing an amount of absorbed biasing current. The goal of RF transistor sinking is to absorb the redundant biasing current generated by the envelope tracking supply modulator to eliminate distortions.

3. 发明授权

US09553551B1 Wide-band amplifiers using clipper circuits for reduced harmonics 有权
标题翻译：宽带放大器采用限幅电路，减少谐波
公开(公告)号：US09553551B1
公开(公告)日：2017-01-24
申请号：US14276400
申请日：2014-05-13
申请人： ANADIGICS, INC.
发明人： Robert Bayruns , Tim Gittemeier
IPC分类号： H03F3/04 , H03F3/19 , H03F3/21
CPC分类号： H03F3/193 , H03F1/3205 , H03F1/483 , H03F3/1935 , H03F3/21 , H03F2200/102 , H03F2200/351 , H03F2200/36 , H03F2200/429 , H03F2200/451
摘要： The present invention breaks up the frequency bands which can be filtered by a simple low-loss band-pass or low pass filter. The second harmonic frequency is reduced by use of a non-linear clipper element which controls the driving waveform symmetry and can reduce the harmonics by as much as 5-15 db which makes the filter much simpler and allows the amplifier to remain wide-band. The output waveform from the amplifier is symmetrical or nearly symmetrical.
摘要翻译：本发明可以分解通过简单的低损耗带通或低通滤波器滤波的频带。通过使用控制驱动波形对称性的非线性限幅元件来减少二次谐波频率，并且可以将谐波减少多达5-15db，这使得滤波器更简单并且允许放大器保持宽带。来自放大器的输出波形是对称的或近似对称的。

4. 发明申请

US20160111417A1 ELECTRONIC CIRCUITS INCLUDING A MOSFET AND A DUAL-GATE JFET 有权
标题翻译：包括MOSFET和双栅极JFET的电子电路
公开(公告)号：US20160111417A1
公开(公告)日：2016-04-21
申请号：US14979337
申请日：2015-12-22
申请人： ACCO
发明人： Denis A. Masliah
IPC分类号： H01L27/06 , H01L29/808 , H01L29/423 , H01L29/78
CPC分类号： H01L27/0617 , H01L27/095 , H01L27/098 , H01L29/42316 , H01L29/66484 , H01L29/78 , H01L29/7832 , H01L29/808 , H03F1/0266 , H03F1/223 , H03F1/56 , H03F3/1935 , H03F3/195 , H03F3/245 , H03F2200/18 , H03F2200/222 , H03F2200/387
摘要： Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
摘要翻译：提供电子电路和方法用于各种应用，包括信号放大。示例性电子电路包括MOSFET和共栅二极管配置的双栅极JFET。双栅极JFET包括设置在通道上方和下方的顶部和底部门。 JFET的顶栅由信号控制，该信号取决于控制MOSFET栅极的信号。 JFET的底栅的控制可以取决于或不依赖于顶栅的控制。 MOSFET和JFET可以在不同尺寸（如栅极宽度）的同一衬底上实现为单独的组件。

5. 发明申请

US20160049908A1 RADIO-FREQUENCY AMPLIFIER CIRCUIT AND CONTROL VOLTAGE SETTING METHOD FOR RADIO-FREQUENCY AMPLIFIER CIRCUIT 有权
标题翻译：无线电频率放大器电路的无功放大器电路和控制电压设置方法
公开(公告)号：US20160049908A1
公开(公告)日：2016-02-18
申请号：US14926367
申请日：2015-10-29
申请人： Murata Manufacturing Co., Ltd.
发明人： Ken Wakaki
IPC分类号： H03F1/02 , H03F3/193 , H03F1/32
CPC分类号： H03F1/0205 , H03F1/0266 , H03F1/0272 , H03F1/223 , H03F1/226 , H03F1/3205 , H03F1/56 , H03F3/193 , H03F3/1935 , H03F3/195 , H03F3/245 , H03F2200/108 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/451 , H03F2200/516
摘要： A radio-frequency amplifier circuit includes first and second FETs cascode-connected to each other. The gate of the first FET is connected to a radio-frequency input terminal, and the drain of the second FET is connected to a radio-frequency output terminal. The source of the first FET is connected to a ground, and the drain of the first FET and the source of the second FET are connected to each other. A drive voltage is applied to the drain of the second FET. A bias setting unit is connected to the gate of the second FET. The bias setting unit sets a second control voltage to be applied to the second FET so that a node voltage between the drain of the first FET and the source of the second FET will be substantially half of the drive voltage.
摘要翻译：射频放大器电路包括彼此串联连接的第一和第二FET。第一FET的栅极连接到射频输入端子，第二FET的漏极连接到射频输出端子。第一FET的源极连接到地，第一FET的漏极和第二FET的源极彼此连接。驱动电压施加到第二FET的漏极。偏置设置单元连接到第二FET的栅极。偏置设置单元设置要施加到第二FET的第二控制电压，使得第一FET的漏极和第二FET的源极之间的节点电压将大致为驱动电压的一半。

6. 发明申请

US20140097900A1 CIRCUIT AND METHOD FOR BIASING A GALLIUM ARSENIDE (GaAs) POWER AMPLIFIER 有权
标题翻译：用于偏置砷化镓（GaAs）功率放大器的电路和方法
公开(公告)号：US20140097900A1
公开(公告)日：2014-04-10
申请号：US14040523
申请日：2013-09-27
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Ziv Alon , Shiaw Wen Chang , Andre Metzger
IPC分类号： H03F3/193
CPC分类号： H03F3/1935 , H03F1/0261 , H03F1/30 , H03F1/302 , H03F3/195 , H03F2200/18 , H03F2200/447 , H03F2200/451
摘要： A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.
摘要翻译：用于偏置砷化镓（GaAs）功率放大器的电路包括在砷化镓（GaAs）材料系统中实现的参考电压发生器电路，在砷化镓材料系统中实现的场效应晶体管（FET）偏置电路，输出参考电压发生器电路并且适于向射频（RF）放大器级提供输出。

7. 发明授权

US08648665B2 Impedance-matching circuits for multi-output power supplies driving CO2 gas-discharge lasers 有权
标题翻译：用于驱动CO2气体放电激光器的多输出电源的阻抗匹配电路
公开(公告)号：US08648665B2
公开(公告)日：2014-02-11
申请号：US13029953
申请日：2011-02-17
申请人： Frederick W. Hauer , Joel Fontanella , Patrick T. Tracy
发明人： Frederick W. Hauer , Joel Fontanella , Patrick T. Tracy
IPC分类号： H03H7/38
CPC分类号： H03H7/383 , H01S3/09702 , H01S3/2232 , H03F1/56 , H03F3/1935 , H03F3/3022 , H03F3/601 , H03F2200/09 , H03F2200/387 , H03F2200/423 , H03F2200/462 , H03F2200/471 , H03H7/42 , H03H7/48
摘要： Electrical apparatus for connecting a radio frequency power-supply having two outputs to a load includes two radio frequency transmission-lines, each one connected to a corresponding power-supply output. A transformer arrangement connects the two transmission-lines to the load. Each transmission-line includes a series-connected pair of twelfth-wave transmission-line sections. The series-connection between the twelfth wave transmission-line sections in one transmission line is connected to the series-connection between the twelfth-wave transmission-line sections in the other by a device having an adjustable impedance.
摘要翻译：用于将具有两个输出的射频电源连接到负载的电气设备包括两个射频传输线，每个射频电源连接到相应的电源输出。变压器装置将两条传输线连接到负载。每个传输线包括串联连接的第十二波传输线段。一个传输线中的第十二波传输线段之间的串联连接通过具有可调节阻抗的装置连接到第十二波传输线部分之间的串联连接。

8. 发明申请

US20130248945A1 Electronic Circuits including a MOSFET and a Dual-Gate JFET 有权
公开(公告)号：US20130248945A1
公开(公告)日：2013-09-26
申请号：US13803792
申请日：2013-03-14
申请人： ACCO Semiconductor, Inc.
发明人： Alexandre G. Bracale , Denis A. Masliah
IPC分类号： H01L27/088 , H01L21/82
CPC分类号： H01L27/088 , H01L21/82 , H01L27/0617 , H01L27/095 , H01L27/098 , H03F1/0266 , H03F1/223 , H03F1/56 , H03F3/1935 , H03F3/195 , H03F3/245 , H03F2200/18 , H03F2200/222 , H03F2200/387
摘要： Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.

9. 发明授权

US08098097B2 Radio frequency buffer 有权
标题翻译：射频缓冲器
公开(公告)号：US08098097B2
公开(公告)日：2012-01-17
申请号：US12646329
申请日：2009-12-23
申请人： Said Abdelli , Jeffrey Kriz
发明人： Said Abdelli , Jeffrey Kriz
IPC分类号： H03F3/45
CPC分类号： H03F3/45237 , H03F3/1935 , H03F2200/451
摘要： Systems, methods, and devices for receiving a differential input signal and generating a non-differential output signal are described herein. For example, an RF buffer is described that includes first and second transistor elements. The first transistor element receives a first polarity signal of a differential signal and drives a non-differential output of the RF buffer. A second transistor element receives a second polarity signal of the differential signal and drives the non-differential output of the RF buffer. The first and second transistor elements substantially simultaneously drive the non-differential output of the RF buffer.
摘要翻译：这里描述了用于接收差分输入信号并产生非差分输出信号的系统，方法和设备。例如，描述了包括第一和第二晶体管元件的RF缓冲器。第一晶体管元件接收差分信号的第一极性信号并驱动RF缓冲器的非差分输出。第二晶体管元件接收差分信号的第二极性信号并驱动RF缓冲器的非差分输出。第一和第二晶体管元件基本上同时驱动RF缓冲器的非差分输出。

10. 发明申请

US20110074512A1 CIRCUIT AND METHOD FOR BIASING A GALLIUM ARSENIDE (GaAs) POWER AMPLIFIER 有权
标题翻译：用于偏置砷化镓（GaAs）功率放大器的电路和方法
公开(公告)号：US20110074512A1
公开(公告)日：2011-03-31
申请号：US12958453
申请日：2010-12-02
申请人： Ziv Alon , Shiaw W. Chang , Andre Metzger
发明人： Ziv Alon , Shiaw W. Chang , Andre Metzger
IPC分类号： H03F3/04
CPC分类号： H03F3/1935 , H03F1/0261 , H03F1/30 , H03F1/302 , H03F3/195 , H03F2200/18 , H03F2200/447 , H03F2200/451
摘要： A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.
摘要翻译：用于偏置砷化镓（GaAs）功率放大器的电路包括在砷化镓（GaAs）材料系统中实现的参考电压发生器电路，在砷化镓材料系统中实现的场效应晶体管（FET）偏置电路，输出参考电压发生器电路并且适于向射频（RF）放大器级提供输出。

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